Abstract: A method of cleaning a wafer after an etching process is provided. A substrate having an etching stop layer, a dielectric layer, a patterned metal hard mask sequentially formed thereon is provided. Using the patterned metal hard mask, an opening is defined in the dielectric layer. The opening exposes a portion of the etching stop layer. A dry etching process is performed in the environment of helium to remove the etching stop layer exposed by the opening. A dry cleaning process is performed on the wafer surface using a mixture of nitrogen and hydrogen as the reactive gases. A wet cleaning process is performed on the wafer surface using a cleaning solution containing a trace amount of hydrofluoric acid.

Abstract: A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

Abstract: A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle ? by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.

Abstract: The invention relates to methods and compositions for removing metal oxide soils from surfaces. The compositions include an anionic surfactant and a pH adjuster at an acidic pH. In one embodiment, the invention relates to a method of removing a metal oxide soil from a surface by (1) applying a use composition to the surface, the use composition having a pH adjuster in an amount sufficient to provide a use pH at or below 7, an anionic surfactant in an amount to remove a portion of the metal oxide soil, and a carrier, (2) removing the metal oxide soil from the surface with the use composition, and (3) rinsing the surface to remove the use composition and the metal oxide soil.

Abstract: A method for achieving high purity in a jig for semiconductor heat treatment includes subjecting a semiconductor heat treatment jig made of a substrate having a surface covered with a silicon carbide film grown by chemical vapor deposition or a semiconductor heat treatment jig made of a silicon carbide film grown by chemical vapor deposition to high-temperature oxidation heat treatment so as to form an oxide film on a surface of the silicon carbide film, and removing the oxide film.

Abstract: A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.

Abstract: A metal processing method includes etching to remove material from a thin metal part. A pattern of etch resistant material is used to prevent etching of the metal in desired locations. The etch resistant material is intentionally applied to unclean surfaces so that an adhesion between the etch resistant material and the metal will fail during the etching process. An edge is formed during etching at the boundaries of the pattern of the etch resistant material. These edges are rounded where the adhesion fails. A shaver foil is produced using the described metal processing method including a face side, a cutter side and a plurality of whisker holes. A face edge is formed where an etched profile of the whisker hole meets the face side and a cutter edge is formed where the etched profile of the whisker hole meets the cutter side. The face edge is rounded using the aforementioned process and the cutter edge is sharp using a conventional etch resistant material application method.

Abstract: The present invention is a chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride. The present invention is also a process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.

Abstract: A method for stripping paint hangers in a paint conveyor system. The system comprising a plurality of operation stages for operating on articles coupled to the paint hangers, and with the paint hangers supported from at least one conveyor line. The method comprising: Performing operations on articles at operation stages, while paint hangers are supported from the conveyor line, removing the articles from the paint hangers following completion of performing of operations on the articles, performing in-line stripping process on the hangers, and returning stripped paint hangers to an initial one of the operation stages following the stripping process.

Abstract: An easily handleable composition for metal surface treatment is provided which achieves foundation surface concealment, coating adhesion and corrosion resistance equal to or higher than those obtained by the conventional metal surface treatment compositions. This composition for metal surface treatment places no burden on the environment. A method for treating the surface of a metal material in which such a composition for metal surface treatment is used, and a metal material treated by such a metal surface treatment method, are also provided. Specifically disclosed is a metal surface treatment composition used for a treatment of a metal surface, which composition contains a zirconium compound and/or titanium compound substantially not containing fluorine, and an inorganic acid and/or a salt thereof. This metal surface treatment composition has a pH of not less than 1.5 but not more than 6.5.

Abstract: A method for the pre-treatment of titanium components for the subsequent coating thereof is provided. The method includes at least the following steps: a) etching of the component in an acidic solution containing fluoride and nitric acid (HNO3); b) activation pickling of the etched component in a solution containing at least sodium nitrate (NaNO3) and tetrafluoroboric acid (HBF4); and c) activation of the activation-pickled component in a bath containing acid or in an acidic bath containing nickel.

Abstract: A cleaning composition for cleaning particulate contamination from small dimensions on microelectronic device substrates. The cleaning composition contains dense CO2 (preferably supercritical CO2 (SCCO2)), alcohol, fluoride source, anionic surfactant source, non-ionic surfactant source, and optionally, hydroxyl additive. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: A process for chemically stripping a metallic coating on an external surface of a substrate without attacking an internal surface defined by an internal passage within the substrate. Processing steps include depositing within the internal passage a thermally-decomposable wax having a melting temperature above 75° C. so as to mask the internal surface of the substrate, and then treating the substrate with an aqueous solution containing an acid having the formula HxAF6 where A is silicon, germanium, titanium, zirconium, aluminum, or gallium, and x has a value of one to six. The aqueous solution is at a temperature below the melting temperature of the wax and substantially removes the metallic coating from the external surface of the substrate, while the wax is substantially unreactive with the aqueous solution and prevents the aqueous solution from contacting the internal surface of the substrate. Thereafter, the substrate is heated to thermally decompose the wax without producing hazardous byproducts.

