Abstract: Methods of coating core materials by providing target materials and core materials; ablating the target materials to form ablated particulate target materials; and coating the core materials with said ablated particulate target materials; wherein the method is performed at a pressure of about 10 Torr or higher. Methods of coating particles with nanometer to multiple nanometer thick coatings in atmospheric pressure, and using pneumatic fluidization, are also provided.

Abstract: The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the process chamber, by means of separate delivery lines. The gas outlet areas lie one above the other between the floor of the process chamber and the cover of the process chamber and have different heights. The first reaction gas flows out of the gas outlet area that is situated next to the process chamber floor, optionally together with a carrier gas. A carrier gas is added at least to the second reaction gas, which flows out of the gas outlet area lying further away from the process chamber floor.

Abstract: A method and apparatus for annealing an integrated ferroelectric device (10) is disclosed in which the device (10) comprises a first layer of material capable of existing in a ferroelectric state and a second layer of material defining an integrated circuit below the first layer such as a microbridge thermal detector. The method comprises producing a pulse of energy, extending the pulse temporally using a pulse extender (200) and illuminating the first layer with the extended pulse. The duration and wavelength and fluence of the extended pulse are selected so that the material of the first layer is annealed into a ferroelectric state without exceeding the temperature budget of the integrated circuit. Application of the method in heating other articles which comprise a layer to be heated and a temperature sensitive layer is also disclosed.

Abstract: The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber of a reactor housing having a water-cooled wall. The floor of said process chamber is heated. At least one reaction gas as a process gas, and hydrogen as a carrier gas, are centrally introduced into the process chamber, and are extracted by a gas evacuation ring surrounding the process chamber. A flush gas flows between the cover of the reactor and the cover of the process chamber. Said flush gas and the flush gas which flushes the area between the reactor wall and the gas evacuation ring are introduced into the outer region of the process chamber, via a gap between the cover of the reactor and the gas evacuation ring which can be lowered for loading the process chamber, in order to be sucked through the openings in the gas evacuation ring with the process gas.

Abstract: A process for preparing particles of zinc sulfide-based electroluminescent phosphor having a moisture resistant coating thereon which comprises the steps of selecting a reaction vessel having a given height and a porous disc at the bottom thereof; charging the reaction vessel with phosphor particles and fluidizing the particles by introducing an inert gas into the vessel through the porous disc; heating the reaction vessel to a reaction temperature; introducing a coating precursor into the reaction vessel at a position adjacent the bottom of the vessel but above the disc; introducing a co-reactant into the reaction vessel at a position substantially mid-way of the given height; and maintaining the inert gas flow, the precursor flow and the co-reactant flow for a time sufficient for a reaction to occur and coat the phosphor with the moisture resistant coating. Apparatus for carrying out the process is also disclosed.

Abstract: An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effective to form a respective monolayer onto said individual wafers received within the chamber. After forming the monolayer, purge gas is emitted from individual gas inlets associated with individual of the wafers received within the chamber. An atomic layer deposition tool includes a subatmospheric load chamber, a subatmospheric transfer chamber and a plurality of atomic layer deposition chambers. Other aspects and implementations are disclosed.

Abstract: With the deposited-film forming apparatus according to the first embodiment of the present invention, the distance between the tubular barrel and the evaporating section can be varied, unlike the prior art deposited-film forming apparatus and hence, the efficient formation of the deposited film on the surface of each of the work pieces accommodated in the tubular barrel and the inhibition of the softening of the formed film can be achieved simultaneously. Therefore, it is possible to inhibit the damaging of the deposited film formed on the surface of each of the work pieces and the production of projections on the deposited film, and to form a deposited film at a high quality in respect of a corrosion resistance and the like and at low cost.

Abstract: A fluidized bed reactor with one or more stages each stage having a heating section located below a reacting section and a mechanism that pulses granules back and forth between the heating and reacting sections, separate injectors for silicon containing gases non silicon containing gases, heaters to heat the non silicon containing gases above the reaction temperature and the silicon containing gases to a temperature just below their decomposition temperature. The heater for the silicon containing gases controls the condensing vapor of a heat transfer fluid to a temperature below the decomposition temperature of the silicon containing gases. An enclosed noncontaminating sieving device selectively removes product and recycles undersize material. A weigh cell with frequency analysis capability provides information on the weight of the reactor and the force exerted by the pulsing action of the granules.

