Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
By varying the spacing between a partially-reflective, partially-transmissive surface and a highly reflective surface positioned behind the partially-reflective, partially-transmissive surface, an interferometric modulator selectively creates constructive and/or destructive interference between light waves reflecting off the two surfaces. The spacing can be varied by applying a voltage to create electrostatic attraction between the two surfaces, which causes one or both surfaces to deform and move closer together. In the absence of such attraction, the surfaces are in a relaxed position, where they are farther apart from one another. A actuation voltage is needed to create sufficient electrostatic attraction to cause a surface to deform. The actuation voltage can be modified by implanting ions in a dielectric layer attached to one or both surfaces. Upon the application of a voltage, the ions create a baseline level of repulsion or attraction between the two surfaces, which thus require more or less voltage, respectively, to cause a surface to deform. The degree of ion implantation can be chosen to set the actuation voltage as desired, or the surfaces can be made to deform at a given voltage by appropriately selecting the degree of ion implantation.
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This application is a divisional of U.S. application Ser. No. 11/197,885, filed Aug. 5, 2005, which claims the priority benefit under 35 U.S.C. §119(e) of U.S. Provisional Application No. 60/613,451, filed Sep. 27, 2004.
This application is related to U.S. patent application Ser. No. 10/251,196, filed Sep. 20, 2002; and U.S. patent application Ser. No. 11/090,911, filed Mar. 25, 2005.
BACKGROUND1. Field of the Invention
This invention relates to microelectromechanical systems (MEMS) and, more particularly, to devices and methods for selectively creating constructive and/or destructive interference of light waves.
2. Description of the Related Technology
Microelectromechanical systems (MEMS) include micro mechanical elements, actuators, and electronics. Micromechanical elements may be created using deposition, etching, and or other micromachining processes that etch away parts of substrates and/or deposited material layers or that add layers to form electrical and electromechanical devices. One type of MEMS device is called an interferometric modulator. As used herein, the term interferometric modulator or interferometric light modulator refers to a device that selectively absorbs and/or reflects light using the principles of optical interference. In certain embodiments, an interferometric modulator may comprise a pair of conductive plates, one or both of which may be transparent and/or reflective in whole or part and capable of relative motion upon application of an appropriate electrical signal. In a particular embodiment, one plate may comprise a stationary layer deposited on a substrate and the other plate may comprise a metallic membrane separated from the stationary layer by an air gap. As described herein in more detail, the position of one plate in relation to another can change the optical interference of light incident on the interferometric modulator. Such devices have a wide range of applications, and it would be beneficial in the art to utilize and/or modify the characteristics of these types of devices so that their features can be exploited in improving existing products and creating new products that have not yet been developed.
SUMMARY OF CERTAIN EMBODIMENTSIn accordance with one aspect of the invention, a microelectromechanical system is provided. The microelectromechanical system comprises a conductor layer, a mechanical layer and a charged layer. The mechanical layer is separated by a cavity from the conductor layer and is configured to move relative to the conductor layer. The charged layer comprises an incorporated charged species and is disposed between the conductor layer and the mechanical layer.
In accordance with another aspect of the invention, a method is provided for modulating electromagnetic radiation. The method comprises providing a plurality of micromechanical devices. Each device comprises a conductor layer, a reflective layer and a charged layer between the conductor layer and the reflective layer. The charged layer has an incorporated charged species. The reflective layer is parallel to and spaced a distance from the conductor layer while in a relaxed state. The distance for some of the micromechanical devices is different from other of the micromechanical devices. The reflective layer is configured to move relative to the conductor layer upon being switched to an actuated state. A voltage is applied to the conductor layers and the reflective layers of the micromechanical devices to actuate the micromechanical devices.
In accordance with yet another aspect of the invention, a method is provided for fabricating a micromechanical device. The method comprises forming a first conductive layer, forming a dielectric layer over the first conductive layer, adding charge to the dielectric layer and forming a second conductive layer over the dielectric layer. In another aspect, the invention provides a micromechanical device formed by this method.
In accordance with another aspect of the invention, an interferometric modulator is provided. The modulator comprises a conductor layer, a movable layer and a means for modifying a voltage actuation threshold of the movable layer with charged species.
