Patents by Inventor Yuuzo Kamiguchi
Yuuzo Kamiguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150096605Abstract: A thermoelectric converting thin line includes a thin line extending in one direction, a first ferromagnetic layer formed on a side of the thin line having a magnetization fixed in a plane in a direction intersecting with a direction along which the thin line extends, and a first nonmagnetic metal layer formed on the first ferromagnetic layer.Type: ApplicationFiled: July 30, 2014Publication date: April 9, 2015Inventors: Hiromi YUASA, Masaki KADO, Yuuzo KAMIGUCHI
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Patent number: 8989525Abstract: According to an embodiment, a light deflecting element includes a dielectric body, a first electrode, and a second electrode. The second electrode is configured to sandwich the dielectric body with the first electrode so as to apply a voltage to the dielectric body. The second electrode includes orthogonal portions that are substantially orthogonal to an incident direction of a light beam passing through the dielectric body, parallel portions that are substantially parallel to the incident direction of the light beam. The orthogonal portions and the parallel portions are formed in an alternate manner on the light beam incident side of the dielectric body. The second electrode includes a linear sloping portion that slopes in a direction toward intersection with the incident direction of the light beam. The orthogonal portions, the parallel portions, and the linear sloping portion are formed integrally.Type: GrantFiled: December 26, 2012Date of Patent: March 24, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Yuuzo Kamiguchi, Katsuya Sugawara, Masahiro Kanamaru, Keiichiro Yusu, Masatoshi Sakurai
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Publication number: 20150029609Abstract: A spin valve element according to an embodiment includes: a nonmagnetic base layer; a first terminal including a first magnetic layer connecting to a portion near one of opposing end faces of the nonmagnetic base layer; a second terminal including a second magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at a distance from the first terminal; a third terminal including a third magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at distances from the first and second terminals, the second terminal and the third terminal connecting to a current source that passes a sense current, and the first terminal and one of the second terminal and the third terminal connecting to a voltage detection unit that detects a voltage.Type: ApplicationFiled: July 23, 2014Publication date: January 29, 2015Inventors: Yuuzo KAMIGUCHI, Satoshi SHIROTORI, Shinobu SUGIMURA, Masayuki TAKAGISHI, Hitoshi IWASAKI
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Publication number: 20150030886Abstract: A magnetoresistive element according to an embodiment includes: a nonmagnetic conductive layer; a first magnetic layer connected to the nonmagnetic conductive layer; a second magnetic layer connected to the nonmagnetic conductive layer so as to be distant from the first magnetic layer; a third magnetic layer connected to the nonmagnetic conductive layer so as be distant from the first magnetic layer; and a first to third magnetic electrodes connected to the first to third magnetic layers respectively; a voltage being applied between the third magnetic electrode and the first magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the first magnetic layer, and a current being caused to flow between the third electrode and the second magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the second magnetic layer, the nonmagnetic conductive layer decreasing in volume toward the one end face.Type: ApplicationFiled: July 23, 2014Publication date: January 29, 2015Inventors: Satoshi SHIROTORI, Yuuzo KAMIGUCHI, Masayuki TAKAGISHI, Shinobu SUGIMURA, Hitoshi IWASAKI
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Publication number: 20140311542Abstract: A thermoelectric conversion element includes a substrate, a non-magnetic metal layer, an insulated ferromagnetic layer, and a metallic ferromagnetic layer. The insulated ferromagnetic layer is provided between the substrate and the non-magnetic metal layer. Magnetization of the insulated ferromagnetic layer is fixed in one direction. The metallic ferromagnetic layer is provided between the insulated ferromagnetic layer and the non-magnetic metal layer.Type: ApplicationFiled: March 6, 2014Publication date: October 23, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: HIROMI YUASA, YUUZO KAMIGUCHI
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Publication number: 20130258452Abstract: According to an embodiment, a light deflecting element includes a dielectric body, a first electrode, a second electrode, and a third electrode. Each of the second electrode and third electrode is configured to sandwich the dielectric body with the first electrode. The second electrode includes an electrode having a side that lies substantially orthogonal to an incident direction of a light beam, a side that is substantially parallel to the incident direction, and a side that intersects with the incident direction. The third electrode includes an electrode having a side that is aligned with the second electrode, a side that is substantially parallel to an incident direction of the light beam, and a side that intersects with the light beam, and that slopes in an opposite to that of the side of the second electrode that intersects with the light beam.Type: ApplicationFiled: December 28, 2012Publication date: October 3, 2013Inventors: Yuuzo KAMIGUCHI, Masahiro Kanamaru, Katsuya Sugawara, Keiichiro Yusu, Masatoshi Sakurai
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Publication number: 20130259417Abstract: According to an embodiment, a light deflecting element includes a dielectric body, a first electrode, and a second electrode. The second electrode is configured to sandwich the dielectric body with the first electrode so as to apply a voltage to the dielectric body. The second electrode includes orthogonal portions that are substantially orthogonal to an incident direction of a light beam passing through the dielectric body, parallel portions that are substantially parallel to the incident direction of the light beam. The orthogonal portions and the parallel portions are formed in an alternate manner on the light beam incident side of the dielectric body. The second electrode includes a linear sloping portion that slopes in a direction toward intersection with the incident direction of the light beam. The orthogonal portions, the parallel portions, and the linear sloping portion are formed integrally.Type: ApplicationFiled: December 26, 2012Publication date: October 3, 2013Inventors: Yuuzo Kamiguchi, Katsuya Sugawara, Masahiro Kanamaru, Keiichiro Yusu, Masatoshi Sakurai
