Abstract: A multi-chip semiconductor package structure. The structure includes two chips and two lead frames. The leads on one of the lead frames have inner leads at one end and joint sections at the other end. The joint sections are connected with another lead frame. Both lead frames use a common set of external leads. The two chips and two lead frames are joined together forming a lead-on-chip structure with the two chips facing each other back-to-back. The assembly except the external leads is enclosed by packaging material.

Abstract: A multi-chip semiconductor package structure. The structure includes two chips and two lead frames. The leads on one of the lead frames have inner leads at one end and joint sections at the other end. The joint sections are connected with another lead frame. Both lead frames use a common set of external leads. The two chips and two lead frames are joined together forming a lead-on-chip structure with the two chips facing each other back-to-back. The assembly except the external leads is enclosed by packaging material.

Abstract: A multi-chip semiconductor package structure. The structure includes two chips and two lead frames. The leads on one of the lead frames have inner leads at one end and joint sections at the other end. The joint sections are connected with another lead frame. Both lead frames use a common set of external leads. The two chips and two lead frames are joined together forming a lead-on-chip structure with the two chips facing each other back-to-back. The assembly except the external leads is enclosed by packaging material.

Abstract: A voltage reference circuit that will remain constant and independent of changes in the operating temperature that is correlated to the bandgap voltage of silicon is described. The voltage reference circuit will be incorporated within an integrated circuit and will minimize currents into the substrate. The bandgap voltage reference circuit has a bandgap voltage referenced generator that will generate a first referencing voltage having a first temperature coefficient, and a compensating voltage generator that will generate a second referencing voltage having a second temperature coefficient. The second temperature coefficient is approximately equal and of opposite sign to the first temperature coefficient. A voltage summing circuit will sum the first referencing voltage and the second referencing voltage to create the temperature independent voltage.