Abstract: The invention relates to an improved hide-curing additive comprising an effective biocidal amount of an essential oil and a non-ionic surfactant. The improved additive provides an effective cure for the hides, is environmentally safe and economical.

Abstract: A polymer liquid crystal emulsion includes a liquid crystal and a water soluble copolymer obtained by polymerizing a hydrophilic monomer with one or more hydrophobic monomers. The concentration of the hydrophobic monomer may be 14 to 25% by weight based on the combined weight of the hydrophobic monomer and the hydrophilic monomer. The hydrophobic monomer may be styrene, methyl methacrylate, vinyl acetate, acrylate or methacrylate. The hydrophilic monomer may be acrylamide, acrylonitrile or acryloylchloride. Preferably, the hydrophilic monomer is acrylamide or a derivative thereof and the hydrophobic monomer is styrene, methyl methacrylate or vinyl acetate. The liquid crystal may be a nematic liquid crystal formed of an azomethine compound or an azo compound. The water soluble copolymer, the liquid crystal and water may form a liquid crystal/aqueous polymer solution. In this case, the concentration of the liquid crystal in the liquid crystal/aqueous polymer solution is in the range of 50 to 70% by weight.

Abstract: An electrically conductive paste which ensures formation of a dense electrode film even in a low-oxygen-concentration atmosphere without strict control of the atmosphere is described. The electrically conductive paste comprising Cu powder, glass frit and an organic binder resin, wherein the glass frit comprises Zn- and Cu-containing borosilicate glass and in the melt state has a contact angle with respect to Cu of 90° or less as measured in a nitrogen atmosphere.

Abstract: In a process for producing a thin-film device, a conducting layer composed of an anodically oxidizable metal is formed on a substrate and is etched to form gate bus lines and gate electrode having upper surfaces parallel to the substrate and inclined side surfaces. The gate bus lines and the gate electrodes are anodically oxidized, so that they include inner conducting portions and outer insulating oxide films covering the inner conducting portions. The outer insulating films prevent the bus lines from short circuiting, and the inclined side surfaces of the bus lines makes it possible to fabricate a dense wiring arrangement.

Abstract: Described is a dynamic threshold field effect transistor (DTFET) that includes a gate-to-body contact structure within the gate. By forming the gate-to-body contact structure that can reduce the gate-to-body contact resistance and increase the device packing density, the DTFET can be used in silicon on insulator (SOI) technologies and take full advantages of the DT-CMOS performance benefit.

Abstract: A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first contact region and the second contact region have an at least approximately identical material composition which is practically homogeneous within the respective contact region. A method is provided for contact-connecting n-conducting and p-conducting silicon carbide, in each case with at least approximately identical material.

Abstract: An LED device that emits light in a pattern is disclosed. The LED device is a layer of active material that is sandwiched between a transparent substrate with an anode formed thereon and a cathode. The active material has a layer of light emitting material that emits light when electron/hole recombination is induced in the material.

Abstract: The present invention is directed to a method of fabricating a dual gate structure for use in FET devices wherein the dual gate structure comprises a bottom gate that is substantially a mirror image of the top gate. The method utilizes a shallow trench isolation process for the purpose of planarization and gate alignment. Also disclosed is a dual gate structure which is fabricated utilizing the method of the present invention.

Abstract: In a charge transfer device and a driving method therefor, electrons are injected through an insulating film into floating gate 108 or electrons are extracted through the insulating film from the floating gate 108, whereby the potential of the floating gate is converged to a fixed voltage.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.

Abstract: Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions are described. In one embodiment, a capacitor storage node is formed having an uppermost surface and an overlying insulative material over the uppermost surface. Subsequently, a capacitor dielectric functioning region is formed discrete from the overlying insulative material operably proximate at least a portion of the capacitor storage node. A cell electrode layer is formed over the capacitor dielectric functioning region and the overlying insulative material. In another embodiment, a capacitor storage node is formed having an uppermost surface and a side surface joined therewith. A protective cap is formed over the uppermost surface and a capacitor dielectric layer is formed over the side surface and protective cap. A cell electrode layer is formed over the side surface of the capacitor storage node.