As discussed in greater detail below, interferometric modulators can be switched between a bright and a dark state by moving a reflective part (the “reflective layer”) relative to a partly-transmissive and partly-reflective part (the “optical stack”), which is spaced from the reflective layer. The movement is actuated by creating electrostatic attraction between the two parts, which causes at least one of the parts to move relative to the other part. In an actuated position, one of the parts has a net positive charge, while the other part has a net negative charge, thereby causing the parts to be drawn close together. In a relaxed position, the net charge between the parts is not sufficient to overcome the mechanical resistance of the parts to movement, and the parts are spaced relatively far apart. The voltage needed to generate sufficient electrostatic attraction to draw the parts into the actuated position may be referred to as the actuation voltage.
According to some preferred embodiments, the actuation voltage can be altered by incorporating positively and/or negatively charged species, such as ions, into the reflective layer and/or the optical stack. The reflective layer and/or the optical stack are preferably provided with a dielectric layer, situated between the reflective layer and the optical stack, into which the charged species can be embedded. The charged species create a constant, baseline level of charge, which augment and/or cancel part of the electrostatic attraction that is generated when applying a voltage to the optical stack and the reflective layer. As a result, a higher or lower actuation voltage may be needed to generate the net level of electrostatic attraction necessary to, e.g., cause the reflective layer to move to an actuated position. For example, if the reflective layer and the optical stack are wired so as to have a positive and a negative charge, respectively, then the actuation voltage can be increased by implanting positively charged ions, which can repel the positively charged reflective layer. Conversely, the actuation voltage can be decreased by implanting negatively charged ions, which help to attract the positively charged reflective layer. Thus, the incorporation of the charged species can be used to alter the actuation voltage as desired.
It will also be appreciated that, as discussed further below, the interferometric modulators exhibit a hysteresis behavior in which they remain in a particular state over a range of applied voltages. This range of applied voltages is referred to as the “hysteresis window.” For example, the interferometric modulator remains stable in the relaxed position until the applied voltage is increased to the actuation voltage, when it switches to the actuated position. The interferometric modulator then remains stable in the actuated state until the applied voltage drops below a certain voltage. Pre-charging, e.g., by ion implantation preferably leaves the hysteresis window substantially unchanged and shifts the window with the actuation voltage. Advantageously, this shifting allows the windows to be centered as desired, allowing for the simplification of driver and control systems, as discussed below.
The following detailed description is directed to certain specific embodiments of the invention. However, the invention can be embodied in a multitude of different ways. In this description, reference is made to the drawings wherein like parts are designated with like numerals throughout. As will be apparent from the following description, the embodiments may be implemented in any device that is configured to display an image, whether in motion (e.g., video) or stationary (e.g., still image), and whether textual or pictorial. More particularly, it is contemplated that the embodiments may be implemented in or associated with a variety of electronic devices such as, but not limited to, mobile telephones, wireless devices, personal data assistants (PDAs), hand-held or portable computers, GPS receivers/navigators, cameras, MP3 players, camcorders, game consoles, wrist watches, clocks, calculators, television monitors, flat panel displays, computer monitors, auto displays (e.g., odometer display, etc.), cockpit controls and/or displays, display of camera views (e.g., display of a rear view camera in a vehicle), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., display of images on a piece of jewelry). MEMS devices of similar structure to those described herein can also be used in non-display applications such as in electronic switching devices.
One interferometric modulator display embodiment comprising an interferometric MEMS display element is illustrated in
The depicted portion of the pixel array in
The optical stacks 16a and 16b (collectively referred to as optical stack 16), as referenced herein, typically comprise of several fused layers, which can include an electrode layer, such as indium tin oxide (ITO), a partially reflective layer, such as chromium, and a transparent dielectric. The optical stack 16 is thus electrically conductive, partially transparent and partially reflective, and may be fabricated, for example, by depositing one or more of the above layers onto a transparent substrate 20. In some embodiments, the layers are patterned into parallel strips, and may form row electrodes in a display device as described further below. The movable reflective layers 14a, 14b may be formed as a series of parallel strips of a deposited metal layer or layers (orthogonal to the row electrodes of 16a, 16b) deposited on top of posts 18 and an intervening sacrificial material deposited between the posts 18. When the sacrificial material is etched away, the movable reflective layers 14a, 14b are separated from the optical stacks 16a, 16b by a defined gap 19. A highly conductive and reflective material, such as aluminum, may be used for the reflective layers 14, and these strips may form column electrodes in a display device.