Abstract: A substrate processing method includes a first step of forming a metal complex by allowing a processing gas containing an organic compound to be adsorbed by a metal layer formed on a target substrate while setting the target substrate to be kept at a first temperature, and a second step of sublimating the metal complex by heating the target substrate to maintain it at a second temperature higher than the first temperature.

Abstract: A system using electrochemically-activated water (ECAW) for manufacturing, processing, packaging, and dispensing beverages including: (a) using ECAW to neutralize incompatible residues when transitioning from the production of one beverage to another; (b) using ECAW to rehabilitate and disinfect granular activated charcoal beds used in the feed water purification system; (c) producing a carbonated ECAW product and using the carbonated ECAW for system cleaning or disinfecting; (d) using ECAW solutions in the beverage facility clean-in-place system to achieve improved microbial control while greatly reducing water usage and reducing or eliminating the use of chemical detergents and disinfectants; (e) further reducing biofilm growth in the processing system, and purifying ingredient water without the use of chlorine, by adding an ECAW anolyte to the water ingredient feed stream; and/or (f) washing the beverage product bottles or other packages with one or more ECAW solutions prior to packaging.

Abstract: A method is provided for cleaning crevices between a plurality of tubes and a plurality of tube support plates supporting the tubes in a steam generator. The steps include filling a secondary side of the steam generator with a solvent to a first level above a first tube support plate to be cleaned, draining the solvent to a second level lower than the first tube support plate, and refilling the secondary side of the steam generator with the solvent to a third level above the first tube support plate. A cleaning system is also provided.

Abstract: A method and composition and system which for the oxidation, clean up, removal and control of iron and iron deposits in water and the removal of iron deposits and bacterial bio-films from surfaces in water systems. The composition contains sodium chlorite, sodium hypochlorite and citric acid.

Abstract: A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

Abstract: A method and composition for removing silicon-containing particulate material, such as silicon nitrides and silicon oxides, from patterned Si/SiO2 semiconductor wafer surfaces is described. The composition includes a supercritical fluid (SCF), an etchant species, a co-solvent, a surface passivator, a binder, deionized water, and optionally a surfactant. The SCF-based compositions substantially remove the contaminating particulate material from the wafer surface prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the semiconductor device.

Abstract: An exemplary acid pickling solution for treating a surface of a magnesium alloy workpiece. The acid pickling solution consists of 5 g/l to 30 g/l of citric acid, 1.5 g/l to 6 g/l of surface active agent, wherein the surface active agent is a water-soluble and silicone free agent. A method for treating a surface of a magnesium alloy workpiece is also provided.

Abstract: A process for treating metal to remove oxidation or contaminants or prepare the metal for processing without unduly damaging the metal. A formulation of sulfuric acid, water, and either ammonia or a sulfate salt of ammonia (or both) is used to treat the metal. The sulfuric acid is effective in removing impurities and contaminants, while the ammonia or ammonia salt reduces the otherwise damaging effect sulfuric acid has on metal.

Abstract: By exposing a wet chemical cleaning solution, such as hydrofluoric acid, to a pressurized inert gas ambient prior to applying the solution to patterned dielectric materials of semiconductor devices, the incorporation of oxygen into the liquid during storage and application may be significantly reduced. For instance, by generating a substantially saturated state in the pressurized inert gas ambient, a substantially oversaturated state may be achieved during the application of the liquid in ambient air, thereby enhancing efficiency of the treatment, for instance, by reducing the amount of material removal of exposed copper surfaces after trench patterning, without requiring sophisticated modifications of process chambers.

Abstract: Described are methods and chemistries for preparing firepolished quartz parts for use in semiconductor processing. The quartz parts in need of preparation include newly manufactured parts as well as parts requiring refurbishment after previous use in semiconductor processing. The embodiments described avoid methods and chemistries that may damage the surfaces of the quartz parts and render the parts unfit for use in semiconductor processing. A method in accordance with one embodiment minimizes damage by limiting exposure of the quartz parts to hydrofluoric acid. A quartz part for use in semiconductor processing comprises a surface including a surface portion having a surface portion area to expose to a gas, wherein at least 95 percent of the surface portion area is free of defects and wherein the surface portion has less than E12 atoms per centimeter squared of aluminum.

Abstract: The invention relates to a method for the removal of residues and contaminants from metal or dielectric surfaces and to a method for chemical mechanical polishing of a copper or aluminum surface. The methods of the invention include using an aqueous amidoxime complex agent. Optionally, the pH of the solution can be adjusted with an acid or base. The method includes applying the above composition to the copper or aluminum surface and polishing the surface in the presence of the composition.