Abstract: A device and a method used when coating a wafer is described. The fluid coating is provided by an inside coating as well as an edge coating. The fluid chocolate in a container is stirred by displacing a vat up and down. During this displacement, the vat will be brought in contact with the wafer, so the chocolate substance, which is provided in there, provides an edge coating. Displacement of the first vat provides a repression of the chocolate substance, which through a nozzle is injected into the wafer in order to provide an inside coating. By repression, a pumping occurs, which is interrupted substantially simultaneously with the edge of the wafer getting in contact with the surface of the chocolate in vat, when it is elevated up towards the wafer, which is suspended in a commonly known apron conveyor (not shown).

Abstract: According to one aspect of the disclosure, the present invention provides methods and arrangements for controlling supply process gas to a process chamber for use in the manufacturing industry. Methods include controlling the operation of a valve coupled to the supply process gas line in a way such that pressure bursts in the process chamber due to the operation of the valve are reduced, or even eliminated.

Abstract: A submicron particle forming method includes feeding a first set of precursors to a first energy application zone. Energy is applied to the first set of precursors in the first energy application zone effective to react and form solid particles having maximum diameter of no greater than 100 nanometers from the first set of precursors. The application of any effective energy to the solid particles is ceased, and the solid particles and a second set of precursors are fed to a second energy application zone. Energy is applied to the second set of precursors in the second energy application zone effective to react and form solid material about the solid particles from the second set of precursors with the solid particles with solid material thereabout having maximum diameter of no greater than 100 nanometers. Other aspects are contemplated.

Abstract: A process for preparing particles of zinc sulfide-based electroluminescent phosphor having a moisture resistant coating thereon which comprises the steps of selecting a reaction vessel having a given height and a porous disc at the bottom thereof; charging the reaction vessel with phosphor particles and fluidizing the particles by introducing an inert gas into the vessel through the porous disc; heating the reaction vessel to a reaction temperature; introducing a coating precursor into the reaction vessel at a position adjacent the bottom of the vessel but above the disc; introducing a co-reactant into the reaction vessel at a position substantially mid-way of the given height; and maintaining the inert gas flow, the precursor flow and the co-reactant flow for a time sufficient for a reaction to occur and coat the phosphor with the moisture resistant coating. Apparatus for carrying out the process is also disclosed.

Abstract: A method and apparatus for coating a substrate (4) with a metal coating by vaporizing the metal in an enclosure (1) containing a selected gas and the substrate. The vaporized metal is deposited on the surface of the substrate either in a solid or molten form depending on the temperature of the substrate relative to the melting point of the metal being deposited. Alloying of the substrate and coating metal are possible with various postcoating heat treatments.

Abstract: The invention includes a method of forming a layer on a semiconductor substrate that is provided within a reaction chamber. The chamber has at least two inlet ports that terminate in openings. A first material is flowed into the reaction chamber through the opening of a first of the inlet ports. At least a portion of the first material is deposited onto the substrate. The reaction chamber is purged by flowing an inert material into the reaction chamber through the opening of a second of the inlet ports. The inert material passes from the opening and through a distribution head that is positioned within the reaction chamber between the first and second openings. A second material can then be flowed into the chamber through an opening in a third inlet port and deposited onto the substrate. The invention also includes a chemical vapor deposition apparatus.

Abstract: The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.

Abstract: A process for preparing particles of zinc sulfide-based electroluminescent phosphor having a moisture resistant coating thereon which comprises the steps of selecting a reaction vessel having a given height and a porous disc at the bottom thereof; charging the reaction vessel with phosphor particles and fluidizing the particles by introducing an inert gas into the vessel through the porous disc; heating the reaction vessel to a reaction temperature; introducing a coating precursor into the reaction vessel at a position adjacent the bottom of the vessel but above the disc; introducing a co-reactant into the reaction vessel at a position substantially mid-way of the given height; and maintaining the inert gas flow, the precursor flow and the co-reactant flow for a time sufficient for a reaction to occur and coat the phosphor with the moisture resistant coating. Apparatus for carrying out the process is also disclosed.

