Abstract: A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing treatment of a substrate and then depositing the film. The treatment step creates nucleation and growth sites on the substrate for the film deposition process and promotes election emission of the deposited film. With this process, a patterned emission can be achieved without post-deposition processing of the film. A field emitter device can be manufactured with such a film.

Abstract: A method of applying thermal barrier coating systems to a metal piece having a cooling hole extending along a central axis through the piece from a first surface of the piece to a second surface of the piece opposite the first surface. The method includes spraying a bond coat on the first surface of the piece and spraying a thermal barrier coating on the bond coat. Further, the method includes spraying a high pressure fluid jet from a nozzle toward the hole and in a direction generally parallel to the central axis of the hole. The fluid jet is substantially free of solid particulate thereby permitting the jet to remove the bond coat and the thermal barrier coating from the hole without removing metal from the piece.

Abstract: A carbon nanotube is contacted with a reactive substance which is a metal or a semiconductor. The reactive substance is heated to diffuse atoms of the reactive substance into the carbon nanotube so that the carbon nanotube is partially transformed or converted into carbide as a reaction product. Thus, a heterojunction of the reaction product and the carbon nanotube is formed. For example, the carbon nanotube (2) is contacted with a silicon substrate (1). The silicon substrate (1) is heated to cause solid-solid diffusion of Si. As a result, SiC (3) is formed as the heterojunction. At least a part of a filament material of a carbon nanotube is irradiated with electromagnetic wave to deform the filament material.

Abstract: A laminating tape has an adhesive layer for adhering to a recording surface of a to-be-laminated tape, and is formed to have a substantially identical width to a width of the to-be-laminated tape. The laminating tape has a preliminary laminating portion formed at a leading end thereof, for being preliminarily laminated to the to-be-laminated tape, and a non-adhesive portion having a predetermined length and extending continuously from an trailing end of the preliminary laminating portion, for permitting lateral motion of the laminating tape with respect to the to-be-laminated tape.

Abstract: A geosynthetic liner may be formed of sheets of substantially liquid impermeable synthetic material such as high density polyethylene. The adjacent edges of adjacent sheets may be lapped over one another to form a lapped joint. The lapped joint may be covered by a relatively narrow seam cover which seals the region between the two sheets. The cover may be formed of a geomembrane layer over a clay layer. The clay layer may be formed of particles of bentonite which are adhesively secured to the geomembrane layer. Thus, the geomembrane liner seam may be sealed by simply unrolling the cover over the lapped joint and covering the sheets and the cover with a layer of overburden.

Abstract: A self-adhesive reinforced foam gasket comprising a release liner having an upper surface which is a release surface, a layer of pressure sensitive adhesive applied to the release surface, a layer of flexible polymeric film, preferably polyester film, applied to the pressure sensitive adhesive layer, and a layer of flexible foam, preferably closed cell PVC flexible foam, thermally bonded to the flexible polymeric film layer. A length of material for die-cutting the gasket therefrom is provided, along with a method of making the length of material. The gasket may be used in automobiles and other applications.

Abstract: A reversibly extensible polymeric film is hot formed, as by coextrusion, using selected polymeric materials that provide discrete areas of elastic and inelastic polymeric materials arranged in laterally spaced and longitudinally elongated lanes or stripes connected by integrally formed joints therebetween. The elastic materials comprise block polymers selected from tetrablock, triblock and diblock polymers, and the inelastic material is selected from polyolefins such as polyethylene, polypropylene, poly(ethylene-propylene), poly(ethylene-vinyl acetate), poly(styrene-butadiene), or copolymers or blends thereof.

Abstract: A method of forming a laminated glass substrate structure suitable for use in a display device or the like, includes the steps of: a) preparing a first glass substrate having first and second main faces; b) preparing a second glass substrate having third and fourth main faces; c) after the steps a) and b), adhering the first and second glass substrates with a space formed therebetween and with the third main face facing to the second main face; and d) after the step c), performing a smoothing process relative to all edges excepting one edge among edges defining the first main face. The laminated glass substrate structure provides an improved load resistance.

