Abstract: A process is provided for chemically decontaminating the surface of a metallic component. In a first treatment step, an oxide layer formed on the component by corrosion of the material of the component is detached from the surface of the component with a first aqueous treatment solution containing an organic decontamination acid. In a subsequent second treatment step, the surface which is at least partially freed of the oxide layer is treated with an aqueous solution containing an active component for removing particles which adhere to the surface. The active component is formed of at least one anionic surfactant from the group including sulphonic acids, phosphonic acids, carboxylic acids and salts of those acids.

Abstract: A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated.

Abstract: Filters used in the beverage industry fouled by polyphenol-protein complexes and carbohydrate polymers can be cleaned by treating the filters either with the following methods: Solubilization of at least part of the carbohydrate polymers followed by a treatment of the resulting polyphenol protein complex with an oxidative chemical. Treatment of the fouled filters through a back-wash method using an oxidative chemical. In both cases it is not necessary to rinse the membranes after cleaning with a reductive chemical.

Abstract: The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.

Abstract: The invention relates to an aqueous cleaning composition for wafers with copper wires that have been treated by chemical mechanical planarization in an integrated circuit processing, comprising 0.1 to 15 wt % of a nitrogen-containing heterocyclic organic base, 0.1 to 35 wt % of an alcohol amine and water. Upon contact with copper-containing semiconductor wafers that have been treated by chemical mechanical planarization for an effective period of time, the aqueous cleaning composition can effectively remove residual contaminants from the surfaces of the wafers, and simultaneously provide the copper-containing semiconductor wafers with a better surface roughness.

Abstract: A method for removing inorganic foreign matters from the surface of a substrate made of silicon or glass or the surface of an inorganic coating formed on the surface of the substrate, which includes applying a light beam in a wavelength range which makes the light absorption coefficient of at least one of a material of the substrate, a material of the inorganic coating and the inorganic foreign matters be at least 0.01/cm, to the surface of the substrate or to the surface of the inorganic coating in an application amount of at least 10 J/cm2 in an oxygen- or ozone-containing atmosphere, and exposing the surface of the substrate or the surface of the inorganic coating having a negative surface potential to an acidic solution having a pH ?6.

Abstract: A solution for removing an aluminum oxide film from an aluminum or aluminum alloy surface, which includes a salt or oxide of a metal capable of substituting aluminum, a solubilizing agent for ions of the metal, and an alkali, and which has a pH of 10 to 13.5. The removing solution makes it possible to form a film of the metal derived from the metal salt or oxide contained in the removing solution by dissolving away the oxide film from the aluminum or aluminum alloy surface at a low temperature and a high speed while restraining, as securely as possible, erosion of the aluminum or aluminum alloy surface. Besides, the removing solution ensures that even in the case where the thickness of the aluminum or aluminum alloy basis material is very small, the aluminum or aluminum alloy surface can be activated while assuredly leaving the aluminum or aluminum alloy basis material.

Abstract: The removal of a coating from components after they have been used is often achieved using various acid baths and salt melts. A coating removal process that includes only using hydrochloric acid is provided. The duration of the process in which the coating is treated with the hydrochloric acids has a duration of between 2 and 2.5 hours. The process includes treated the coating with the hydrochloric acid at least twice.

Abstract: A solution and method for removing titanium-containing coatings from the surface of substrates using the solution are provided. The solution includes 90-1000 g/L organic or inorganic acid; 70-500 g/L accelerant, the accelerant being acid or salt which contains fluorinion; 15-200 g/L secondary accelerator, the secondary accelerator being generic amino alcohols which can combine with titanium ion; 2-8 g/L inhibiter, the inhibiter being selected from one or more of the group consisting of thiourea, thiourea derivatives, and carbamide. The method for removing titanium-containing coating on the substrate mainly includes contacting the substrate with the titanium-containing coating with the solution.

Abstract: Methods are provided for descaling metallic components devices such as stents. The devices or components are cleaned under ultrasound in a cleaning solution of ammonium hydrogen fluoride at a temperature within a range of about 60° to 80° C., then rinsed at that temperature with an aqueous rinse containing a nonionic surfactant and rinsed again with purified water.

Abstract: A substrate cleaning apparatus is capable of individually setting a threshold value for use in making a check of a resistivity during a rinsing process on a recipe setting screen in each process step. Thus, by setting each threshold value depending on the type of liquid chemical to be used immediately before the rinsing process, the substrate cleaning apparatus can use an optimum threshold value during the rinsing process in each process step to make a check of the resistivity. This allows the proper completion of the rinsing process in each process step.

