Inner tube of reactor for semiconductor fabrication
Latest KOKUSAI ELECTRIC CORPORATION Patents:
- METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, GAS SUPPLY METHOD, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
- COATING METHOD, PROCESSING APPARATUS, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM, SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and recording medium
- Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
- SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
Description
Claims
The ornamental design for an inner tube of reactor for semiconductor fabrication, as shown and described.
Referenced Cited
U.S. Patent Documents
Foreign Patent Documents
4950870 | August 21, 1990 | Mitsuhashi |
5618349 | April 8, 1997 | Yuuki |
D404368 | January 19, 1999 | Shimazu |
D405062 | February 2, 1999 | Shimazu |
D405429 | February 9, 1999 | Hanagata |
D405431 | February 9, 1999 | Shimazu |
D406113 | February 23, 1999 | Hanagata |
5948300 | September 7, 1999 | Gero |
5968593 | October 19, 1999 | Sakamoto |
D417438 | December 7, 1999 | Matsushima |
D423463 | April 25, 2000 | Hanagata |
D424024 | May 2, 2000 | Hanagata |
6251189 | June 26, 2001 | Odake |
6402849 | June 11, 2002 | Kwag |
D521464 | May 23, 2006 | Ishii |
D521465 | May 23, 2006 | Ishii |
7311520 | December 25, 2007 | Saito |
D586768 | February 17, 2009 | Inoue |
D600659 | September 22, 2009 | Matsuura |
D610559 | February 23, 2010 | Okada |
D611013 | March 2, 2010 | Takahashi |
D618638 | June 29, 2010 | Nakashima |
D711843 | August 26, 2014 | Yamazaki |
D719114 | December 9, 2014 | Yamazaki |
D724551 | March 17, 2015 | Kaneko |
D725055 | March 24, 2015 | Yamazaki |
D739832 | September 29, 2015 | Yamazaki |
D770993 | November 8, 2016 | Yoshida |
D772824 | November 29, 2016 | Yoshida |
D791090 | July 4, 2017 | Yoshida |
D800080 | October 17, 2017 | Nagata |
D842823 | March 12, 2019 | Okajima et al. |
D842824 | March 12, 2019 | Sato |
D853979 | July 16, 2019 | Kagaya |
20030221779 | December 4, 2003 | Okuda |
20070098605 | May 3, 2007 | Johns |
20080083372 | April 10, 2008 | Inoue |
20090194521 | August 6, 2009 | Kobayashi |
20090250005 | October 8, 2009 | Kaneko |
305023016 | February 2019 | CN |
Patent History
Patent number: D901406
Type: Grant
Filed: Sep 9, 2019
Date of Patent: Nov 10, 2020
Assignee: KOKUSAI ELECTRIC CORPORATION (Tokyo)
Inventors: Toru Kagaya (Toyama), Atsushi Umekawa (Toyama)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/705,011
Type: Grant
Filed: Sep 9, 2019
Date of Patent: Nov 10, 2020
Assignee: KOKUSAI ELECTRIC CORPORATION (Tokyo)
Inventors: Toru Kagaya (Toyama), Atsushi Umekawa (Toyama)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/705,011
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)