Abstract: A system and method for controlling deposition of thin films on substrates. One embodiment includes a vacuum chamber; a plurality of sources located inside the vacuum chamber; and a plurality of gas tubes, each of the plurality of gas tubes comprising a first volume for delivering precursor gas and a second volume for providing pumping.

Abstract: A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor configured to measure a pressure of a first area in the reaction pipe; a second pressure sensor configured to measure a pressure of a second area in the reaction pipe; and a particle outlet configured to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more.

Abstract: The present disclosure describes a method and apparatus for detecting particles in a gas by saturating the gas with vapor and causing the gas to flow through a chamber with walls that are at a temperature different than the temperature of the entering gas creating a gas turbulence within the chamber resulting in the gas becoming super-saturated with vapor and causing said super-saturated vapor to condense on said particles and form droplets, which are then detected and counted by an optical light-scattering detector.

Abstract: The specification discloses a method and apparatus enabling the formation of a diffusion surface layer on a surface of a metal substrate, typically a ferrous based metal substrate, wherein in a first stage in a first fluidized bed furnace, a diffusion zone is formed extending inwardly from the surface of the metal substrate in which nitrogen has been diffused to form a nitride or carbo nitride inner zone and an outer white layer that is substantially free of porosity, treating the substrate formed in the first stage to prevent formation of or remove any surface oxide on the surface of the substrate, and in a second stage separate from the first stage, holding the thus treated substrate in a fluidized bed furnace operated under an inert atmosphere and fluidized by a flow of inert gas or gases, the substrate in the fluidized bed furnace being treated in the presence of a halide gas and a particulate metal or metal alloy.

Abstract: The present invention is directed to an apparatus and method for rapid cooling of a large substrate in a vacuum environment. A first cooled plate is brought into close proximity with one surface of a flat substrate. The spatial volume between the first cooling plate and the substrate is sealed and brought to a higher pressure than the surrounding vacuum level to increase the cooling efficiency. A second cooled plate is brought into close proximity with the opposite surface of the flat substrate. A second spatial volume between the second cooling plate and the substrate is sealed and the gas pressure is equalized to the gas pressure in the first spatial volume. The equalization of the gas pressure on both sides of the flat substrate eliminates deflection of the substrate and bending stress in the substrate.

Abstract: A polycrystal silicon manufacturing apparatus is disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a heater configured to supply heat to an internal space of the reaction pipe to generate silicon deposition reaction of the silicon particles; a temperature measurement unit configured to measure a temperature inside the reaction pipe; and a power supply unit configured to increase the temperature inside the reaction pipe, when a temperature value measured by the temperature measurement unit is less than a reference temperature value.

Abstract: In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

Abstract: Disclosed herein is an apparatus for preparing composite particulates, including a rotary body having a bottom surface and a side wall and operative to contain particulates to which an adhering material is to be made to adhere; a centrifugal machine for rotating the rotary body so as to apply centrifugal forces to the particulates in the rotary body; and an inclination varying device operative to vary the inclination of the rotary body to an arbitrary inclination angle in the range from an angle at which the bottom surface of the rotary body forms a horizontal surface perpendicular to the direction of gravity to an angle at which the bottom surface forms a vertical surface parallel to the direction of gravity, and operative to support the rotary body at the arbitrary inclination angle.

Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

Abstract: Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon. Particulate may be provided to a heated tray or pan, which is oscillated or vibrated to provide a reaction surface. The particulate migrates downward in the tray or pan and the reactant product migrates upward in the tray or pan as the reactant product reaches a desired state. Exhausted gases may be recycled.

Abstract: An evaporation apparatus is capable of preventing a sag phenomenon in a substrate. The evaporation apparatus includes a substrate supporting unit. The substrate supporting unit includes a substrate supporter for supporting side walls of a substrate in a chamber toward the same direction as an intake direction of the substrate entering the chamber; and a substrate-aiding supporter for supporting other side walls of the substrate that are not supported by the substrate supporter.

Abstract: A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films.

