Abstract: An electrolyte composition, quasi-solid-state electrolyte, and lithium-ion battery employing the same are provided. The electrolyte composition includes a component (A), component (B) and component (C). The component (A) is a combination of a first polymer (A1) and a second polymer (A2), or a third polymer (A3). The first polymer (A1) has a repeating unit of Formula (I), the second polymer (A2) has a repeating unit of Formula (II), and the third polymer (A3) has a repeating unit of Formula (I) and a repeating unit of Formula (II) , wherein R1, R2, R3, R4, R5, Z1, and Z3 are as defined in the specification. The component (B) is a lithium salt and the component (C) is a solvent.

Abstract: A semiconductor device includes a substrate and an interconnect layer disposed on the substrate. The interconnect layer includes a dielectric layer and an interconnect extending through the dielectric layer. The interconnect includes a bulk metal region and a single barrier/liner layer, which serves as both a barrier layer and a liner layer and which is disposed to separate the bulk metal region from the dielectric layer.

Abstract: A semiconductor isolation structure includes a silicon-on-insulator wafer, a first deep trench isolation structure and a second deep trench isolation structure. The silicon-on-insulator wafer includes a semiconductor substrate, a buried insulation layer disposed on the semiconductor substrate, and a semiconductor layer disposed on the buried insulation layer. The semiconductor layer has a functional region. The first deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional region. The second deep trench isolation structure penetrates semiconductor layer and the buried insulation layer, and surrounds the first deep trench isolation structure.

Abstract: A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes an interconnect structure which includes a topological material. The topological material includes a topological insulator, a topological semimetal, or a combination thereof. A method for manufacturing the semiconductor device is also disclosed.

Abstract: Various embodiments of the present application are directed towards a method to integrate NVM devices with a logic or BCD device. In some embodiments, an isolation structure is formed in a semiconductor substrate. The isolation structure demarcates a memory region of the semiconductor substrate, and further demarcates a peripheral region of the semiconductor substrate. The peripheral region may, for example, correspond to BCD device or a logic device. A doped well is formed in the peripheral region. A dielectric seal layer is formed covering the memory and peripheral regions, and further covering the doped well. The dielectric seal layer is removed from the memory region, but not the peripheral region. A memory cell structure is formed on the memory region using a thermal oxidation process. The dielectric seal layer is removed from the peripheral region, and a peripheral device structure including a gate electrode is formed on the peripheral region.

Abstract: An assembly-disassembly tool is adapted for assembling and disassembling a lamp board. The assembly-disassembly tool includes a magnetic conductive member and a sliding module. The magnetic conductive member includes a through hole. When the disassembly tool is positioned on the lamp board, the through hole of the magnetic conductive member is aligned with an iron sheet of the light board. The sliding module including a magnet is slidably disposed above the magnetic conductive member along a direction parallel to a top surface of the magnetic conductive member. When the sliding module is located at a first position relative to the magnetic conductive member, the magnet is staggered with the through hole. When the sliding module slides to a second position relative to the magnetic conductive member, the magnet is aligned with the through hole and is configured to magnetically attract the iron sheet of the lamp board.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a source region and a drain region arranged over and/or within a substrate. Further, a shallow trench isolation (STI) structure is arranged within the substrate and between the source and drain regions. A gate electrode is arranged over the substrate, over the STI structure, and between the source and drain regions. A portion of the gate electrode extends into the STI structure such that a bottommost surface of the portion of the gate electrode is arranged between a topmost surface of the STI structure and a bottommost surface of the STI structure.

Abstract: An integrated circuit structure includes a semiconductor substrate, a first source/drain feature, a second source/drain feature, a gate dielectric layer, a gate electrode, a field plate electrode, and a dielectric layer. The semiconductor substrate has a well region and a drift region therein. The first source/drain feature is in the well region. The second source/drain feature is in the semiconductor substrate. The drift region is between the well region and the second source/drain feature. The gate dielectric layer is over the well region and the drift region. The gate electrode is over the gate dielectric layer and vertically overlapping the well region. The field plate electrode is over the gate dielectric layer and vertically overlapping the drift region. The dielectric layer is between the gate electrode and the field plate electrode. A top surface of the gate electrode is free of the dielectric layer.

Abstract: Various embodiments of the present application are directed towards a method to integrate NVM devices with a logic or BCD device. In some embodiments, an isolation structure is formed in a semiconductor substrate. The isolation structure demarcates a memory region of the semiconductor substrate, and further demarcates a peripheral region of the semiconductor substrate. The peripheral region may, for example, correspond to BCD device or a logic device. A doped well is formed in the peripheral region. A dielectric seal layer is formed covering the memory and peripheral regions, and further covering the doped well. The dielectric seal layer is removed from the memory region, but not the peripheral region. A memory cell structure is formed on the memory region using a thermal oxidation process. The dielectric seal layer is removed from the peripheral region, and a peripheral device structure including a gate electrode is formed on the peripheral region.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a source region and a drain region arranged over and/or within a substrate. Further, a shallow trench isolation (STI) structure is arranged within the substrate and between the source and drain regions. A gate electrode is arranged over the substrate, over the STI structure, and between the source and drain regions. A portion of the gate electrode extends into the STI structure such that a bottommost surface of the portion of the gate electrode is arranged between a topmost surface of the STI structure and a bottommost surface of the STI structure.

