Semiconductor device

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Description

FIG. 1 is a front view of the semiconductor device, showing my new design;

FIG. 2 is a rear view thereof;

FIG. 3 is a right-side view thereof;

FIG. 4 is a left-side view thereof;

FIG. 5 is a top view thereof;

FIG. 6 is a bottom view thereof;

FIG. 7 is a front top right side perspective view thereof;

FIG. 8 is a rear bottom left side perspective view thereof;

FIG. 9 is a front top left side perspective view thereof; and,

FIG. 10 is a rear bottom right side perspective view thereof.

The broken lines in the drawings illustrate portions of the semiconductor device that form no part of the claimed design.

Claims

The ornamental design for a semiconductor device, as shown and described.

Referenced Cited
U.S. Patent Documents
D587662 March 3, 2009 Soutome
D706232 June 3, 2014 Nakamura
D710319 August 5, 2014 Chen
9078355 July 7, 2015 Kodaira
9167699 October 20, 2015 Takamiya
9312192 April 12, 2016 Horio
9504154 November 22, 2016 Tada
9673129 June 6, 2017 Hori
9831152 November 28, 2017 Shigeta
10297533 May 21, 2019 Kodaira
10777473 September 15, 2020 Kodaira
10784214 September 22, 2020 Soyano
Other references
  • Sanrex-Sansha Electric Manufacturing Hybrid SCR-Diode Power Modules, PD Series, dated Oct. 20, 2013 [online], [site visited: Nov. 22, 2021 ]. Available from Internet, URL: https://www.galco.com/buy/Sanrex-Sansha-Electric-Manufacturing/PD160F160 (Year: 2013).
Patent History
Patent number: D949808
Type: Grant
Filed: Nov 27, 2020
Date of Patent: Apr 26, 2022
Assignee: SANSHA ELECTRIC MANUFACTURING CO., LTD. (Osaka)
Inventor: Kotaro Maeda (Osaka)
Primary Examiner: Shawn T Gingrich
Assistant Examiner: Anton Dennis Murray
Application Number: 29/760,010