Abstract: A vapor phase growth apparatus includes: a reaction chamber; a lower region provided below the reaction chamber; a rotating body provided in the reaction chamber; a rotating shaft connected to the rotating body and having a lower end provided in the lower region; a support portion provided in an upper portion of the rotating body and supporting a substrate; a reaction gas supply port provided on the reaction chamber and supplying a reaction gas for forming a film on the substrate into the reaction chamber; a rotating mechanism including a rotor, the rotating mechanism provided in the lower region and configured to rotate the rotating shaft; a first bearing provided in the lower region and rotatably supporting the rotating shaft; a second bearing provided below the first bearing in the lower region, the second bearing rotatably supporting the rotating shaft; a first air supply port provided above the rotating mechanism and the first bearing in the lower region, the first air supply port supplying a first gas i

Abstract: A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; and a support portion disposed below the shower plate inside the reaction chamber to place a substrate thereon. Then, the shower plate includes a plurality of first and second lateral gas passages disposed within different horizontal planes and first and second gas ejection holes connected to the first and second lateral gas passages. Further, the shower plate includes a center lateral gas passage that passes through a position directly above the rotation center of the support portion and third gas ejection holes connected to the center lateral gas passage. Then, the gases ejected from the first and second gas ejection holes and the center gas ejection holes are independently controllable.

Abstract: A shower head according to an embodiment includes: a mixing chamber to which process gas is supplied; a plurality of cooling portions provided below the mixing chamber with a gap therebetween, the cooling portion having a cooling hole provided in a horizontal direction, the process gas being introduced from the mixing chamber to the gaps; a plurality of buffer regions provided below the gaps, the process gas being introduced from the gaps to the buffer regions; and a shower plate provided below the buffer regions, the shower plate having a plurality of through holes disposed at a predetermined interval, the process gas being introduced from the buffer regions to the through holes.

Abstract: A vapor phase growth apparatus includes: a reaction chamber; a support provided in the reaction chamber, the support on which a substrate can be placed; a first gas supply passage supplying first gas including ammonia; a second gas supply passage supplying second gas including metal-organic gas; a purge gas supply passage supplying purge gas including ammonia and at least one selected from nitrogen, hydrogen, and inert gas; and a shower head including first region and second region provided around the first region, process gas ejection holes provided in the first region, connected to the first gas supply passage and second gas supply passage and through which the first gas and second gas are supplied into the reaction chamber, a purge gas ejection hole provided in the second region, connected to the purge gas supply passage and through which purge gas is supplied into the reaction chamber.

Abstract: A vapor phase growth method using a vapor phase growth apparatus including a reaction chamber, a shower plate disposed in the upper portion of the reaction chamber so as to supply a gas into the reaction chamber, and a support portion provided below the shower plate inside the reaction chamber so as to place a substrate thereon, the method includes: placing the substrate on the support portion; heating the substrate; preparing a plurality of kinds of process gases for a film formation process; preparing a mixed gas by controlling mixing ratio between a first purging gas and a second purging gas, wherein the first purging gas and the second purging gas are selected from hydrogen and inert gases, a molecular weight of the first purging gas is smaller than an average molecular weight of the plurality of kinds of process gases and a molecular weight of the second purging gas is larger than the average molecular weight of the plurality of kinds of process gases, so that the average molecular weight of the mixed ga

Abstract: A vapor phase growth apparatus according to as embodiment includes n reaction chambers, a main gas supply path supplying a process gas to the n reaction chambers, a main mass flow controller controlling a flow rate of the process gas, a branch portion branching the main gas supply path, n sub gas supply paths branched from the main gas supply path at the branch portion, the n sub gas supply paths supplying branched process gases to the n reaction chambers, n first stop valves in the n sub gas supply paths between the branch portion and the n reaction chambers, distances from the n first stop valves to the branch portion are less than distances from the n first stop valves to the n reaction chambers, and n sub mass flow controllers in the n sub gas supply paths between the n first stop valves and the n reaction chambers.

Abstract: A film-forming apparatus and film-forming method comprising, a chamber, a first gas supply unit supplying a reaction gas for a film-forming process to the chamber, a substrate-supporting portion supporting a substrate placed in the chamber, a heating unit heating the substrate from below the substrate-supporting portion, a rotary drum supporting the substrate-supporting portion on a top thereof, and including the heating unit disposed therein, a rotary shaft disposed in a lower part of the chamber, and rotating the rotary drum, a reflector reflecting heat from the heating unit, surrounding the rotary drum, and being disposed so as to have an upper end higher in height than an upper end of the substrate-supporting portion, and a second gas supply unit supplying a hydrogen gas or an inert gas between the rotary drum and the reflector.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A vapor phase growth apparatus in an embodiment includes: a shower plate in an upper portion of the reaction chamber, the shower plate having first lateral gas flow passages in a first horizontal plane, first longitudinal gas flow passages being connected to the first lateral gas flow passages, the first longitudinal gas flow passages extending in a longitudinal direction, each of the first longitudinal gas flow passages having a first gas ejection hole, the shower plate having second lateral gas flow passages in a second horizontal plane upper than the first horizontal plane, second longitudinal gas flow passages being connected to the second lateral gas flow passages, the second longitudinal gas flow passages extending in the longitudinal direction through between the first lateral gas flow passages, each of the second longitudinal gas flow passages having a second gas ejection hole, and a support unit provided below the shower plate.

