Patents by Inventor Zhuang Li
Zhuang Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120094499Abstract: Methods of performing in situ chamber cleaning for etch chambers are described.Type: ApplicationFiled: April 14, 2011Publication date: April 19, 2012Inventors: Siu Tang Ng, Guowen Ding, Teh-Tien Su, Zhuang Li, Benjamin Schwarz, Benjamin Lee
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Publication number: 20110303639Abstract: Methods of processing metal hard masks are provided herein. In some embodiments, a method for processing a metal hard mask layer having a tri-layer resist disposed thereon is provided. A pattern is etched from a patterned photoresist layer into a second anti-reflective layer using a first plasma comprising chlorine. The pattern is etched into a first anti-reflective layer using a second plasma formed from a second process gas. The second anti-reflective layer is removed using a third plasma comprising chlorine (Cl2). The metal hard mask layer is etched using a fourth plasma comprising chlorine. The first anti-reflective layer is removed using a fifth plasma comprising oxygen (O2). In some embodiments, the process may be performed in a single process chamber. In some embodiments, the metal hard mask layer may be a titanium nitride (TiN) hard mask.Type: ApplicationFiled: January 27, 2011Publication date: December 15, 2011Applicant: APPLIED MATERIALS, INC.Inventors: HERRICK NG, GUOWEN DING, TEH-TIEN SUE, BENJAMIN SCHWARZ, ZHUANG LI
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Publication number: 20110306215Abstract: Methods of processing substrates having metal layers are provided herein. In some embodiments, a method of processing a substrate comprising a metal layer having a patterned mask layer disposed above the metal layer, the method may include etching the metal layer through the patterned mask layer; and removing the patterned mask layer using a first plasma formed from a first process gas comprising oxygen (O2) and a carbohydrate. In some embodiments, a two step method with an additional second process gas comprising chlorine (Cl2) or a sulfur (S) containing gas, may provide an efficient way to remove patterned mask residue.Type: ApplicationFiled: January 27, 2011Publication date: December 15, 2011Applicant: APPLIED MATERIALS, INC.Inventors: GUOWEN DING, HERRICK NG, TEH-TIEN SU, BENJAMIN SCHWARZ, ZHUANG LI
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Patent number: 7799698Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: June 5, 2006Date of Patent: September 21, 2010Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7691753Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: June 5, 2006Date of Patent: April 6, 2010Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Publication number: 20080102553Abstract: A process for passivating a carbon-based hard mask, for example, of hydrogenated amorphous carbon, overlying an oxide dielectric which is to be later etched according to the pattern of the hard mask. After the hard mask is photo lithographically etched, it is exposed to a plasma of a hydrogen-containing reducing gas, preferably hydrogen gas, and a fluorocarbon gas, preferably trifluoromethane. The substrate can then be exposed to air without the moisture condensing in the etched apertures of the hard mask.Type: ApplicationFiled: October 31, 2006Publication date: May 1, 2008Applicant: Applied Materials, Inc.Inventors: TAEHO SHIN, Ajey M. Joshi, Zhuang Li, Wei-Te Wu, Jin Chul Son, Jong Hun Choi
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Patent number: 7205240Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.Type: GrantFiled: June 4, 2003Date of Patent: April 17, 2007Assignee: Applied Materials, Inc.Inventors: M. Ziaul Karim, Bikram Kapoor, Anchuan Wang, Dong Qing Li, Katsunari Ozeki, Manoj Vellaikal, Zhuang Li
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Patent number: 7159597Abstract: A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.Type: GrantFiled: May 21, 2002Date of Patent: January 9, 2007Assignee: Applied Materials, Inc.Inventors: Zhong Qiang Hua, Zhengquan Tan, Zhuang Li, Kent Rossman
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Publication number: 20060286764Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: ApplicationFiled: June 5, 2006Publication date: December 21, 2006Applicant: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh Pham, Farhad Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Publication number: 20060228886Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: ApplicationFiled: June 5, 2006Publication date: October 12, 2006Applicant: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh Pham, Farhad Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7081414Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: May 23, 2003Date of Patent: July 25, 2006Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N Pham, Farhad K Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7064077Abstract: A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.Type: GrantFiled: October 1, 2004Date of Patent: June 20, 2006Assignee: Applied MaterialsInventors: Zhong Qiang Hua, Dong Qing Li, Zhengquan Tan, Zhuang Li, Michael Chiu Kwan, Bruno Geoffrion, Padmanabhan Krishnaraj