Abstract: A method for forming an integrated circuit structure is provided. The method includes forming a gate dielectric layer over a semiconductor substrate; depositing a first gate electrode layer over the gate dielectric layer; etching the first gate electrode layer to form a gate electrode over the gate dielectric layer; forming a drift region in the semiconductor substrate; depositing a dielectric layer over the gate dielectric layer and the gate electrode, in which the dielectric layer has a first portion alongside a first sidewall of the gate electrode; depositing a second gate electrode layer over the dielectric layer; etching the second gate electrode layer to form a field plate electrode alongside the first portion of the dielectric layer; and forming source/drain features in the semiconductor substrate.

Abstract: A method of forming a semiconductor arrangement includes forming a gate dielectric layer over a semiconductor layer. A gate electrode layer is formed over the gate dielectric layer. A first gate mask is formed over the gate electrode layer. The gate electrode layer is etched using the first gate mask as an etch template to form a first gate electrode. A first dopant is implanted into the semiconductor layer using the first gate mask and the first gate electrode as an implantation template to form a first doped region in the semiconductor layer.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first isolation structure which has a first corner. The semiconductor device also includes a first well region with a first conductive type. The semiconductor device includes further includes a gate structure over the first well region and covers a portion of the first corner of the first isolation structure. In addition, the semiconductor device includes a first doped region and a second doped region disposed on two opposites of the gate structure. Each of the first doped region and the second doped region has the first conductive type. The semiconductor device also includes a first counter-doped region in the first well region with a second conductive type different from the first conductive type. The first counter-doped region covers the first corner of the first isolation structure.

Abstract: A processing path generating device including an intuitive path teaching device and a controller is provided. The intuitive path teaching device is provided for gripping and moving with respect to a workpiece to create a moving path. The intuitive path teaching device has a detecting portion for detecting a surface feature of the workpiece. The controller is connected to the intuitive path teaching device. The controller generates a processing path according to the moving path of the intuitive path teaching device and the surface feature of the workpiece.

Abstract: A cross laser calibration device used to calibrate a tool center point is provided. The calibration device includes a coordinate orifice plate, a set of cross laser sensors and a rotational and translational movement mechanism. The coordinate orifice plate has an orifice center point. The set of cross laser sensors is arranged on the coordinate orifice plate to generate cross laser lines intersecting at the orifice center point. The set of cross laser sensors is driven by the second motor to rotate around the center point of the second motor, wherein the orifice center point has an off-axis setting relative to the center point of the second motor.

Abstract: Some embodiments relate to an integrated chip that includes a first source/drain region and a second source/drain region disposed in a substrate. A plane that is substantially perpendicular to an upper surface of the substrate traverses the first source/drain region and the second source/drain region. Agate electrode extends over a channel region in the substrate between the first source/drain region and the second source/drain region. The gate electrode is separated from the channel region by way of a charge trapping dielectric structure. The charge trapping dielectric structure includes a tunnel dielectric layer, a charge trapping dielectric layer over the tunnel dielectric layer, and a blocking dielectric layer over the charge trapping dielectric layer. The channel region has a channel width measured perpendicularly to the plane, and the tunnel dielectric layer has different thicknesses at different respective points along the channel width.

Abstract: This invention relates to an iridium metal complex. The iridium metal complex comprises no more than three 1,3-dihydro-2H-benzo[d]imidazol-2-ylidene based carbene cyclometalate ligands. The iridium metal complex provides a blue emission. This is useful for organic light emitting diode (OLED) components where blue emitters have trailed behind the advances of red and green emitters.

Abstract: This invention relates to an iridium metal complex. The iridium metal complex comprises no more than three 1,3-dihydro-2H-benzo[d]imidazol-2-ylidene based carbene cyclometalate ligands. The iridium metal complex provides a blue emission. This is useful for organic light emitting diode (OLED) components where blue emitters have trailed behind the advances of red and green emitters.

Abstract: A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.

Abstract: A method of forming a semiconductor arrangement includes forming a gate dielectric layer over a semiconductor layer. A gate electrode layer is formed over the gate dielectric layer. A first gate mask is formed over the gate electrode layer. The gate electrode layer is etched using the first gate mask as an etch template to form a first gate electrode. A first dopant is implanted into the semiconductor layer using the first gate mask and the first gate electrode as an implantation template to form a first doped region in the semiconductor layer.