Abstract: Layer processing to grow a layer structure upon a substrate surface comprises supplying a vapor mixture stream to the substrate (28) to deposit constituents, monitoring growth with an ellipsometer (12) and using its output in real-time growth control of successive pseudo-layers. A Bayesian algorithm is used to predict a probability density function for pseudo-layer growth parameters from initial surface composition, growth conditions and associated growth probabilities therewith, the function comprising discrete samples. Weights are assigned to the samples representing occurrence likelihoods based on most recent sensor output. A subset of the samples is chosen with selection likelihood weighted in favor of samples with greater weights. The subset provides a subsequent predicted probability density function and associated pseudo-layer growth parameters for growth control, and becomes a predicted probability density function for a further iteration of pseudo-layer growth.

Abstract: A continuous process for gas phase coating of polymerization catalyst. The polymerization catalyst is introduced in a gas phase plug flow type reactor wherein it is submitted to polymerization conditions in the presence of at least one monomer such that at least 95% by weight of the produced coated catalysts have a coating yield comprised between 0.5 to 2 times the average coating yield.

Abstract: A fluidized bed pyrolytic carbon coating apparatus (1) is provided for coating substrate surfaces with pyrolytic carbon. The preferred coating apparatus (1) includes a fluidized bed reactor (10) having a reactor chamber (22), a gas feed inlet (24), an exhaust gas outlet (26), a source (12) of process feed gas and a gas line (14) through which the process feed gas can pass from the source (12) of process feed gas to the gas feed inlet (24) and into the reactor chamber (22). The gas line (14) includes an actuator (20) having a timing circuit (37) which acts to vary a rate of flow of process feed gas through the gas line (14) into the reactor chamber (22) such that the rate of flow into the reactor chamber (22), cycles regularly and consistently over a period of time so as to create a pulsating gas flow and a pulsation effect upon the fluidized bed within the reactor chamber (22).

Abstract: A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced.

Abstract: Methods and apparatus are provided for plasma doping and ion implantation in an integrated processing system. The apparatus includes a process chamber, a beamline ion implant module for generating an ion beam and directing the ion beam into the process chamber, a plasma doping module including a plasma doping chamber that is accessible from the process chamber, and a wafer positioner. The positioner positions a semiconductor wafer in the path of the ion beam in a beamline implant mode and positions the semiconductor wafer in the plasma doping chamber in a plasma doping mode.

Abstract: In a vacuum processing apparatus comprising a reactor and a vacuum pump connected to the reactor to draw up a gas held in the reactor, the vacuum pump comprising a diffusion pump and an auxiliary pump, the diffusion pump and the auxiliary pump are connected through an exhaust line and a cooling unit is provided in the exhaust line, whereby the gas is cooled by the cooling unit to liquefy or condense an oil smoke comprised of a diffusion pump oil contained in the gas, to cause the resultant oil to deposit in the exhaust the diffusion pump oil can be prevented from flowing into the auxiliary pump even when material gases fed in at a high rate are exhausted.

Abstract: A spherical shaped semiconductor integrated circuit (“ball”) and a system and method for manufacturing same. The ball replaces the function of the flat, conventional chip. The physical dimensions of the ball allow it to adapt to many different manufacturing processes which otherwise could not be used. Furthermore, the assembly and mounting of the ball may facilitates efficient use of the semiconductor as well as circuit board space.

Abstract: Particles are cooled at a particle introducing section by a cooling device. A vapor of modifying agent for modifying the particles is produced by heating the modifying agent in a vapor producing chamber by a heating device. Further, a supersaturated vapor of the modifying agent is produced around the particles by mixing the cooled particles with the vapor of the modifying agent. The modifying agent condenses on the surface of the particles by the production of the supersaturated vapor, and consequently, a film of the modifying agent is formed on the surface of the particles. A thick film of the modifying agent can be formed if this film forming step is carried out repetitively. Thus, modified particles having formed thereon a thick uniform film of the modifying agent can be produced by quite a simple manipulation in a very short time.

