LIGHT EMITTING STRUCTURE WITH INTEGRAL REVERSE VOLTAGE PROTECTION

Abstract

A light emitting structure having reverse voltage protection (RVP) is provided along with disclosure of a method for fabricating the light emitting structure. The light emitting structure includes a substrate having a first face, a second face, and a p-n junction formed within the substrate between a p-type layer and an n-type layer, wherein the p-type layer and the n-type layer are adapted as a RVP diode. A buffer layer is provided on the substrate, and a light emitting diode (LED) is fabricated on the buffer layer. The LED is then electrically coupled to the RVP diode in an anti-parallel diode pair (APDP) configuration.

Description

RELATED APPLICATIONS

This application claims the benefit of provisional patent application Ser. No. 61/227,630, filed Jul. 22, 2009, the disclosure of which is hereby incorporated herein by reference in its entirety. The application also relates to provisional patent application Ser. No. 61/227,624, filed Jul. 22, 2009, and to utility patent application Ser. No. 12/705,869 filed Feb. 15, 2010, both of which are hereby incorporated herein by reference in their entireties.

FIELD OF THE DISCLOSURE

The present disclosure relates to a light emitting structure having a reverse voltage protection diode that is dimensionally efficient and inexpensive to manufacture.

BACKGROUND OF THE DISCLOSURE

Semiconductor structures such as light emitting diodes (LEDs) are susceptible to damage from accidental applications of reverse voltages. A reverse voltage condition can occur if an LED is inadvertently placed into a circuit backwards. For example, someone may accidentally couple a cathode of the LED to an anode pad of the circuit while coupling an anode of the LED to a cathode pad of the circuit. As a result, the LED will likely be damaged to a point of complete failure at the moment power is applied to the LED.

Moreover, LEDs are susceptible to electrostatic discharge (ESD). Triboelectric effects can lead to a large potential difference across an electrically insulating material. An ESD may occur if a large potential difference develops across a semiconductor device. A resultant short-duration high-current pulse flowing through the semiconductor device will likely damage the semiconductor device to a point of complete failure. LEDs are particularly vulnerable in that a reverse voltage resulting from an ESD of only a few volts of reverse bias potential difference is usually enough to damage an LED.

Prior art attempts to protect LEDs from accidental reverse voltage and/or ESD include coupling a cathode of an external diode to an anode of an LED to be protected along with coupling a cathode of the LED to an anode of the external diode. In this configuration, a potentially destructive current resulting from an accidental reverse voltage or ESD will harmlessly pass through the external diode while bypassing the LED being protected. While external diodes do a good job of protecting LEDs, there are disadvantages in using external diodes. One disadvantage is an increased manufacturing cost due to additional assembly processes that are needed to add an external diode to an LED. Another disadvantage is an undesirable increase in package size needed to accommodate the external diode. This disadvantage is especially evident when it is desirable to minimize the size of a reverse voltage protected LED. For example, an external diode used to protect an LED designed for a flip chip-type package would defeat the purpose of the flip chip-type package, which is to minimize the space taken up by the LED. Therefore, a need remains for an LED that preserves the smallest-size package intended for the LED while including a reverse voltage protection (RVP) diode that is relatively inexpensive to add to the LED.

SUMMARY OF THE DISCLOSURE

The present disclosure describes the use of standard silicon technology to fabricate a p-n junction into a substrate prior to fabricating a light emitting structure on top of the substrate. In this way, the p-n junction is integral with the light emitting structure and is usable to protect the light emitting structure from reverse voltage events such as accidental reverse voltage application and/or an electrostatic discharge (ESD). The combination of the p-n junction within the substrate of the light emitting structure forms a light emitting diode (LED) that is integral with a protective diode formed by the p-n junction. Since the protective diode is integrally formed with the light emitting structure, the protective diode is relatively inexpensive to add to the LED, while at the same time, it allows the manufacturer to preserve the smallest-size package intended for the LED.

In particular, the present disclosure provides a gallium nitride (GaN) LED that is reverse voltage protected and well suited for flip chip-type packaging. A process of manufacture for the GaN LED uses standard silicon manufacturing processes to fabricate a p-n junction into a substrate onto which the light emitting structure making up the GaN LED is grown. The p-n junction may be fabricated into the substrate prior to growing the light emitting structure of the GaN LED. The p-n junction can be formed by impurity diffusion or by ion implantation. A buffer layer for reducing strain between the substrate and the light emitting structure is formed on the substrate before the light emitting structure of the GaN LED is grown.