Abstract: Fiber-reinforced vehicle interior trim and a method of manufacturing interior trim in a one-step molding process. A skin material and fibrous reinforcement mat are located in a molding tool. A moldable foam-forming material is applied to the tool between the skin material and the fibrous reinforcement mat. The foam-forming material penetrates the mat and expands and cures such that the foam binds to both the skin and the reinforcement mat to produce a molded interior trim piece.

Abstract: A process for the injection molding of a foamable plastic composition which comprises the steps of injecting a molten foamable plastic composition into a cavity having a lower volume than that of a desired molded article; after the completion of injection filling, cooling the composition to the state wherein a solidified layer in contact with a mold surface mingles with a molten inside layer; enlarging the volume of the cavity to that of the desired molded article; and after further cooling, removing the molded article. This molded article comprises a layer having a non- or low-foamed, dense structure on the surface and a high-foamed layer at the inside, and has a light weight and good thermal insulating properties.

Abstract: The present invention provides a yarn having a force-displacement profile such that:

Abstract: An extended life fluorescent polyvinyl chloride sheeting and a method for forming the sheeting are disclosed. The sheeting includes a polyvinyl chloride film having a fluorescent colorant incorporated therein. A protective polymer layer is attached to the polyvinyl chloride film. A light filtering agent is incorporated into the protective layer, wherein the filter agent blocks the 425 nm and lower wavelengths of the visible spectrum.

Abstract: A composite material has plate 4 having holes and a bonded to a first member to form an intermediate layer, and a second member which is made of a material different from the first member 1 laminated onto the intermediate layer 2 while charging a portion of the second member 5 into the holes 3 of the intermediate layer 5 to form a composite material 6. The holes 3 of the plate 4 which forms the intermediate layer 2 have a shape in such that the charged second member exerts a resisting force against a tensile stress applied in a direction perpendicular to the surface of the first member 1, e.g., a shape having a first hole opened on the side of the second member and a second hole communicated with the first hole and having a space not overlapped with the first hole, or a shape that an opened area on the side of the second member is smaller than that on the side of the first member.

Abstract: The present invention provides a current collector for a battery which comprises a lead or lead alloy substrate and a thin cladding of tin, batteries utilizing such a current collector and methods for manufacturing such batteries. Preferably the tin cladding is composed of substantially pure tin and the concentration of the tin cladding relative to the weight of the current collector (i.e., the combined weight of the substrate and cladding) is less than 4% by weight. The tin cladding forms a noncontinuous layer over the outer surface of the substrate such that there are interspersed regions of lead and tin at the current collector surface. Batteries utilizing such current collectors exhibit marked improvement in performance compared to similar cells composed of tin alloys. In particular, batteries using current collectors of the present design offer superior cycle life and shelf life performance.

Abstract: A phase shifting mask can be used with exposure lights of two different wavelengths. The depth of the phase shifting layer is calculated and fabricated such that it shifts a first exposure light about 180° and a second exposure light about 180°.

Abstract: In one aspect, the invention includes a method of maintaining dimensions of an opening in a semiconductive material stencil mask comprising providing two different dopants within a periphery of the opening, the dopants each being provided to a concentration of at least about 1017 atoms/cm3.

Abstract: An exposed film package for preserving one strip of exposed photographic film includes a film sheath, which has plural pockets. Plural film pieces are formed by cutting the one strip of the exposed film, and contained respectively in the pockets in the film sheath. An index photograph is constituted of photographic paper, on which positive images of frames from the one strip of the exposed film are printed. The photographic paper has a size substantially equal to the film pieces. The positive images are formed in reducing a size of the frames, and grouped in association with the film pieces. Groups of the positive images are arranged in consideration of an order of exposure of the frames. The index photograph is contained in one of the pockets in association with the film pieces constituting the one strip.