With no applied voltage, the cavity 19 remains between the movable reflective layer 14a and optical stack 16a, with the movable reflective layer 14a in a mechanically relaxed state, as illustrated by the pixel 12a in
In one embodiment, the processor 21 is also configured to communicate with an array driver 22. In one embodiment, the array driver 22 includes a row driver circuit 24 and a column driver circuit 26 that provide signals to a panel or display array (display) 30. The cross section of the array illustrated in
In typical applications, a display frame may be created by asserting the set of column electrodes in accordance with the desired set of actuated pixels in the first row. A row pulse is then applied to the row 1 electrode, actuating the pixels corresponding to the asserted column lines. The asserted set of column electrodes is then changed to correspond to the desired set of actuated pixels in the second row. A pulse is then applied to the row 2 electrode, actuating the appropriate pixels in row 2 in accordance with the asserted column electrodes. The row 1 pixels are unaffected by the row 2 pulse, and remain in the state they were set to during the row 1 pulse. This may be repeated for the entire series of rows in a sequential fashion to produce the frame. Generally, the frames are refreshed and/or updated with new display data by continually repeating this process at some desired number of frames per second. A wide variety of protocols for driving row and column electrodes of pixel arrays to produce display frames are also well known and may be used in conjunction with the present invention.
In the
The display device 40 includes a housing 41, a display 30, an antenna 43, a speaker 45, a microphone 46, and an input device 48. The housing 41 is generally formed from any of a variety of manufacturing processes as are well known to those of skill in the art, including injection molding, and vacuum forming. In addition, the housing 41 may be made from any of a variety of materials, including but not limited to plastic, metal, glass, rubber, and ceramic, or a combination thereof. In one embodiment the housing 41 includes removable portions (not shown) that may be interchanged with other removable portions of different color, or containing different logos, pictures, or symbols.
The display 30 of exemplary display device 40 may be any of a variety of displays, including a bi-stable display, as described herein. In other embodiments, the display 30 includes a flat-panel display, such as plasma, EL, OLED, STN LCD, or TFT LCD as described above, or a non-flat-panel display, such as a CRT or other tube device, as is well known to those of skill in the art. However, for purposes of describing the present embodiment, the display 30 includes an interferometric modulator display, as described herein.
The components of one embodiment of exemplary display device 40 are schematically illustrated in
The network interface 27 includes the antenna 43 and the transceiver 47 so that the exemplary display device 40 can communicate with one or more devices over a network. In one embodiment the network interface 27 may also have some processing capabilities to relieve requirements of the processor 21. The antenna 43 is any antenna known to those of skill in the art for transmitting and receiving signals. In one embodiment, the antenna transmits and receives RF signals according to the IEEE 802.11 standard, including IEEE 802.11(a), (b), or (g). In another embodiment, the antenna transmits and receives RF signals according to the BLUETOOTH standard. In the case of a cellular telephone, the antenna is designed to receive CDMA, GSM, AMPS or other known signals that are used to communicate within a wireless cell phone network. The transceiver 47 pre-processes the signals received from the antenna 43 so that they may be received by and further manipulated by the processor 21. The transceiver 47 also processes signals received from the processor 21 so that they may be transmitted from the exemplary display device 40 via the antenna 43.
In an alternative embodiment, the transceiver 47 can be replaced by a receiver. In yet another alternative embodiment, network interface 27 can be replaced by an image source, which can store or generate image data to be sent to the processor 21. For example, the image source can be a digital video disc (DVD) or a hard-disc drive that contains image data, or a software module that generates image data.
The processor 21 generally controls the overall operation of the exemplary display device 40. The processor 21 receives data, such as compressed image data from the network interface 27 or an image source, and processes the data into raw image data or into a format that is readily processed into raw image data. The processor 21 then sends the processed data to the driver controller 29 or to frame buffer 28 for storage. Raw data typically refers to the information that identifies the image characteristics at each location within an image. For example, such image characteristics can include color, saturation, and gray-scale level.
In one embodiment, the processor 21 includes a microcontroller, CPU, or logic unit to control operation of the exemplary display device 40. Conditioning hardware 52 generally includes amplifiers and filters for transmitting signals to the speaker 45, and for receiving signals from the microphone 46. Conditioning hardware 52 may be discrete components within the exemplary display device 40, or may be incorporated within the processor 21 or other components.