Abstract: A semiconductor device structure with differential field oxide thicknesses. A single field oxidation step produces a nitrided field oxide region (322) that is thinner than a non-nitrided field oxide region (324). The bird's beak (326) of the nitrided field oxide (322) encroaches less into the active cell region than the bird's beak (328) of the thicker non-nitrided field oxide (324). The differential field oxide thicknesses allow isolation of multi-voltage integrated circuit devices, such as flash memory devices, while increasing available active cell area for a given design rule.

Abstract: A booster plate is insulatively formed on a silicon semiconductor substrate with a first gate insulating film disposed therebetween. A floating gate which forms a capacitor in cooperation with part of at least the upper surface of the booster plate is insulatively formed on the booster plate with a second insulating film disposed therebetween. Further, a control gate is insulatively formed on the floating gate with a third insulating film disposed therebetween.

Abstract: A nonvolatile semiconductor memory device structure having a matrix of memory cells in a semiconductor material layer. The memory cells are located at intersections of rows and columns of the matrix. Each memory cell includes a control gate electrode connected to one of the rows, a first electrode connected to one of the columns and a second electrode. The rows comprise polysilicon strips extending parallel to each other in a first direction, and the columns are formed by metal strips extending parallel to each other in a second direction orthogonal to the first direction. Short-circuit metal strips are coupled for short-circuiting the second electrodes of the memory cells. The columns and the short-circuit strips are respectively formed in a first metal level and a second metal level superimposed on each other and electrically insulated by a dielectric layer.

Abstract: A regulating resistor network includes a plurality of resistors connected in parallel to each other. Each of these resistors is cuttable by being irradiated with light, and a resistance value of the regulating resistor network is adjustable by cutting at least one of the resistors off.

Abstract: A power trench MOS-gated device includes a heavily doped semiconductor substrate, a doped upper layer of a first conduction type on the substrate, and a trench gate in the upper layer that comprises a conductive material separated from the upper layer by an insulating layer. An enhanced conductivity drain region underlies the trench gate, and a heavily doped source region of the first conduction type and a heavily doped body region of a second and opposite conduction type are disposed at an upper surface of the upper layer. A deep well region of the second conduction type underlies the source and body regions and extends below the trench gate and abuts the enhanced conductivity drain region. A process for forming a power trench MOS-gated device comprises providing a semiconductor substrate having a doped upper layer of a first conduction type.

Abstract: A method for reducing a contact resistance is described. The method is suitable for a wafer that comprises a WSix layer, a native oxide on the WSix layer, and a dielectric layer surrounding and partially covering the WSix layer, wherein the dielectric layer has a contact hole exposing the native oxide. The wafer is placed into a vacuum system. A first polysilicon layer is deposited on the native oxide. The first polysilicon layer and the native oxide are annealed. A second polysilicon layer is formed on the WSix. The wafer is removed from a vacuum system.

Abstract: In an active matrix liquid crystal display (LCD) device, a conductor line interconnecting a drain of each thin-film transistor and a corresponding pixel electrode constructed with indium tin oxide (ITO) is formed in a three-layer structure in which an aluminum film is sandwiched between a pair of titanium films. This construction prevents poor contact and deterioration of reliability because electrical contact is established between one titanium film and semiconductor and between the other titanium film and ITO. The aluminum film has low resistance which is essential for ensuring high performance especially in large-screen LCDs.

Abstract: A semiconductor device is provided without degrading the performance of an internal circuit, which has an SOI structure coexistingly having an SOI static electricity protection circuit to prevent an internal circuit from being damaged due to static electricity through an input/output pad. To achieve this, a structure is made by comprising a silicon substrate of a first conductivity type, a buried oxide film formed on the silicon substrate, a first silicon layer of the first conductivity type formed on the buried oxide film, a second silicon layer of the first conductivity type formed on the buried oxide film and having a thickness smaller than the first silicon layer of the first conductivity type, and an SOI static electricity protection circuit provided between an input/output pad and an internal circuit.

