Abstract: Disclosed is a powder atomic layer deposition equipment with a quick release function, comprising a vacuum chamber, a shaft sealing device, and a driving unit connected to the shaft sealing device. The vacuum chamber is connected to the shaft sealing device, and an enclosed space is formed between the vacuum chamber and the shaft sealing device. At least one air extraction line is located in the shaft sealing device and fluidly connected to the enclosed space, the air extraction line being used in pumping gas out from the enclosed space to fix the vacuum chamber to the shaft sealing device so that the drive unit rotates the vacuum chamber via the shaft sealing device to facilitate the formation of a uniform thin film on powder surface. When the pumping stops, the vacuum chamber can be quickly released from the shaft sealing device to improve the process efficiency and convenience of use.

Abstract: A particle coating method includes placing magnetic particles in a vessel, fixing the magnetic particles by a magnetic force caused by a magnetic field generated in the vessel, and forming a coating film on surfaces of the magnetic particles by an atomic layer deposition method. Further, the method preferably includes forming a coating film on surfaces of the magnetic particles by an atomic layer deposition method in a state where the magnetic particles are fixed by the magnetic force in a first direction, thereby obtaining coated magnetic particles, and forming a coating film on surfaces of the coated magnetic particles in a state where the coated magnetic particles are fixed by the magnetic force in a second direction different from the first direction.

Abstract: A detachable atomic layer deposition apparatus for powders is disclosed, which includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to the shaft sealing device. The vacuum chamber is fixed to one end of the shaft sealing device via at least one fixing member. The driving unit drives the vacuum chamber to rotate via the shaft sealing device to agitate the powders in a reaction space of the vacuum chamber to facilitate the formation of thin films with uniform thickness on the surface of the powders. In addition, the vacuum chamber can be removed from the shaft sealing device for users to take out the powders from the vacuum chamber and clean the vacuum chamber, thereby improving the convenience in usage.

Abstract: An atomic layer deposition apparatus for coating particles is disclosed. The atomic layer deposition apparatus includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to and drives the vacuum chamber to rotate through the shaft sealing device. The vacuum chamber includes a reaction space for accommodating a plurality of particles, wherein the reaction space has a polygonal columnar shape or a wavy circular columnar shape. An air extraction line and an air intake line are fluidly connected to the vacuum chamber, and the air intake line is used to transport a precursor gas and a non-reactive gas to the reaction space. Through the special shape of the reaction space together with the non-reactive gas, the particles in the reaction space can be effectively stirred to form a thin film with a uniform thickness on the surface of each particle.

Abstract: Manufacturing apparatus, systems and method of making silicon (Si) nanowires on carbon based powders, such as graphite, that may be used as anodes in lithium ion batteries are provided. In some embodiments, an inventive tumbler reactor and chemical vapor deposition (CVD) system and method for growing silicon nanowires on carbon based powders in scaled up quantities to provide production scale anodes for the battery industry are described.

Abstract: A method for forming a semiconductor arrangement is provided. The method includes forming a patterned photoresist over a top surface of a substrate. The method includes doping a first portion of the substrate using the patterned photoresist. The method includes removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist. The method includes treating the substrate with nitrous oxide to remove the fluoride residue.

Abstract: A device for synthesising core-shell nanoparticles by laser pyrolysis is provided. The device includes a reactor having a first chamber for synthesising the core, which is provided with an inlet for a core precursor; a second chamber for synthesising the shell, which is provided with an inlet for a shell precursor; and at least one communication channel between the two chambers for transmitting the core of the nanoparticles to be formed in the first chamber towards the second chamber. The device also includes an optical device for illuminating each of the two chambers, and at least one laser capable of emitting a laser beam intended to interact with the precursors in order to form the core and the shell.

Abstract: A method and system for coating metallic powder particles is provided. The method includes: disposing an amount of metallic powder particulates within a fluidizing reactor; removing moisture adhered to the powder particles disposed within the reactor using a working gas; coating the powder particles disposed within the reactor using a precursor gas; and purging the precursor gas from the reactor using the working gas.

Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.

Abstract: Modification of pigments may be performed using atomic layer deposition (ALD) to provide custom-tailored thermal protection characteristics. More specifically, ALD may be used to encapsulate pigment particles with controlled thicknesses of a thermal protective layer, such as VO2. ALD may allow films to be theoretically grown one atom at a time, providing angstrom-level thickness control.

Abstract: A granular fluidized bed reactor (FBR) for production of high purity silicon is described. The FBR uses a draft tube to promote internal circulation while minimizing voids in the fluidized bed, one significant cause of dust formation. The FBR design has geometries to minimize reactive gas concentration within the draft tube and imposes a desirable circulation pattern in operation. A portion of the FBR wall above a reactive zone provides heat input to maximize deposition on silicon beads while minimizing wall deposition. The FBR is made of carbon composite, ceramic, and graphite materials in a design to minimize contamination and enable silicon deposits to be melted out.

Abstract: This disclosure provides systems, methods, and apparatus related to deposition techniques using laser ablation. In one aspect, an optical fiber and target of a material to be deposited on a first region of an interior surface of a hollow component are positioned in the hollow component. A first end of the optical fiber is coupled to a laser system. A second end of the optical fiber is proximate the target. The material is deposited on the first region of the interior surface of the hollow component by directing a first laser pulse from the laser system through the optical fiber to impinge on the target.

Abstract: The present invention relates to a product container for a fluidized bed installation (1) having a product container wall (12), a product container bottom (13), a product container opening (14) opposite the product container bottom (13), a distributor bottom (20) between the product container bottom (13) and the product container opening (14), and at least one volume-reducing element (40) which can be releasably attached to the distributor bottom (20), on that side (20-1) of the distributor bottom (20) oriented toward the product container opening (14), and by means of which the free volume of the product container (10) between the distributor bottom (20) and the product container opening (14) is reduced.

Abstract: Apparatus, systems, and methods that ultrasonically agitate a semisolid metal slurry to prevent dendrite formation that can lead to clogging of a nozzle during direct metal writing.

Abstract: Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

Abstract: A direct-deposition system capable of forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through an aperture pattern of a shadow mask to deposit on the substrate in the desired pattern. Prior to reaching the shadow mask, the vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. As a result, the vaporized atoms that pass through the shadow mask exhibit little or no lateral spread (i.e., feathering) after passing through its apertures and the material deposits on the substrate in a pattern that has very high fidelity with the aperture pattern of the shadow mask. The present invention, therefore, mitigates the need for relatively large space between regions of deposited material normally required in the prior art, thereby enabling high-resolution patterning.

Abstract: Apparatus and methods are provided whereby a component can be cleaned while the furnace is operational. Additionally, particulates that have accumulated on the component can be collected and retained. The apparatus may include a portable frame, a tubular lance supported by the frame and having a nozzle at a distal end thereof, and a suction generator operatively connected to a proximal end of the lance to generate a suction at the nozzle. Manipulation of the lance to move the nozzle across a component allows accumulated particulates to be removed therefrom through the lance.

Abstract: A method of and system for recirculating a fluid in a particle production system. A reactor produces a reactive particle-gas mixture. A quench chamber mixes a conditioning fluid with the reactive particle-gas mixture, producing a cooled particle-gas mixture that comprises a plurality of precursor material particles and an output fluid. A filter element filters the output fluid, producing a filtered output. A temperature control module controls the temperature of the filtered output, producing a temperature-controlled, filtered output. A content ratio control module modulates the content of the temperature-controlled, filtered output, thereby producing a content-controlled, temperature-controlled, filtered output. A channeling element supplies the content-controlled, temperature-controlled, filtered output to the quench chamber, wherein the content-controlled, filtered output is provided to the quench chamber as the conditioning fluid to be used in cooling the reactive particle-gas mixture.