Abstract: Disclosed are a process for preparing a phosphor pattern for a field emission display panel which comprises the steps of: (I) forming (A) a photosensitive resin composition layer containing a phosphor on a substrate to which a conductive layer is formed; (II) irradiating active light to (A) the photosensitive resin composition layer containing a phosphor imagewisely; (III) selectively removing (A) the photosensitive resin composition layer to which active light has been imagewisely irradiated by development to form a pattern; and (IV) calcining the pattern to remove unnecessary portion to form a phosphor pattern, a photosensitive element for a FED display panel, phosphor pattern for a FED display panel, and a FED display panel.

Abstract: A method for the control of wafer surface temperatures during post exposure bake on hot plates of wafers which carry integrated circuits. Also disclosed is a method of maximizing image size uniformity for integrated circuits through the zonal control of temperatures of hot plates during post exposure bake processes for effectively modulating the wafer surface temperatures. Images within a semiconductor wafer integrated circuit line pattern are repeated to process a wafer through the photolithographic patterning process, including post exposure baking, to measure the image linewidths and compare these with an experimentally derived correlation chart; for instance, PEB temperature vs. linewidth for a given or specified photomasking process.

Abstract: A method of imaging acids in chemically amplified photoresists involves exposing to radiation a chemically amplified photoresist comprising a pH-dependent fluorophore. Upon exposure to radiation, such as deep-UV radiation, the chemically amplified photoresist produces an acid, which is then visualized by the fluorescence of the pH-dependent fluorophore. An image is generated from the fluorescence of the pH-dependent fluorophore, thus providing a map of the location of the acid in the photoresist. The images are able to be visualized prior to a post-exposure bake of the resist composition. Chemically amplified photoresists comprising pH-dependent fluorophores are useful in the practice of the present invention. The method finds particular use in examining the efficiency of photoacid generators in chemically amplified photoresists, in that it allows the practitioner the ability to directly determine the amount of acid generated within the photoresist.

Abstract: According to the present invention there is provided a heat mode imaging element for making a lithographic printing plate having on a lithographic base with a hydrophilic surface a first layer including a polymer soluble in an aqueous alkaline solution, and a top layer on the same side of the lithographic base as the first layer that is IR-sensitive and unpenetrable for an aqueous alkaline developer wherein said first layer and said top layer may be one and the same layer; characterized in that the surface of said element upon exposure and treatment with an aqueous alkaline developer is such that

Abstract: According to the present invention there is provided a heat mode imaging element for making a lithographic printing plate having on a lithographic base with a hydrophilic surface a first layer including a polymer, soluble in an aqueous alkaline solution but not in water and less than 5% by weight versus the polymer, soluble in the aqueous alkaline solution of a hydrophilic polymer and a top layer on the same side of the lithographic base as the first layer which top layer is IR-sensitive and unpenetrable for or insoluble in an alkaline developer wherein said first layer and said top layer may be one and the same layer; characterized in that said top layer contains a compound selected from the group consisting of a polymer in an amount from 30 mg to 500 mg/m2, a triaryl methane dye and a phthalocyanine dye.

Abstract: According to the present invention there is provided a heat ode imaging element for providing a lithographic printing plate consisting of a lithographic base with a hydrophilic surface and a top layer that is sensitive to IR-radiation, comprises a polymer soluble in an aqueous alkaline solution, and is unpenetrable for an aqueous alkaline developer, characterized in that said top layer comprises a polysiloxane surfactant.

Abstract: A method of fabricating an opening with a deep ultra-violet photoresist layer. An insulating layer is formed on a substrate having a device structure. A deep ultraviolet photoresist layer with a first opening is formed on the insulating layer and a hard mask layer is then formed on the surface and the sidewalls of the deep ultra-violet photoresist layer. The first opening is used to pattern the insulating layer to form a second opening within the insulating layer wherein the hard mask layer is to protect the deep ultra-violet photoresist layer. The deep ultra-violet photoresist layer and the hard mask layer are removed to expose the insulating layer and a desired opening is thus accomplished.