Abstract: A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

Abstract: A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a gas supply path connected to an organic metal supply source at a first connection, the gas supply path being connected to a carrier gas supply source, the gas supply path supplies a process gas including organic metal and a carrier gas into the reaction chamber; a gas discharge path connected to the organic metal supply source at a second connection, the gas discharge path discharges the process gas to the outside of the apparatus; a first mass flow controller and a first adjustment device provided at the gas supply path; a second adjustment device provided at the gas discharge path; and a shortcut path connecting the gas supply path to the gas discharge path. One of the first and the second adjustment device is a back pressure regulator, and the other is a mass flow controller.

Abstract: A vapor deposition method supplies a material gas onto a substrate while heating the substrate by a heater to sequentially form a plurality of films with vapor deposition, grows the film under a constant output control, which keeps an output of the heater at a predetermined output in each of the plurality of films, until a total film thickness of the films formed on the substrate reaches a threshold value, and grows the film under a temperature feedback control, which controls the output of the heater such that a temperature of the substrate measured by a radiation thermometer becomes a predetermined temperature, after the total film thickness reaches the threshold value.

Abstract: A vapor phase growth apparatus includes: a first supporter supporting a first substrate; a first heater heating the first substrate; a first gas feeder supplying a first process gas onto a surface of the first substrate; a first radiation thermometer measuring a first temperature on the surface of the first substrate, the first temperature taking no account of an effect of emissivity of the first substrate; a first thermometer acquiring an actual temperature of the first substrate; a first temperature controller controlling the actual temperature to be a predetermined temperature by using the first heater; a second supporter supporting a second substrate; a second heater heating the second substrate; a second radiation thermometer measuring a second temperature on a surface of the second substrate, the second temperature taking no account of an effect of emissivity of the second substrate; and a second temperature controller controlling the second heater based on the first temperature, the actual temperature,

Abstract: A heater according to an embodiment of the present disclosure includes a heater element including a flat heat generating body, a linear slit formed in a linearly opened manner with one end arranged at an outer circumference of the heat generating body and the other end arranged in the turnover portion of the heat generating body, and a turnover portion formed in an opened manner to continue from the other end, an opening diameter of the turnover portion being larger than a slit width of the linear slit, the heater element generating heat by electrification, and a pair of electrodes connected to a predetermined face of the heater element, a voltage being applied on the electrodes during electrification of the heater element.

Abstract: A vapor phase growth apparatus includes: a reaction chamber; a lower region provided below the reaction chamber; a rotating body provided in the reaction chamber; a rotating shaft connected to the rotating body and having a lower end provided in the lower region; a support portion provided in an upper portion of the rotating body and supporting a substrate; a reaction gas supply port provided on the reaction chamber and supplying a reaction gas for forming a film on the substrate into the reaction chamber; a rotating mechanism including a rotor, the rotating mechanism provided in the lower region and configured to rotate the rotating shaft; a first bearing provided in the lower region and rotatably supporting the rotating shaft; a second bearing provided below the first bearing in the lower region, the second bearing rotatably supporting the rotating shaft; a first air supply port provided above the rotating mechanism and the first bearing in the lower region, the first air supply port supplying a first gas i

Abstract: A vapor phase growth apparatus according to one embodiment includes a reaction chamber, a storage container storing organic metal, a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid, a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container, an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas, and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.

Abstract: A vapor phase growth apparatus according to an embodiment includes n (n is an integer equal to or greater than 1) reaction chambers each processing a substrate under a pressure less than atmospheric pressure, a cassette chamber having a cassette holding portion capable of placing a cassette holding the substrate on the cassette holding portion, internal pressure of the cassette chamber being able to be reduced to a pressure less than the atmospheric pressure, a transferring chamber provided between the reaction chamber and the cassette chamber and transferring the substrate under a pressure less than the atmospheric pressure, and a substrate standby portion capable of simultaneously holding n or more substrates processed in the reaction chamber and provided in a region having a heat-resistant temperature of 500° C. or more, internal pressure of the region being able to be reduced to a pressure less than the atmospheric pressure.

Abstract: A vapor phase growth apparatus includes a reaction chamber, a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber, a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group III element to the reaction chamber, a second gas supply path connected to the second gas ejection hole and supplying a second process gas including a group V element to the reaction chamber, a first connection path connecting the first gas supply path and the second gas supply path, and a first control unit controlling the passage and stop of gas through the first connection path.