Abstract: An apparatus and methods for cold spraying with a spraying unit, a particle supply, a gas supply, and at least one heating unit. The heating unit contains a graphite felt that can be heated with an electric heater current, through which a gas stream can flow, wherein the at least one heating unit is arranged separately and/or in a pressure tank through which the gas stream can flow.

Abstract: A device for vapor deposition of chemical species on support grains of spherical or similar shape disposed in a fluidized bed. The device includes a first chamber including a fluidized bed in which a funnel-shaped fluidizer element is housed to receive support grains of spherical or similar shape; a second chamber in fluid flow connection with the first chamber to deliver precursors in a vapor phase of chemical species to be deposited on the support grains and to convey a fluidizing gas towards the first chamber; and a flute at an inlet to the fluidizer element to control distribution of the vapor phase precursors and the fluidizing gas within the fluidizer element. The distributor flute includes one or more outer grooves, each groove including a first portion oriented along the longitudinal axis of the flute and a second portion winding helically around the axis to generate a fluidizing gas vortex within the first chamber.

Abstract: A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalising, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.

Abstract: A method includes receiving an atomic layer deposition (ALD) cartridge into a receiver of an ALD reactor by a quick coupling method. The ALD cartridge serves as an ALD reaction chamber, and the method includes processing surfaces of particulate material within the ALD cartridge by sequential self-saturating surface reactions.

Abstract: The invention relates to a device for creating and conveying a gas-powder mixture having a powder receiving space (3) that is connected to a vacuum creation device via a vacuum line (19) that discharges to the upper region of said powder receiving space. A reduced pressure in comparison to a mixing chamber (7) can be created within the powder receiving space (3), and thus a gas flow directed against the powder flow direction within a powder supply channel (6).

Abstract: Disclosed are a method and a device for plasma treating workpieces (5). Said workpiece is inserted into a chamber (7) of a treatment station (3), which can be at least partly evacuated, and is positioned within the treatment station by means of a holding element. In order to simultaneously supply at least two chambers with at least one operating means, a flow of the operating means is branched at least once so as to form at least two partial flows (55).

Abstract: A method and fluidized bed reactor for reducing or eliminating contamination of silicon-coated particles are disclosed. The metal surface of one or more fluidized bed reactor components is at least partially coated with a hard protective layer comprising a material having an ultimate tensile strength of at least 700 MPa at 650° C.

Abstract: Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon. Particulate may be provided to a heated tray or pan, which is oscillated or vibrated to provide a reaction surface. The particulate migrates downward in the tray or pan and the reactant product migrates upward in the tray or pan as the reactant product reaches a desired state. Exhausted gases may be recycled.

Abstract: The invention provides an apparatus for increasing the size of gas-entrained particles in order to render the gas-entrained particles detectable by a particle detector, the apparatus comprising an evaporation chamber (2) and a condenser (7); the apparatus is configured so that vapour-laden gas from the evaporation chamber can flow into the condenser and condensation of the vaporisable substance onto gas-entrained particles in the condenser takes place to increase the size of the particles so that they are capable of being detected by a particle detector.

Abstract: Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon. Particulate may be provided to a heated tray or pan, which is oscillated or vibrated to provide a reaction surface. The particulate migrates downward in the tray or pan and the reactant product migrates upward in the tray or pan as the reactant product reaches a desired state. Exhausted gases may be recycled.

Abstract: The present invention is related to a continuous method for the functionalization of a pulverulent product in a plasma reactor comprising the steps of:—generating a plasma in a vertical reactor;—bringing the pulverulent product in contact with said plasma by letting said particles fall by gravity from top to bottom trough said reactor. The present invention also discloses an instalation for performing the functionalization method.

Abstract: The invention provides a reactor for the manufacture of silicon by chemical vapour deposition (CVD), the reactor comprises a reactor body that can rotate around an axis with the help of a rotation device operatively arranged to the reactor, at least one sidewall that surrounds the reactor body, at least one inlet for reaction gas, at least one outlet for residual gas and at least one heat appliance operatively arranged to the reactor. The reactor is characterised in that during operation for the manufacture of silicon by CVD, the reactor comprises a layer of particles on the inside of at least, one sidewall.