The driver controller 29 takes the raw image data generated by the processor 21 either directly from the processor 21 or from the frame buffer 28 and reformats the raw image data appropriately for high speed transmission to the array driver 22. Specifically, the driver controller 29 reformats the raw image data into a data flow having a raster-like format, such that it has a time order suitable for scanning across the display array 30. Then the driver controller 29 sends the formatted information to the array driver 22. Although a driver controller 29, such as a LCD controller, is often associated with the system processor 21 as a stand-alone Integrated Circuit (IC), such controllers may be implemented in many ways. They may be embedded in the processor 21 as hardware, embedded in the processor 21 as software, or fully integrated in hardware with the array driver 22.
Typically, the array driver 22 receives the formatted information from the driver controller 29 and reformats the video data into a parallel set of waveforms that are applied many times per second to the hundreds and sometimes thousands of leads coming from the display's x-y matrix of pixels.
In one embodiment, the driver controller 29, array driver 22, and display array 30 are appropriate for any of the types of displays described herein. For example, in one embodiment, the driver controller 29 is a conventional display controller or a bi-stable display controller (e.g., an interferometric modulator controller). In another embodiment, the array driver 22 is a conventional driver or a bi-stable display driver (e.g., an interferometric modulator display). In one embodiment, the driver controller 29 is integrated with the array driver 22. Such an embodiment is common in highly integrated systems such as cellular phones, watches, and other small area displays. In yet another embodiment, the display array 30 is a typical display array or a bi-stable display array (e.g., a display including an array of interferometric modulators).
The input device 48 allows a user to control the operation of the exemplary display device 40. In one embodiment, input device 48 includes a keypad, such as a QWERTY keyboard or a telephone keypad, a button, a switch, a touch-sensitive screen, a pressure- or heat-sensitive membrane. In one embodiment, the microphone 46 is an input device for the exemplary display device 40. When the microphone 46 is used to input data to the device, voice commands may be provided by a user for controlling operations of the exemplary display device 40.
The power supply 50 can include a variety of energy storage devices as are well known in the art. For example, in one embodiment, the power supply 50 is a rechargeable battery, such as a nickel-cadmium battery or a lithium ion battery. In another embodiment, power supply 50 is a renewable energy source, a capacitor, or a solar cell, including a plastic solar cell, and solar-cell paint. In another embodiment, the power supply 50 is configured to receive power from a wall outlet.
In some implementations control programmability resides, as described above, in a driver controller which can be located in several places in the electronic display system. In some cases control programmability resides in the array driver 22. Those of skill in the art will recognize that the above-described optimization may be implemented in any number of hardware and/or software components and in various configurations.
The details of the structure of interferometric modulators that operate in accordance with the principles set forth above may vary widely. For example,
In embodiments such as those shown in
With reference to
Support posts 18 are provided to support the movable, reflective layer, or mechanical/mirror element, 14 a predetermined distance (in the relaxed mode) above the dielectric layer 102. The support posts 18 are preferably formed of a stable material with sufficient structural integrity to support the movable reflective layer 14. For example, the support posts 18 can be fabricated from an organic material, such as photoresist, or from spin-on glass. The movable layer 14 is preferably formed of a flexible, conductive and highly reflective material, for example, a metal such as aluminum, nickel, chromium or combinations or alloys thereof.
With continued reference to
It will be appreciated that the ions can be disposed in various other positions in the interferometric modulator 12. To prevent the dissipation of charge from the ions, the ions are preferably embedded within a non-conducting material, such as a dielectric, or are surrounded by or embedded within in a material surrounded by an insulator.
With reference to
Along with changes in the actuation voltage, the introduction of charged ions between the movable layer 14 and the fixed layer 16 can shift the optical response curves of the modulators 12. For example, the optical response curves of
It will be appreciated that interferometric modulators can be formed with a hysteresis curve centered away from the zero voltage line. For example, the interferometric modulators can be formed having a particular level of charge between the layers 14 and 16, even without ion implantation. For example, structural defects or structural modifications in the dielectric layer 102 can result in such a charge. As a result of this charge, the hysteresis window for these interferometric modulators may not be centered relative to the zero voltage line. Moreover, different interferometric modulators may exhibit a different level of charge. The charges and the different levels of charges may adversely affect the behavior of the interferometric modulators by reducing predictability and control over the actuation and release of the movable layers of the interferometric modulators. Advantageously, depending upon the charge already present, ion implantation can allow the hysteresis behavior of the interferometric modulators to be re-centered about the zero voltage line by, e.g., neutralizing the already present charge. As a result, predictability and control over the actuation and release of the movable layers of the interferometric modulators can be increased.