Abstract: This invention provides a firing jig for an electronic element comprising a spray coating layer made of a material less reactive to a material to be fired on a substrate made of a ceramic, wherein two or more spray coating layers are formed on the surface of the substrate, and at least a spray coating layer adjacent to the substrate and a spray coating layer adjacent to the material to be fired are made of different materials. When it is a firing jig for an electronic element comprising a ceramic substrate, a surface adjacent to the substrate is a spray coating layer and the surface of the spray coating layer is a flame coating layer. The firing jig for an electronic element has a longer life and can be produced with a lower cost.

Abstract: A method for improving the corrosion resistance of ceramic parts in a substrate processing chamber by implanting the parts with rare-earth ions. The implanted ceramic parts are highly resistant to corrosive environments that can be formed in semiconductor manufacturing equipment including those found in high temperature applications and high density plasma applications. In a preferred embodiment of the method of the present invention, the ceramic parts are implanted with rare-earth ions using an implantation technique based on a metal vapor vacuum arc (MEVVA™) ion source. The implanted ions are then reacted with fluorine radicals in a highly corrosive environment to form a layer of rare-earth fluoride material, RE:F3, at the surface of the ceramic component. The sublimation temperature of such a RE:F3 layer is much higher than that of layers such as AlF3 that are formed on standard ceramic chamber components in such environments (e.g., up to 1100° C. as compared to 600° C.).

Abstract: A hot wire chemical vapor deposition method and apparatus for fabricating high quality amorphous, micro-crystalline, and poly-crystalline thin film silicon, or related materials, devices and large area modules is described. A silane gas impinges upon a hot graphite rod assembly whereas the gas is broken up into its individual constituents, these constituents then depositing on an inert substrate member. The distance between the hot graphite rod assembly and the substrate member is adjustable. A shutter is provided to shield the substrate member as the hot graphite rod assembly is heating up. The hot graphite rod assembly contains a plurality of mutually parallel and coplanar rods that are parallel to the plane of the substrate member, and the hot graphite rod assembly and/or the substrate is oscillated in a direction generally normal to the direction in which the rods extend.

Abstract: A process for plasma treatment of particulate matter, and more particularly, an apparatus for plasma induced graft polymerization of particulate matter in a continuous or semi-continuous manner, and a process for plasma induced graft polymerization of particulate matter in a continuous or semi-continuous manner is provided.

Abstract: This invention relates to an improved apparatus for treating the surface of particles by plasma-activated gas species to modify the particle surfaces.

Abstract: A mobile cellular tumble coater and method is provided to coat articles with materials suitable for coating by vapor deposition under vacuum conditions. The mobile cellular tumble coater comprises multiple mobile part cells disposed on a hollow cylindrical chamber of an inner support base positioned within a coating chamber of a coating apparatus. Each mobile part cell comprises a hollow portion with an outer wall having multiple through holes large enough to permit vapors of coating material to flow into the mobile part cell and small enough to contain the articles therein. In an embodiment of invention, the mobile part cells are removably attached to the inner support base by rigid cables in such a manner that enables the mobile part cells to swing from the inner support base.

Abstract: A process for plasma treatment of particulate matter, and more particularly, an apparatus for plasma induced graft polymerization of particulate matter in a continuous or semi-continuous manner, and a process for plasma induced graft polymerization of particulate matter in a continuous or semi-continuous manner is provided.

Abstract: Particles are cooled at a particle introducing section by a cooling device. A vapor of modifying agent for modifying the particles is produced by heating the modifying agent in a vapor producing chamber by a heating device. Further, a supersaturated vapor of the modifying agent is produced around the particles by mixing the cooled particles with the vapor of the modifying agent. The modifying agent condenses on the surface of the particles by the production of the supersaturated vapor, and consequently, a film of the modifying agent is formed on the surface of the particles. A thick film of the modifying agent can be formed if this film forming step is carried out repetitively. Thus, modified particles having formed thereon a thick uniform film of the modifying agent can be produced by quite a simple manipulation in a very short time.

