Abstract: Techniques are described to furnish a light sensor that includes a patterned IR interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR interference filter configured to block infrared light is disposed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors.

Abstract: A light sensor is described that includes an IR interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are disposed proximate to the surface of the substrate. An IR interference filter is disposed over the photodetectors. The IR interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photo detectors.

Abstract: A light sensor is described that includes an IR cut interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are formed in the substrate proximate to the surface of the substrate. An IR cut interference filter is disposed over the photodetectors. The IR cut interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR cut interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photodetectors.

Abstract: Techniques are described to furnish a light sensor that includes a patterned IR cut interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR cut interference filter configured to block infrared light is formed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR cut interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. In an implementation, a buffer layer is formed over the surface and configured to encapsulate the plurality of color pass filters to facilitate formation of the IR cut interference filter. In another implementation, the buffer layer is formed over the IR cut interference filter to function as a quasi-sacrificial buffer layer to facilitate formation of the color pass filters.

Abstract: The present invention discloses a method and a system for implementing domain selection during a terminated call, wherein, the method comprises: an application server (AS) sending, according to a received call request message, a query request message to a home subscriber server (HSS); the HSS querying, according to the query request message, a packet switching (PS) domain mobility management network element to obtain information of a called terminal and/or a network accessed by the called terminal in the call request message; the HSS feeding back the obtained information of the called terminal and/or the network accessed by the called terminal to the AS; and the AS selecting a domain to which a call message is to be routed according to the information of the called terminal and/or the network accessed by the called terminal.

Abstract: A method and a system for acquiring information of Machine Type Communication (MTC) user equipment (UE) are provided. The method comprises the steps of: an MTC GateWay (MTC GW) acquiring the information of the MTC UE which currently requests to attach to a network or has attached to a network from a mobility management network element; the MTC GW sending the information of the MTC UE acquired from the mobility management network element to an MTC Server. The method and the system can control the MTC UE in real time and intelligently.

Abstract: Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.

Abstract: Techniques are described to furnish a light sensor that includes a patterned IR cut interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR cut interference filter configured to block infrared light is formed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR cut interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. In an implementation, a buffer layer is formed over the surface and configured to encapsulate the plurality of color pass filters to facilitate formation of the IR cut interference filter. In another implementation, the buffer layer is formed over the IR cut interference filter to function as a quasi-sacrificial buffer layer to facilitate formation of the color pass filters.

Abstract: Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.

Abstract: A light sensor is described that includes an IR cut interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are formed in the substrate proximate to the surface of the substrate. An IR cut interference filter is disposed over the photodetectors. The IR cut interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR cut interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photo detectors.

Abstract: Light sensor devices are described that have a glass substrate, which includes a lens to focus light over a wide variety of angles, bonded to the light sensor device. In one or more implementations, the light sensor devices include a substrate having a photodetector formed therein. The photodetector is capable of detecting light and providing a signal in response thereto. The sensors also include one or more color filters disposed over the photodetector. The color filters are configured to pass light in a limited spectrum of wavelengths to the photodetector. A glass substrate is disposed over the substrate and includes a lens that is configured to collimate light incident on the lens and to pass the collimated light to the color filter.

Abstract: The present invention discloses a method and system for obtaining access information in a Multimedia Broadcast/Multicast Service (MBMS). The method includes the following steps: during an eMBMS session, a broadcast/multicast service center (BM-SC) configures access information in one or more MBMS session signaling, and sends the MBMS session signaling to an MBMS gateway within a service area of the BM-SC; wherein the access information at least includes radio access technology type information. The present invention also discloses a method and system for charging in an MBMS. The methods and systems of the present invention can take the access information including the radio access technology type as the basis of charging, supply communication operators with a charging manner of distinguishing radio access technology types, and adopt different rates corresponding to the MBMS service areas of different radio access technology types, and thus charging can be further detailed.

