Abstract: A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble precipitates, and rinsing the photomask with a fluid to remove the insoluble precipitates from the photomask.

Abstract: A substrate cleaning apparatus is capable of individually setting a threshold value for use in making a check of a resistivity during a rinsing process on a recipe setting screen in each process step. Thus, by setting each threshold value depending on the type of liquid chemical to be used immediately before the rinsing process, the substrate cleaning apparatus can use an optimum threshold value during the rinsing process in each process step to make a check of the resistivity. This allows the proper completion of the rinsing process in each process step.

Abstract: A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle ? by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.

Abstract: A method for processing or treating silicon material in carrying out a cleaning or purification process comprises the following steps: wetting bulk silicon material, facing a first direction with a first liquid process medium, automatic changing of an orientation of the bulk silicon material by turning bulk silicon material with a turning device and wetting the bulk silicon material in the altered orientation with the first liquid medium. After that, the bulk silicon material is cleaned in a corresponding cleaning device.

Abstract: A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors.

Abstract: A method for treating a surface of a quartz substrate includes preparing a substrate to provide a working surface having an initial roughness; and then ultrasonically acid-etching the working surface to increase the roughness of the working surface by at least about 10%. In one embodiment, the initial surface roughness is greater than about 10 Ra, and in another embodiment the initial surface roughness is greater than about 200 Ra. In a still further embodiment, the initial surface area, if less than about 200 Ra, is increased to greater than about 200 Ra. In other embodiments of the present invention, the working surface roughness is increased by at least about 25% or at least about 50%. Simultaneous with the increase in surface area (as measured by the roughness), the surface defects are reduced to reduce particulate contamination from the substrate.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce defects when employed as a rinse solution either during or after the development of the CMP processing. Also disclosed is a method for reducing the number of defects on a plurality of post-CMP processed substrates employing the process solution of the present invention.

Abstract: Described are methods, systems, and chemistries for cleaning various components of semiconductor process equipment. A method in accordance with one embodiment cleans articles with differently contaminated interior and exterior surfaces by using those articles to separate a cleaning vessel into separate chambers, one chamber for the interior surface and one for the exterior surface. Different chemistries are then applied to the differently contaminated surfaces. This embodiment reduces the required volume of etchant, and consequently saves the cost, treatment, and disposal of toxic chemicals. One embodiment further reduces the requisite etchant volume using one or more volume-displacement elements that displace some of the etchant volume.

Abstract: The present invention is a method for processing a metal component comprising exposing a carbide-based coating to fluoride ions, thereby extracting a carbide material from the carbide-based coating to provide a residual coating on the metal component, and removing the residual coating from the metal component.

Abstract: A method for forming a high-K material layer in a semiconductor device fabrication process including providing a silicon semiconductor substrate or thermally growing interfacial oxide layer comprising silicon dioxide over the silicon substrate; treating with an aqueous base solution or nitridation and depositing a high-K material layer.

Abstract: A method for removing a etch residue (e.g., polymer or particle) from a semiconductor structure and using a cleaning chemistry and the composition of the chemistry is described. By providing a semiconductor structure with etch residue on it, the semiconductor substrate is then placed in a chemistry to remove the particle, wherein the chemistry comprises dilute hydrofluoric acid and a carboxylic acid. In one embodiment the carboxylic acid is selected from tartaric acid, acetic acid, citric acid, glycolic acid, oxalic acid, salicyclic acid, or phthalic acid, and the dilute hydrofluoric acid is approximately 0.1 weight % of hydrofluoric acid.

Abstract: A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.

Abstract: A method for etching a pattern in a material in precise target areas comprising depositing selectively onto the material droplets of a substance for dissolving or reacting chemically with the material. Droplets may be deposited from a print head of the type having a nozzle from which the material may be ejected as a series of droplets, such as an ink jet print head. In a preferred application, a series of ridges can be etched from an organic insulator layer overlying a photoemissive organic polymer. A conductive layer is then deposited and the ridges of organic insulator are dissolved by solvent washing to provide an array of conductive stripes which can be used as a cathode for an electroluminescent display device. In combination, both anode and cathode can be fabricated for a display device without the need for photolithography, which is particularly advantageous for the fabrication of large area display devices.

Abstract: A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-sacrificial material in a process chamber at a pressure and at a temperature; (b) introducing a gas phase mixture comprising a halide-containing species and an alcohol vapor selected from a group consisting of ethanol, 1-propanol, and an aliphatic alcohol having four carbon groups into the process chamber, the gas phase mixture having a volumetric ratio of the halide-containing species to the alcohol vapor of approximately 2 or less; and (c) etching the sacrificial oxide with the gas phase mixture. In another aspect, the invention is a system for carrying out the method.

Abstract: Cleaning compositions and methods in connection with cobalt-based capping of interconnects in integrated circuit semiconductor devices.