Abstract: A substrate processing apparatus and a substrate processing method, with which a resist can be removed satisfactorily from the substrate and a processing solution used for removing the resist can be recycled, are provided. The substrate processing apparatus includes: a substrate holding means holding a substrate; a peroxosulfuric acid generating means generating a peroxosulfuric acid using sulfuric acid; a mixing means mixing the peroxosulfuric acid generated by the peroxosulfuric acid generating means and sulfuric acid of higher temperature and higher concentration than the sulfuric acid used in the peroxosulfuric acid generating means; and a discharging means discharging, toward the substrate held by the substrate holding means, the mixed solution of the peroxosulfuric acid and the sulfuric acid mixed by the mixing means as a processing solution for removing a resist from the substrate.

Abstract: The compositions and methods for the removal of residues and contaminants from metal or dielectric surfaces comprises at least one alkyl diphosphonic acid, at least one second acidic substance at a mole ratio of about 1:1 to about 10:1 in water, and pH is adjusted to from about 6 to about 10 with a basic compound, and optionally a surfactant. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates. One of the embodiment is the method of using the compositions in dilution, wherein the solution may be diluted with DI water at dilution ratios, for example, of up to 1:10, up to 1:50, up to 1:100, up to 1:150, up to 1:250, and up to about 1:500 or any ratios therein.

Abstract: Embodiments of the present disclosure include cleaning processes, cleaning machines, and methods of preventing acidification of a cleaning composition in a cleaning process. The cleaning process includes contacting an article having contaminants with a cleaning composition to remove the contaminants from the article, where the cleaning composition comes to have acidic components as a result of contacting the article with the cleaning composition, and where at least 85 percent by weight, based on a total weight of the cleaning composition, of the cleaning composition is an organic solvent, collecting the cleaning composition with the contaminants and the acidic components, separating the contaminants from the cleaning composition (114), and passing the cleaning composition with the acidic components over an ion exchange resin (125) to remove the acidic components from the cleaning composition.

Abstract: The present invention relates to an acidic, aqueous composition which comprises a thiodiglycol alkoxylate for treating metallic surfaces. The invention furthermore relates to the use of one or more compound(s) of the general formula (I) as a corrosion inhibitor.

Abstract: A method for removing common contaminates or residues which include but are not limited to ionic residues, particulate residues and moisture from semiconductor wafers used in the manufacture of IC (integrated circuits), liquid crystal displays and flat panel displays. The process includes the use of certain esters or certain esters combined with particular co-solvents. The cleaning method may be utilized in a variety of cleaning processes or process steps and offers economic and performance advantages.

Abstract: A method of decontaminating an oxide layer-comprising surface of a component or a system of a nuclear facility. An acidic water film is produced on the surface, the film of water is brought into contact with a gaseous acid anhydride, and the oxide layer is treated with gaseous ozone as oxidizing agent.

Abstract: A method for selectively removing an aluminum-poor overlay coating from a substrate of a component, which as a result of its low aluminum content is highly resistant to a selective stripping solution. The method entails diffusing aluminum into the overlay coating to form an aluminum-infused overlay coating having an increased aluminum level in at least an outer surface thereof. The diffusion step is carried out so that the increased aluminum level is sufficient to render the aluminum-infused overlay coating removable by selective stripping. The outer surface of the aluminum-infused overlay coating is then contacted with an aqueous composition to remove the aluminum-infused overlay coating from the substrate. The aqueous composition includes at least one acid having the formula HxAF6, and/or precursors thereof, wherein A is Si, Ge, Ti, Zr, Al, and/or Ga, and x is from 1 to 6.

Abstract: A method is provided, which includes moving a mobile floor cleaning machine along a floor. Onboard the mobile floor cleaning machine, a liquid is sparged by electrolysis. The sparged liquid is dispensed from the mobile floor cleaning machine.

Abstract: Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.

Abstract: Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning methods disclosed not only selectively remove the metallic compound without corroding the equipment, but also improve the ordinary cleaning process. Moreover, the cleaning solvents and the cleaning methods disclosed improve maintenance costs for the supply system because the equipment may be cleaned without being detached from the supply system.