Fabrication of the light emitting structure of the GaN LED may be accomplished using standard semiconductor fabrication techniques. However, the formation of electrical contacts for the light emitting structure may include mesa or trench processing steps to access the doped material within the substrate.

Those skilled in the art will appreciate the scope of the present disclosure and realize additional aspects thereof after reading the following detailed description of the preferred embodiments in association with the accompanying drawing figures.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

The accompanying drawing figures incorporated in and forming a part of this specification illustrate several aspects of the disclosure, and together with the description serve to explain the principles of the disclosure.

FIG. 1A is a cross-section view of one embodiment of a light emitting structure according to the present disclosure.

FIG. 1B is a symbolic representation of a anti-parallel diode pair (APDP) that is realized in the light emitting structure of FIG. 1A.

FIG. 2 is a cross-section view of another embodiment of a light emitting structure, which includes grooves in the substrate for scattering light in accordance with the present disclosure.

FIG. 3 is a flowchart of a method of manufacture for a light emitting structure according to the present disclosure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the disclosure and illustrate the best mode of practicing the disclosure. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.

FIG. 1A provides a cross-section view of one embodiment of a light emitting structure 10 according to the present disclosure. The light emitting structure 10 includes a substrate 12 having a first face 14, a second face 16, and a p-n junction 18 formed from a first substrate layer 20 that is adjacent to a second substrate layer 22. In this particular embodiment, it is preferred that the substrate be made of silicon. The first substrate layer 20 and the second substrate layer 22 are adapted as a reverse voltage protection (RVP) diode 24 shown symbolically in FIG. 1B. As depicted in FIG. 1A, the first substrate layer 20 is made of p-type silicon and the second substrate layer 22 is made of n-type silicon. The p-n junction may be formed by bonding an n-type silicon wafer to a p-type silicon wafer. Alternately, the p-n junction may be formed by diffusing a p-type dopant into an n-type silicon layer of the substrate.

The first face 14 of the substrate 12 may have a preferred orientation of crystalline structure in order to minimize crystal lattice mismatches between the first face 14 of the substrate 12 and a layer that may be grown or deposited onto the first face 14 of the substrate 12. For example, the first face 14 of the substrate 12 may have a silicon (Si) crystal lattice that is preferably directed in a <111> plane in order to minimize the crystal lattice mismatch and hence mechanical strain between the substrate 12 and another layer deposited or grown on the first face 14. However, other planes of a Si crystal lattice may provide a nucleation needed to minimize the crystal lattice mismatch between the substrate and another layer deposited or grown on the first face 14.

A buffer layer 26 is provided on the substrate 12. The buffer layer 26 may be grown or deposited on the substrate 12. The buffer layer 26 may comprise sub-layers of aluminum nitride (AlN) and various compounds of aluminum gallium nitride (Al_xGa_1-xN), wherein x is greater than zero but less than or equal to one. Alternately, the substrate 12 may comprise AlN. Further still, the substrate 12 may be made of a plurality of layers of Al_xGa_1-xN (0<x≦1).

A first doped layer 28 is provided on the buffer layer 26. The first doped layer 28 may be deposited or grown on the buffer layer 26. Preferably the first doped layer 28 is made of n-type gallium nitride (GaN). A multiple quantum well (MQW) structure layer 30 is grown onto the first doped layer 28, and a second doped layer 32 is deposited onto the MQW structure layer 30. The first doped layer 28, the MQW structure layer 30, and the second doped layer 32 make up a light emitting diode (LED) 34 that is electrically coupled to the RVP diode 24 in an anti-parallel diode pair (APDP) configuration 36 as shown symbolically in FIG. 1B. The APDP configuration 36 of the present disclosure electrically couples the cathode of the RVP diode 24 to the anode of the LED 34 and also electrically couples the cathode of the LED 34 to the anode of the RVP diode 24. The RVP diode 24 acts as a reverse voltage protection device that electrically conducts a potentially damaging reverse voltage urged current to bypass the LED 34 if the reverse voltage across the LED 34 exceeds a predetermined voltage.

Turning attention back to FIG. 1A, a first electrical contact 38 is provided on the second doped layer 32, a second electrical contact 40 is provided on the first doped layer 28, a third electrical contact 42 is provided onto the first face 14 of the substrate 12, and a fourth electrical contact 44 is provided onto the second face 16 of the substrate 12. The APDP configuration 36 (FIG. 1B) is realized by electrically coupling the first electrical contact 38 to the fourth electrical contact 44 via a first conductor 46, and by electrically coupling the second electrical contact 40 to the third electrical contact 42 via a second conductor 48.