Abstract: The invention provides a process for depositing a coating onto particles being pneumatically transported in a tube. The process comprising the steps of providing a tube having an inlet opening and an outlet opening; feeding a carrier gas entraining particles into the tube at or near the inlet opening of the tube to create a particle flow through the tube; and injecting a first self-terminating reactant into the tube via at least one injection point downstream from the inlet opening of the tube for reaction with the particles in the particle flow. The process is suitable for atomic layer deposition and molecular layer deposition. An apparatus for carrying out the process is also disclosed.

Abstract: The subject of the invention is a process device for coating particles that falls within the field of chemical and pharmaceutical technology. It represents an improvement on the process equipment for coating particles by spraying from the bottom and works on the principle of fluidization technology. The process device for coating particles, according to the invention which has within the wall (1), one or more units placed, for which each unit consists of a swirl flow generator (4) with a perforated plate (3) and a draft tube (5) where centrally through the swirl flow generator (4) a single or multi-phase spraying nozzle (6) with a coating dispersion inflow (7) and inflow (8) of compressed air is installed, in which the swirl flow generator (4) has outward open and at an angle with regard to the vertical installed grooves (18).

Abstract: An inner electrode for barrier film formation is an inner electrode for barrier film formation that is inserted inside a plastic container having an opening, supplies a medium gas to the inside of the plastic container, and supplies high frequency power to an outer electrode arranged outside the plastic container, thereby generating discharge plasma on the inner surface of the plastic container to form a barrier film on the inner surface of the plastic container, and that is provided with a gas supply pipe (101) having a gas flow path (101a) to supply a medium gas (G) and an insulating member (103) screwed into an end portion of the gas supply pipe (101) to be flush therewith and having a gas outlet (102) communicated with the gas flow path (101a).

Abstract: A reactor for conducting vapor phase deposition process is disclosed. The reactor includes a reactive precursor reservoir beneath a powder reservoir and separated from it by valve means. A reactive precursor is charged into the reactive precursor reservoir and a powder is charged into the powder reservoir. The pressures are adjusted so that the pressure in the reactive precursor reservoir is higher than that of the powder reservoir. The valve means is opened, and the vapor phase reactant fluidized the powder and coats its surface. The powder falls into the reactive precursor reservoir. The apparatus permits vapor phase deposition processes to be performed semi-continuously.

Abstract: A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

Abstract: A device for vapor deposition of chemical species on support grains of spherical or similar shape disposed in a fluidized bed. The device includes a first chamber including a fluidized bed in which a funnel-shaped fluidizer element is housed to receive support grains of spherical or similar shape; a second chamber in fluid flow connection with the first chamber to deliver precursors in a vapor phase of chemical species to be deposited on the support grains and to convey a fluidizing gas towards the first chamber; and a flute at an inlet to the fluidizer element to control distribution of the vapor phase precursors and the fluidizing gas within the fluidizer element. The distributor flute includes one or more outer grooves, each groove including a first portion oriented along the longitudinal axis of the flute and a second portion winding helically around the axis to generate a fluidizing gas vortex within the first chamber.

Abstract: A system and method are described for providing simultaneously conformal coating of a plurality of three dimensional objects using atomic layer deposition. The system comprises a dielectric tube adapted for maintaining the plurality of objects under vacuum and at least one inlet for providing a gaseous material in the dielectric tube. The dielectric tube used for comprising the objects is mounted rotatable so as to be able to rotate the plurality of objects under vacuum during atomic layer deposition of a coating on the plurality of objects.

Abstract: A manufacturing apparatus for growing a SiC single crystal on a surface of a seed crystal that is made of a SiC single crystal substrate by supplying a source gas of SiC from a lower side of a vacuum chamber toward the seed crystal includes a pedestal, a rod member, and a cooling system. The pedestal is disposed in the vacuum chamber. The pedestal has a first surface on which the seed crystal is disposed and a second surface opposed to the first surface. The rod member holds the pedestal. The cooling system includes a temperature control pipe and a coolant temperature controller. The temperature control pipe is disposed on the second surface side of the pedestal. The coolant temperature controller controls a temperature of a coolant that flows to the temperature control pipe.