While discussed above with reference to incorporated charged species in the dielectric layer 102, it will be appreciated that similar affects can be achieved by incorporation of charged species in the layer 106 (when present, as illustrated in
Moreover, both the layers 102 and 106 can be provided in an interferometric modulator and each can be incorporated with charged species. For example, with the movable layer 14 and the fixed layer 16 again configured to be positively and negatively charged, respectively, an effect similar to that illustrated in
It will be appreciated that the effect of the incorporation of the charged species can be reversed by reversing the polarities of the layers 102 and 106. For example, if a certain arrangement of charged species shifts the hysteresis curves to the left when the movable layer 14 and the fixed layer 16 are connected to a voltage source to generate positive and negative charges, respectively, in those layers, the same arrangement of charged species will shift the hysteresis curves to the right if the voltage source is connected to the layers 102 and 106 in reverse, i.e., so that the polarities in those layers is reversed.
With reference to
Such a situation is illustrated in
For example, in the arrangement shown in
With reference to
While various process steps are illustrated as separate blocks in
With continued reference to
With reference to
It will be appreciated that the ion implantation can disrupt the structure of the dielectric. As a result, the ion implantation can be followed by an anneal to reorient the dielectric structure, to improve the optical characteristics of the implanted dielectric and to more evenly distribute the ions within the dielectric.
It will be appreciated that, in some embodiments, no photoresist is needed and the step 407 can be omitted if all interferometric modulators 12 are to be uniformly implanted with the same ion or ions. In other embodiments, the patterned photoresist allows interferometric modulators 12 to be selectively implanted with ions, thereby allowing different ions to be implanted or different levels of implantation to be achieved. It will be appreciated that multiple photoresist depositions and/or patterning steps can be used to selectively implant a plurality of different ions or to selectively implant different quantities of ions. For example, the photoresist can be deposited and patterned to implant ions in some particular interferometric modulators 12, additional photoresist can be deposited and patterned to implant ions in other interferometric modulators 12, and so on. After the ion implantation, the photoresist is preferably removed.
Moreover, the charge incorporation can occur at a later step than that illustrated. For example, the ion implantation can be performed after deposition 410 of a non-metal sacrificial layer (e.g., silicon), discussed below, and preferably before the formation of additional metal layers.
In step 410, a sacrificial layer (which will later be removed to form the optical cavity of the interferometric modulator 12) is deposited. The sacrificial layer is formed of a solid material that can later be removed, e.g., by etching, without disrupting the other materials of the interferometric modulator 12. An example of a preferred material for the sacrificial layer is molybdenum. Other suitable sacrificial materials include silicon and tungsten, which advantageously can also be selectively or preferentially removed using XeF2 without etching aluminum or silicon oxide. The sacrificial layer is patterned and etched 412 to provide voids into which materials to form the support posts 18 will be deposited. In step 414, the post material is deposited, thereby forming the support posts 18. The post material can be, e.g., photoresist or some other organic compound or spin on glass. In step 416, a mechanical/mirror film is deposited. As noted above, the film can be made of, e.g., aluminum or other flexible metals. In step 418, the mechanical film is patterned and etched to form the mechanical/mirror layer 14. The sacrificial layer is then removed 420.
Interferometric modulators according to the preferred embodiments offer numerous advantages. For example, charge incorporation allows the actuation voltage and/or hysteresis curve for a particular interferometric modulator to be shifted as desired. As a result, it is possible to reduce the voltages required to drive the interferometric modulators, thereby lowering the power requirements and power consumption of displayers utilizing the interferometric modulators. In addition, hysteresis curves can be shifted by charge incorporation to center the curves about the zero voltage line. This can be achieved, for example, by neutralizing charges that may form in the dielectric layer of between the conductive layers of the interferometric modulators. Centering the hysteresis curves can make control over the states of the interferometric modulators more predictable, e.g., by setting the actuation voltages at expected values. Moreover, in cases in which multiple interferometric modulators, each naturally having a different actuation voltage and shifted hysteresis curves, are present, some or all of the interferometric modulators can be doped so that the hysteresis curves substantially overlap. As a result, the actuation voltages and the release voltages of each of the interferometric modulators overlap, thereby reducing the number of different voltages that is generated to control the interferometric modulators. Thus, the driver and control systems can be simplified.