Abstract: A remover composition containing 1,3-propanediamine (a), 1-hydroxyethylidene-1, 1-diphosphonic acid (b) and water, wherein the remover composition contains the component (a) in an amount of from 0.2 to 30% by weight, the component (b) in an amount of from 0.05 to 10% by weight, and the water in an amount of from 60 to 99.75% by weight, and wherein the composition has a pH at 20° C. of from 9 to 13; and a remover composition containing an organic amine (A), an organic phosphonic acid (B), a linear sugar alcohol (C) and water, wherein the remover composition contains the component (A) in an amount of from 0.2 to 30% by weight, the component (B) in an amount of from 0.05 to 10% by weight, the component (C) in an amount of from 0.1 to 10% by weight, and the water in an amount of from 50 to 99.65% by weight, and wherein the composition has a pH at 20° C. of from 9 to 13.

Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

Abstract: Embodiments disclose a method for cleaning a mask having a mask film that is of a surface to which a foreign substance containing silicon oxide adheres. In the method, the mask is retained in a cleaning gas containing diluted hydrofluoric acid vapor at a temperature at which an etching rate to the foreign substance becomes higher than an etching rate to the mask film. Further, in the method, the cleaning gas is supplied to the surface of the mask to etch the foreign substance.

Abstract: A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

Abstract: The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and cobalt-containing film cleaning solutions. In one implementation, a method of cleaning a surface of a cobalt-containing material includes forming a cobalt-containing material over a substrate. The surface of the cobalt-containing material is exposed to an aqueous mixture. The aqueous mixture has an acidic pH and comprises acetic acid, a multiprotic acid, and HF. Other aspects and implementations are contemplated.

Abstract: A method is provided, which includes moving a mobile floor cleaning machine along a floor. Onboard the mobile floor cleaning machine, a liquid is sparged by electrolysis. The sparged liquid is dispensed from the mobile floor cleaning machine.

Abstract: After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.

Abstract: Semiconductor processing compositions for use with silicon wafers having an insulating layers and metallization layers on the wafers comprising water and one or more Troika acids which is also referred to as ?,?-disubstituted trifunctional oximes or ?-(Hydroxyimino) Phosphonoacetic acids, their salts, and their derivatives.

Abstract: Starch is removed from the surface of an article using a multi-step method that includes presoaking the article in an acidic solution to remove the starch from the surface of the article and washing the article in an alkaline solution to clean the article.

Abstract: A ceramic sprayed member-cleaning method which is capable of reliably suppressing desorption and attachment of water. The surface of a ceramic sprayed member and water are chemically bonded to each other, whereby the water is stabilized. Water physically adsorbed on the surface of the ceramic sprayed member is desorbed.

Abstract: Semiconductor wafers are cleaned using a cleaning solution containing an alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is added as further component to the cleaning solution, and the cleaning solution has at the end of cleaning, a composition that differs from the initial composition.

Abstract: Semiconductor processing compositions for use with silicon wafers having an insulating layers, and metallization layers on the wafers comprising water and one or more Troika acids which is also referred to as a, ?-disubstituted trifunctional oximes or ?-(Hydroxyimino) Phosphonoacetic acids, their salts, and their derivatives.

Abstract: A method for removing sand particles from a substrate is described. The method includes the step of treating the substrate with an acid solution comprising HxAF6, wherein A is selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga; and wherein HxAF6 is present at a concentration in the range from about 5 weight percent to about 40 weight percent.

Abstract: A cleaning and sterilizing method for removing organic matter adhered to the surface of an endoscopic camera instrument, and effectively exhibiting bacteria-killing and virus-killing effects of acidic water uses, as a cleaning bath, an alkaline-water-producing electrolysis bath partitioned by a separating membrane and having electrodes on both sides, and conducts preliminary cleaning of an endoscopic camera instrument inserted in the cleaning bath by ultrasonic cleaning with city tap water. Subsequently, saline solution is provided to the electrolysis bath to conduct electrolysis, conduct ultrasonic cleaning with alkaline water obtained by the electrolysis, introduce acidic water in the acidic water generation bath and conduct sterilization-cleaning, and further to conduct ultrasonic cleaning with city tap water. Then, the endoscopic camera instrument is dried with warm air as the case requires.