Abstract: Method for the formation of resist patterns by using a chemically amplified resist which comprises an alkali-insoluble base polymer or copolymer and an acid generator, in which the patternwise exposed film of said resist is developed with an organic alkaline developer in the presence of a surface active agent containing a higher alkyl group in a molecule thereof. The resist patterns have no drawback such as cracks and peeling, and thus can be advantageously used in the production of semiconductor devices such as LSIs and VLSIs.

Abstract: A heat developable light-sensitive material comprises a support, a light-sensitive layer and a non-light-sensitive layer. The light-sensitive layer contains silver halide and a reducing agent.

Abstract: The present invention relates to a utility lighter platform which includes a lighting mechanism configured to selectively ignite fuel supplied from a fuel supply container, and a frame configured to operatively house the lighting mechanism and configured to receive an outer shell thereon. The frame includes a fuel supply container housing structure configured to hold a fuel supply container at a first end of the frame and an insulating cap holding structure configured to receive an insulating cap at a second end of the frame and configured to house a nozzle operatively connected to the fuel supply. The frame also includes an ignitor assembly holding structure configured to house an ignitor assembly, and a trigger holding structure configured to operatively hold a trigger stem with which to activate the ignitor assembly and to release fuel from the fuel supply in order to ignite fuel received at the nozzle.

Abstract: The kit consists of a container holding a plurality of candles of a first predetermined size and shape such that the candles can be assembled together to form a regular geometric solid of a geometric shape different from that of the individual candles. Specific embodiments of the invention include candles shaped like triangular prisms forming a square-cross-section solid when assembled together, combinations of L-shaped and cylindrical candles forming a solid of square-cross-sectional shape, as well as candles forming solids having octagonal, hexagonal, circular, etc. cross-sectional shapes when assembled in the kit. When removed from the container, the candles in the kit can be arranged in a variety of decorative patterns, including the pattern used in the kit.

Abstract: A method to treat a silicon oxynitride surface, including a silicon oxynitride surface covered by a photo resist layer, is described in which the photo resist layer is first removed by an oxygen plasma treatment process, followed by an argon plasma treatment process to overetch the SiON layer.

Abstract: An additive formulation comprising heparinase and trehalose, a method for using the formulation and a device containing the formulation. The additive formulation is useful in substantially neutralizing residual heparin from a blood sample when used in a blood collection tube without interfering with the clinical analysis of the blood sample.

Abstract: Methods for enhancing the production of viral vaccines in animal cell culture are described. These methods rely on the manipulation of the cellular levels of certain interferon induced antiviral activities, in particular, cellular levels of double-stranded RNA (dsRNA) dependent kinase (PKR) and 2′-5′ oligoadenylate synthetase (2-5A synthetase). In cell cultures deficient for PKR or 2-5A synthetase, viral yield is enhanced by several orders of magnitude over cell cultures with normal levels of these proteins making these cell cultures useful for the production of viral vaccines.

Abstract: The subject invention concerns the discovery of Bacillus thuringiensis isolates with advantageous activity against weevils. In preferred embodiments of the invention, B.t. isolates, or toxins therefrom, are used to control alfalfa weevils, boll weevils, and/or rice water weevils. The toxins can be administered to the pests through a variety of methods including the transformation of bacteria or plants to produce the weevil-active toxins.

Abstract: The present invention discloses: (i) a non-pathogenic probiotic microorganism and its probiotic/therapeutic uses; (ii) a formulation comprising an aqueous solution of a volatile fraction (VF) prepared from the extract of at least one plant derived material and its therapeutic uses; (iii) a process of manufacturing the formulation from the plant derived material; (iv) a probiotic composition comprising the non-pathogenic probiotic microorganism of the invention and/or other probiotic microorganism(s) and the formulation of the invention, and its probiotic/therapeutic uses; (v) a composition for industrial applications comprising the formulation of the invention and microorganism(s) of industrial applicability; and (vi) industrial processes and apparatuses in which the latter composition is used.

