Abstract: An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.

Abstract: The present invention provides a method of modulating the expression of a gene containing expanded nucleotide repeats in a cell, comprising: inhibiting the biological activity of SPT4 or SUPT4H; and regulating the formation of R-loops. The inhibition step can effectively reduce the expression of the gene containing the expanded nucleotide repeats and the regulatory step can further enhance the inhibition step. The inhibition step and the regulation step are for the purpose of regulating gene expression by interfering the capacity of RNA polymerase II transcribing over a DNA template with lengthy nucleotide repeats.

Abstract: A multi-compartment bed radial flow adsorber capable of realizing large telescopic deformation mainly comprises an adsorber body, the adsorber body consists of an upper seal head, a barrel, a lower seal head and a pressed shell connected with an upper connecting pipe and a lower connecting pipe, the upper seal head and the lower seal head of the shell are each provided with an upper gas inlet and outlet pipe and a lower gas inlet and outlet pipe, a supporting seat is arranged at the bottom in the shell, an adsorption barrel is arranged above the supporting seat and consists of a plurality of concentric barrels with different diameters, a plurality of annular spaces are formed by the concentric barrels with different diameters, different types of adsorbents can be filled in the annular spaces, and the adsorption barrel is composed of a pore plate or a grid.

Abstract: A kinase inhibitor, comprising a compound of formula (I) or a pharmaceutically acceptable salt, solvate, ester, acid, metabolite or prodrug thereof. A method and a use for using the inhibitor for treatment of diseases related to CDK9 and/or mutagenic activity thereof.

Abstract: Bonding a full-bridge device and an LLC device in a stack, or forming the full-bridge device and the LLC device on a same substrate, rather than connecting the devices, reduces a chip area associated with a power converter including the full-bridge device and the LLC device. Additionally, the full-bridge device and the LLC device consume less power because parasitic inductance and capacitance are reduced. Additionally, raw materials and production time are conserved that would otherwise have been used to connect the full-bridge device and the LLC device (e.g., via wires).

Abstract: An electrical connector includes an insulating housing and a terminal module. The terminal module is fastened in the insulating housing. The terminal module includes a plurality of corrosion resistance terminals. Each corrosion resistance terminal has a fastening portion. A front end of the fastening portion extends frontward to form a contacting portion. A rear end of the fastening portion defines a soldering portion. A surface of the contacting portion of each corrosion resistance terminal sequentially has a copper electroplating layer, a nickel-tungsten electroplating layer, a gold electroplating layer, a platinum alloy electroplating layer and a rhodium-ruthenium alloy electroplating layer from an inside to an outside. A surface of the fastening portion of each corrosion resistance terminal is covered with an electro-deposition coating.

Abstract: A method for generating a user interface for analyzing a patient-specific electronic medical or health record that includes a problem list includes the steps of grouping related potential problems into problem list categories, grouping a subset of the problems into clusters within the categories, mapping, using a computer, entries in the problem list with a respective description in an interface terminology, associating one or more of other medical data, e.g., medication, lab results, procedures, imaging results, past medical history or surgeries, notes, vital signs, or allergy data in the record with at least one problem, receiving a request corresponding to a problem or problem list category or to other medical data, identifying non-problem data in the record grouped in a cluster with the requested data, and modifying a user interface to display the identified data separate from other similar medical data included in the electronic medical or health record.

Abstract: The present disclosure provides embodiments of semiconductor structures. A semiconductor structure according to the present disclosure includes a substrate, a fin-shaped structure disposed over the substrate, the fin-shaped structure including a plurality of first semiconductor layers interleaved by a plurality of second semiconductor layers, a gate structure disposed over a channel region of the fin-shaped structure, a first source/drain feature extending through at least a first portion the fin-shaped structure, a second source/drain feature extending through at least a second portion of the fin-shaped structure, and a backside metal line disposed below the substrate and spaced apart from the first source/drain feature and the second source/drain feature.

Abstract: In some embodiments, the present disclosure relates to a method of forming a high electron mobility transistor (HEMT) device. The method includes forming a passivation layer over a substrate. A source contact and a drain contact are formed within the passivation layer. A part of the passivation layer is removed to form a cavity. The cavity has a lower portion formed by a first sidewall and a second sidewall of the passivation layer and an upper portion formed by the first sidewall of the passivation layer and a sidewall of the source contact. A gate structure is formed within the passivation layer between the drain contact and the cavity. A cap structure is formed within the cavity.

Abstract: A semiconductor device includes a first semiconductor structure including a first high electron mobility transistor (HEMT) device, wherein the first HEMT device includes a first gate, a first source, and a first drain; and a second semiconductor structure stacked above and bonded to the first semiconductor structure, wherein the second semiconductor structure includes a second HEMT device and a third HEMT device, wherein the second HEMT device includes a second gate, a second source, and a second drain that is electrically connected to the first source, wherein the third HEMT device includes a third gate, a third source, and a third drain that is electrically connected to the first gate.