Abstract: A ceramic sprayed member-cleaning method which is capable of reliably suppressing desorption and attachment of water. The surface of a ceramic sprayed member and water are chemically bonded to each other, whereby the water is stabilized. Water physically adsorbed on the surface of the ceramic sprayed member is desorbed.

Abstract: The invention can provide a production method for a magnetic disk substrate capable of reducing the number of surface defects of a glass substrate. When a magnetic disk is produced by using the resulting magnetic disk substrate, the yield and, furthermore, the reliability can be improved. When a surface of a magnetic disk substrate is washed after it is polished, the glass substrate is dipped into a washing solution while the surface of the glass substrate polished is held under a wet condition. The wet condition of the surface of the glass substrate includes a condition in which the glass substrate is dipped into water that may contain a surfactant, and a condition in which a liquid film is formed substantially on the entire surface.

Abstract: A composition for the production of semiconductors, comprising H2SiF6 and/or HBF4 in a total amount of 10-500 mg/kg, 1-17 % by weight of H2S04, 1-15% by weight of H202, optionally in combination with additives, in aqueous solution and a process of removing residual polymers using the composition.

Abstract: The present disclosure provides a method of cleaning a semiconductor substrate after a DRIE etch process, wherein residue from the DRIE process is removed without damaging the substrate. The process may include contacting the micro-fluid ejection head with an aqueous solution of TMAH, stripping a photoresist etch mask from the micro-fluid ejection head, and dissolving a passivating coating from the substrate. Then the substrate may be contacted with an acidic solution. The method may further include rinsing and drying the substrate.

Abstract: The annular surface between the tubing and casing of an oil or gas well as well as flow conduits and vessels may be contacted with a foamed treatment composition containing a gas, a foaming agent and a treatment agent. The treatment agent may be an inhibitor or removal agent for scales, corrosion, salts, paraffins or asphaltenes. The foam, upon destabilization, renders a thin film of concentrated treatment agent on the external surfaces of the tubing, inside the casing and in the perforations of the oil or gas well or on the flow conduits or vessels.

Abstract: An inventive substrate treatment method is performed by a substrate treatment apparatus including a plate having an opposed surface to be kept in opposed spaced relation to one surface of a substrate for treating the substrate with a treatment liquid, and includes: a pre-supply liquid filling step of supplying a pre-supply liquid into a space defined between the one surface of the substrate and the plate through a spout which is provided in the opposed surface in opposed relation to the center of the substrate, and filling the space with the pre-supply liquid, the pre-supply liquid having a smaller contact angle with respect to the substrate and the plate than the treatment liquid; a treatment liquid replacing step of, after a liquid-filled state is established in the space filled with the pre-supply liquid, supplying the treatment liquid into the space to replace the pre-supply liquid present in the space with the treatment liquid while keeping the space in the liquid-filled state; and a treatment liquid con

Abstract: Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof or amine group containing acid.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: A method for cleaning a silicon wafer includes (S11) cleaning surfaces of a silicon wafer using an SC-1 cleaning solution according to standard clean 1; (S12) rinsing the surfaces of the silicon wafer, cleaned in the step S11, using deionized water; (S13) cleaning the surfaces of the silicon wafer, rinsed in the step S12, using a cleaning solution including hydrochloric acid, ozone water and deionized water; (S14) rinsing the surfaces of the silicon wafer, cleaned in the step S13, using deionized water; and (S15) drying the surfaces of the silicon wafer, rinsed in the step S14. A stable oxide film is formed on the surfaces of the silicon wafer using a material having a strong oxidizing ability while a cleaning process is performed. Therefore, a problem that as time passes, external impurities are attached to the surfaces of the silicon wafer can be solved by a simple and safe process.

Abstract: A method of cleaning a photoactive and/or hydrophilic surface includes contacting the surface with conditioned water and optionally a cleaning agent solution. A device for cleaning a photoactive and/or hydrophilic surface includes a housing having an inlet and an outlet, a first chamber and an optional second chamber located in the housing, a flow passage extending through the housing between the inlet and the outlet, and a selector valve configured to selectively place the flow passage in flow communication with the first chamber, the optional second chamber, neither chamber, or both chambers. In one embodiment, the first chamber includes an ion exchange bed and the second chamber includes at least one cleaning agent.

Abstract: A water treatment system includes a circulation pump and an electrolytic chamber in fluid communication with a main body of water. Electrolytic plates within the electrolytic chamber generate chlorine. When mineral deposits foul the electrolytic plates, water is isolated within the electrolytic chamber and a minimal amount of a pH-reducing agent is added to the electrolytic chamber to remove the mineral deposits. In a first embodiment, the pH-reducing agent is admitted on a periodic timed basis. In a second embodiment, the pH-reducing agent is added when the pH of the main body of water falls below a predetermined threshold. In both embodiments, cleaning is accomplished by adding the pH-reducing agent when the circulation pump is not operating so that the acid dwells within the electrolytic chamber for a sufficient amount of time. Activation of the circulation pump causes the pH-reducing agent to enter the main body of water.

