Abstract: A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.

Abstract: Simple and small-sized equipment which continuously afford alternate twists to an optical fiber and a method using the apparatus are provided. The equipment includes: a guide roller for causing the fiber to roll; a roller supporting member for holding the roller in a manner allowing the roller to freely turn about an axial center X; and a driving unit to cause the roller to oscillate by making the supporting member to turn about an axial center Y that is inclined relative to the axial center X. The method includes: arranging a guide roller to intersect the fiber, the roller being held by a roller supporting member to freely turn about an axial center X; oscillating the roller by driving the supporting member to revolve about the axial center Y which is inclined relative to the axis center X; and causing the fiber to roll to afford alternate twists to the fiber.

Abstract: Methods for producing cast-coated papers showing a reduced level of curling and reduced curling or wavy deformation caused by moisture absorption or other reasons as well as showing a high surface quality in the cast-coated surface. The steps for producing cast-coated papers include applying a coating color based on a pigment and an adhesive on one side of a base paper, and pressing/drying the coated layer in the wet state against a casting drum mirror surface, where moisture is added to the coated paper by passing it through conditioned air at a high temperature and a high humidity (for 20 seconds or more) after pressing/drying the coated layer against a casting drum.

Abstract: A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.

Abstract: An optical triplexer transceiver that utilizes parallel signal detection for use in broadband passive optical networks (B-PONs). The triplexer transceiver includes an optical filter comprising a first port coupled to a laser for receiving upstream optical data signals, a second port for passing the upstream optical data signals to a network, and for receiving combined downstream optical data and video signals from the network, the video signals modulated by subcarrier modulation (SCM), and a third port for communicating the combined downstream optical data and video signals to a photodetector constructed and arranged for simultaneously receiving the combined downstream optical data and video signals and converting the optical data and video signals to electrical signals. A plurality of filters are coupled to the photodetector for separating the combined downstream data and video signals, including a low-pass filter for passing the downstream data signals, and a band-pass filter for passing the video signals.

Abstract: A display device of the present invention includes a display unit and a display control unit. The display unit is configured to be installed in an electronic apparatus. The display unit is configured to display electrically an image. The display unit is configured to maintain display of the image even if a voltage application is stopped. The display control unit is configured to control the display unit to display an image as an emblem.

Abstract: The present invention provides a pharmaceutical agent for the treatment and/or prophylaxis of abnormal blood glucose and lipid metabolism associated with eating, for which a sufficient treatment method or a therapeutic drug has not been found.

Abstract: A concomitant agent to be used simultaneously or separately, comprising a combination of (a) 3-{(2S,4S)-4-[4-(3-methyl-1-phenyl-1H-pyrazol-5-yl)piperazin-1-yl]pyrrolidin-2-ylcarbonyl}thiazolidine, a salt of the compound with an organic or inorganic and mono- or di-basic acid or a solvate thereof, and (b) at least one kind of active ingredient selected from the group consisting of an active ingredient of a pharmaceutical agent selected from (i) an antidiabetic drug, (ii) a lipid lowering drug, (iii) an antihypertensive drug, (iv) a therapeutic drug for diabetic complications, (v) an antiobesity drug, (vi) an antiplatelet drug and (vii) an anticoagulant, a pharmaceutically acceptable salt thereof and a solvate thereof.

Abstract: The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0<x<1) formed on a substrate, an AlyGa1-yN barrier layer with a composition of Al being y (0<y?1) formed on the channel layer, and source/drain electrodes and a gate electrode formed on the barrier layer, wherein the composition ratio y is larger than the composition ratio x.

Abstract: A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.

Abstract: Disclosed is a method for electric clamping, which performs a clamping process in parallel with a core-drawing-in process, avoiding damages of molds and core mechanisms and enabling secure clamping.

Abstract: A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.

Abstract: An optical triplexer transceiver that utilizes parallel signal detection for use in broadband passive optical networks (B-PONs). The triplexer transceiver includes an optical filter comprising a first port coupled to a laser for receiving upstream optical data signals, a second port for passing the upstream optical data signals to a network, and for receiving combined downstream optical data and video signals from the network, the video signals modulated by subcarrier modulation (SCM), and a third port for communicating the combined downstream optical data and video signals to a photodetector constructed and arranged for simultaneously receiving the combined downstream optical data and video signals and converting the optical data and video signals to electrical signals. A plurality of filters are coupled to the photodetector for separating the combined downstream data and video signals, including a low-pass filter for passing the downstream data signals, and a band-pass filter for passing the video signals.

Abstract: A tunable asymmetric interleaver constructed from two symmetric interleavers in series, wherein either or both of the individual symmetric interleavers exhibit a wavelength shifting ability. Advantageously, tunable asymmetric interleavers so constructed provide continuous tunable interleaving ratios from 0:100 to 50:50 to 100:0 and provide attractive upgrade paths for existing and future DWDM networks and applications.

Abstract: Processes for producing cast-coated papers showing a reduced level of curling after the preparation of the cast-coated papers and reduced curling or wavy deformation caused by moisture absorption or other reasons as well as showing a high surface quality in the cast-coated surface are provided. Thus, processes for producing cast-coated papers comprising the steps of applying a coating color based on a pigment and an adhesive on one side of a base paper, and pressing/drying the coated layer in the wet state against a casting drum mirror surface, wherein moisture is added to the coated paper by passing it through air at a high temperature and a high humidity (for 20 seconds or more) after pressing/drying the coated layer against a casting drum, as well as apparatuses therefor are provided.

Abstract: Disclosed is a method for electric clamping, which performs a clamping process in parallel with a core-drawing-in process, avoiding damages of molds and core mechanisms and enabling secure clamping.

Abstract: A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.