Abstract: The present invention is a semiconductor nanoparticle composed of a semiconductor crystal of a compound containing Ag, Au and S as essential constitutional elements. A AgAuS-based compound constituting the semiconductor nanoparticle has a total content of Ag, Au and S of 95 mass % or more. In addition, the compound is preferably a AgAuS ternary compound represented by the general formula Ag(nx)Au(ny)S(nz). In the formula, n is any positive integer. x, y and z represent proportions of the number of atoms of the respective atoms of Ag, Au and S in the compound and are real numbers satisfying 0<x, y, z?1, and x/y is 1/7 or more and 7 or less.

Abstract: The present invention relates to a metal wiring, to be formed on a flexible substrate, including a sintered body of silver particles. The sintered body constituting the metal wiring has a volume resistivity of 20 ??·cm or less, hardness of 0.38 GPa or less, and a Young's modulus of 7.0 GPa or less. A conductive sheet provided with the metal wiring can be produced by applying/calcinating, on a substrate, a metal paste containing, as a solid content, silver particles having prescribed particle size and particle size distribution, and further containing, as a conditioner, an ethyl cellulose having a number average molecular weight of 10,000 or more and 90,000 or less. The metal wiring of the present invention is excellent in bending resistance with change in electrical characteristics suppressed even through repetitive bending deformation.

Abstract: A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A shower head that supplies a process gas in a vapor phase growth apparatus includes a mixing chamber; and a plurality of cooling portions provided below the mixing chamber with gaps between cooling portions. The cooling portion includes a cooling hole provided in a horizontal direction, and the gaps extend linearly in the horizontal direction. The shower head further includes, below the gaps, a plurality of buffer regions extending linearly in the horizontal direction. The shower head further includes, below the buffer regions, a shower plate including a plurality of through holes disposed at a predetermined interval. The shower head can uniformly supply the process gas.

Abstract: Provided is a flux activator containing a halogen compound represented by formula 1 below: where X1 and X2 represent different halogen atoms, R1 and R2 are each a group represented by any one of formulas —OH, —O—R3, —O—C(?O)—R4, and —O—C(?O)—NH—R5, R1 and R2 optionally represent the same group or different groups, R3, R4, and R5 are each an aromatic hydrocarbon group having 1 to 18 carbon atoms or an aliphatic hydrocarbon group having 1 to 18 carbon atoms, and R3, R4, and R5 optionally represent the same group or different groups.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

Abstract: A heater according to an embodiment of the present disclosure includes a heater element including a flat heat generating body, a linear slit formed in a linearly opened manner with one end arranged at an outer circumference of the heat generating body and the other end arranged in the turnover portion of the heat generating body, and a turnover portion formed in an opened manner to continue from the other end, an opening diameter of the turnover portion being larger than a slit width of the linear slit, the heater element generating heat by electrification, and a pair of electrodes connected to a predetermined face of the heater element, a voltage being applied on the electrodes during electrification of the heater element.

Abstract: A vapor phase growth apparatus according to an embodiment includes n reaction chambers, a main gas supply passage supplying a process gas to the n reaction chambers, a main mass flow controller arranged in the main gas supply passage to control a flow rate of the process gas flowing in the main gas supply passage, (n?1) first sub gas supply passages being branches of the main gas supply passage to supply divided process gases to the (n?1) reaction chambers among the n reaction chambers, (n?1) first sub mass flow controllers arranged in the first sub gas supply passages to control flow rates of the process gases flowing in the first sub gas supply passages, and one second sub gas supply passage being a branch of the main gas supply passage to supply a remainder of the process gas to the one reaction chamber other than the (n?1) reaction chambers.

Abstract: A vapor phase growth apparatus according to one embodiment includes a reaction chamber, a storage container storing organic metal, a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid, a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container, an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas, and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.

Abstract: A vapor deposition method supplies a material gas onto a substrate while heating the substrate by a heater to sequentially form a plurality of films with vapor deposition, grows the film under a constant output control, which keeps an output of the heater at a predetermined output in each of the plurality of films, until a total film thickness of the films formed on the substrate reaches a threshold value, and grows the film under a temperature feedback control, which controls the output of the heater such that a temperature of the substrate measured by a radiation thermometer becomes a predetermined temperature, after the total film thickness reaches the threshold value.

Abstract: According to an aspect of the invention, there is provided a method for controlling a vapor phase growth apparatus, the vapor phase growth apparatus including a first reactor and a second reactor, a first substrate being processed in the first reactor, a second substrate being processed in the second reactor, the method including suppling a gas including a first source gas including organic metal, a second source gas including a group V element and a dilution gas to the first reactor and the second reactor at a predetermined flow rate, the first source gas, the second source gas and the dilution gas being supplied from gathered gas sources, respectively, rotating the first substrate and the second substrate at a predetermined rotational speed to form films, the method including: in the first reactor, supplying the first source gas, the second source gas and the dilution gas to form the films; in the second reactor, supplying the dilution gas without supplying the first source gas; and stopping forming the fil

Abstract: A vapor phase growth apparatus according to an embodiment includes: a reactor; a supporter provided in the reactor, a substrate being capable of being placed on the supporter; a heater heating the substrate; a warpage measurement device measuring warpage of the substrate; a controller determining whether the measured warpage or a rate of change in the warpage is greater than a threshold value of the warpage or the rate of change in the warpage and stopping the heater on the basis of a determination result, the threshold value being stored in advance; a supplier supplying a process gas to the reactor; and an exhaust exhausting an exhaust gas from the reactor.

Abstract: A vapor phase growth method of growing a film on a substrate by supplying material gases to the substrate while heating the substrate with a heating unit according to an embodiment, the method includes: measuring a temperature of the substrate with a radiation thermometer; executing a temperature feedback control to control an output of the heating unit to cause a measurement value of the radiation thermometer to have a set value when a film is not grown on the substrate; and executing a constant output control to maintain an output of the heating unit constant when a film causing thin-film interference in a wavelength measured by the radiation thermometer is grown on the substrate.

Abstract: Provided is a flux activator containing a halogen compound represented by formula 1 below: where X1 and X2 represent different halogen atoms, R1 and R2 are each a group represented by any one of formulas —OH, —O—R3, —O—C(?O)—R4, and —O—C(?O)—NH—R5, R1 and R2 optionally represent the same group or different groups, R3, R4, and R5 are each an aromatic hydrocarbon group having 1 to 18 carbon atoms or an aliphatic hydrocarbon group having 1 to 18 carbon atoms, and R3, R4, and R5 optionally represent the same group or different groups.