Abstract: A method for cleaning oxide from the interconnects of a semiconductor that are comprised of nickel (Ni) silicide or nickel-silicide alloys where nickel is the primary metallic component is disclosed. The cleaning comprises performing an SC1 cycle, exposing the wafer comprising a NiSi contact to an SC1 solution. This removes oxygen atoms from the silicon oxide of the nickel silicide. Next, a rinse cycle is performed on the wafer to remove the SC1 solution. Finally, an HCl cycle is performed. During this cycle, the wafer comprising an NiSi contact is introduced to an HCl solution, removing oxygen atoms from the nickel oxide of the NiSi. The method of the present invention provides for lower contact resistance of NiSi semiconductor devices, facilitating semiconductor devices that have the benefits of miniaturization allowed by the NiSi technology, and higher performance due to the reduced contact resistance.

Abstract: Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.

Abstract: A method of manufacturing a semiconductor device has polishing a film, and cleaning a polished surface by carrying out a first exposing the polished surface to an acidic first cleaning fluid having an effect of etching at least a partial region of the polished surface, and a second exposing the polished surface to an alkaline second cleaning fluid after the first exposing.

Abstract: A method of forming a gate insulation film 4 comprising a hafnium silicate material with a SiO2 equivalent oxide thickness of 1.45 nm or less on a silicon substrate 1 is disclosed. The method includes the steps of: cleaning a surface of the silicon substrate 1 to establish thereon a clean surface on which substantially no oxygen is present; forming a hafnium silicate film 2 on the clean surface of the silicon substrate 1 by a CVD process using an amide type organic hafnium compound and a silicon-containing raw material; applying an oxidation treatment to the hafnium silicate film 2, and applying a nitriding treatment to the hafnium silicate film 2 after applying the oxidation treatment. According to the method, a gate insulation film with favorable surface roughness can be obtained even if the film thickness is thin.

Abstract: Apparatus to clean silicon electrode assembly surfaces which controls or eliminates possible chemical attack of electrode assembly bonding materials, and eliminates direct handling contact with the parts to be cleaned during acid treatment, spray rinse, blow dry, bake and bagging. Aspects of the apparatus include a kit including an electrode carrier to hold an electrode assembly, a treatment stand to allow access to the electrode assembly, a spider plate to clamp the electrode assembly in the electrode carrier, a nitrogen purge plate to supply nitrogen gas to the backside of the electrode assembly during acid cleaning of the electrode, a water rinse plate to supply water to the electrode face, a blow dry plate to supply nitrogen to dry the electrode assembly and a bake stand to support the electrode assembly during a bake before placing the clean electrode assembly in a bag.

Abstract: This invention relates to a plumbing device made of a copper alloy containing nickel salt, that includes a valve and a tube coupling having at least a liquid-contacting part washed with a cleaning fluid incorporating therein nitric acid and hydrochloric acid as an inhibitor under conditions of a temperature and a duration permitting effective removal of nickel salt, thereby performing nickel salt-removing treatment and causing the hydrochloric acid to form a coating film on the surface of the liquid-contacting part thereby effectively precluding elution of nickel salt from the surface of the liquid-contacting part in the presence of the coating film, wherein the nitric acid has a concentration c in a range of 0.5 wt %<c<7 wt % and the hydrochloric acid has a concentration d in a range of 0.05 wt %<d<0.7 wt % in the cleaning fluid, wherein the temperature is set to 10° C.?x 50° C., and wherein nickel salt is removed with the cleaning fluid.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

Abstract: A method of etching and cleaning objects contained in a vessel, includes etching the objects by providing etching solution into the vessel, forcing out the etching solution from the vessel by providing pressurized gas into the vessel; cleaning the objects by providing cleaning solution into the vessel; and draining the cleaning solution from the vessel. By forcing out the etching solution with a pressurized gas such as nitrogen gas, there is no density difference of the etching solution in contact with the objects, leading to uniform etching of the objects.

Abstract: Disclosed is a method for selectively removing a coating from a substrate. Aluminum is diffused into the coating. The coating is contacted with an aqueous composition including at least one of an acid having the formula HxAF6, and precursors to the acid, A being selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga, and x being 1-6. The coating being removed is often an McrAl(X) material. The substrate is a metal, usually a superalloy.

Abstract: A process for treating metal to remove oxidation or contaminants or prepare the metal for processing without unduly damaging the metal. A formulation of sulfuric acid, water, and either ammonia or a sulfate salt of ammonia (or both) is used to treat the metal. The sulfuric acid is effective in removing impurities and contaminants, while the ammonia or ammonia salt reduces the otherwise damaging effect sulfuric acid has on metal.

