Abstract: A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the source contact region. These three regions are connected in series between the source pad and the channel region in the well region.

Abstract: In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode.

Abstract: A concomitant agent to be used simultaneously or separately, comprising a combination of (a) 3-{(2S,4S)-4-[4-(3-methyl-1-phenyl-1H-pyrazol-5-yl)piperazin-1-yl]pyrrolidin-2-ylcarbonyl}thiazolidine, a salt of the compound with an organic or inorganic and mono- or di-basic acid or a solvate thereof, and (b) at least one kind of active ingredient selected from the group consisting of an active ingredient of a pharmaceutical agent selected from (i) an antidiabetic drug, (ii) a lipid lowering drug, (iii) an antihypertensive drug, (iv) a therapeutic drug for diabetic complications, (v) an antiobesity drug, (vi) an antiplatelet drug and (vii) an anticoagulant, a pharmaceutically acceptable salt thereof and a solvate thereof.

Abstract: A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.

Abstract: A manufacturing method that enables stably making a high-quality optical fiber is provided. The manufacturing method of the present invention comprises: a softened portion falling step in which an optical fiber preform is heated in a heating furnace and a dropping part of softened portion of the preform thus heat-softened is allowed to drop; and a drawing step for drawing the preform such that the softened glass is drawn into a fiber by applying a tension with a take-up means after the softened portion falling step, whereas the preform is rotated about its axis at the softened portion falling step.

Abstract: A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.

Abstract: An optical fiber producing method and apparatus for producing an optical fiber in which, in a path where an optical fiber is reeled out from a supply bobbin, taken up by take-up means, and wound by a winding bobbin, twists are alternately imparted to the optical fiber by a twist imparting portion. A zone where a high tension load is allowed to be applied to the optical fiber without affecting winding tension of the winding bobbin is disposed, a twist is imparted in the zone, and, when tension immediately before the twist imparting portion is indicated by T (g), a free path length is indicated by L, a twisting amount is indicated by R (turns/m), and a and b are constants, the tension and free path length by which the twisting amount R approximated by “R=a×T×Lb” is made “2” or more are set.

Abstract: A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

Abstract: Disclosed is a method for the cathodic electrocoating of a tin-coated steel sheet in a treatment solution that does not contain any Cr compound, F or nitrite nitrogen. In the method, a tin oxide layer that is not subjected to a cathodic electrocoating treatment yet and is arranged on a tin-coated steel sheet is thinned to a specified thickness or less by a cathodic electrocoating treatment in an aqueous solution containing sodium carbonate or sodium hydrogen carbonate or a aqueous sulfuric acid solution immersion treatment, and the tin oxide layer is subjected to a cathodic electrocoating treatment in an aqueous solution of an alkaline metal sulfate containing a zirconium compound having a specified composition. In this manner, a coating film is formed on the tin oxide layer at a specific adhered amount in terms of Zr content.

Abstract: Simple and small-sized equipment which continuously afford alternate twists to an optical fiber and a method using the apparatus are provided. The equipment includes: a guide roller for causing the fiber to roll; a roller supporting member for holding the roller in a manner allowing the roller to freely turn about an axial center X; and a driving unit to cause the roller to oscillate by making the supporting member to turn about an axial center Y that is inclined relative to the axial center X. The method includes: arranging a guide roller to intersect the fiber, the roller being held by a roller supporting member to freely turn about an axial center X; oscillating the roller by driving the supporting member to revolve about the axial center Y which is inclined relative to the axis center X; and causing the fiber to roll to afford alternate twists to the fiber.

Abstract: A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.

Abstract: The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0<x<1) formed on a substrate, an AlyGa1-yN barrier layer with a composition of Al being y (0<y?1) formed on the channel layer, and source/drain electrodes and a gate electrode formed on the barrier layer, wherein the composition ratio y is larger than the composition ratio x.

Abstract: The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0<x<1) formed on a substrate, an AlyGa1-yN barrier layer with a composition of Al being y (0<y?1) formed on the channel layer, and source/drain electrodes and a gate electrode formed on the barrier layer, wherein the composition ratio y is larger than the composition ratio x.

Abstract: An optical fiber producing method and apparatus are provided in which sufficient pulling tension is applied to an optical fiber to enhance the twisting efficiency without affecting winding tension of a winding bobbin, whereby the PMD of the optical fiber can be reduced.

Abstract: A tunable asymmetric interleaver constructed from two symmetric interleavers in series, wherein either or both of the individual symmetric interleavers exhibit a wavelength shifting ability. Advantageously, tunable asymmetric interleavers so constructed provide continuous tunable interleaving ratios from 0:100 to 50:50 to 100:0 and provide attractive upgrade paths for existing and future DWDM networks and applications.

Abstract: An object of the present invention is to provide a process for preparing a high-quality coated paper with high runnability while preventing damage to the elastic roll surface of the soft calender encountered during high-speed operation. The present invention provides a process for preparing a coated paper, comprising the steps of: making a base paper; applying a coating solution containing a pigment and an adhesive on the base paper to form one or more pigment coating layers; and surface-treating the pigment coating layers by a soft calender, said papermaking and coating steps being performed at an operating speed of 1300 m/min; wherein said surface-treating step comprises treating the outermost one of the pigment coating layers using a soft calender comprising a metallic roll and an elastic roll with at least two or more nips and wherein the elastic roll has a Shore D hardness of 90-96 and the metallic roll surface temperature at the first nip is less than 130° C.

Abstract: The present invention provides a pharmaceutical agent for the treatment and/or prophylaxis of abnormal blood glucose and lipid metabolism associated with eating, for which a sufficient treatment method or a therapeutic drug has not been found.

Abstract: A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.

Abstract: A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.