Abstract: A heat dissipation module for removing heat from a heat generating component, includes a block, a heat pipe and a fin unit. The block includes a first surface and a second surface. One end of the heat pipe is thermally attached to the fin unit, and the other end of the heat pipe is thermally attached to the first surface of the block. A groove is defined in the second surface of the block for fittingly receiving the heat generating component therein.

Abstract: Organic light emitting display (OLED) devices and methods for fabricating the same are disclosed. An exemplary OLED device comprises a substrate with a thin film transistor (TFT) formed over a first portion thereof. A color filter layer is formed over a second portion of the substrate. A planarization layer overlies the color filter layer and the TFT. A pair of openings is formed through the planarization layer and portions of the TFT, respectively exposing a source/drain region of the TFT. A pair of conductive layers conformably covers the openings and portions of the planarization layer adjacent thereto, electrically connecting one of the source/drain regions of the TFT, wherein one of the conductive layers extends toward the color filter layer and the conductive layers are electrically isolated from each other. An anode is formed over the planarization, partially covering the conductive extending toward the color filter layer.

Abstract: An active organic electroluminescence panel display and a fabricating method thereof are disclosed. A thin film transistor array comprising a plurality of thin film transistors, a plurality of datalines and a plurality of scanlines are formed on a substrate. A passivation layer is formed on the substrate, covering the thin film transistor array. A contact opening is formed in the passivation layer for exposing a prescribed area of the array. An anode layer is formed on the passivation layer and fills into the contact opening. A blank layer is formed on the anode, covering the contact opening. A shadow mask is disposed on the blank layer. Then, a sputtering process is performed to form an organic luminescent layer. The shadow mask is then removed, and a cathode layer is formed on the organic luminescent layer for forming an active organic electroluminescence panel display.

Abstract: Electroluminescent devices and methods for fabricating the same are provided. An exemplary embodiment of an electroluminescent device comprises a substrate. A thin film transistor (TFT) is formed on the substrate. An insulating layer is formed to overlie the TFT and the substrate. An opening is formed in the insulating layer, exposing a source/drain region of the TFT. A conductive layer is formed over a portion of the insulating layer, filling the opening. A protection layer is formed overlying a portion of the insulating layer and the conductive layer. A light-emitting layer is formed overlying a portion of the conductive layer not covered by the protection layer. A top electrode is formed to overlie the light-emitting layer.

Abstract: Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.

Abstract: Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.

Abstract: A method for manufacturing a thin film transistor of the invention comprises steps of: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a polysilicon layer on the gate insulating layer; forming an etching-stop layer on the polysilicon layer and corresponding to the gate electrode; forming a heavily doped polysilicon layer on the etching-stop layer and the polysilicon layer, the heavily doped polysilicon layer exposing a part of the etching-stop layer; and forming a source electrode and a drain electrode on the heavily doped polysilicon layer, and the source and drain electrode relatively positioned above the two sides of the gate electrode.

Abstract: A fuse resistance monitoring system is disclosed to comprise at least one non-regenerative sense amplifier; at least one fuse module having at least one fuse cell coupled to a first terminal of the sense amplifier; and a reference resistor coupled to a second terminal of the sense amplifier, wherein a source voltage node between the fuse module and the sense amplifier is monitored to reflect a resistance of the fuse cell.

Abstract: A method for fabricating organic electroluminescent elements comprising an LTPS-TFT as driving circuits. The method comprises providing a substrate, forming an LTPS-TFT on the substrate, and forming an OLED electrically connecting the LTPS-TFT. Specifically, the method for forming a channel region of the LTPS-TFT includes forming a polysilicon layer with a predetermined channel region, and performing an implantation process on the predetermined channel region.

Abstract: An organic light emitting diode (OLED) structure includes a transparent conductive layer disposed on a top surface of a substrate, an organic thin film disposed on the transparent conductive layer and covering the transparent conductive layer, and a metal layer disposed on the organic thin film. A width of a bottom surface of the transparent conductive layer is greater than a width of a top surface of the transparent conductive layer.

Abstract: Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.