Abstract: The invention includes field effect transistors, integrated circuitry, methods of forming field effect transistor gates, and methods of forming integrated circuitry. In one implementation, a field effect transistor includes a pair of source/drain regions having a channel region positioned therebetween. A gate is positioned operatively proximate the channel region, and includes conductively doped semiconductive material, a silicide layer and a conductive diffusion barrier layer. In another implementation, integrated circuitry comprises a field effect transistor having a gate, a gate dielectric layer, source/drain regions and a channel region. The gate comprises semiconductive material conductively doped with a conductivity enhancing impurity of a first type and a conductive diffusion barrier layer. Insulative material is provided proximate the gate, and includes semiconductive material therein which is in electrical connection with the gate.

Abstract: A semiconductor position sensor functions as a PSD or as a two-part split PD or the like, based on control of disconnection/connection of basic, electroconductive strips by controlling a voltage of gate electrode. This semiconductor position sensor does not require a PD separate from the PSD, whereby the device itself can be constructed in compact size. Further, since all signal light can impinge on a photosensitive area, detection sensitivity can be improved.

Abstract: On the surface of a field oxide film (3 of FIG. 2e) formed on a substrate region where the effective thickness in the vertical direction of a substrate is diminished due to the presence of a crystal defect (2 of FIG. 1a), the field oxide film is etched by a predetermined thickness until a recess (4 of FIG. 2f) ascribable to the presence of the defect is exposed (step of FIG. 2f). A new oxide film then is formed in an amount corresponding to the above-mentioned thickness on the field oxide film (step of FIG. 3g) to diminish the depth of the recess ascribable to the presence of the defect. To provide a semiconductor device in which leakage between elements can be eliminated with a thin LOCOS oxide film thickness remaining unchanged.

Abstract: Methods of forming integrated circuit capacitors include the steps of forming a lower electrode of a capacitor by forming a conductive layer pattern (e.g., silicon layer) on a semiconductor substrate and then forming a hemispherical grain (HSG) silicon surface layer of first conductivity type on the conductive layer pattern. The inclusion of a HSG silicon surface layer on an outer surface of the conductive layer pattern increases the effective surface area of the lower electrode for a given lateral dimension. The HSG silicon surface layer is also preferably sufficiently doped with first conductivity type dopants (e.g., N-type) to minimize the size of any depletion layer which may be formed in the lower electrode when the capacitor is reverse biased and thereby improve the capacitor's characteristic Cmin/Cmax ratio. A diffusion barrier layer (e.g., silicon nitride) is also formed on the lower electrode and then a dielectric layer is formed on the diffusion barrier layer.

Abstract: A method for making a planar spin-on-glass (SOG) layer over integrated circuits at the corners of the chip (die) areas is achieved. This method allows more reliable integrated circuits to be made, and is particularly useful for liquid crystal displays (LCDs) by eliminating optical distortion at the corners of the LCD die areas. When a conducting layer is patterned to form portions of the integrated circuits over the chip areas, the layer is concurrently patterned to form a fill layer in the kerf areas. The spacing between the fill layer in the kerf areas and the edges of the patterned conducting layer in the die areas is selected to have a width sufficiently narrow to provide a uniform coating of SOG over the corners of the die areas without buildup of the SOG. After depositing a thin SiOx cap layer, a uniform SOG layer is deposited. The fill layer in the kerf areas also prevents dishing of the SOG layer when the SOG is chem-mech polished back.

Abstract: A contact level via and a method of performing selective deposition of a barrier layer to form a contact level via for selective aluminum metallization. Specifically, the method forms a self-aligned silicide region by depositing titanium atop a structure containing a contact level via, converting the titanium in the contact regions into titanium silicide, removing the unreacted titanium, and performing nitridation of the titanium silicide to complete a barrier layer located in only the contact region of the via. Once the barrier layer is formed, the layer can be optionally fortified through oxygen stuffing to create an effective barrier layer for aluminum metallization.

Abstract: In a package of an LOC (Lead On Chip) structure in which inner lead portions are partially arranged over a major face of a semiconductor chip, there is disclosed a technique for thinning the package and speeding up signal transmission.