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Publication number: 20050260356Abstract: A film is deposited over a substrate by flowing a process gas to a process chamber and flowing a fluent gas to the process chamber. The process gas includes a silicon-containing gas and an oxygen-containing gas. The fluent gas includes a flow of helium and a flow of molecular hydrogen, the flow of molecular hydrogen being provided at a flow rate less than 20% of a flow rate of the helium. A plasma is formed in the process chamber with a density greater than 1011 ions/cm3. The film is deposited over the substrate with the plasma.Type: ApplicationFiled: May 18, 2004Publication date: November 24, 2005Applicant: APPLIED MATERIALS, INC.Inventors: Hemant Mungekar, Bikram Kapoor, Zhuang Li
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Publication number: 20050079715Abstract: A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.Type: ApplicationFiled: October 1, 2004Publication date: April 14, 2005Applicant: Applied Materials, Inc.Inventors: Zhong Hua, Dong Li, Zhengquan Tan, Zhuang Li, Michael Kwan, Bruno Geoffrion, Padmanabhan Krishnaraj
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Publication number: 20040245091Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.Type: ApplicationFiled: June 4, 2003Publication date: December 9, 2004Applicant: Applied Materials, Inc.Inventors: M Ziaul Karim, Bikram Kapoor, Anchuan Wang, DongQing Li, Katsunary Ozeki, Manoj Vellaikal, Zhuang Li
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Patent number: 6812153Abstract: A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.Type: GrantFiled: April 30, 2002Date of Patent: November 2, 2004Assignee: Applied Materials Inc.Inventors: Zhong Qiang Hua, Dong Qing Li, Zhengquan Tan, Zhuang Li, Michael Chiu Kwan, Bruno Geoffrion, Padmanabhan Krishnaraj
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Patent number: 6667248Abstract: A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.Type: GrantFiled: September 5, 2001Date of Patent: December 23, 2003Assignee: Applied Materials Inc.Inventors: Hichem M'Saad, Chad Peterson, Zhuang Li, Anchuan Wang, Farhad Moghadam
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Publication number: 20030203637Abstract: A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.Type: ApplicationFiled: April 30, 2002Publication date: October 30, 2003Applicant: Applied Materials, Inc.Inventors: Zhong Qiang Hua, Dong Qing Li, Zhengquan Tan, Zhuang Li, Michael Chiu Kwan, Bruno Geoffrion, Padmanabhan Krishnaraj
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Patent number: 6559052Abstract: Method and apparatus for depositing an amorphous silicon film on a substrate using a high density plasma chemical vapor deposition (HDP-CVD) technique is provided. The method generally comprises positioning a substrate in a processing chamber, introducing an inert gas into the processing chamber, introducing a silicon source gas into the processing chamber generating a high density plasma, and depositing the amorphous silicon film. The amorphous silicon film is deposited at a substrate temperature 500° C. or less. The amorphous silicon film may then be annealed to improve film properties.Type: GrantFiled: June 26, 2001Date of Patent: May 6, 2003Assignee: Applied Materials, Inc.Inventors: Zhuang Li, Kent Rossman, Tzuyuan Yiin
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Patent number: 6559026Abstract: A trench-fill material is deposited to fill a trench in a substrate disposed in a process chamber. An inert gas is introduced into the process chamber and a plasma is formed to heat the substrate to a preset temperature, which is typically the temperature at which deposition of the trench-fill material is to take place. The plasma is terminated upon reaching the preset temperature for the substrate. A process gas is then flowed into the process chamber without plasma excitation until the process gas flow and distribution achieve a generally steady state in the process chamber. A plasma is then formed to deposit the trench-fill material on the surface of the substrate and fill the trench. By establishing generally steady state conditions in the chamber prior to deposition, transient effects are reduced and more uniform deposition of the trench-fill material is obtained.Type: GrantFiled: May 25, 2000Date of Patent: May 6, 2003Assignee: Applied Materials, IncInventors: Kent Rossman, Zhuang Li, Young Lee