Abstract: The application relates to an assembly for controlling detonation wave mode of a rotating detonation combustion chamber, which includes an inner barrel, an outer plate and at least one sectoral direction-changing block. The outer plate is sleeved outside the inner barrel. An annular cavity is formed between the outer plate and the inner barrel. At least one groove is arranged on one side of the outer plate close to the inner barrel. The groove wall comprises an arc edge and a straight edge. The groove is connected with the annular cavity. The sectoral direction-changing blocks are arranged in the grooves in one-to-one correspondence. An arc edge of the sectoral direction-changing block is positioned far away from the inner barrel.

Abstract: A multi-dimensional microphone stand includes a first rotational module, a first rotational arm, a second rotational module, a second rotational arm, and a third rotational module. The first rotational arm is connected to the first rotational module, and the second rotational module is connected to the first rotational arm, and the first rotational module is rotatable relative to the second rotational module. The second rotational arm is connected to the second rotational module, the third rotational module is connected to the second rotational arm, and the second rotational module is rotatable relative to the third rotational module. In addition, in a folded state, the first rotational arm and the second rotational arm are arranged side by side and connected to the second rotational module in parallel.

Abstract: A memory device includes a main array comprising main memory cells; a redundancy array comprising redundancy memory cells; and write circuitry configured to perform a first programming operation on a main memory cell, to detect whether a current of the main memory cell exceeds a predefined current threshold during the first programming operation, and to disable a second programming operation for a redundancy memory cell if the current of the main memory cell exceeds the predefined current threshold during the first programming operation.

Abstract: An electrical connector includes an insulation body, a main plate, a side plate and a plurality of terminals. The insulation body has at least one aperture penetrating through an upper surface and a lower surface of the insulation body. The main plate is fastened in the insulation body. The side plate is fastened in the insulation body. The side plate is disposed to one side of the main plate. The main plate has a first corresponding side. The side plate has a second corresponding side. The second corresponding side is corresponding to the first corresponding side in the at least one aperture. The first corresponding side and the second corresponding side are exposed to an outside of the insulation body through the at least one aperture. The plurality of the terminals are mounted in the insulation body.

Abstract: A coking system comprises the 1st to the m-th heating units and the 1st to the n-th coke towers, each of the m heating units being in communication with the n coke towers, respectively, each of the n coke towers being in communication with one or more separation towers, respectively, in communication with the m-th heating unit and optionally with the i-th heating unit. The coking system can at least utilize petroleum series or coal series raw materials to produce high-quality needle coke with stable performance.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device. The semiconductor device includes a channel layer disposed over a base substrate, and an active layer disposed on the channel layer. A source contact and a drain contact are over the active layer and are laterally spaced apart from one another along a first direction. A gate electrode is arranged on the active layer between the source contact and the drain contact. A passivation layer is arranged on the active layer and laterally surrounds the source contact, the drain contact, and the gate electrode. A conductive structure is electrically coupled to the source contact and is disposed laterally between the gate electrode and the source contact. The conductive structure extends along an upper surface and a sidewall of the passivation layer.

Abstract: The present disclosure provides embodiments of semiconductor structures. A semiconductor structure according to the present disclosure includes a substrate, a fin-shaped structure disposed over the substrate, the fin-shaped structure including a plurality of first semiconductor layers interleaved by a plurality of second semiconductor layers, a gate structure disposed over a channel region of the fin-shaped structure, a first source/drain feature extending through at least a first portion the fin-shaped structure, a second source/drain feature extending through at least a second portion of the fin-shaped structure, and a backside metal line disposed below the substrate and spaced apart from the first source/drain feature and the second source/drain feature.

Abstract: The present disclosure relates to a liquid fuel self-sustaining combustion burner for flame synthesis, including a swirl-flow cylinder and a stable combustion cylinder. A swirl-flow plate is disposed at an open end of the swirl-flow cylinder and defines swirl-flow outlets. A tangential inlet tube is mounted on the swirl-flow cylinder and in fluid communication with the swirl-flow chamber. An open end of the swirl-flow cylinder extends into the stable combustion chamber. The fuel can be atomized by an atomizer and sprayed into the stable combustion chamber for combustion. Air introduced from the tangential inlet tube can flow into the swirl-flow chamber and advance spirally around the central stabilizing column to reach the swirl-flow plate. The airflow is partially injected into the stable combustion chamber through the swirl-flow outlets, and then continues to spirally advance. An atomizing nozzle of the atomizer is located inside the swirling airflow.