Abstract: A flexible circuit system includes a flexible dielectric layer having a first conductive layer on a first side and a second conductive layer on a second side. A non-conductive, closed end passage extends through the dielectric layer from the first side to the second side. The first conductive layer is adjacent an open end of the passage at the first side, and the second conductive layer forms the closed end of the passage at the second side. A stiffener member is attached to the second conductive layer. A solder ball is connected to provide a conductive path between the first conductive layer and the second conductive layer.

Abstract: A method for forming a contact opening is described and which includes providing a node location to which electrical connection is to be made; forming a conductive line adjacent the node location, the conductive line having a conductive top and sidewall surfaces; forming electrically insulative oxide in covering relation relative to the top surface of the conductive line; forming electrically insulative nitride sidewall spacers over the conductive sidewall surfaces, the nitride sidewall spacers projecting outwardly of the conductive line top conductive surface, the electrically insulative oxide positioned between the nitride sidewall spacers; forming an electrically insulative layer outwardly of the conductive line, and the node location; and etching a contact opening to the node location or the top surface through the electrically insulative layer substantially selective relative to the nitride sidewall spacers.

Abstract: In the substrate for a semiconductor device of the present invention, a second substrate having an opening portion is adhered on a first flat substrate. The opening portion makes the surface of the first substrate exposed and contains a semiconductor chip. Chip connection terminals to be connected to the semiconductor chip are provided on the second substrate. External connection terminals are provided on the back surface of the first substrate. The chip connection terminals and the external connection terminals are connected with each other by a wiring pattern passing through through-holes formed and penetrating both the first and second substrate.

Abstract: A ball grid array electronic package is attached to a substrate by means of solder balls and solder paste. Connection is made between a contact on the ball grid array and a solder ball by means of a first joining medium, such as a solder paste. Connection is made between a solder ball and a contact arranged on the substrate by means of a second joining medium. The contact arranged on the substrate is substantially quadrilateral in shape, and preferably substantially square in shape. Connection to the substrate, e.g., using round solder balls, is much more easily detected, e.g., by x-ray, than when using round pads, especially those having a smaller diameter than the balls.

Abstract: The Application describes a method and devices for manufacturing a broadband cholesteric polarizer having a well-defined bandwidth and edge position. To this end, a liquid-crystalline cholesterically ordered layer comprising reactive chiral monomers and reactive nematogenic monomers having a different reactivity is polymerized by exposure to radiation. The invention is characterized in that the intensity of the radiation is increased substantially, preferably by a factor of 10 or more, when a desired edge position of the band is reached. As a result, the bandwidth and edge position of the reflection band reached at that moment are frozen as it were. A monochromatic sensor can be used to determine whether said edge position has been reached, the wavelength used by the sensor corresponding to the wavelength of the desired edge position of the band. Broadband, cholesteric polarizers having a well-defined bandwidth and edge position can very advantageously be used in a display.

Abstract: The invention relates to a method for manufacturing a fiber reinforced composite comprising the steps of (i) preparing a mould; (ii) filling the cavity of the mould with a fiber-reinforced polymerizable material comprising an organic matrix and a fiber component embedded within the matrix; (iii) applying pressure to the fiber-reinforced polymerizable material; and (iv) curing the fiber-reinforced polymerizable material. The method is characterized in that the mould is designed in a way which allows excess organic matrix material to escape form the cavity during pressing.

Abstract: A method of producing a polyphosphate, orthophosphate, phosphonate or the like chemical treatment cake is disclosed. Conventional commercially available treatment material is obtained in powder form and mixed with water to initiate an exothermic reaction. The material is then poured into a mold and placed inside an insulated hermetic cabinet and allowed to quiescently cool in the passive environment of the cabinet. The cake is harder, more uniform and relatively free of inclusions compared to cakes formed by other methods.

Abstract: The present invention discloses a process for manufacturing tablets using a press provided with at least one compression chamber having an upper and a bottom mold and a lubrication device having at least one two-substance nozzle which sprays the lubricant onto the walls of said compression chamber in a cone shaped pattern, wherein at least one additive is added to the lubricant to thereby apply the additive onto the surface of the tablets during the manufacturing process.