Abstract: A silicon carbide single crystal manufacturing apparatus includes a pedestal on which a seed crystal is disposed and a heating crucible disposed on an upstream side of a flow channel of source gas with respect to the pedestal. The heating crucible supplies the source gas to the seed crystal by introducing the source gas from an upstream end of a hollow cylindrical member and discharging the source gas from a downstream end of the hollow cylindrical member. A diameter narrowing part is disposed on the downstream end and has an opening portion that is smaller than an opening size of the hollow cylindrical member. The whole opening portion of the diameter narrowing part is included in a region that is defined by projecting an outer edge of the pedestal in a center axis direction of the heating crucible.

Abstract: Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner inwardly of the heater, a central inlet nozzle, a plurality of fluidization nozzles, at least one cooling gas nozzle, and at least one product outlet. The system may include a removable concentric sleeve inwardly of the liner. In particular systems the central inlet nozzle is configured to produce a primary gas vertical plume centrally in the reactor chamber to minimize silicon deposition on reactor surfaces.

Abstract: The present disclosure describes a method and apparatus for detecting particles in a gas by saturating the gas with vapor and causing the gas to flow through a chamber with walls that are at a temperature different than the temperature of the entering gas creating a gas turbulence within the chamber resulting in the gas becoming super-saturated with vapor and causing said super-saturated vapor to condense on said particles and form droplets, which are then detected and counted by an optical light-scattering detector.

Abstract: The present invention relates to a novel method for applying conductive structures on solar cells, a hot melt aerosol ink being atomised by means of an aerosol jet printing system and being discharged from the printing system in the direction of the solar cell, the printing system being heated at least partially in order to keep low the viscosity of the ink which is used. When impinging on the non-heated substrate (solar cell), the ink solidifies.

Abstract: The invention provides an apparatus for increasing the size of gas-entrained particles in order to render the gas-entrained particles detectable by a particle detector, the apparatus comprising an evaporation chamber (2) and a condenser (7); the apparatus is configured so that vapour-laden gas from the evaporation chamber can flow into the condenser and condensation of the vaporisable substance onto gas-entrained particles in the condenser takes place to increase the size of the particles so that they are capable of being detected by a particle detector.

Abstract: To prevent occurrence of arcing caused by difference of thermal expansion between the electrode and the solid dielectric in a plasma processing apparatus. The bottom part of a casing 20 of processing units 10L, 10R is open, this opening part is closed with a solid dielectric plate 50, and an electrode 30 is received in the casing 20 such that the electrode 30 is free in the longitudinal direction. The solid dielectric plate 50 has such strength as capable of supporting the dead weight of the electrode 30 solely by itself. The electrode 30 is placed on the upper surface of the solid dielectric plate 50 is a non-fixed state such that the dead weight of the electrode 30 is almost totally applied to the solid dielectric plate 50.

Abstract: To provide a plasma processing apparatus capable of enhancing insulation between an electrode and a casing and adjusting the temperature of the electrode from outside. An electrode 30 is provided at its discharge space forming surface with a solid dielectric 50. The electrode 30 is received in a casing 20 such that the solid dielectric 50 on the discharge space forming surface is exposed. An in-casing space 29 between the casing 20 and the electrode 30 disposed in the casing 20 is filled with substantially pure nitrogen gas. This nitrogen gas pressure is more increased than the pressure in the discharge space. Preferably, nitrogen gas is allowed to flow.

Abstract: A method for preparing polycrystalline or single-crystal zinc oxide ZnO on a seed placed in an enclosure under a controlled atmosphere, by sublimation of a zinc oxide source placed in a crucible inside the enclosure and distant from the seed, by formation of gas species, transport of gas species, condensation of gas species on the seed, recombination of the ZnO at the surface of the seed, growth of polycrystalline or single-crystal ZnO on the seed, and cooling of the polycrystalline or single-crystal ZnO, wherein: the zinc oxide source is heated by induction at a temperature, a so-called sublimation temperature, from 900 to 1,400° C. under a pressure from 2.10?3 atmospheres to 0.

Abstract: The present invention relates to a process for producing coated nanoparticles comprising a core comprising at least one first substance and at least one envelope at least partly surrounding the core and composed of at least one further substance, in a streaming system, to nanoparticles which can be produced according to this process, to nanoparticles comprising a nonporous core comprising at least one first substance and at least one porous envelope at least partly surrounding the core and composed of at least one further substance, the nanoparticles having a narrow particle size distribution, to the use of such nanoparticles in photocatalysis and to apparatus for carrying out the process.

