Abstract: A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.

Abstract: A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity in a point corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. A wavefront dividing element is disposed on a light path between the optical illumination system and the phase shift mask. The wavefront dividing element wavefront-divides the light beam supplied from the optical illumination system into a plurality of light beams, and condenses the wavefront-divided light beams in the corresponding phase shift portion or in the vicinity of the portion.

Abstract: A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor film. Each linearly radiating laser beam from each laser optical system radiated onto the semiconductor film is arrayed almost linearly in a length direction, with an interval on the semiconductor film.

Abstract: The present invention teaches an apparatus for pulling a single crystal, whereby a radial temperature gradient of a seed crystal and/or a neck is reduced to a minimum so as to inhibit occurrence of thermal stress and prevent induction of dislocations, thereby resulting in an improvement in dislocation-free rate of single crystals to be pulled in cases where a single crystal is pulled with a seed crystal and/or a neck being heated using an auxiliary heating device. The apparatus comprises a crucible to be charged with a melt, a heater located around the crucible, and an auxiliary heating device including a heating section which can be located so as to surround a seed crystal in a position near and above the melt, a transfer mechanism for withdrawing the heating section from a passing area of a single crystal, and a covering section to cover a clearance between the heating section and the seed crystal extending from the heating section.

Abstract: High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.

Abstract: Temperature of molten silicon 1 in an infrared image furnace 2 including a halogen lamp 8 as a heating source to grow a single crystal of silicon in a floating-zone method is measured with high precision according to light radiated from the molten silicon 1. By disposing an optical path tube extending to the molten silicon 1, light propagating from the molten silicon 1 in a particular direction can be extracted. As a result, light radiated from the molten silicon 1 can be extracted while reducing the influence of disturbance of light from various directions such as light radiated from the halogen lamp 8, reflected light and scattered light thereof, and the like. Luminance of light thus extracted is measured by a CCD camera 7 to obtain the temperature according to the luminance, and hence the temperature can be measured with high precision using a measuring apparatus of a simple configuration.

Abstract: Atomic layer deposition is used to provide a solid film on a plurality of disc shaped substrates. The substrates are entered spaced apart in a boat, in a furnace and heated to deposition temperature. In the furnace the substrate is exposed to alternating and sequential pulses of at least two mutually reactive reactants, in such way that the deposition temperature is high enough to prevent condensation of the at least two reactants on the surface but not high enough to result in significant thermal decomposition of each of the at least two reactants individually.

Abstract: A microfluidic method is provided that comprises: delivering a first fluid to a first lumen of a microfluidic device and a second, different fluid to a second lumen of the microfluidic device, the first and second lumens sharing a common wall which allows for diffusion between the lumens over at least a portion of the length of the lumens; and having the first and second fluids diffuse between the first and second lumens.

Abstract: A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant solution inside the site with an air gap between the screening solution and the precipitant solution. In a preferred embodiment, the film is transparent. In another preferred embodiment, the plate comprises a second transparent film supported by a lattice structure and the precipitant solution is sandwiched between the two films.

Abstract: A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.

Abstract: A method of making an oriented fluoride crystal blank for transmitting below 250 nm ultraviolet light includes irradiating a fluoride crystal blank with an x-ray beam, detecting the x-ray beams diffracted from the fluoride crystal blank, generating a diffraction pattern from the x-ray beam diffracted from the fluoride crystal blank, determining an angular deviation of an optical axis of the fluoride crystal blank from a specific crystallographic direction, and, if the angular deviation is not within a predefined range, modifying the fluoride crystal blank in a manner such that that the resultant angular deviation between the optical axis of the fluoride crystal blank from the specific crystallographic direction after modifying falls within the predefined range.

Abstract: A microfluidic device is provided that comprises: a substrate; and a plurality of microvolumes at least partially defined by the substrate, each microvolume comprising a first submicrovolume and a second submicrovolume in fluid communication with the first submicrovolume when the device is rotated about a first rotational axis; wherein rotation of the device about the first rotational axis causes a fixed volume to be transported to each of the second submicrovolumes.

Abstract: A melt level or the gap between a melt surface and a heat shield is measured accurately irrespective of how the melt surface is. A laser beam from a range-finding unit is reflected by a scanning mirror and projected on a melt surface through an entrance window and a quartz prism in a chamber of a puller. After specular reflection, the beam forms a measurement spot in the bottom of a heat shield and scatters. Part of the scatter, after specular reflection at the melt surface (secondary reflection), passes through the prism, the entrance window and the scanning mirror to the range-finding unit. The range-finding unit carries out triangulation using the distance between a laser source and a photodetector therein, and the angle of incidence and the angle of the received laser beam.

Abstract: A single crystal pulling device is composed of a cylindrical pulling furnace, a crucible disposed in the pulling furnace in which a single crystal material for a semiconductor is poured, a cylindrical vacuum vessel coaxially disposed around the pulling furnace, and a superconducting magnet composed of a plurality pairs of coils arranged inside the vacuum vessel so as to generate magnetic field. The superconducting coils are arranged on the same horizontal plane of the cylindrical vacuum vessel, and each of the paired superconducting coils includes coils set so as to oppose to each other with respect to a central axis of the cylindrical vacuum vessel so that one coil of one pair of coils and one coil of another pair of coils adjacent to that one pair of coils constitutes a set angle, directing towards the inside of the cylindrical vessel, in a range of 100° to 130°.

Abstract: The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in gaseous form and is deposited on said substrate. The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefore provides that the preheated carrier gas washes through the starting material from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated container walls.

Abstract: A method and apparatus for controlling the quenching rate of a monocrystalline ingot pulled from a melt by adjusting one or more post growth processing parameter. A temperature model generates a temperature profile that represents the surface temperature along the length of the ingot at the instant it is pulled from the melt. A first temperature at a particular location along the length of the crystal is determined from the temperature profile. A temperature sensor senses a second temperature at the same particular location. A PLC calculates a quenching rate of the crystal as a function of the first temperature and the second temperature. The PLC generates an error between a target quenching rate and a calculated quenching rate, and one or more post growth process parameters are adjusted as function of the error signal to optimize the quenching rate.

Abstract: Disclosed are an apparatus for manufacturing GaN substrate and a manufacturing method thereof enabling to prevent micro-cracks or bending of a GaN substrate by separating a substrate and a GaN layer from each other after growing the GaN layer on the substrate in the same chamber. The present invention includes a chamber for loading a substrate therein, a heating means heating the chamber, a Ga boat installed inside the chamber to receive a Ga molecule producing material, an injection pipe injecting a nitrogen molecule producing gas in the chamber, the nitrogen molecule producing gas reacting chemically on the Ga molecule producing material to form a GaN layer on the substrate, and a transparent window at a circumference of the chamber to apply a laser beam to the substrate.

Abstract: A microfluidic device comprising: a substrate shaped so as to provide the device with an axis of rotation about which the device may be rotated; and a plurality of microvolumes at least partially defined by the substrate, each microvolume comprising a first submicrovolume and a second submicrovolume that is in fluid communication with the first submicrovolume when the device is rotated, the plurality of microvolumes being arranged in the device such that fluid in the first submicrovolumes of multiple of the microvolumes is transported to the second submicrovolumes of the associated microvolumes when the device is rotated about the rotational axis.

Abstract: A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.

Abstract: A biological crystal formation screening apparatus uses an x-ray diffraction technique to analyze the sample containers of a sample tray for the presence of crystal formation. An x-ray source is directed toward a sample under investigation, and a two-dimensional x-ray detector is located to receive any diffracted x-ray energy. A positioning apparatus allows the different sample containers of a tray to be sequentially aligned with the source and detector, allowing each to be examined. The sample container is arranged such that a sample is located relative to the well solution so that the x-ray beam is directed to the sample without being incident on the well solution.

Abstract: A matrix mixing robot includes a plurality of precision pumps (such as precision syringe pumps), a distributor and a processor system. Each pump, under the control of the processor system, draws an associated stock solution from a stock solution source, and pumps the drawn stock solution out through an outlet. The distributor, also under the control of the processor system, directs a stock solution from a particular pump outlet to a selected solution receptacle. A multi-port distribution valve may be associated with each precision pump. Each valve, under control of the processor system, can connect its associated pump to one the pump's inlets or outlets.

Abstract: A microfluidic device is provided that comprises: a substrate; one or more microvolumes at least partially defined by the substrate, each microvolume comprising a first submicrovolume, a second submicrovolume where fluid in the first submicrovolume is transported to the second submicrovolume when the device is rotated about a first rotational axis, and a third submicrovolume where fluid in the first submicrovolume is transported to the third submicrovolume when the device is rotated about a second, different rotational axis.

Abstract: A microfluidic method is provided that comprises: delivering first and second fluids to a lumen of a microfluidic device such that the first and second fluids flow adjacent to each other within the lumen without mixing except for diffusion at an interface between the first and second fluids, wherein the first fluid is different than the second fluid.

Abstract: A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant solution inside the site with an air gap between the screening solution and the precipitant solution. In a preferred embodiment, the film is transparent. In another preferred embodiment, the plate comprises a second transparent film supported by a lattice structure and the precipitant solution is sandwiched between the two films.

Abstract: A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.

Abstract: A microfluidic method is provided that comprises: taking a microfluidic device comprising a plurality of microvolumes; and causing movement of material in a same manner within the plurality of microvolumes by applying centrifugal forces to the material.

Abstract: The present invention is directed to a crystallization apparatus including an illumination system to illuminate a phase shift mask, which converts a light beam from the illumination system into a light beam that has a light intensity distribution of an inverse peak pattern having a minimum intensity in an area corresponding to a phase shift portion of the phase shift mask. The crystallization apparatus further includes an optical member to form on a predetermined plane a light intensity distribution of a concave pattern, which has a light intensity that is minimum in an area corresponding to the phase shift portion and increases toward the circumference of that area based on the light from the illumination system, and an image-forming optical system to set a surface of the polycrystalline semiconductor film or the amorphous semiconductor film or its conjugate plane and the predetermined plane to an optical conjugate relationship.

Abstract: A crucible has first member and second cylindrical body, and is disposed in a lower chamber. The fist member is disposed in the second cylindrical body so as to define a gas flow path formed therebetween as a gap. A pedestal is disposed inside the first member. A seed crystal is fixed to the pedestal. SiC single crystals are formed on the pedestal by introducing a mixture gas through an inlet conduit. During growth of the SiC single crystals, conductance in introduction of the mixture gas into the crucible is larger than that in exhaust of the mixture gas, so that pressure of the mixture gas in the crucible is larger than that of the mixture gas after exhausted from the crucible.

Abstract: A pattern for monitoring epitaxial layer washout is disclosed. The pattern includes first and second sub-patterns. The first sub-pattern has a shape and defines one or more minimum dimensions. Obfuscation of the first sub-pattern means that epitaxial washout has occurred at least for dimensions equal to or less than the minimum dimensions. The second sub-pattern has the same shape of the first sub-pattern, but defines one or more maximum dimensions. Obfuscation of the second sub-pattern means that epitaxial washout has occurred for dimensions equal to or less than the maximum dimensions. The sub-patterns can include a pair of separated features, such as a pair of interlocking but separated L-shaped features, the separation of which defines the dimensions of the sub-patterns.

Abstract: A microfluidic method comprising: taking a microfluidic device comprising a substrate, and a plurality of microvolumes at least partially defined by the substrate, each microvolume comprising a first submicrovolume and a second submicrovolume in fluid communication with the first submicrovolume; adding fluids to the first submicrovolumes; and applying a centrifugal force to the device to cause a same volume of fluid to be transported to the second microvolumes from the first submicrovolumes.

Abstract: A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on said piece of the glass, and measuring a vibration cycle of the silicon melt. Moreover, a silica glass crucible not causing the vibration at the surface of the silicon melt held in the silica glass crucible is also provided, wherein the vibration cycle of a silica glass of a side wall of the crucible is controlled at more than ⅙ seconds.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: A control method for use with a crystal puller for growing a monocrystalline semiconductor crystal from a melt according to the Czochralski process. The method includes defining an initial interval of time for observing growth of the crystal being pulled from the melt and determining diameter variations occurring during the interval. Based on the variations in the crystal diameter, the method defines a function r(t). By performing a best fit routine on the function r(t), the method deduces current values of crystal radius rf, meniscus height hf and growth rate Vgf at the end of the observation interval. The method also includes determining pull rate and heater power parameters as a function of the growth rate to control the crystal puller to minimize variations in both crystal diameter and growth rate during subsequent growth of the crystal.

Abstract: Disclosed is a mask for evaluating selective epitaxial growth process. The disclosed mask comprises a mask pattern for resistance measurement to measure sheet resistance of grown single crystal silicon in a first area, a mask pattern for selectivity evaluation to evaluate selectivity of single crystal silicon growth in a second area diagonal to the first area, mask patterns for facet generation evaluation, having different shapes, to evaluate facet generation of grown single crystal silicon in a third area, mask patterns for loading effect evaluation, having different shapes, to evaluate growth of single crystal silicon by loading effect in the upper part of a fourth area and a mask pattern for uniformity evaluation to evaluate uniformity of grown single crystal silicon in the lower part of the pattern for loading effect evaluation in the fourth area.

Abstract: A method and apparatus for dynamically controlling the crystallization of molecules including a crystallization chamber (14) or chambers for holding molecules in a precipitant solution, one or more precipitant solution reservoirs (16, 18), communication passages (17, 19) respectively coupling the crystallization chamber(s) with each of the precipitant solution reservoirs, and transfer mechanisms (20, 21, 22, 24, 26, 28) configured to respectively transfer precipitant solution between each of the precipitant solution reservoirs and the crystallization chamber(s). The transfer mechanisms are interlocked to maintain a constant volume of precipitant solution in the crystallization chamber(s). Precipitant solutions of different concentrations are transferred into and out of the crystallization chamber(s) to adjust the concentration of precipitant in the crystallization chamber(s) to achieve precise control of the crystallization process.

Abstract: Systems and methods are described that allow the high-throughput preparation, processing, and study of arrays of samples, each of which comprises at least one compound. Particular embodiments of the invention allow a large number of experiments to be performed in parallel on samples that comprised of one or more compounds on the milligram or microgram quantities of compounds. Other embodiments of the invention encompass methods and devices for the rapid screening of the results of such experiments, as well as methods and devices for rapidly determining whether or not similarities exist among groups of samples in an array. Particular embodiments of the invention encompass methods and devices for the high-throughput preparation of different forms of compounds (e.g., different crystalline forms), for the discovery of new forms of old compounds, and for the discovery of new methods of producing such forms.

Abstract: A melt level detector is provided for detecting the melt level of a CZ furnace by triangulation. The laser beam (2) from a laser source (1) is moved in radial directions of a crucible (14) in the CZ furnace to find a location where a photodetector system (5, 7) can receive the reflection (4) from the melt level (3), and the laser beam (2) is fixed at the location. Since the measurements thus take place within an extremely small angular range of the laser beam, the melt level (3) can be detected with little effect of noise on the melt level (3) while eliminating complexity of the device.

Abstract: A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per square centimeter, and a secondary phase inclusion density of less than 10 per cubic centimeter. As disclosed, a SiC source and a SiC seed crystal of the desired polytype are co-located within a crucible, the growth zone being defined by the substantially parallel surfaces of the source and the seed in combination with the sidewalls of the crucible. Prior to reaching the growth temperature, the crucible is evacuated and sealed, either directly or through the use of a secondary container housing the crucible. The crucible is comprised of tantalum or niobium that has been specially treated.

Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C.

Abstract: A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per square centimeter, and a secondary phase inclusion density of less than 10 per cubic centimeter. As disclosed, a SiC source and a SiC seed crystal of the desired polytype are co-located within a crucible, the growth zone being defined by the substantially parallel surfaces of the source and the seed in combination with the sidewalls of the crucible. Prior to reaching the growth temperature, the crucible is evacuated and sealed, either directly or through the use of a secondary container housing the crucible. The crucible is comprised of tantalum or niobium that has been specially treated.

Abstract: A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per square centimeter, and a secondary phase inclusion density of less than 10 per cubic centimeter. As disclosed, a SiC source and a SiC seed crystal of the desired polytype are co-located within a crucible, the growth zone being defined by the substantially parallel surfaces of the source and the seed in combination with the sidewalls of the crucible. Prior to reaching the growth temperature, the crucible is evacuated and sealed, either directly or through the use of a secondary container housing the crucible. The crucible is comprised of tantalum or niobium that has been specially treated.

Abstract: Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.

Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.

Abstract: A blocking device for remote, selective blocking of a cold stream used in a protein crystal annealing process during X-ray protein crystallography includes a blocking member adapted to be selectively moved between at least a blocking position where the blocking member blocks the cold stream and a non-blocking position where the blocking member does not block the cold stream, and an actuation mechanism adapted to impart movement to the blocking member to cause the blocking member to be selectively moved between at least the blocking position and the non-blocking position.

Abstract: Thin films of single crystal-like materials are made by using flow-through ion beam deposition during specific substrate rotation around an axis in a clocking action. The substrate is quickly rotated to a selected deposition position, paused in the deposition position for ionized material to be deposited, then quickly rotated to the next selected deposition position. The clocking motion can be achieved by use of a lobed cam on the spindle with which the substrate is rotated or by stopping and starting a stepper motor at long and short intervals. Other symmetries can be programmed into the process, allowing virtually any oriented inorganic crystal to be grown on the substrate surface.

Abstract: An apparatus for pulling up a strip of semiconductor crystal continuously from a crucible with a pair of endless belts has a position control device for automatically adjusting a transverse position of the strip of semiconductor crystal. The position control device is disposed in a path for pulling up the strip of semiconductor crystal from the crucible. The position control device comprises a pair of blocks disposed one on each side of the path transversely of the strip of semiconductor crystal and movable transversely of the strip of semiconductor crystal, and a pair of position sensors mounted respectively on the blocks for detecting respective edges of the strip of semiconductor crystal. The blocks have respective side faces for adjusting a direction in which the strip of semiconductor crystal is pulled up, by contacting the respective edges of the strip of semiconductor crystal.

Abstract: Crystal growth apparatus comprising a crucible for containing a supply of molten material from which the crystal may be grown and first reflection means for receiving radiation directed along an input path and reflecting radiation towards second reflection means, whereby the second reflection means reflect output radiation along an output path. The first and second reflection means are arranged at or in close proximity with the surface of the molten material such that during crystal growth they maintain a substantially constant position relative to the surface of the molten material. The apparatus may comprise support means for supporting the first and second reflection means, whereby the support means are arranged to float on the molten material. The apparatus may be a single crucible apparatus or a double crucible apparatus.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a characteristic of a layer formed on a specimen by a deposition process. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process including controlling growth conditions, such as growth velocity, v, instantaneous axial temperature gradient, G0, and the cooling rate, within a range of temperatures at which silicon self-interstitials are mobile, in order to prevent the formation of these agglomerated defects. The control of G0 is accomplished by controlling heat transfer at the melt/solid interface.

Abstract: A fully automated, high output robotic station for the crystallization of proteins and other biopolymers via the sitting drop vapor diffusion and micro-batch methods. This station performs microplate feeding, liquid aspiration, dilution, and dispensing, as well as microplate sealing and storage into a temperature controlled hotel. All functions are microprocessor controlled. The operator designs the process via graphical user interface, after which the station executes the process automatically to completion.