Abstract: A method of manufacturing fiber reinforced plastics by means of a drawing method having the steps of immersing resins into fibers for reinforcing aligned in one direction, which are supplied continuously, and curing the resins immersed in the fibers by drawing the fibers into a die, is disclosed. In the method according to the invention, the fibers are moved in a resin supply zone at a substantially same speed as that of resin immersing in the fibers along a direction in which the fibers are aligned.

Abstract: A prefabricated insulated wall panel for installation with like wall panels for easily and inexpensively building a wall. The wall panel is a unitary combination of (1) a member having a planar portion and a plurality of spaced rib portions integral therewith and extending therefrom for receiving insulation therebetween, (2) insulating material attached to edges of the rib portions for reducing thermal conductivity from the rib portions to wallboard attached to the wall panel, and (3) a nailer for attachment of wallboard.

Abstract: A seat cushion mold with an elastic member and method provide the manufacture of an improved seat cushion for use in upholstered chairs or the like having a smooth, uniform shape without unsightly underlines. A thick, resilient foam block is positioned on a rigid planer base and is urged into the mold whereby a thin foam cover layer is adhered to the outer edges of the planar base to produce a precisely contoured cushion which can be upholstered and fitted to a chair frame.

Abstract: A method and apparatus for laser trimming a shaped plastic workpiece use a laser beam positioned and directed by a robotic arm traveling along a pre-programmed path to trim the edges of a workpiece held against a positioning block. Preferably, the positioning block includes a laser beam capturing channel comprising suction holes for removing smoke generated by the ablation and burning of the plastic so as to minimize the risk of smoke damage to the workpiece and to remove soot and vapors from the work area. At the same time, laser beams are inhibited form reflecting back off the block onto the workpiece by positioning the channel under the workpiece and along the predetermined cutting path.

Abstract: A method of providing gas assistance to a plastic injection molding process including an initial burst of gas at the supply pressure.

Abstract: A packing gland assembly mountable on a shaft extending through an opening in a wall member of an apparatus consisting of a main housing member mountable on the shaft, having an opening for receiving the shaft therethrough, the opening being provided with an enlarged section defining an annular space about the shaft when the main housing member is mounted on the shaft with the shaft extending through the opening therein; a split housing member mountable on the shaft including a section receivable in the annular space provided by the main housing section, such section having an opening for receiving the shaft therethrough and being provided with an enlarged section defining an annular space about the shaft when the main and split housing members are mounted on the shaft with the shaft extending through the openings therein; at least one packing ring mountable on the shaft and receivable within the annular space of the split housing member when the main and split housing members are mounted on the shaft in the

Abstract: Shock-absorbing wedge provided to be arranged between a boot and a board, or between the boot and a device for retaining the boot on the board, the board being adapted to snowboarding. The wedge is characterized in that it has at least two layers of materials of a different hardness. A first layer has a support surface provided to make contact with the boot and has a bonding surface opposite to the support surface. A second layer is joined to the bonding surface of the first layer. The hardness of the second layer is less than the hardness of the first layer.

Abstract: A snowboard suspension system which comprises a mounting plate (27) which is connected to a binding plate (29) via one or more hinges (26). One or more dampers (30) situated between the binding plate (29) and the mounting plate (27) serve to dampen any compressive forces. A connection plate (31) may be added to produce a compound system.

Abstract: A sideframe for a wheelchair has a top frame and a separate bottom frame. An axle plate extends between and is attached to both said top and bottom frames. A caster plate is attached to the sideframe. The top frame and the bottom frame are removably attached to one another. In particular embodiments of the invention, the top and bottom frames each comprise a plurality of bolt apertures. The axle plate and the axle extension plate may each comprise a plurality of bolt apertures. The sideframe may support a rear-mounted major wheel, with the axle plate being to the rear of the sideframe and the caster plate being in the front of the sideframe. Alternatively, the sideframe may support a front-mounted major wheel, with the axle plate being to the front of the sideframe and the caster plate being to the rear. To mount the top frame to the bottom frame, the top frame may have a downwardly extending portion with a concave end piece extending therefrom.