Abstract: A composite particulate preparing apparatus is provided that includes a rotating body receiving particulates to which an adhering material is allowed to adhere and having a bottom surface, a side wall and a flange part; a centrifugal machine rotating the rotating machine to apply centrifugal force to the particulates in the rotating body; an inclination varying device shifting the rotating body at an arbitrary inclination angle so that the bottom surface of the rotating body forms a vertical plane parallel to a gravitational direction from a horizontal plane perpendicular to the gravitational direction; and a stirring device disposed closer to a horizontal line perpendicular to a vertical line drawn from a rotational center of the rotating body in a gravitational direction on a rotational side where the particulates drop from an uppermost point, than to the vertical line.

Abstract: A disclosed film deposition apparatus has a separation gas supplying nozzle between reaction gas nozzles arranged away from each other in a rotation direction of a turntable on which a substrate is placed, and a ceiling member providing a lower ceiling surface on both sides of the separation gas supplying nozzle. In this film deposition apparatus, the separation gas supplying nozzle and the reaction gas nozzles are removably arranged along a circumferential direction of a chamber, and the ceiling member is removably attached on a ceiling plate of the chamber.

Abstract: A gas injection unit allows uniform cooling thereof via smooth flow of coolant and can be easily manufactured. The gas injection unit for a chemical vapor deposition apparatus includes, inter alia: a gas distribution housing; a cooling housing positioned between the gas distribution housing and a processing chamber where a deposition process is performed, and formed with a coolant inlet through which coolant is introduced, and a coolant outlet through which the coolant is discharged; a processing gas pipe of which one end is opened to the gas distribution housing and the other end is opened to the processing chamber, the processing gas pipe penetrating the cooling housing; and a first wall part positioned inside the cooling housing such that an inside of the cooling housing is partitioned into a central path and a peripheral path, and formed with a penetration hole such that the central path communicates with the peripheral path.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming particles of cathode active materials with a thin protective coating layer. The thin protective coating layer improves cycle and safety performance of the cathode active material. A coating precursor may be added at various stages during formation of the particles of cathode active materials. The thin layer of chemical may be a complete coating or a partial coating. The coating may include a thin layer of chemicals, such as an oxide, to improve cycle performance and safety performance of the cathode active material.

Abstract: The present invention relates to a novel process for the remote plasma surface treatment of substrate particles at atmospheric pressure. The invention is motivated by the urge to overcome major drawbacks of particle treatment in low pressure plasmas and in-situ particle treatment at atmospheric pressure. The former requires complex and mostly expensive vacuum installations and vacuum locks usually prohibiting continuous processing. Independent of the system pressure, in-situ plasma treatment causes particle charging and therefore undesirable interaction with the electric field of the discharge, which is seen to contribute to the process of reactor clogging. Additionally, the filamentary discharges modes of atmospheric pressure plasmas are inflicted with inhomogeneous surface treatment. Furthermore, short radical lifetimes at elevated pressures complicate a remote plasma treatment approach as widely used in low pressure applications.

Abstract: The invention relates to a jet spouted bed reactor, comprising a cylindrical area, a gas injection pipe at the base of the cylindrical area, and a transition area, connecting the upper end of the pipe to the base of the cylindrical area, this transition area having a convex profile in a plane extending through the axis (YY?) of flow of a fluid in the pipe.

Abstract: Embodiments of a reaction chamber liner for use in a heated silicon deposition reactor are disclosed. The liner has an upper portion, a mid portion comprising a material other than a stainless steel alloy, and a lower portion comprising a martensitic stainless steel alloy. The liner's upper portion may have a composition substantially similar to the lower portion.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: An apparatus and method sinters or partially sinters green pellets in a selected temperature range to make proppant particles as the green pellets pass through a first central portion of the first vortex gas flow and exit the second end of the first cylindrical vessel and/or pass through a second central portion of the second vortex flow and exit the fourth end of the second cylindrical vessel.