Abstract: An epitaxial apparatus, including a supporting member to support a substrate; an external wall provided to surround the supporting member from the sides; an inner lid member provided in a removable manner on the external wall and covering at least a part of a gap between the supporting member and the external wall; an upper lid member that covers the substrate in a region surrounded by the external wall; a holding member that is held by the external wall, holds the upper lid member so that the upper lid member is sandwiched between the holding member and the external wall, and has a cooling unit to cool down a portion that holds the upper lid member; a heating unit; and a covering member provided so as to cover the surface of at least one of the upper lid member and the holding member.

Abstract: A substrate holding apparatus for use in ion implanters includes two or more substrate holders that can adopt interchangeable positions, thereby allowing one substrate holder to scan a substrate through an ion beam while substrates can be swapped on the other substrate holder. The substrate holder assembly includes a base rotatable about a first axis and at least two support arms extending from the base to ends provided with substrate holders. Rotating the base allows the substrate holders to move between designated positions. One designated position may correspond to a position for implanting a substrate and another designated position may correspond to a loading/unloading station.

Abstract: A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

Abstract: A fluid bed apparatus module (1) comprises an outer wall enclosing a processing chamber (9) and has a lower flange connection (4) and an upper flange connection (5), the lower flange connection being adapted to connection with a flange connection (14) of a supply of fluidising gas, and the upper flange connection being adapted to connection with a flange connection (17) of a filter chamber (18) for gas discharge. At least one partition element (6) is arranged in the processing chamber, so that at least one elongated channel is formed in the processing chamber, thereby defining a plug-flow area, and at least one substantially continuous product inlet (10) and at least one substantially continuous product outlet (11) are arranged in the module. Furthermore, a method comprises changing a first module for a second module in a fluid bed apparatus.

Abstract: The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

Abstract: The present invention relates to an apparatus and method for economic treatment of Geldhart class C or larger substrate powders of single or plural metal, ceramic, or polymeric materials. In particular, the present invention is directed to coating such powder via a fluidized CVD or PVD, electroless, electrochemical, or solution chemistry plating process, and provides processes and apparatus for accomplishing same. It is particularly suited to coating with single or plural layers of metal, ceramic, binder, sintering aid, or polymer onto such materials without agglomeration. The coated particles and products made therefrom exhibit novel physical properties that are not limited by classical chemical and thermodynamic constraints.

Abstract: Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.

Abstract: A method is for causing, within a decompression device, a particulate base material to carry an alloy particle having a particle size smaller than that of the particulate base material, the alloy particle containing at least two elements, the method including: forming the particulate base material by a chemical deposition; causing, in the decompression device, the particulate base material to carry a microparticle element; and forming the alloy particle by alloying the particulate base material and the microparticle element.

Abstract: An apparatus for making a set of Group IV nanoparticles is disclosed. The apparatus includes a top plate, the top plate further including an outlet port; a bottom plate; and a casing extending between the top plate and the bottom plate. The apparatus also includes a particle collector assembly configured to be in fluid communication with the outlet port; and a primary precursor tubing assembly passing through the bottom plate into the casing, the primary precursor tubing assembly including a primary precursor tubing assembly nozzle.

Abstract: The invention relates to the deposition of nanoparticles from the gas phase of the a thermal plasma of a gas discharge and the subsequent attachment of said nanoparticles to the substrate particles. The invention can be used for increasing the flowability of solid bulk material. Particularly the pharmaceutical industry utilizes numerous intermediate and final products in the form of powders which cause processing problems because of the poor flowability thereof. With fine-grained materials, undesired adhesive effects occur foremost because of Van der Waals'forces. Said effects can be reduced by applying nanoparticles to the surface of the material that is to be treated. The invention is characterized by a combined process in which the nanoparticles are produced and are attached to the substrate surface. Using a non-thermal plasma additionally makes it possible to treat temperature-sensitive materials that are often used in the pharmaceutical industry.