While the charged species are discussed above as “implanted ions,” it will be appreciated that the charged species can be any charged species incorporated in a material disposed between the movable conductive layer and the fixed conductive layer. In other embodiments, the charged species can simply be deposited on a dielectric substrate and preferably has a charge as deposited. The dielectric layer, while preferably disposed on a conductive layer for simplicity of fabrication and structure, can be spaced from the conductive layers. Moreover, while discussed as having one movable and one fixed conductive layer for ease of description and illustration, in some embodiments, the positions of the movable and fixed layers can be reversed from that illustrated, or both layers can be made to move.
Accordingly, it will be appreciated by those skilled in the art that various other omissions, additions and modifications may be made to the methods and structures described above without departing from the scope of the invention. All such modifications and changes are intended to fall within the scope of the invention, as defined by the appended claims.
Claims
1. A method for fabricating an interferometric light modulating device, comprising:
- forming a conductive reflective layer;
- forming a dielectric layer over the reflective layer;
- adding a charged species to the dielectric layer; and
- subsequently forming a conductive partly-transmissive and partly-reflective layer over the dielectric layer.
2. A method for fabricating an interferometric light modulating device, comprising:
- forming a conductive reflective layer;
- forming a dielectric layer over the reflective layer;
- adding a charged species to the dielectric layer, wherein adding the charged species comprises performing an ion implantation after forming the dielectric layer; and
- forming a conductive partly-transmissive and partly-reflective layer over the dielectric layer.
3. The method of claim 2, further comprising annealing the dielectric layer after adding the charged species.
4. The method of claim 1, wherein adding charge comprises directing ions to the dielectric as the dielectric is formed.
5. The method of claim 4, wherein adding the charged species comprises simultaneously sputtering an ion precursor and one or more dielectric precursors.
6. A method for fabricating an interferometric light modulating device, comprising:
- forming a conductive reflective layer;
- forming a dielectric layer over the reflective layer;
- adding a charged species to the dielectric layer, wherein adding the charged species comprises doping the dielectric layer; and
- forming a conductive partly-transmissive and partly-reflective layer over the dielectric layer.
7. The method of claim 6, wherein doping the dielectric layer comprises diffusing dopants into the dielectrtic layer.
8. The method of claim 6, wherein the charge is provided by implanting ions chosen from the group consisting of potassium and phosphorous ions.
9. The method of claim 6, wherein the charge is provided by implanting ions chosen from the group consisting of sodium ions and lithium ions.
10. The method of claim 1, wherein forming the reflective layer comprises depositing a layer of chromium and/or indium-tin-oxide.
11. A method for fabricating an interferometric light modulating device, comprising:
- forming a conductive reflective layer;
- forming a dielectric layer over the reflective layer, wherein forming the dielectric layer comprises depositing an oxide;
- adding a charged species to the dielectric layer; and
- forming a conductive partly-transmissive and partly-reflective layer over the dielectric layer.
12. The method of claim 11, wherein the oxide is chosen from the group consisting of aluminum oxide and/or silicon oxide.
13. The method of claim 11, further comprising depositing a layer of a sacrificial material over the dielectric layer and subsequently forming the partly-transmissive and partly-reflective layer.
14. The method of claim 13, wherein forming the partly-transmissive and partly-reflective layer comprises depositing a metallic layer over the sacrificial material.
15. The method of claim 14, further comprising preferentially removing the sacrificial material.
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Type: Grant
Filed: Feb 7, 2008
Date of Patent: Feb 9, 2010
Patent Publication Number: 20080144163
Assignee: QUALCOMM MEMS Technologies, Inc. (San Diego, CA)
Inventor: Philip D. Floyd (Redwood City, CA)
Primary Examiner: Timothy J Thompson
Attorney: Knobbe, Martens, Olson & Bear, LLP
Application Number: 12/027,862
International Classification: G02B 26/00 (20060101);