Abstract: A method and system for chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method performs chemical vapor deposition of a metal layer such as aluminum or copper upon the semiconductor spherical substrate by using a reactor made of a material such as quartz. The semiconductor spherical substrate moves and spins through the reactor where it is heated by a frequency heater such as an infrared heater. The heater utilizes infrared power source operating at a wavelength between 1 and 3 microns where the power is substantially absorbed by the semiconductor spherical substrate and is substantially transmitted by the quartz.

Abstract: An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a conductor coil. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure and is configured to be coaxial with the conductor coil. Devices move through the input conduit where they are preheated by a resistance-type furnace. The preheated devices then move into the chamber where chemical precursors are added and the devices are further heated to a predefined temperature associated with the chemical precursors by radio frequency energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

Abstract: An apparatus and method for performing material deposition on semiconductor devices. The apparatus provides an enclosure for defining a chamber. The chamber includes a metallic portion such as a conductor coil powered by a voltage generator. A gas, having a suspension of particles for treating the semiconductor devices, is introduced into the chamber and the powered conductor coil converts the gas to inductively coupled plasma and vaporizes the particles. The particles can then be deposited on the semiconductor devices.

Abstract: In a pigment depositing device for forming a recording layer of an optical recording medium, there is used an organic pigment of powder state, in which the diameter of each of particles of the organic pigment is uniform. In consequence, occurrence of splash is prevented when the organic pigment is heated by an electrical heater so that it is prevented that the particles of the organic pigment adhere to a substrate. Moreover, fluidity of the organic pigment in an organic pigment feeding device is raised so that the organic pigment is smoothly fed.

Abstract: A spherical object transport apparatus of the invention brings a spiral stream into contact with a first atmosphere containing a spherical object, selectively sucks the first atmosphere outward so as to engulf in the spiral stream for diffusing the first atmosphere outward, guides the spherical object so that the spherical object passes through the center of the transport apparatus, supplies a second atmosphere to the spherical object, and sends the spherical object together with the second atmosphere to the following step.

Abstract: Vapor coating apparatus comprising a chamber having a liquid inlet, atomization means, and chilled substrate support. Carrier gas and coating liquid (e.g. monomer or polymer) are contacted under conditions that vaporize the liquid. Nozzle near chamber inlet has liquid and carrier gas inlets, outlets, and passageways through which liquid and gas streams flow. The outlets and passageways are shaped so that the liquid and carrier gas streams collide outside the nozzle, and the liquid is atomized and then vaporized due to conditions within the chamber. The vapor flows to a substrate at the chamber outlet where it is condensed. The gas discharged from the nozzle is at high velocity and can be shaped as a cone surrounding the liquid discharged from the nozzle in the interior of the gas stream cone.

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition processes are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: A method for making particles coated with a diamond-like network, which can include additive components. The method comprises subjecting a multiplicity of particles to a carbon-based plasma in an evacuated radio frequency powered capacitively coupled reactor system in which ion sheaths are formed around the electrodes and wherein the particles are agitated in such a manner as to expose their surfaces to the reactive species in the plasma while keeping the particles substantially within an ion sheath.

Abstract: A system for depositing photo resist using chemical vapor deposition (“CVD”) onto a semiconductor substrate is disclosed. The system includes a processing chamber and a gas chamber. The gas chamber receives a monomer and supplies sufficient energy for polymerization of the monomer, thereby creating a polymer vapor. The processing chamber receives the semiconductor substrate and the polymer vapor. CVD occurs and the polymer vapor deposits a thin layer photo resist on the surface semiconductor substrate.

Abstract: A spherical object transport apparatus of the invention brings a spiral stream into contact with a first atmosphere containing a spherical object, selectively sucks the first atmosphere outward so as to engulf in the spiral stream for diffusing the first atmosphere outward, guides the spherical object so that the spherical object passes through the center of the transport apparatus, supplies a second atmosphere to the spherical object, and sends the spherical object together with the second atmosphere to the following step.

Abstract: A method and apparatus for metal-organics chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method includes pretreating the spherical substrate with a vapor of a first precursor in preparation for a deposition of a metal layer. The pretreated spherical substrate is then exposed to a thermally dissociated precursor of metal for depositing the metal layer onto the spherical substrate, wherein the exposure to the thermally dissociated precursor of metal provides a uniformly deposited metal layer coverage over the pretreated spherical substrate. The deposited metal layer is then annealed and cooled.