Abstract:

Abstract: A composition for measuring the foliar uptake of an agrochemical comprising the agrochemical and Congo Red as a tracer; and a method for measuring the foliar uptake of an agrochemical comprising the steps of (a) applying a composition containing the agrochemical and Congo Red to a plant and a control plate, (b) washing the plant and the control plate with a solvent to extract the agrochemical and Congo Red, (c) measuring the concentrations of the agrochemical and Congo Red in the wash extracts, and (d) calculating the foliar uptake of the agrochemical.

Abstract: A method of fabricating a semiconductor device includes a step of attaching a circuit substrate on a semiconductor wafer in alignment with each other, providing an electrical interconnection between the circuit substrate and semiconductor devices formed in the wafer, providing solder bumps on the circuit substrate, and dicing the semiconductor wafer together with the circuit substrate thereon along a scribe line.

Abstract: A method for crystallizing an amorphous silicon thin-film is provided, in which amorphous silicon thin-films on a large-area glass substrate for use in a TFT-LCD (TFT-Liquid Crystal Display) are crystallized uniformly and quickly by a scanning method using a linear lamp to prevent deforming of the glass substrate. The crystallization method includes the steps of forming an amorphous silicon thin-film on a glass substrate, and illuminating a linear light beam on the amorphous silicon thin-film from the upper portion of the glass substrate according to a scanning method. The crystallization method is applied to a polycrystalline silicon thin-film transistor manufacturing method including the steps of forming an amorphous silicon thin-film on a glass substrate, and crystallizing the amorphous silicon of the thin-film transistor according to a scanning method using a linear light beam.

Abstract: A method for crystallizing an amorphous silicon thin-film is provided, in which amorphous silicon thin-films on a large-area glass substrate for use in a TFT-LCD (TFT-Liquid Crystal Display) are crystallized uniformly and quickly by a scanning method using a linear lamp to prevent deforming of the glass substrate. The crystallization method includes the steps of forming an amorphous silicon thin-film on a glass substrate, and illuminating a linear light beam on the amorphous silicon thin-film from the upper portion of the glass substrate according to a scanning method. The crystallization method is applied to a polycrystalline silicon thin-film transistor manufacturing method including the steps of forming an amorphous silicon thin-film on a glass substrate, and crystallizing the amorphous silicon of the thin-film transistor according to a scanning method using a linear light beam.

Abstract: Oxidation on the surface of a film of refractory metal constituting a gate electrode (word line WL) is suppressed by forming an insulation film constituting a cap insulation film of the gate electrode (word line WL) at a temperature of 500° C. or lower. Further, oxidation on the surface of the refractory metal film exposed to the side wall of the gate electrode (word line WL) is suppressed by forming an insulation film constituting the side wall spacer of the gate electrode (word line WL) at a temperature of 500° C. or lower.

Abstract: Disclosed is a semiconductor integrated circuit device (e.g., an SRAM) having memory cells each of a flip-flop circuit constituted by a pair of drive MISFETs and a pair of load MISFETs, the MISFETs being cross-connected by a pair of local wiring lines, and having transfer MISFETs, wherein gate electrodes of all of the MISFETs are provided in a first level conductive layer, and the pair of local wiring lines are provided respectively in second and third level conductive layers. The local wiring lines can overlap and have a dielectric therebetween so as to form a capacitance element, to increase alpha particle soft error resistance. Moreover, by providing the pair of local wiring lines respectively in different levels, integration of the device can be increased.

Abstract: Methods of forming merged logic DRAM devices on silicon-on-insulator (SOI) wafers having a relatively thick buried oxide region, where deep trenches are etched into the SOI substrate without etching through the buried oxide layer are provided. The methods of the present invention provide high performance SOI merged logic DRAM devices.

