Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.

Abstract: According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.

Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.

Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.

Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.

Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.

Abstract: A magnetic head according to an embodiment includes: a spin valve element with three terminals including a nonmagnetic base layer, a first terminal including a first magnetic layer, a second terminal including a second magnetic layer, and a third terminal including a third magnetic layer; and a slider including a first external lead terminal connecting to the first terminal, a second external lead terminal connecting to the second terminal, and a third external lead terminal connecting to the third terminal, in an operation, a first current being caused to flow from the second external lead terminal to the third terminal via the second terminal and the nonmagnetic base layer, and a second current that is lower than the first current being caused to flow to the first terminal.

Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.

Abstract: A magnetic memory of an embodiment includes: a first nonmagnetic layer including a first and second faces; a first and second wirings disposed on a side of the first face; a third wiring disposed on a side of the second face; a first transistor, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor, one of source and drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, a first terminal of the magnetoresistive element being connected to the first nonmagnetic layer; and a third transistor, one of source and drain of the third transistor being connected to the second terminal, the other one being connected to the third wiring.

Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.

Abstract: According to one embodiment, a magnetic memory including a first magnetic unit, a first nonmagnetic unit, a first fixed magnetic unit, a second fixed magnetic unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first nonmagnetic unit contacts one end of the first magnetic unit. The first fixed magnetic unit is separated from the first magnetic unit. The first fixed magnetic unit contacts the first nonmagnetic unit. The second fixed magnetic unit is separated from the first magnetic unit and the first fixed magnetic unit. The second fixed magnetic unit is in contact with the first nonmagnetic unit. The second fixed magnetic unit is magnetized in a direction different from a magnetization direction of the first fixed magnetic unit.

Abstract: A magnetoresistive element according to an embodiment includes: a multilayer element including a first magnetic layer, a magnetization direction of the first magnetic layer being pinned, a nonmagnetic layer disposed on the first magnetic layer, a second magnetic layer disposed in a first region on the nonmagnetic layer, a magnetization direction of the second magnetic layer being pinned and antiparallel to the magnetization direction of the first magnetic layer, and a third magnetic layer disposed in a second region that is different from the first region on the nonmagnetic layer near one of two opposite end faces of the nonmagnetic layer, a magnetization direction of the third magnetic layer being changeable by an external magnetic field, a lower face of the nonmagnetic layer being in contact with an upper face of the first magnetic layer.

Abstract: A magnetic head according to an embodiment includes: a non-local spin valve element with three terminals including a nonmagnetic base layer, a first terminal including a first magnetic layer, a second terminal including a second magnetic layer, and a third terminal including a third magnetic layer; and a slider including a first external lead terminal connecting to the first terminal, a second external lead terminal connecting to the second terminal, and a third external lead terminal connecting to the third terminal, in an operation, a first current being caused to flow from the second external lead terminal to the third terminal via the second terminal and the nonmagnetic base layer, and a second current that is lower than the first current being caused to flow to the first terminal.

Abstract: A magnetoresistive element according to an embodiment includes: a multilayer element including a first magnetic layer, a magnetization direction of the first magnetic layer being pinned, a nonmagnetic layer disposed on the first magnetic layer, a second magnetic layer disposed in a first region on the nonmagnetic layer, a magnetization direction of the second magnetic layer being pinned and antiparallel to the magnetization direction of the first magnetic layer, and a third magnetic layer disposed in a second region that is different from the first region on the nonmagnetic layer near one of two opposite end faces of the nonmagnetic layer, a magnetization direction of the third magnetic layer being changeable by an external magnetic field, a lower face of the nonmagnetic layer being in contact with an upper face of the first magnetic layer.

Abstract: According to one embodiment, a magnetic memory including a first magnetic unit, a first nonmagnetic unit, a first fixed magnetic unit, a second fixed magnetic unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first nonmagnetic unit contacts one end of the first magnetic unit. The first fixed magnetic unit is separated from the first magnetic unit. The first fixed magnetic unit contacts the first nonmagnetic unit. The second fixed magnetic unit is separated from the first magnetic unit and the first fixed magnetic unit. The second fixed magnetic unit is in contact with the first nonmagnetic unit. The second fixed magnetic unit is magnetized in a direction different from a magnetization direction of the first fixed magnetic unit.

Abstract: According to one embodiment, a spin-valve element includes a nonmagnetic unit, a first magnetic unit, a second magnetic unit, a third magnetic unit, a current source, and a voltage sensor. The current source is connected to the second magnetic unit and the third magnetic unit. The current source causes a current to flow between the second magnetic unit and the third magnetic unit via the nonmagnetic unit. The voltage sensor is connected to the second magnetic unit and the third magnetic unit. A maximum length of a contact surface between the first magnetic unit and the nonmagnetic unit is not more than a spin diffusion length of the nonmagnetic unit. A length of the first magnetic unit in a direction orthogonal to the contact surface is not more than 3 times a spin diffusion length of the first magnetic unit. The first magnetic unit does not contact an external electrode.

Abstract: According to one embodiment, a spin-valve element includes a nonmagnetic unit, a first magnetic unit, a second magnetic unit, a third magnetic unit, a current source, and a voltage sensor. The current source is connected to the second magnetic unit and the third magnetic unit. The current source causes a current to flow between the second magnetic unit and the third magnetic unit via the nonmagnetic unit. The voltage sensor is connected to the second magnetic unit and the third magnetic unit. A maximum length of a contact surface between the first magnetic unit and the nonmagnetic unit is not more than a spin diffusion length of the nonmagnetic unit. A length of the first magnetic unit in a direction orthogonal to the contact surface is not more than 3 times a spin diffusion length of the first magnetic unit. The first magnetic unit does not contact an external electrode.

Abstract: An example magnetoresistive element includes a nonmagnetic conductive layer; a first magnetic layer connected to the nonmagnetic conductive layer; a second magnetic layer connected to the nonmagnetic conductive layer so as to be distant from the first magnetic layer; a third magnetic layer connected to the nonmagnetic conductive layer so as be distant from the first magnetic layer; and first to third magnetic electrodes connected to the first to third magnetic layers respectively. A voltage is applied between the third magnetic electrode and the first magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the first magnetic layer, and a current is caused to flow between the third electrode and the second magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the second magnetic layer. The nonmagnetic conductive layer decreases in volume toward the one end face.

Abstract: A thermoelectric conversion element comprises a substrate, an insulating ferromagnetic layer, and a nonmagnetic metal layer. The insulating ferromagnetic layer is formed upwardly on the substrate and has a magnetization fixed in a certain direction. At least one trench is formed on a surface of this insulating ferromagnetic layer so as to extend in a direction along the surface of the insulating ferromagnetic layer. The nonmagnetic metal layer is formed conforming to a shape of the trench, upwardly on the insulating ferromagnetic layer including on a wall surface of the trench.

Abstract: A spin valve element according to an embodiment includes: a nonmagnetic base layer; a first terminal including a first magnetic layer connecting to a portion near one of opposing end faces of the nonmagnetic base layer; a second terminal including a second magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at a distance from the first terminal; a third terminal including a third magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at distances from the first and second terminals, the second terminal and the third terminal connecting to a current source that passes a sense current, and the first terminal and one of the second terminal and the third terminal connecting to a voltage detection unit that detects a voltage.