Abstract: A method and arrangement for seat occupancy recognition in a motor vehicle utilizes a seat occupancy sensor which is triggered only for an interval of time and only in predetermined situations.

Abstract: An inflator (10) comprises a housing (20) defining first and second combustion chambers (100, 120). A first inflation fluid source (140) in the first combustion chamber (100) is actuatable to effect flow of inflation fluid. A first initiator (12) in the housing (20), when energized, effects actuation of the first inflation fluid source (140). A second inflation fluid source (150) in the second combustion chamber (120) is actuatable to effect flow of inflation fluid. A second initiator (124) in the housing (20), when energized, effects actuation of the second inflation fluid source (150). The housing (20) deforms due to the pressure of inflation fluid in the housing upon actuation of one or both of the inflation fluid sources (140, 150). The housing (20), after deforming, has a fluid passage (90) for directing flow of inflation fluid out of the housing. The flow area of the fluid passage (90) varies in accordance with the pressure of inflation fluid in the housing (20).

Abstract: A threaded pipe flange and piping system utilizing the same. The threaded pipe flange includes a base portion having a predetermined shape and at least two openings dimensioned to accept at least two mounting bolts. A shoulder portion extends from, and is integral to, the base portion and includes at least two substantially flat gripping surfaces that allow the flange to be attached using an open end wrench, adjustable wrench or pipe wrench. A threaded opening extends through the base portion and the shoulder portion and is sized to mate with the threaded pipe to which the flange is to be attached. In operation, the pipe flange is attached to the predetermined threaded pipe by aligning the threaded opening with the predetermined threaded pipe, gripping the gripping surfaces of the shoulder portion, and rotating the pipe flange until the flange is tight.

Abstract: Apparatus for lifting an open top container, such as a drum, comprises a plurality of clamps each having shaped outer and inner jaws for frictionally gripping therebetween a corresponding sidewall portion of the container. A lifting mechanism closes the clamps and then lifts the container with the container suspended from the clamps. The apparatus is constructed so that the weight of the container increases the clamping pressure as the container is lifted. Other loads having an upright tubular sidewall can also be lifted. In one embodiment, the lifting mechanism employs wedges for closing the clamps, and in another embodiment the lifting mechanism employs linkages for closing the clamps.

Abstract: A vehicle seat assembly for a vehicle floor includes a seat back frame pivotally connected with respect to the vehicle floor for movement between a fully reclined position for seating and a horizontal position for forming a load floor. A drive motor is connected to the seat back and operative to adjust the reclined position of the seat back frame with respect to the vehicle floor and operative to pivot the seat back frame between the fully reclined and horizontal positions.

Abstract: A braking force controlling apparatus changes a magnitude of a braking force produced by a braking operation based on a speed of the braking operation. The braking force controlling apparatus is directed to maintaining a brake-assisting control even when a beginner unintentionally releases a braking operation force on a brake pedal. A hydraulic pressure sensor (40) detects a master cylinder pressure, and a maximum master cylinder pressure during the braking operation of the brake pedal (30) is stored in an ECU (10). When the master cylinder pressure is found to be below a release-judgment level of the master cylinder pressure, which is determined based on the maximum master cylinder pressure, the brake-assisting control is terminated. When the master cylinder pressure is found to be above the release-judgment level, the brake-assisting control is maintained.

Abstract: A synchronous machine formed as a generator for a motor vehicle has a stator, a rotor, an excitation system including a plurality of individual poles in the rotor formed as claw poles, a unit for compensation of stray flux in free spaces between the claw poles and including permanent magnets provided in pole plates arranged at axial ends of the rotor, a holder supporting the permanent magnets against centrifugal and axial forces, the holder being composed of two non-magnetic holding rings which centrally surround the excitation system, abut against one another and have an outer contour extending to a lower side of the claw poles, holding arms which are bent on the holding rings in correspondence with a number of poles and extend in the free spaces to the pole plates so as to support the permanent magnets, the holding arms having free ends, holding tongueslaps supported by the free ends of the holding arms in direction toward a rotor shaft, the holding tongues being fixed on inner sides of the pole plates.