Abstract: A method for making reduced-size FLASH EEPROM memory circuits, and to the resulting memory circuit. An FET integrated circuit having two different gate oxide thicknesses deposited at a single step, where a portion of the thickness of the thicker oxide is formed, that oxide is removed from the area of the chip to have the thinner oxide, then the rest of the thicker oxide is grown during the time that the thinner oxide is grown on the area of the chip to have the thinner oxide. Layers for the floating gate stacks are deposited. Trenches are etched in a first, and then a second perpendicular direction, and the perpendicular sides of the stacks are covered with vertical-plane nitride layers in two separate operations. Tungsten word lines and bit contacts are deposited. Aluminum-copper lines are deposited on the bit lines.

Abstract: The invention relates to a method of producing a multi-level memory of the ROM type in a CMOS process of the dual gate type. Specifically, some of the transistors of the ROM cells have their polysilicon layers masked and the ROM cells are then implanted by a first dopant species in the active areas of the exposed transistors. Then the masks are removed from the polysilicon layer, and a second dopant species is implanted in said previously covered layer.

Abstract: A memory cell. The memory cell includes an access transistor. The access transistor is formed in a pillar of single crystal semiconductor material. The transistor has first and second source/drain regions and a body region that are vertically aligned. The memory cell also includes a body contact that is coupled to the body region. A gate of the transistor is disposed on a side of the pillar that is opposite from the body contact. A trench capacitor is also included. The trench capacitor includes a first plate that is formed integral with the first source/drain region of the access transistor and a second plate that is disposed adjacent to the first plate and separated from the first plate by a gate oxide. An insulator layer that separates the access transistor and the trench capacitor from an underlying layer of semiconductor material.

Abstract: A method of forming an improved isolation trench between active regions within the semiconductor substrate. The improved method incorporates a trench liner having a nitrogen content of approximately 0.5 to 2.0 percent. A pad layer is formed on a silicon substrate and a nitride layer is formed on the pad layer. Thereafter, a photoresist layer is patterned on the silicon nitride layer such that regions of the nitride layer are exposed where an isolation trench will subsequently be formed. Next, the exposed regions of the nitride layer and the pad layer situated below the exposed regions of the nitride layer are etched away to expose regions of the silicon substrate. Subsequently, isolation trenches are etched into the silicon substrate with a dry etch process. A trench liner is then formed and nitrogen incorporated into the trench liner.

Abstract: The stress at the edges of a thin film conductor can be reduced by noncoincident layered structures, which takes advantage of the characteristic stress polarity changing from tensile to compressive or vice versa in the edge vicinity in order to avoid device reliability and performance problems. By using noncoincident layered structures, destructive stress interference from different layers can be achieved to reduce the stress or stress gradient at the edge. The structures and methods disclosed herein can advantageously be used in many integrated circuit and device manufacturing applications (including gates, wordlines, and bitlines).

Abstract: A method of fabricating a feature on a substrate is disclosed. In a described embodiment the feature is the gate electrode of an MOS transistor. In this embodiment a polysilicon layer is formed on the substrate. Next, an edge definition layer of silicon nitride is formed on the feature layer. Then, a patterned edge definition layer of silicon dioxide is formed on the first edge definition layer. Then, a silicon nitride spacer is formed adjacent to an edge of the patterned second edge definition layer. Finally, the polysilicon layer is etched, forming the transistor gate electrode from the polysilicon that remains under the spacer.

Abstract: Methods of forming contact openings, memory circuitry, and dynamic random access memory (DRAM) circuitry are described. In one implementation, an array of word lines and bit lines are formed over a substrate surface and separated by an intervening insulative layer. Conductive portions of the bit lines are outwardly exposed and a layer of material is formed over the substrate and the exposed conductive portions of the bit lines. Selected portions of the layer of material are removed along with portions of the intervening layer sufficient to (a) expose selected areas of the substrate surface and to (b) re-expose conductive portions of the bit lines. Conductive material is subsequently formed to electrically connect exposed substrate areas with associated conductive portions of individual bit lines.

Abstract: A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition.

Abstract: A nitride wet etch in which liquid TEOS is flowed directly into the hot phosphoric acid bath before wafer etching begins. This preloads the bath chemistry with silicate ions, and thus helps assure very high selectivity to silicon oxides.