Abstract: The present disclosure describes a method and apparatus for detecting particles in a gas by saturating the gas with vapor and causing the gas to flow through a chamber with walls that are at a temperature different than the temperature of the entering gas creating a gas turbulence within the chamber resulting in the gas becoming super-saturated with vapor and causing said super-saturated vapor to condense on said particles and form droplets, which are then detected and counted by an optical light-scattering detector.

Abstract: Vapor deposition particles (91) discharged from at least one vapor deposition source opening (61) pass through a plurality of limiting openings (82) of a limiting unit (80) and a plurality of mask openings (71) of a vapor deposition mask (70), and adhere to a substrate (10) that relatively moves along a second direction (10a) so as to form a coating film. The limiting unit includes a plurality of plate members stacked on one another. Accordingly, it is possible to efficiently form a vapor deposition coating film in which edge blurring is suppressed on a large-sized substrate at a low cost.

Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Abstract: Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon. Particulate may be provided to a heated tray or pan, which is oscillated or vibrated to provide a reaction surface. The particulate migrates downward in the tray or pan and the reactant product migrates upward in the tray or pan as the reactant product reaches a desired state. Exhausted gases may be recycled.

Abstract: The invention relates to the deposition of nanoparticles from the gas phase of the a thermal plasma of a gas discharge and the subsequent attachment of said nanoparticles to the substrate particles. The invention can be used for increasing the flowability of solid bulk material. Particularly the pharmaceutical industry utilizes numerous intermediate and final products in the form of powders which cause processing problems because of the poor flowability thereof. With fine-grained materials, undesired adhesive effects occur foremost because of Van der Waals' forces. Said effects can be reduced by applying nanoparticles to the surface of the material that is to be treated. The invention is characterized by a combined process in which the nanoparticles are produced and are attached to the substrate surface. Using a non-thermal plasma additionally makes it possible to treat temperature-sensitive materials that are often used in the pharmaceutical industry.

Abstract: Method and equipment to produce nanopowders of materials based on pure metals, their alloys and chemical compounds of these metals with elements taken from the row of B, C, O and Si, encapsulated into a salt shell selected from the group of NaCl, NaF, LiCl, and LiF or their mixtures, includes independent evaporation by means of electron beam and/or laser radiation sources of the material and alkali metal(s) halogenide and simultaneous deposition of a mixture of their vapor phases on a substrate in a closed pumped-down volume. To achieve the required ratio of vapor flows, a screen with variable cross-section diaphragms is placed between the substrate movable in parallel to the evaporators, and the evaporators, thus allowing an independent regulation of the intensity of the vapor flow coming to the substrate from each of the evaporators.

Abstract: Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the substrate by altering spatial positioning of the substrate with respect to a plurality of gas columns. For example, the substrate may be moved relative to a plurality of substantially aligned gas columns, each disposing a different precursor. Thermalizing gas injectors for generating the precursors may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. Deposition systems for forming one or more III-V semiconductor materials on a surface of the substrate may include one or more such thermalizing gas injectors configured to direct the precursor to the substrate via the plurality of gas columns.

Abstract: Hydride vapor-phase deposition (HVPE) systems are disclosed. An HVPE hydride vapor-phase deposition system may include a reactant source chamber and a growth chamber containing a susceptor coupled to the reactant source chamber. The reactant source chamber may be configured to create a reactant gas through a chemical reaction between a solid or liquid precursor and a different precursor gas. The reactant source chamber can be configured to operate at a temperature T(M) significantly above room temperature. The reactant gas can be chemically unstable at or near room temperature. The susceptor is configured to receive a substrate and maintain the substrate at a substrate temperature T(S). The growth chamber includes walls can be configured to operate at a temperature T(C) such that T(M), T(S) are greater than T(C).

Abstract: The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.

Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

Abstract: A system and method for controlling deposition of thin films on substrates. One embodiment includes a vacuum chamber; a plurality of sources located inside the vacuum chamber; and a plurality of gas tubes, each of the plurality of gas tubes comprising a first volume for delivering precursor gas and a second volume for providing pumping.