Abstract: A fuse resistance monitoring system is disclosed to comprise at least one non-regenerative sense amplifier; at least one fuse module having at least one fuse cell coupled to a first terminal of the sense amplifier; and a reference resistor coupled to a second terminal of the sense amplifier, wherein a source voltage node between the fuse module and the sense amplifier is monitored to reflect a resistance of the fuse cell.

Abstract: A method and system is disclosed for device trimming. A device trimming system comprises at least one reference device to be trimmed having a reference electrical parameter, at least one trimming device to be coupled with the reference device for forming a trimmed reference device providing an altered reference electrical parameter based on a combination of the reference device and the trimming device, and at least one electrical fuse based control module for controlling whether the trimming device is to be coupled with the reference device based on a state of the electrical fuse.

Abstract: An active organic electroluminescence panel display and a fabricating method thereof are disclosed. A thin film transistor array comprising a plurality of thin film transistors, a plurality of datalines and a plurality of scanlines are formed on a substrate. A passivation layer is formed on the substrate, covering the thin film transistor array. A contact opening is formed in the passivation layer for exposing a prescribed area of the array. An anode layer is formed on the passivation layer and fills into the contact opening. A blank layer is formed on the anode, covering the contact opening. A shadow mask is disposed on the blank layer. Then, a sputtering process is performed to form anorganic luminescent layer. The shadow mask is then removed, and a cathode layer is formed on the organic luminescent layer for forming an active organic electroluminescence panel display.

Abstract: A display unit of an active-matrix organic light emitting display is provided. The display unit includes a first transistor, a second transistor, and an organic light emitting diode. The display unit uses a P-type LTPS-TFT having a lower threshold voltage to reduce the operational Vgs. Therefore, the second transistor can provide the stable drain current for the organic light emitting diode. The organic light emitting diode can thus maintain its brightness for a longer period of time.

Abstract: A fabricating method of low temperature poly-silicon film is described. An amorphous silicon layer is formed on a substrate first; then, an anneal treatment is performed on the amorphous silicon layer for forming a poly-silicon layer (poly-silicon film) from the amorphous silicon layer. Several mounds are formed on the surface of the poly-silicon layer. A surface treatment step is performed;, then, another laser anneal step is conducted on the poly-silicon layer. Since the size of these mounds on the surface of the poly-silicon layer can be reduced, the issue that the mounds are too big and have different sizes in the prior art can be resolved.

Abstract: A multi-chip semiconductor package structure. The structure includes two chips and two lead frames. The leads on one of the lead frames have inner leads at one end and joint sections at the other end. The joint sections are connected with another lead frame. Both lead frames use a common set of external leads. The two chips and two lead frames are joined together forming a lead-on-chip structure with the two chips facing each other back-to-back. The assembly except the external leads is enclosed by packaging material.

Abstract: An organic light emitting diode (OLED) structure includes a transparent conductive layer disposed on a top surface of a substrate, an organic thin film disposed on the transparent conductive layer and covering the transparent conductive layer, and a metal layer disposed on the organic thin film. A width of a bottom surface of the transparent conductive layer is greater than a width of a top surface of the transparent conductive layer.

Abstract: A fabricating method of low temperature poly-silicon film is described. An amorphous silicon layer is formed on a substrate first; then, an anneal treatment is performed on the amorphous silicon layer for forming a poly-silicon layer (poly-silicon film) from the amorphous silicon layer. Several mounds are formed on the surface of the poly-silicon layer. A surface treatment step is performed; then, another laser anneal step is conducted on the poly-silicon layer. Since the size of these mounds on the surface of the poly-silicon layer can be reduced, the issue that the mounds are too big and have different sizes in the prior art can be resolved.

Abstract: A fabricating method of low temperature poly-silicon film is described. An amorphous silicon layer is formed on a substrate first; then, an anneal treatment is performed on the amorphous silicon layer for forming a poly-silicon layer (poly-silicon film) from the amorphous silicon layer. Several mounds are formed on the surface of the poly-silicon layer. A surface treatment step is performed; then, another laser anneal step is conducted on the poly-silicon layer. Since the size of these mounds on the surface of the poly-silicon layer can be reduced, the issue that the mounds are too big and have different sizes in the prior art can be resolved.