Abstract: Semiconductor wafers are cleaned by forming a first liquid film on a surface of the semiconductor wafer to be cleaned, the first liquid film containing hydrogen fluoride and ozone; replacing the first liquid film with a second aqueous liquid film which contains hydrogen fluoride and ozone, the concentration of hydrogen fluoride in the second liquid film being lower than in the first liquid film; and removing the second liquid film.

Abstract: A method for cleaning a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees comprises contacting the semiconductor surface with a cleaning liquid composition including an aliphatic polycarboxylic acid, an organic solvent having a hydroxyl group and/or an ether group, an anionic surfactant and water.

Abstract: The invention relates to a method for cleaning an artillery gun barrel, which is cleaned of gun oil, greases, or combustion residues using a washing liquid and a brush element. The brush element is moved backwards and forwards in the barrel with the aid of the washing liquid. In addition, copper is cleaned out of the simultaneously in the same process. The invention also relates to a system for cleaning an artillery gun barrel.

Abstract: Some embodiments include methods of treating surfaces with aerosol particles. The aerosol particles may be formed as liquid particles, and then passed through a chamber under conditions which change the elasticity of the particles prior to impacting a surface with the particles. The change in elasticity may be an increase in the elasticity, or a decrease in the elasticity. The change in elasticity may be accomplished by causing a phase change of one or more components of the aerosol particles such as, for example, by at least partially freezing the aerosol particles, or by forming entrained bubbles within the aerosol particles. Some embodiments include apparatuses that may be utilized during treatment of surfaces with aerosol particles.

Abstract: A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water.

Abstract: Disclosed are a method and apparatus for etching disk-shaped members, especially a method and apparatus for etching semiconductor wafers. In a method wherein wafers (30) are rotated and etched in an etching chamber (12) which is filled with an etching solution, a non-rotating cell plate (26) is disposed between two rotating wafers (30). In an etching apparatus wherein multiple wafers (30) are supported and rotated by a rod (16), the cell plate (26) is disposed between each two wafers (30). The cell plate (26) has a surface area roughly equivalent to that of the wafer (30).

Abstract: An acid inhibitor concentrate is provided which contains water, at least one polyamino-aldehyde resin such as a quaternized polyethylenepolyamine-glyoxal resin, and at least one compound selected from the group consisting of acetylenic alcohols, ethoxylated fatty amines, ethoxylated fatty amine salts, and aldehyde-releasing compounds (such as hexamethylenetetramine). Such concentrates form useful metal cleaning and pickling solutions when combined with aqueous acid, wherein such solutions, when contacted with a metal surface, are effective in removing scale, smut and other deposits from the metal surface but exhibit a reduced tendency for the aqueous acid to attack or etch the metal itself.

Abstract: Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.

Abstract: A method for surface modification of a semiconductor layer and a method of manufacturing a semiconductor device are provided. The method for surface modification of the silicon layer includes following steps. First, a semiconductor layer having several particles on its surface is provided. Next, these particles are removed through a clean process. In the clean process, the semiconductor layer is exposed to an organic matter remover, a first peroxide mixture solution and a second peroxide mixture solution sequentially.

Abstract: In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided.

Abstract: A method of removing metal scale from surfaces that includes contacting the surfaces with a first aqueous solution of a chelating agent, allowing the chelating agent to dissolve the metal scale, acidifying the solution to form a precipitant of the chelating agent and a precipitant of the metal from the metal scale, isolating the precipitant of the chelating agent and the precipitant of the metal from the first solution, selectively dissolving the precipitated chelating agent in a second aqueous solution, and removing the precipitated metal from the second solution is disclosed.

Abstract: The present invention provides a method for removing niobium-rich second-phase-particle (SPP) deposits from zirconium-niobium alloy components. The method comprises washing a freshly pickled and rinsed zirconium-niobium alloy component with an acidified oxalic acid or ammonium oxalate washing solution. The method of the present invention results in a rapid, efficient and complete removal of surface SPP deposits from the zirconium-niobium alloy component without pitting, leaving behind a clean, shiny surface without the need to use water blasting or mechanical wiping operations.

Abstract: Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.

Abstract: A surface treatment process for a metal article includes the following steps. Firstly, a metal article, made of at least one of copper and an alloy thereof, is provided. Secondly, a surface of the metal article is degreased. Thirdly, the surface of the metal article is activated in an acid solution. Finally, the surface of the metal article is deactivated by submersion in an antioxidant agent.