FIG. 2 depicts an alternate embodiment of the light emitting structure 10 of FIG. 1. In this embodiment, the substrate 12 includes a plurality of grooves 50 that are fabricated into the first face 14 of the substrate 12. The plurality of grooves 50 may be fabricated via etching the first face 14 of the substrate 12 using a wet chemistry etchant such as potassium hydroxide (KOH) or by mechanical etching. The first face 14 has a crystal lattice that is directed in the <100> plane and the each of the plurality of grooves 50 has sidewalls 52 that are formed within <111> planes. The preferred shape for the plurality of grooves 50 is a V, as shown in FIG. 2. However, other shapes for the plurality of grooves 50 are possible. Moreover, the first face 14 may have orientations other than the preferred <100> plane orientation. Further still, a minimum channel width of the each of the plurality of grooves 50 is two to ten times greater than a given wavelength of a light emission of the LED 34.

The plurality of grooves 50 scatters the light produced by the LED 34 with an efficiency that is significant enough to reduce a need for external reflective surfaces. Thus, the light emitting structure 10 is suitable for flip chip packaging. For example, as shown in FIG. 2, the light emitting structure 10 may be mounted on a flip chip-sized LED sub-mount 54. The LED sub-mount 54 preferably has a metalized and patterned surface that includes metal contacts 56.

FIG. 3 depicts a method of fabricating the light emitting structure 10 (FIGS. 1A and 2). An embodiment of the disclosure uses Si as a base material making up the substrate 12. The method may begin by providing the substrate 12 having the first face 14 and the second face 16, wherein the plurality of grooves 50 (FIG. 2) are etched into the first face 14 of the substrate 12 (step 100). Next, the p-n junction 18 is formed within the substrate 12 between the first substrate layer 20 and the second substrate layer 22 (step 102). The first substrate layer 20 and the second substrate layer 22 are adapted to be the RVP diode 24 (FIG. 1B). Various methods for forming the p-n junction 18 of the RVP diode 24 are known in the prior art. For example, a p-type dopant can be diffused into an n-type layer to produce the first substrate layer 20, and thus the p-n junction 18. Alternately, the first substrate layer 20 can be grown on the second substrate layer 22 (or vice versa). Further still, the p-n junction 18 can be formed by bonding an n-type wafer to a p-type wafer. Step 100 and step 102 may be exchanged, but it is generally preferable for the plurality of grooves 50 to be etched before the p-n junction 18 is formed.

Another step includes providing the buffer layer 26 onto the first face 14 of the substrate 12 (step 104). The buffer layer 26 may be grown or deposited on the substrate 12. The buffer layer 26 may comprise sub-layers of AlN and various compounds of Al_xGa_1-xN, wherein x is greater than zero but less than or equal to one. Alternately, the buffer layer 26 may comprise only AlN. Further still, the buffer layer 26 may be made of a plurality of layers made of Al_xGa_1-xN (0<x≦1).

Other steps include fabricating the LED 34 (FIG. 1B). The fabrication of the LED 34 begins by providing the first doped layer 28 on the buffer layer 26 (step 106). Preferably, the step 106 is accomplished by depositing or growing the first doped layer 28 on the buffer layer 26. It is also preferable for the first doped layer 28 to be made of n-type doped GaN.

In order to allow the light emitting structure to emit light efficiently, a step of fabricating the MQW structure layer 30 onto the first doped layer 28 is performed using standard MQW fabrication technology (step 108). Another step completes the LED 34 by providing the second doped layer 32 onto the MQW structure layer 30 (step 110). The step 110 providing the second doped layer 32 is preferably accomplished by depositing or growing p-type doped GaN onto the MQW structure layer 30.

Next, a series of steps are performed to make electrical connections between the RVP diode 24 and the LED 34. These steps may begin by providing the first electrical contact 38 on the second doped layer 32 (step 112). The first electrical contact 38 is preferably made of a material that is the same type as the second doped layer 32. For example, if the second doped layer 32 is made of n-type material, then the first electrical contact 38 should also be made of n-type material. A next step includes etching through the second doped layer 32 and the MQW structure layer 30 to expose a section of the first doped layer 28 (step 114). Another step involves providing the second electrical contact 40 onto the first doped layer 28 (step 116). Yet another step includes etching through the first doped layer 28 and the buffer layer 26 to expose a section of the first face 14 of the substrate 12 (step 118). A further step includes providing the third electrical contact 42 on the first face 14 of the substrate 12 (step 120). Another step involves providing the fourth electrical contact 44 onto the second face 16 of the substrate 12 (step 122).