Abstract: The present invention discloses a method, system, and apparatus for controlling Circuit Switched, CS, fallback. The method comprises: a network element which got calling information of the present call in CS domain notifying a Mobility Management Entity, MME, of the calling information; the MME notifying the called User Equipment, UE, of the calling information; the called UE determining whether the call performs CS fallback according to whether the user answers the call or according to pre-configured CS fallback policy. By applying the present invention, the CS fallback of ongoing call can be controlled by the called user which is in EPS network, therefore the usability of the user's EPS network service is ensured, the satisfaction degree of the user is improved, and the useless occupancy of the GSM/UMTS network resources is reduced.

Abstract: Embodiments of the invention include a method for forming a copper interconnect having a bi-layer copper barrier layer. The method comprises the steps of providing a substrate with a low-K dielectric insulating layer and an opening in the insulating layer. A first barrier layer of tantalum/tantalum nitride is formed on the insulating layer and in the opening. A second barrier layer consisting of a material selected from the group of palladium, chromium, tantalum, magnesium, and molybdenum is formed on the first barrier layer. A copper seed layer is formed on the second barrier layer and implanted with barrier ions and a bulk copper layer is formed on the seed layer. The substrate is annealed and subject to further processing which can include planarization.

Abstract: An improvement to a method of forming an integrated circuit. An etch stop layer is formed to overlie the front end processing layers of the integrated circuit. Support structures are formed that are disposed so as to support electrically conductive interconnects on various levels of the integrated circuit. Substantially all of the non electrically conductive layers above the etch stop layer that were formed during the fabrication of the interconnects are removed.

Abstract: Embodiments of the invention include a method for forming a copper interconnect having a bi-layer copper barrier layer. The method comprises the steps of providing a substrate in a processing chamber, the substrate having a low-K dielectric insulating layer and an opening in the insulating layer. A first barrier layer of tantalum/tantalum nitride is formed on the insulating layer and in the opening. A second barrier layer is formed on the first barrier layer. The second barrier layer consisting of a material selected from the group of palladium, chromium, tantalum, magnesium, and molybdenum. A copper seed layer is formed on the second barrier layer and a bulk copper layer is formed on the seed layer. The substrate is annealed and subject to further processing which can include planarization. Other embodiments include providing a substrate in a processing chamber and forming a copper seed layer on the substrate.

Abstract: Methods for forming robust copper structures include steps for providing a substrate with an insulating layer with openings formed therein. At least two barrier layers are then formed followed by the deposition of a copper seed layer which is annealed. Bulk copper deposition of copper and planarization can follow. In one approach the seed layer is implanted with suitable materials forming an implanted seed layer upon which a bulk layer of conductive material is formed and annealed to form a final barrier layer. In another approach, a barrier layer is formed between two seed layers which forms a base for bulk copper deposition. Another method involves forming a first barrier layer and forming a copper seed layer thereon. The seed layer being implanted with a barrier material (e.g. palladium, chromium, tantalum, magnesium, and molybdenum or other suitable materials) and then bulk deposition of copper-containing material is performed followed by annealing.

Abstract: An improvement to a method of forming an integrated circuit. An etch stop layer is formed to overlie the front end processing layers of the integrated circuit. Support structures are formed that are disposed so as to support electrically conductive interconnects on various levels of the integrated circuit. Substantially all of the non electrically conductive layers above the etch stop layer that were formed during the fabrication of the interconnects are removed.

Abstract: An improvement to a method of fabricating an integrated circuit. All dielectric material that is laterally surrounding an electrically conductive interconnect is removed, while leaving the dielectric material that directly underlies the electrically conductive interconnect. The electrically conductive interconnect is back filled with a low k material, where the low k material provides low capacitance between laterally adjacent electrically conductive interconnects, and the remaining dielectric material underlying the electrically conductive interconnects provides structural support to the electrically conductive interconnects.

Abstract: An improvement to a method of forming an integrated circuit. An etch stop layer is formed to overlie the front end processing layers of the integrated circuit. Support structures are formed that are disposed so as to support electrically conductive interconnects on various levels of the integrated circuit. Substantially all of the non electrically conductive layers above the etch stop layer that were formed during the fabrication of the interconnects are removed.