Abstract: Clupak paper is manufactured using a gap-former paper-making machine equipped with a Clupak system, in such a way that its longitudinal tensile energy absorption index and lateral tensile energy absorption index as specified in JIS P8113 become 2.5 J/g or more and 1.0 J/g or more, respectively. The paper has excellent strength characteristics in both the longitudinal and lateral directions, especially in the longitudinal direction so that when the Clupak paper can be processed into a sack, the sack rarely breaks.

Abstract: In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode.

Abstract: A network authentication system includes a client terminal, an authentication server authenticating connection of the client terminal with an external network, and a plurality of authentication switches controlling communication of the client terminal with the external network. The authentication switch includes an authentication server processing unit notifying the authentication server of authentication terminal information, and a receiving port filter receives a specific packet. The authentication server, includes a terminal management storing unit storing the authentication terminal information, and an authentication switch management processing unit which, in order that the authentication switch authenticate the client terminal, determines filter information, that is set in the receiving port filter, based on the authentication terminal information, and notifies the authentication switch of the filter information.

Abstract: A silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device, a high-concentration well region is formed in a well region, and a distance from a first sidewall surface of a trench of the silicon carbide semiconductor to the high-concentration well region is smaller than a distance from a second sidewall surface of the trench to the high-concentration well region, the second sidewall surface facing the first sidewall surface of the trench through the gate electrode.

Abstract: A silicon carbide semiconductor device capable of decreasing an ON-state resistance and improving a breakdown voltage. The silicon carbide semiconductor device includes: a drift layer of a first conductivity type made of a silicon carbide semiconductor; a depletion suppression layer of the first conductivity type formed on the drift layer and having a first conductivity type impurity concentration higher than that of the drift layer; a body region of a second conductivity type formed on the depletion suppression layer; a trench extending through the body region and the depletion suppression layer to reach the drift layer; and a gate insulation film formed along bottom and side surfaces of the trench. The depletion suppression layer has a thickness equal to or greater than 0.06 ?m and equal to or less than 0.31 ?m.

Abstract: Provided is a press forming apparatus for a semi-solid metal material, including: a slide caused to make a reciprocating linear motion; a sub-slide mounted so as to be movable relatively to the slide; a fluid pressure mechanism interposed between the slide and the sub-slide, which is capable of moving the sub-slide relatively to the slide by fluid pressure; an upper die mounted to the sub-slide; and a lower die. The press forming apparatus is configured to press-form the material while applying predetermined pressure to the material for a predetermined period by bringing, along with descent action of the slide, the upper die into contact with the material fed into the lower die, then stopping the slide at a predetermined position, and moving the upper die mounted to the sub-slide relatively to the slide by the fluid pressure mechanism under a state in which the slide is stopped.

Abstract: It is an object of the present invention to provide a silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device formed on the silicon carbide semiconductor substrate having the off-angle, a low-channel doped region is provided on a first sidewall surface side of the trench in a well region, and a high-channel doped region having an effective acceptor concentration lower than that of the low-channel doped region is provided on a second sidewall surface side of the trench in the well region.

Abstract: A display apparatus includes a screen, a setting unit and a processor. The setting unit is for setting a product and is provided at the screen. The processor controls display on the screen on a basis of the product which is set at the setting unit.

Abstract: A silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device, a high-concentration well region is formed in a well region, and a distance from a first sidewall surface of a trench of the silicon carbide semiconductor to the high-concentration well region is smaller than a distance from a second sidewall surface of the trench to the high-concentration well region, the second sidewall surface facing the first sidewall surface of the trench through the gate electrode.

Abstract: A sound collecting control apparatus includes: a vehicle stop detector; a noise source direction specifier to specify a direction from the sound collector to a noise source of the vehicle stopped at the predetermined position; a search beam former that forms a plurality of search beams in the direction of the noise source specified by the noise source direction specifier and around the direction of the noise source so as to search for a sound source of a voice of a speaker in the vehicle; a search beam selector that selects a search beam corresponding to the sound source of the voice of the speaker in the vehicle from the plurality of search beams formed by the search beam former; and a directivity former that forms directivity of the sound collected by the sound collector in the direction corresponding to the search beam selected by the search beam selector.

Abstract: A die casting machine has a clamping device and an injection device. The clamping device has a fixed die plate which holds a fixed die, a movable die plate which holds a moving die, an electrically operated die opening and closing-use driving device which moves the movable die plate in a die opening and closing direction, and a clamping cylinder which generates a clamping force. The injection device has a sleeve, a plunger which capable of sliding in the sleeve, an electrically operated injection-use driving device which drives the plunger at least at the time of low speed injection, and an injection cylinder which drives the plunger at least at the time of high speed injection.

Abstract: A manufacturing method that enables stably making a high-quality optical fiber is provided. The manufacturing method of the present invention comprises: a softened portion falling step in which an optical fiber preform is heated in a heating furnace and a dropping part of softened portion of the preform thus heat-softened is allowed to drop; and a drawing step for drawing the preform such that the softened glass is drawn into a fiber by applying a tension with a take-up means after the softened portion falling step, whereas the preform is rotated about its axis at the softened portion falling step.

Abstract: An injection device has an injection cylinder device which is connected to a plunger and a driving device which is capable of driving a plunger to move forward through the injection cylinder device. A cylinder part of the injection cylinder device has a front cylinder member which accommodates an injection piston so that it can slide in a front-back direction, is opened at the rear end, and is movable in the front-back direction. Further, the cylinder part has a back cylinder member which communicates with the rear end of the front cylinder member and is provided in a fixed manner. The driving device can drive the front cylinder member in the front-back direction.

Abstract: An insulated gate silicon carbide semiconductor device includes: a drift layer of a first conductivity type on a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0° as a main surface; a first base region; a source region; a trench; a gate insulating film; a protective diffusion layer; and a second base region. The trench sidewall surface in contact with the second base region is a surface having a trench off-angle of more than 0° in a <0001> direction with respect to a plane parallel to the <0001> direction. The insulated gate silicon carbide semiconductor device can relieve an electric field of a gate insulating film and suppress an increase in on-resistance and provide a method for manufacturing the same.

Abstract: Provided is a press forming method for a semi-solid material, including: a semi-solid material carrying step of carrying a semi-solid material into a lower die; a first press forming step of regulating, under a Z-direction regulation state in which a change in the Z direction's dimension corresponding to a pressing direction is regulated by an upper die, a change in one of the dimensions in X and Y directions by compressing the material with a transverse punch so that the one becomes equal to a dimension of the product, and then stopping the punch at a position of the compression; and a second press forming step of moving, under a state in which the change in the one is regulated in the above step, the upper die in the pressing direction to compress the material so that the Z direction's dimension becomes equal to the product's dimension.

Abstract: A die cast machine which has a mold opening and closing device having a die plate driving device which drives a movable die plate holding a moving mold, a spray device having a head driving device which advances and retracts a spray head to and from a space between a fixed mold and a moving mold, and a control device which controls the spray device and a mold opening and closing device so as to make the movable die plate move in a mold opening-closing direction during a spray process of ejecting a mold releasing agent from the spray head or during an air blowing process of ejecting air from the spray head.

Abstract: It is an object of the present invention to provide a silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device formed on the silicon carbide semiconductor substrate having the off-angle, a low-channel doped region is provided on a first sidewall surface side of the trench in a well region, and a high-channel doped region having an effective acceptor concentration lower than that of the low-channel doped region is provided on a second sidewall surface side of the trench in the well region.

Abstract: A manufacturing method that enables stably making a high-quality optical fiber is provided. The manufacturing method of the present invention comprises: a softened portion falling step in which an optical fiber preform is heated in a heating furnace and a dropping part of softened portion of the preform thus heat-softened is allowed to drop; and a drawing step for drawing the preform such that the softened glass is drawn into a fiber by applying a tension with a take-up means after the softened portion falling step, whereas the preform is rotated about its axis at the softened portion falling step.

Abstract: Provided is a press forming method for a semi-solid metal material, including: manufacturing a semi-solid metal material in a container having an upward opening by injecting molten metal into the container, and cooling the molten metal while stirring the molten metal; inverting the container and storing the semi-solid metal material in a temporary storage space; discharging a liquid phase part from the semi-solid metal material through the inverting; and pressing the semi-solid metal material by feeding the semi-solid metal material, from which the liquid phase part is discharged, into dies of a pressing machine.

Abstract: A method for the cathodic electrocoating of a tin-coated steel sheet in a treatment solution that does not contain any Cr compound, F or nitrite nitrogen. A tin oxide layer that is not subjected to a cathodic electrocoating treatment yet and is arranged on a tin-coated steel sheet is thinned to a specified thickness or less by a cathodic electrocoating treatment in an aqueous solution containing sodium carbonate or sodium hydrogen carbonate or an aqueous sulfuric acid solution immersion treatment, and the tin oxide layer is subjected to a cathodic electrocoating treatment in an aqueous solution of an alkaline metal sulfate containing a zirconium compound having a specified composition. In this manner, a coating film is formed on the tin oxide layer at a specific adhered amount in terms of Zr content.