Abstract: One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

Abstract: A fine spherical particle formed of diamond as a core and having carbon nano-materials radially grown therefrom is disclosed, which exhibits the appearance of a Marimo (Cladophora sauteri) particle. Fine diamond catalytic particles 2 whose surfaces are oxidized and treated to carry a transition metal catalyst are floated and stirred in a gas phase of hydrocarbon while being heated at a selected temperature to bring about a catalytic reaction which synthesizes carbon nano-materials and to grow them on the surface of said oxidized fine diamond particle. Nano fibers or filaments 32 of a nano size are grown from the fine diamond catalytic particle 31 as a core to form cladophora-form carbon. The carbon nano-materials if the supported transition metal is Ni or Co become carbon nano-tubes and if it is Pd become coin stacked carbon nano-graphite.

Abstract: This invention releases the preparation method and equipment of graphite and catalyst composite for a kind of synthetic diamond. Firstly the clean graphite particle shall be placed into the heating chamber for pre-heating, the lower limit of the heating temperature shall be higher than the boiling point of the coated carbonyl metal complex and the upper limit of the heating temperature shall be set according to the thickness of the coating needed; secondly, the heated graphite particle will be fed into the coating room with vibrator or agitator and the steam of carbonyl metal complex shall be input for coating; finally the coated graphite particle shall be fed into the cooling and passivation room for cooling and passivation of the discharging materials or enter the next round circle of heating and coating.

Abstract: A PVD layer system for the coating of workpieces encompasses at least one mixed-crystal layer of a multi-oxide having the following composition: (Me11-xMe2x)2O3, where Me1 and Me2 each represent at least one of the elements Al, Cr, Fe, Li, Mg, Mn, Nb, Ti, Sb or V. The elements of Me1 and Me2 differ from one another. The crystal lattice of the mixed-crystal layer in the PVD layer system has a corundum structure which in an x-ray diffractometrically analyzed spectrum of the mixed-crystal layer is characterized by at least three of the lines associated with the corundum structure. Also disclosed is a vacuum coating method for producing a mixed-crystal layer of a multi-oxide, as well as correspondingly coated tools and components.

Abstract: Methods of forming a layer on a substrate using complexes of Formula I. The complexes and methods are particularly suitable for the preparation of semiconductor structures. The complexes are of the formula LyMYz (Formula I) wherein: M is a metal; each L group is independently a neutral ligand containing one or more Lewis-base donor atoms; each Y group is independently an anionic ligand; y=a nonzero integer; and z=a nonzero integer corresponding to the valence state of the metal.

Abstract: An apparatus and method for growing bulk single crystals of silicon carbide is provided. The apparatus includes a sublimation chamber with a silicon vapor species phase outlet that allows the selective passage of atomic silicon vapor species while minimizing the concurrent passage of other vapor phase species. The apparatus can provide control of vapor phase stoichiometry within the sublimation chamber, which in turn can allow the production of bulk silicon carbide single crystals with reduced intrinsic point defects concentration.

Abstract: An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effective to form a respective monolayer onto said individual wafers received within the chamber. After forming the monolayer, purge gas is emitted from individual gas inlets associated with individual of the wafers received within the chamber. An atomic layer deposition tool includes a subatmospheric load chamber, a subatmospheric transfer chamber and a plurality of atomic layer deposition chambers. Other aspects and implementations are disclosed.

Abstract: The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor system is measured to obtain the etching speed. In consideration of the errors of the resistors, the invention also provides a structure that utilizes an IC layout technique to put an interdigitized dummy resistor beside the sensing resistors. By taking the ratio of the equivalent resistance of the sensing resistors and the dummy resistor, the invention can compute to obtain the etching speed.

Abstract: Apparatus for vaporization of powdered material, includes one or more containers each containing possibly distinct powdered materials each having at least one component; a structure for fluidizing the powdered material in each container; a vaporization zone that is thermally isolated from at least one of the containers; a transporting structure for receiving fluidized powdered material from each container and delivering such fluidized powdered materials to the vaporization zone; and vaporizing the delivered powdered materials at the vaporization zone by applying heat.

Abstract: In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.

Abstract: A method and system for utilizing a gas injection plate comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.