Abstract: The present invention provides a pickling method of steel sheet and pickling system of steel sheet able to efficiently remove oxide scale from steel sheet. That is, it provides a continuous pickling method of steel sheet having a step A of pickling the steel sheet in a pickling tank, a step B of blowing gas toward at least part of the surfaces of the steel sheet in the air after the step A, and a step C of pickling the steel sheet in a pickling tank after the step B, wherein at step B, the steel sheet is temporarily taken out from the pickling solution and gas is blown to at least part of the surfaces of the steel sheet in the air so as to evaporate the acid solution deposited on the surface of the steel sheet and locally increase the acid concentration to thereby efficiently remove even the stubborn Si oxides included in the oxide scale.

Abstract: An environmentally acceptable and comparatively safe acid cleaning solution containing sulfuric acid, water and amine containing inhibitors that adequately remove oxidation or contaminants from surfaces without excessively damaging equipment. The sulfuric acid is effective in removing impurities and contaminants, while the amine moieties or amine salts reduce the otherwise damaging effect of sulfuric acid on equipment and on human skin and tissue.

Abstract: A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.

Abstract: The present invention relates to medium chain peroxycarboxylic acid compositions of neutral or alkaline pH, to methods of making these compositions, and to methods employing these compositions. The methods include methods of cleaning. The compositions include cleaning compositions.

Abstract: A cleaning solution of the present invention contains a sodium ion, a potassium ion, an iron ion, an ammonium salt of a sulfuric ester represented by General Formula (1), and water, and each content of the sodium ion, the potassium ion, and the iron ion is 1 ppb to 500 ppb. ROSO3—(X)+ (1) where R is an alkyl group with a carbon number of 8-22 or an alkenyl group with a carbon number of 8-22, and (X)+ is an ammonium ion.

Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

Abstract: It relates to a method for removing a surfactant, organic materials and chlorine ions remained on the surface of metal nanoparticles, prepared on an organic solvent phase including a surfactant. The method for cleaning metal nanoparticles herein is efficient to remove organic materials or chlorine ions remained on the surface of the nanoparticles. Not less than 90% of impurities may be removed by this method. As a result, the thickness of a multi layer ceramic capacitor (MLCC) can be reduced and a packing factor can be improved so that it allows thinner multi layer ceramic capacitors and improved utilities of metal nanoparticles as fuel cell catalysts, hydrogenation reaction catalysts, alternative catalysts of platinum (Pt) in chemical reactions and the like.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: The invention relates to a process for the thermochemical cleaning and/or stripping of turbine components, in particular engine components, with the steps: Production of a first gaseous mixture containing HF and H2 in which the part by volume of HF in the mixture of HF and H2 is in the range of 2.5 to 45% by volume, and application of the first gaseous mixture containing HF and H2 on and/or in a turbine component for cleaning and/or stripping this turbine component.

Abstract: A method for removing an undesirable material from an electronic or electrical component and introducing a desirable material in place of the undesirable material. The method can include the replacement of a leaded material found on the component with a no-lead material to meet governmental directives including those of the European Union.

Abstract: An object is to reduce changes in mechanical properties of a gas turbine blade base material during repair or regeneration of a gas turbine blade. For this purpose, a gas turbine blade after being operated is washed by being immersed into a strong alkaline washing solution, and the gas turbine blade after being washed with the strong alkaline washing solution is washed with water. The gas turbine blade after being washed with water is then washed by being immersed into a weak acid washing solution, and the gas turbine blade after being washed with the weak acid washing solution is subjected to heat treatment. The gas turbine blade after the heat treatment is then immersed into a strong acid washing solution, whereby the coating formed on the surface of the gas turbine blade is removed.

Abstract: The present invention relates to the use of at least one alkanesulfonic acid of formula R—SO3H, in which R represents a saturated, linear or branched, hydrocarbon chain containing 1 to 4 carbon atoms, as agent for cleaning cement, mortar, concrete, lime, laitance and other derived products. The invention also relates to a method of cleaning cement, mortar, concrete, lime, laitance and other derived products using at least one alkanesulfonic acid.

Abstract: Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing method that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid.

Abstract: Described is a space-conserving integrated fluid delivery system particularly useful for gas distribution in semiconductor processing equipment. The system includes integrated fluid flow network architecture, and may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded. Subsequent to diffusion bonding, a stainless steel diffusion bonded part may advantageously be treated to enhance corrosion resistance using a series of steps designed to bring more chromium to the surface of the steel.

Abstract: Compositions containing certain organic solvents and a fluorine source are capable of removing photoresist and etching residue.