Abstract: A halogen fluoride such as ClF.sub.3 is introduced into the chamber of the doping system. During the doping process, boron adhering to the inner wall of the chamber is changed into gaseous boron fluoride (such as BF.sub.3) and driven off.

Abstract: An apparatus and method are described for stripping the photoresist from a wafer while in a substantially parallel manner, another wafer is being transferred between a load lock chamber and a transfer chamber, where the processing occurs. Further, a system is described whereby two load lock chambers are employed so that processing of wafers can continue uninterrupted by a delay caused by the need to open, empty, reload and re-equilibrate a single load lock chamber. Still further, a system is described for performing multi-step dry-stripping applications requiring different conditions for two or more of the steps wherein the steps may be performed simultaneously or sequentially. Finally, a system combining a dry-stripping module and a wet-cleaning module is described which combination system permits the continuous, fully-automated dry-stripping and wet-cleaning of wafers and, upon completion of the entire processing cycle, returning wafers to their original wafer cassettes.

Abstract: A spherical shaped semiconductor integrated circuit ("ball") and a system and method for manufacturing same. The ball replaces the function of the flat, conventional chip. The physical dimensions of the ball allow it to adapt to many different manufacturing processes which otherwise could not be used. Furthermore, the assembly and mounting of the ball may facilitate efficient use of the semiconductor as well as circuit board space.

Abstract: A deposition chamber for use in depositing vapors on substrates. The deposition chamber comprises a hollow outer containment vessel which defines a first longitudinal axis. Rotatably mounted within the containment vessel is a tumbler having first and second ends and an interior compartment for accommodating the substrates. The tumbler defines a second longitudinal axis which is angularly off-set relative to the first longitudinal axis. Disposed within the tumbler are vapor inlet and outlet ports, both of which communicate with the interior compartment. The rotation of the tumbler facilitates the reciprocal movement of substrates positioned within the interior compartment between the first and second ends of the tumbler.

Abstract: The process for producing coated particles of the present invention is applicable to a process of producing coated particles by charging powder of core particles into the coating space and permitting a coat forming substance generated via a vapor phase or being in a vapor-phase state to contact against particles of the powder, and the process is characterized by dispersing powder of core particles having an average particle diameter of not more than 10 .mu.m and a particle size distribution of ((D.sub.M /5, 5D.sub.M), .gtoreq.90%) to adjust a dispersity .beta. to at least 70%, and contacting the dispersed powder of the core particles with the coat forming substance.

Abstract: A method and apparatus for producing a pattern of nucleation sites is disclosed. The method enables the growth of single crystal layers of a desired orientation on a suitable amorphous and/or non-single crystal surface. The method can be used to produce single crystal Si layers of a desired orientation on an amorphous layer, e.g. of SiO.sub.2 or Si.sub.3 N.sub.4. The method can provide for growth of (100) crystal orientation on SiO.sub.2. Semiconductor films may be accordingly grown on amorphous glass substrates for producing solar cells of high efficiency. A pattern of nucleation sites is created in amorphous layers, e.g. SiO.sub.2 on an IC wafer, by high-dose implantation through a single crystal mask having appropriate channeling directions at the desired lattice constants. Such implantation may be performed in a conventional ion implanter. Subsequent to creation of spaced-apart nucleation sites, epitaxial Si may be grown on such an SiO.sub.2 surface by CVD of Si.

Abstract: Described is a method for depositing from the vapor phase a chemical species into the form of a thin solid film material which overlays a substrate material. The deposition process consists of three steps: (1) synthesis of depositing species, (2) transport of said species from site of synthesis to a prepared substrate material, and (3) condensation and subsequent film growth. The transport step is achieved by admixing small concentrations of the depositing species into the flow of a high speed jet of an inert carrier gas. This jet impinges on the substrate's surface and thereby convects the depositing species to this surface where condensation occurs. Since the gas mixture is at fairly high pressure, the deposition is achieved in a simple flow apparatus rather than in the high vacuum systems required of other methods. Also this transport technique allows the chemical and/or physical phenomena utilized in the depositing species synthesis step to be isolated from the actual condensation reaction.