Other steps involve making electrical connections such that the LED 34 and RVP diode 24 make up the APDP configuration 36. One of these steps involves coupling electrically the first electrical contact 38 to the fourth electrical contact 44 via the first conductor 46 (step 124). Another step includes coupling electrically the second electrical contact 40 to the third electrical contact 42 via the second conductor 48 (step 126).

Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.

Claims

1. A light emitting structure having reverse voltage protection (RVP), the light emitting structure comprising:

a substrate having a first face, a second face, and a p-n junction formed within the substrate between a p-type layer and an n-type layer, wherein the p-type layer and the n-type layer are adapted as a RVP diode;

a buffer layer provided on the substrate; and

a light emitting diode (LED) fabricated onto the buffer layer, wherein the LED is electrically coupled to the RVP diode in an anti-parallel diode pair (APDP) configuration.

2. The light emitting structure of claim 1 wherein the substrate comprises silicon (Si).

3. The light emitting structure of claim 1 wherein the LED comprises:

a first doped layer provided on the buffer layer;

a multiple quantum well (MQW) structure layer fabricated on the first doped layer; and

a second doped layer provided on the MQW structure layer.

4. The light emitting structure of claim 3 wherein the first doped layer is made of n-doped gallium nitride (GaN).

5. The light emitting structure of claim 3 wherein the second doped layer is made of p-doped GaN.

6. The light emitting structure of claim 1 wherein the buffer layer is deposited or grown on the first face of the substrate.

7. The light emitting structure of claim 1 wherein the buffer layer comprises sub-layers of aluminum nitride (AlN) and aluminum gallium nitride (AlxGa1-xN) (0<x≦1).

8. The light emitting structure of claim 1 wherein the buffer layer is made of AlN.

9. The light emitting structure of claim 1 wherein the buffer layer is made of AlxGa1-xN (0<x≦1).

10. The light emitting structure of claim 1 wherein the buffer layer comprises a plurality of layers made of AlxGa1-xN (0<x≦1).

11. The light emitting structure of claim 1 wherein the first face of the substrate is a <111> plane.

12. The light emitting structure of claim 1 wherein the first face of the substrate comprises a <100> plane having a plurality of grooves therein, wherein each of the plurality of grooves include sidewalls that are <111> planes.

13. The light emitting structure of claim 12 wherein a minimum channel width of the each of the plurality of grooves is two to ten times greater than a given wavelength of a light emission of the LED.

14. A method of fabricating a light emitting structure, the method comprising:

providing a silicon (Si) substrate having a first face, a second face, and a p-n junction formed within the substrate between a p-type layer and an n-type layer, wherein the p-type layer and the n-type layer are adapted as an RVP diode;

depositing or growing a buffer layer onto the first face of the substrate;

fabricating a LED via steps comprising: depositing or growing a first doped layer onto the buffer layer; fabricating an MQW structure layer on the first doped layer; depositing or growing a second doped layer onto the MQW structure layer;

providing a first electrical contact on the second doped layer;

etching through the second doped layer and the MQW structure layer to expose the first doped layer;

providing a second electrical contact on the first doped layer;

etching through the first doped layer and the buffer layer to expose the first face of the substrate;

providing a third electrical contact on the first face of the substrate;

providing a fourth electrical contact on the second face of the substrate; and

coupling electrically the first electrical contact to the fourth electrical contact and the second electrical contact to the third electrical contact such that the LED and RVP diode make up an APDP configuration.

15. The method of claim 14 wherein providing the substrate with the p-n junction comprises diffusing a p-type dopant into an n-type silicon (Si) layer of the substrate.

16. The method of claim 14 wherein providing the substrate with the p-n junction comprises bonding an n-type Si wafer to a p-type Si wafer.

17. The method of claim 14 further including producing a plurality of grooves in the first face of the substrate before depositing or growing the buffer layer onto the first face of the substrate.

18. The method of claim 17 wherein producing the plurality of grooves is accomplished via etching the first face of the substrate using a wet chemistry etchant.

19. The method of claim 18 wherein the wet chemistry etchant is potassium hydroxide (KOH).

20. The method of claim 17 wherein producing the plurality of grooves is accomplished via mechanical etching.

21. The method of claim 14 further including mounting the light emitting structure onto an LED sub-mount via adhering the fourth electrical contact of the light emitting structure to the LED sub-mount.