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Publication number: 20130077459Abstract: In a recording and reproducing apparatus, an optical disc is rotated in a rotating direction and an optical system focuses a laser beam on the optical disc to form a beam spot on the optical disc. The optical system is provided with a scanner which deflects the laser beam along a radial direction of the optical disc in such a manner that the beam spot follows a first scan trajectory along a first direction crossing the rotating direction and a second scan trajectory along a second direction different from the first direction. A first data track with a sequence of recording pits along the first scan trajectory is formed and arranged on the optical disc.Type: ApplicationFiled: June 29, 2012Publication date: March 28, 2013Inventors: Yuuzo KAMIGUCHI, Masahiro KANAMARU, Katsuya SUGAWARA, Keiichiro YUSU, Masatoshi SAKURAI, Kazuki MATSUMOTO, Takehiro HIRAMATSU
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Patent number: 8169879Abstract: A multilayer optical recording system to record information with light includes a lens unit, a recording medium, and a microscopic drive unit. The lens unit includes a metamaterial lens or a plasmon lens. The metamaterial lens has a first dielectric member in which first microstructures are implanted in a substantially regular manner. The plasmon lens has an aperture. The aperture is a hole or a slit created in a metal film. The microscopic drive unit is configured to adjust a relative position between the lens unit and the recording medium. In addition, the principal plane is placed to be in contact with the lens unit or to have a gap between the principal plane and the lens unit. Furthermore, the second microstructures are arranged periodically in a direction substantially perpendicular to the principal plane of the recording medium.Type: GrantFiled: November 11, 2009Date of Patent: May 1, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Yuuzo Kamiguchi, Sumio Ashida
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Patent number: 7791843Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: GrantFiled: July 6, 2009Date of Patent: September 7, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda, Katsuhiko Koui, Masatoshi Yoshikawa, Hitoshi Iwasaki, Masashi Sahashi, Masayuki Takagishi
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Publication number: 20100124160Abstract: A multilayer optical recording system to record information with light includes a lens unit, a recording medium, and a microscopic drive unit. The lens unit includes a metamaterial lens or a plasmon lens. The metamaterial lens has a first dielectric member in which first microstructures are implanted in a substantially regular manner. The plasmon lens has an aperture. The aperture is a hole or a slit created in a metal film. The microscopic drive unit is configured to adjust a relative position between the lens unit and the recording medium. In addition, the principal plane is placed to be in contact with the lens unit or to have a gap between the principal plane and the lens unit. Furthermore, the second microstructures are arranged periodically in a direction substantially perpendicular to the principal plane of the recording medium.Type: ApplicationFiled: November 11, 2009Publication date: May 20, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuuzo KAMIGUCHI, Sumio Ashida
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Publication number: 20090269618Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: ApplicationFiled: July 6, 2009Publication date: October 29, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuuzo KAMIGUCHI, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda, Katsuhiko Koui, Masatoshi Yoshikawa, Hitoshi Iwasaki, Masashi Sahashi, Masayuki Takagishi
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Patent number: 7561383Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: GrantFiled: September 17, 2008Date of Patent: July 14, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda, Katsuhiko Koui, Masatoshi Yoshikawa, Hitoshi Iwasaki, Masashi Sahashi, Masayuki Takagishi
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Patent number: 7542248Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: GrantFiled: November 23, 2007Date of Patent: June 2, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda
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Patent number: 7515386Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: GrantFiled: March 27, 2006Date of Patent: April 7, 2009Assignee: Kabushiki Kaisa ToshibaInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda, Katsuhiko Koui, Masatoshi Yoshikawa, Hitoshi Iwasaki, Masashi Sahashi, Masayuki Takagishi
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Patent number: 7483245Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: GrantFiled: March 4, 2008Date of Patent: January 27, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda
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Publication number: 20090021869Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: ApplicationFiled: September 17, 2008Publication date: January 22, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuuzo KAMIGUCHI, Hiromi YUASA, Tomohiko NAGATA, Hiroaki YODA, Katsuhiko KOUI, Masatoshi YOSHIKAWA, Hitoshi IWASAKI, Masashi SAHASHI, Masayuki TAKAGISHI
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Publication number: 20080158737Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: ApplicationFiled: March 4, 2008Publication date: July 3, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuuzo KAMIGUCHI, Hiromi YUASA, Tomohiko NAGATA, Hiroaki YODA
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Publication number: 20080088981Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. Ina magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: ApplicationFiled: November 23, 2007Publication date: April 17, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda
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Patent number: 7359162Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: GrantFiled: October 22, 2004Date of Patent: April 15, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda