Abstract: An image forming apparatus includes a cutting part cutting a medium, a transfer part arranged on a downstream side of the cutting part in a carrying direction and transfers a developer image to the medium; a flexure forming part having a guide part and forms a flexure of the medium by bending the medium between the cutting part and the transfer part in the carrying direction; and an opposing part that is arranged opposing the flexure forming part via a carrying path through which the medium is carried, wherein the guide part performs a retreat movement either before or after the cutting part starts to cut the medium, wherein the retreat movement is a movement of the guide part in which the guide part moves in a direction away from the opposing part.

Abstract: The food breading device is configured for use with a target foodstuff and a coating foodstuff. The coating foodstuff has a bulk solid phase. The food breading device coats the coating foodstuff on the target foodstuff. The food breading device includes a containment shell, a paddle structure, and a timing device. The timing device attaches to the containment shell. The paddle structure mounts in the containment shell. The target foodstuff is placed inside the containment shell. The paddle structure is a rotating structure. The paddle structure rotates such that the paddle structure changes the position of the target foodstuff within the containment shell. The rotation of the paddle structure further releases the coating foodstuff onto the target foodstuff.

Abstract: A medium cutting device according to an embodiment may include: a fixed blade provided on one side with respect to a conveyance path in which a medium is conveyed in a thickness direction of the medium orthogonal to a surface of the medium and including a cutting edge thereof; a rotary blade provided on the other side with respect to the conveyance path in the thickness direction, and including a cutting edge thereof, wherein the rotary blade is configured to be rotated in a rotation direction so that the cutting edge of the rotary blade passes by the cutting edge of the fixed blade to cut at a cutting position the medium being conveyed; and a guide member provided upstream of the cutting position in a conveyance direction of the medium and configured to bias the medium toward the rotary blade side.

Abstract: Disclosed is a substrate processing system including a substrate processing apparatus configured to execute a predetermined processing on a substrate accommodated in a processing container, an input receiving unit configured to receive an input of a set value for executing the predetermined processing, and a determination unit configured to determine whether or not the set value received by the input receiving unit is valid based on the set value received by the input receiving unit and a characteristic of the substrate processing apparatus.

Abstract: A coating apparatus includes: a slit nozzle including a retention chamber that retains the coating material; a moving mechanism that moves the slit nozzle; a pressure regulation unit that regulates a pressure inside the retention chamber; and a control unit that controls the moving mechanism and the pressure regulation unit to relatively move the slit nozzle with respect to the substrate while changing the pressure inside the retention chamber toward an atmospheric pressure from a negative pressure, wherein the control unit is configured to control the pressure regulation unit so that a change in the pressure inside the retention chamber in a start zone including a coating start position and an end zone including a coating end position becomes slower than a change in the pressure inside the retention chamber in a middle zone except the start zone and the end zone.

Abstract: A coating apparatus includes: a slit nozzle including a retention chamber that retains the coating material; a moving mechanism that moves the slit nozzle; a pressure regulation unit that regulates a pressure inside the retention chamber; and a control unit that controls the moving mechanism and the pressure regulation unit to relatively move the slit nozzle with respect to the substrate while changing the pressure inside the retention chamber toward an atmospheric pressure from a negative pressure, wherein the control unit is configured to control the pressure regulation unit so that a change in the pressure inside the retention chamber in a start zone including a coating start position and an end zone including a coating end position becomes slower than a change in the pressure inside the retention chamber in a middle zone except the start zone and the end zone.

Abstract: A system for processing a substrate include a processing chamber including a pedestal to support a substrate and a controller configured to a) supply precursor to the processing chamber; b) purge the processing chamber; c) perform radio frequency (RF) plasma activation; d) purge the processing chamber; and e) prior to purging the processing chamber in at least one of (b) or (d), set a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (a) or (c) for a first predetermined period.

Abstract: Provided are a deposition data processing apparatus, an apparatus and a method for manufacturing an organic EL device, which make it possible to check deposition states of constituent layers of each of organic EL elements that are continuously formed on a substrate being conveyed. The deposition data processing apparatus includes a scanning section configured to scan at least two of a plurality of constituent layers that constitute each of the organic EL elements; and a processor configured to accumulate data of the constituent layers scanned by the scanning section at a specific position in a longitudinal direction of the substrate as data of a specific one of the organic EL elements.

Abstract: A material deposition system includes a frame, a support coupled to the frame to support an electronic substrate during a deposit operation, a gantry coupled to the frame, and a deposition head coupled to the gantry. The deposition head is movable over the support by movement of the gantry. The deposition head includes a chamber to hold material, an actuator to push a volume of material out of the chamber, a needle extending from the chamber and terminating in a needle orifice, and at least two air jets located on opposite sides of the needle orifice. A desired volume of material is formed at the needle orifice in response to the actuator, and each of the at least two air jets produce a timed pulse of air to create a micro-droplet from the desired volume and to accelerate the micro-droplet to high velocity.

Abstract: A method of method of coating powdered medical agent onto a carrier particle for use in a dry powder inhaler may include applying ultrasonic energy to agglomerated powdered medical agent to deaggregate and aerosolize particles of the medical agent into particles having a desired average particle size, and coating at least one carrier particle with a desired amount of the deaggregated and aerosolized particles of the medical agent.

Abstract: A drug coating apparatus (100) for coating an implant (206) with a drug is described. The drug coating apparatus (100) includes a holding unit (102) having a top collet (202-1) for holding the implant (206) from a top end of the implant (206), and a bottom collet (202-2) to hold the implant (206) from a bottom end of the implant (206). The drug coating apparatus (100) includes at least one rotary drive (115) coupled to the holding unit (102) for rotating the top collet (202-1), the bottom collet (202-2) and the implant (206), and includes a spraying unit (104) to spray-coat the drug on the implant (206).

Abstract: In an apparatus for treating a gas stream, a plasma generator comprises an electrode for energising a source gas to generate a plasma flare by application of a high voltage. An inlet allows the gas stream into the apparatus and directs it into the generated plasma. A scraper is fitted for reciprocating movement from a first position to a second position for scraping a surface to remove solid deposits accumulated on the surface.

Abstract: Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber.

Abstract: A system for controlling a boundary of spreading liquid adhesive on a surface is disclosed. The system includes one or more ultra-violet (UV) sources configurable to emit UV light onto the liquid adhesive; and a control circuit coupled to the one or more UV sources and configured to control the one or more UV sources to selectively apply the UV light at selected locations on the liquid adhesive to cure the adhesive and prevent its further spread at those locations.

Abstract: A processing apparatus includes a processing chamber configured to accommodate a target object to be processed, gas supply paths provided in a corresponding relationship with the kinds of process gases supplied into the processing chamber, and valves respectively arranged in the gas supply paths to open and close the gas supply paths. The processing apparatus further includes valve drive units configured to independently drive the valves, sensor units configured to independently monitor opening and closing operations of the valves, and a control unit configured to determine operation statuses of the valves based on valve opening and closing drive signals transmitted to the valve drive units and/or valve opening and closing detection signals transmitted from the sensor units.

Abstract: A mole delivery system and method provide pulses of known molar quantities as a function of the time duration of each pulse, which in turn is derived as a function of the ideal gas law. In one embodiment of the system, the system comprises: a chamber of known volume and controlled and known temperature; a pressure sensor to measure the pressure in the chamber; an outlet valve to a process tool; an inlet valve to charge the chamber with the delivery gas; and a control system configured and arranged so as to control the operation of the outlet valve, control the amount of each gas pulse by controlling the timing of the valve to the process tool.

Abstract: A substrate processing method which is capable of enhancing productivity in manufacturing product substrates. In process chambers of an etching apparatus, etching is carried out on a substrate as an object to be processed, and dummy processing is carried out on at least one non-product substrate before execution of the etching. A host computer determines whether or not the dummy processing is to be executed. The host computer determines whether or not the interior of each of the process chambers and is in a stable state, and omits the execution of the dummy processing when it is determined that it is in the stable state.

Abstract: A substrate treating system includes a coating apparatus having a resist coating unit, an exposing apparatus having an exposing machine and a heat-treating unit, and a controller for controlling the resist coating unit, exposing machine and heat-treating unit. The controller coordinates schedules of treatment in the coating apparatus and exposing apparatus, such that the coating apparatus can operate efficiently despite an increase in the processing time of the exposing machine.

Abstract: A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.

Abstract: An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.

Abstract: A semiconductor processing apparatus (1), comprising: a gas supply system (2), comprising at least one gas supply unit (100) including: a process gas source (110); a gas distribution manifold (150), including an annular gas distribution conduit (152) provided with an inlet (154) and a plurality of valved outlets (156a-c); a gas supply conduit (130, 132) fluidly connecting the process gas source (110) to the inlet (154) of the gas distribution manifold (150); a plurality of reactors (4a-c), each fluidly connected to a respective valved outlet (156a-c) of the gas distribution manifold (150), such that process gas from the process gas source (110) of the at least one gas supply unit (100) is selectively suppliable to a respective reactor of said plurality of reactors (4a-c) via the gas supply conduit (130, 132), the gas distribution manifold (150), and a respective valved outlet (156a-c).

Abstract: Coating apparatus including a spray to provide a coating, a controller to control the spray to vary a spraying width of the spray, and a first roller to receive the coating and to smear the coating on a substrate.

Abstract: An apparatus for coating a stent comprises a coating solution reservoir, a stent support for carrying a stent adjacent the reservoir, transducers for generating waves through the coating solution, and a controller that controls timing at which the transducers are powered in order to eject a droplet of the coating solution.

Abstract: Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.

Abstract: Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon. Particulate may be provided to a heated tray or pan, which is oscillated or vibrated to provide a reaction surface. The particulate migrates downward in the tray or pan and the reactant product migrates upward in the tray or pan as the reactant product reaches a desired state. Exhausted gases may be recycled.

Abstract: A moveable dispenser assembly including is shown. The dispenser includes a reservoir having bonding adhesive therein including particles and a liquid carrier. The dispenser is moved to provide agitation to the dispenser for mixing the bonding adhesive into a homogeneous mixture of particles and the liquid carrier. An opening at an end of said dispenser dispenses the bonding adhesive onto a bonding location on the workpiece without removing the dispenser from the die attach apparatus. A one controller for sends a control signal that triggers moving of said moveable dispenser assembly for mixing said bonding adhesive before dispensing said volume of bonding adhesive onto said surface of said workpiece. The controller includes logic to control of movements such as oscillations to keep the bonding adhesive well mixed based on a comparing a parameter to be in a predetermined limit or range.

Abstract: A solar cell extrusion printing system that uses a micro-extrusion printhead to print longer central gridlines and one or more pairs of shorter “side” gridlines such that end points of the gridline sets form step patterns on an octagonal (pseudo-square) substrate. The printhead includes a set of central nozzles that receive ink from a first valve by way of a first flow channel to print the longer central gridlines, and additional sets of side nozzles that receive ink from additional valves by way of additional flow channels to print the shorter “side” gridlines. The central nozzles have outlet orifices that offset in the process direction from side outlet orifices of the side nozzles. A start signal is simultaneously sent to the valves such that ink is substantially simultaneously extruded through both the central and side orifices, whereby the extruded ink produces gridline endpoints having the desired step pattern.

Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.

Abstract: A processing apparatus includes a processing chamber configured to accommodate a target object to be processed, gas supply paths provided in a corresponding relationship with the kinds of process gases supplied into the processing chamber, and valves respectively arranged in the gas supply paths to open and close the gas supply paths. The processing apparatus further includes valve drive units configured to independently drive the valves, sensor units configured to independently monitor opening and closing operations of the valves, and a control unit configured to determine operation statuses of the valves based on valve opening and closing drive signals transmitted to the valve drive units and/or valve opening and closing detection signals transmitted from the sensor units.

Abstract: An operating method is disclosed for a processing system that comprises multiple process modules each adapted to perform substantially the same process upon a substrate. During process module conditioning as a preparatory step for executing a required process recipe, each time one process module completes conditioning, successive transfer of unprocessed substrates from a cassette to the process module is started on an associated substrate transfer route, and successive processes that use the process module are started for the unprocessed substrates. The processing system can be operated efficiently, even if the nonuniformity of the conditioning time required exists between process modules of the same specifications.

Abstract: A coating powder feed method, coating powder feeding device, electrostatic powder spraycoating apparatus containing such a coating powder feeding device. The invention includes a dense phase powder pump fitted with at least one feed chamber. A control signal to create a partial vacuum in the feed chamber is generated no earlier than simultaneously with, preferably by a predetermined delay time after, a control signal opening a powder intake valve of the feed chamber, as a result of which the beginning of partial vacuum buildup in the feed chamber shall take place no earlier than simultaneously with the initial opening of the powder intake valve or by a defined time delay after the opening of the powder intake valve.

Abstract: A system for controlling a boundary of spreading liquid adhesive on a surface is disclosed. The system includes one or more ultra-violet (UV) sources configurable to emit UV light onto the liquid adhesive; and a control circuit coupled to the one or more UV sources and configured to control the one or more UV sources to selectively apply the UV light at selected locations on the liquid adhesive to cure the adhesive and prevent its further spread at those locations.

Abstract: An apparatus for coating a stent comprises a coating solution reservoir, a stent support for carrying a stent adjacent the reservoir, transducers for generating waves through the coating solution, and a controller that controls timing at which the transducers are powered in order to eject a droplet of the coating solution.

Abstract: A wind turbine tower cleaning or coating apparatus is provided. The apparatus includes a frame which circumferentially extends at least partially around a wind turbine tower. A separator structure can be attached to the frame and extends between the frame and the wind turbine tower to position the frame at a predetermined distance away from the wind turbine tower. The separator structure can also include an attachment end which is attached to the frame and a slidabe end positionable near the wind turbine tower. A slider can be attached to the slidabe end of the separator structure and can slide on the surface of the wind turbine tower as the frame is raised and lowered on the wind turbine tower. A frame lift device can raise and lower the frame on the wind turbine tower. A plurality of sprayers can be positioned circumferentially along the frame and configured to selectively spray fluid onto the wind turbine tower.

Abstract: A substrate processing apparatus includes a mounting stand, a cover opening and closing unit, a substrate checking unit, a substrate transfer mechanism, a substrate processing unit, and a controller. While the substrate processing unit is processing a substrate within a first substrate accommodation container mounted on the mounting stand, when a second substrate accommodation container is mounted on the mounting stand, the controller provides control to open the cover of a second substrate accommodation container and check a substrate within the second substrate accommodation container by means of the substrate checking unit, and when the substrate checking is terminated, the controller provides control to close the cover of the second substrate accommodation container.

Abstract: A semiconductor manufacturing apparatus includes: a plurality of reaction chambers into which wafers are introduced and deposition process is performed; a material gas supply mechanism that includes a plurality of material gas supply lines that respectively supply a material gas to the plurality of reaction chambers and a flow rate control mechanism that controls a flow rate of the marital gas in the material gas supply lines; a carrier gas supply mechanism that includes a plurality of carrier gas supply lines that respectively supplies a carrier gas into the plurality of reaction chambers; and a material gas switching mechanism that intermittently opens and closes the plurality of material gas supply lines respectively so that at least one of the plurality of material gas supply lines comes to be in an opened state at a same time, and sequentially switches the reaction chamber to which the material gas is supplied.

Abstract: A method of method of coating powdered medical agent onto a carrier particle for use in a dry powder inhaler may include applying ultrasonic energy to agglomerated powdered medical agent to deaggregate and aerosolize particles of the medical agent into particles having a desired average particle size, and coating at least one carrier particle with a desired amount of the deaggregated and aerosolized particles of the medical agent.

Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract: A substrate processing system including a cleaning equipment; a resist coating equipment forming a resist layer on a surface of a substrate; an edge exposure equipment that exposes to light an edge portion of the resist layer formed on a peripheral edge of the substrate; a substrate transport mechanism; and a system controller. The system controller includes a waiting time monitor and a process controller. The waiting time monitor monitors a waiting time that is a time interval between the formation of the resist layer and start of the exposure of the edge portion of the resist layer. The process controller causes the substrate transport mechanism to transport the substrate into the cleaning equipment when the monitored waiting time exceeds a prescribed limit, removing the resist layer from the substrate. The process controller then causes the substrate transport mechanism to transport the substrate into the resist coating equipment.

Abstract: Disclosed is a substrate processing apparatus, including: a processing space to provide a space in which a substrate is to be processed; a heating member to heat the processing space; a gas supply member to supply at least first and second processing gases to the processing space; an exhaust member to exhaust an atmosphere in the processing space; and a control member to control at least the gas supply member and the exhaust member such that supply and exhaust of the first and second processing gases are alternately repeated a plurality of times so that the first and second processing gases are not mixed with each other in the processing space when forming a desired film on the substrate, and both the first and second processing gases are supplied to the processing space when coating a surface of an inner wall of the processing space with a desired film.

Abstract: The present invention provides a sealant coating device having a sealant receiving chamber and a nozzle formed on a lower portion of the sealant receiving chamber. The sealant coating device further has a heating device, and the heating device is installed around the sealant receiving chamber for heating a sealant material filled in the sealant receiving chamber. The present invention further provides a dispensing method of the sealant coating device, which has the following steps of: obtaining time during the sealant material stays in the sealant receiving chamber; calculating a target temperature of the sealant material according to the obtained time and a desired sealant viscosity value; heating the sealant material to the target temperature. The advantages of the present invention are to use the heating device to lower the sealant viscosity based on the characteristic of the sealant viscosity varied with the temperature.

Abstract: A droplet discharge apparatus is configured to move a droplet discharge head and a weight measurement unit relative to each other so that the droplet discharge head is placed in a position that faces the weight measurement unit by controlling a weight measurement unit movement part and a weight measurement unit secondary movement. The droplet discharge apparatus is also configured to control the droplet discharge head to perform a weight measurement discharge for measuring a weight of the liquid material discharged from the droplet discharge head during the feed/removal period, which includes a period for feeding and removing the substrate from the stage, and a period in which the stage is moved in relative fashion by the stage movement unit for performing feeding and removal operations.

Abstract: An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.

Abstract: A process gas supply cycle pattern that will adversely affect the result of processing is changed beforehand. Based on information supplied from a setting input section, a pattern computation section obtains the result of computation of a process gas supply cycle pattern that includes a rotation cycle of a substrate rotation mechanism, a supply cycle of a process gas, a supply time of the process gas, and a supply count of the process gas. Based on information supplied from the setting input section, a simulator simulates the shape of a supply region of the process gas to be supplied onto a substrate. A comparison section compares the result of computation of the process gas supply cycle pattern determined by the pattern computation section against the result of referencing of a process gas supply cycle pattern that adversely affects the result of processing and is obtained from a storage section.

Abstract: A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.

Abstract: A transfer flow is produced in accordance with a process recipe of a process to be carried out. In the transfer flow, a type of modules listed in accordance with a substrate transfer order is associated with a necessary staying time from when the substrate is transferred into a module by a substrate transfer unit to when the substrate is ready to be transferred back to the substrate transfer unit after the corresponding process is finished. A cycle limiting time is determined to be the longest necessary transfer cycle time among those obtained by dividing the necessary staying time by the number of the modules mounted in the coater/developer. The number of the modules to be used is determined to be a value obtained by dividing the necessary staying time by the cycle limiting time or a nearest integer to which the value is raised.

Abstract: A mole delivery system and method provide pulses of known molar quantities as a function of the time duration of each pulse, which in turn is derived as a function of the ideal gas law. In one embodiment of the system, the system comprises: a chamber of known volume and controlled and known temperature; a pressure sensor to measure the pressure in the chamber; an outlet valve to a process tool; an inlet valve to charge the chamber with the delivery gas; and a control system configured and arranged so as to control the operation of the outlet valve, control the amount of each gas pulse by controlling the timing of the valve to the process tool.

Abstract: After a solvent is discharged onto a substrate in a period from a time point t0 to a time point t1, rotation of the substrate is started at a time point t2. A resist liquid is discharged onto a center portion of a target surface of the substrate at a time point t3. A rotation speed of the substrate starts to decrease at a time point t4, and attains a first speed after a certain period of time. The discharge of the resist liquid is stopped at a time point t5. The rotation of the substrate is accelerated in a period from a time point t6 to a time point t7, and the rotation speed of the substrate attains a second speed at the time point t7. The rotation of the substrate is decelerated in a period from the time point t7 to a time point t8, and the rotation speed of the substrate attains a third speed at the time point t8.

Abstract: Embodiments of the present system and method are useful for chemical deposition, particularly continuous deposition of thin films. Disclosed systems typically comprise a micromixer and a microchannel applicator. A deposition material or materials is applied to a substrate, such as an oxidized silicon substrate, a flexible substrate useful for forming flexible devices, such as flexible transistors, and combinations of different substrates. Uniform and highly oriented surface morphologies of films deposited using disclosed embodiments are clearly improved compared to films deposited by a conventional batch process. The process can be used to tailor the composition and morphology of the material deposited on a substrate. The present process can be used at low temperatures as a post-deposition, high-temperature annealing step is obviated.