Abstract: The present invention relates to a method for cleaning solar cell substrates comprising (S11) slicing an ingot for manufacturing solar cell substrates, which is hung from a slicing machine, into a plurality of substrates, and placing the substrates into a cleaning machine as the substrates are vertically hung down from the slicing machine parallel to each other; (S12) removing the cutting oil remaining on surfaces of the substrates placed vertically; (S13) activating the surfaces of the substrates for better cleaning of the surfaces of the substrates; and (S14) chemically etching the active surfaces of the substrates. The cleaning process is performed on the substrates directly as the substrates are placed in the slicing process. Therefore, the present invention prevents breakage or additional contamination of the substrates which may occur in an intermediate handling process, and effectively removes slurry between adjacent substrates and various stains on the surfaces of the substrates.

Abstract: In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas in a liquid stream, spray or jet impinging on the workpiece. The process gas, which may be ozone, is entrained in the liquid via entrainment nozzles. Use of entrainment and diffusion together increases the amount of gas available for reaction at the workpiece surface, increases the reaction rate, and decreases required process times.

Abstract: An acidic detergent composition can be used for removing soils on articles in a dish machine. The acidic detergent composition may be inserted into a dish machine dispenser and a use solution may be formed that contacts a soil on an article and removes the soil on the article. The composition comprises an acid and a surfactant. The composition may be a solid, liquid, gel, paste or pellet.

Abstract: The present invention relates to a composition for the removal of so-called “sidewall residues” from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the production of semiconductor elements.

Abstract: A cleaning method includes: producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning a workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece. A method for manufacturing an electronic device includes: producing a workpiece; producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning the workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece.

Abstract: The invention relates to a method of decontaminating an oxide layer-comprising surface of a component or a system of a nuclear facility, wherein the oxide layer is treated with gaseous nitrogen oxide (NOx) as oxidizing agent.

Abstract: A sulfur-containing detergent composition for cleaning a semiconductor device having an aluminum wire, wherein the sulfur-containing detergent composition is capable of forming a protective film containing a sulfur atom on a surface of an aluminum film in a protective film-forming test; a semiconductor device comprising a protective film containing a sulfur atom on a surface of an aluminum wire, wherein sulfur atom is contained within a region of at least 5 nm in its thickness direction from the surface of the protective film; and method for manufacturing a semiconductor device, comprising the step of contacting an aluminum wire of the semiconductor device with the sulfur-containing detergent composition as defined above, thereby forming a sulfur-containing protective film on the surface of the aluminum wire. The semiconductor device can be suitably used in the manufacture of electronic parts such as LCD, memory and CPU.

Abstract: A method of thinning a silicon wafer in a controllable cost-effective manner with minimal chemical consumption. The wafer is placed into a process chamber, after which ozone gas and HF vapor are delivered into the process chamber to react with a silicon surface of the wafer. The ozone and HF vapor may be delivered sequentially, or may be mixed with one another before entering the process chamber. The ozone oxidizes the silicon surface of the wafer, while the HF vapor etches the oxidized silicon away from the wafer. The etched oxidized silicon is then removed from the process chamber. As a result, the wafer is thinned, which aids in preventing heat build-up in the wafer, and also makes the wafer easier to handle and cheaper to package. In alternative embodiments, HF may be delivered into the process chamber as an anhydrous gas or in aqueous form.

Abstract: Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic acid, formic acid, acetic acid, citric acid, and mixtures thereof.

Abstract: Described herein is a method of removing an organic-containing material from an exposed surface of a large substrate (at least 0.25 m2). The substrate may comprise an electronic device. The exposed surface is treated with a stripping solution comprising ozone (O3) in a solvent, where the solvent comprises acetic anhydride. The stripping solvent used to form the stripping solution may comprise a mixture of acetic anhydride with a co-solvent selected from the group consisting of a carbonate containing 2-4 carbon atoms, ethylene glycol diacetate, and combinations thereof. In some instances, the stripping solution may contain only acetic anhydride and ozone, where the ozone concentration is typically about 300 ppm or greater.

Abstract: A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.

Abstract: The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.

Abstract: A degreasing method for descaling or removing laser scales from iron-containing metal part surface by treating the iron-containing metal part surfaces that is optionally tainted with laser scales with an aqueous solution containing at least one type of highly water-soluble and complexed with Fe ions carboxylic acid, at least one type of salt of at least one type of carboxylic acid exhibiting the same action and at least one type of fatty amine ethoxylate, wherein the solution is buffered, the Fe ions are carried into the solution and at least partially complexed, increasing the pH value of the solution for descaling with respect to at least one type of carboxylic acid. The entire concentration of carboxylic acids and the salts thereof is increased for descaling by 2 to 20% by weight.

Abstract: The present invention relates to a method for cleaning a silicon wafer, including (S1) a first cleaning step for cleaning surfaces of a silicon wafer using an SC-1 cleaning solution according to standard clean 1; (S2) a second cleaning step for cleaning the surfaces of the silicon wafer, cleaned in the first cleaning step, using an SC-2 cleaning solution according to standard clean 2; (S3) a third cleaning step for cleaning the surfaces of the silicon wafer, cleaned in the second cleaning step, using a hydrogen fluoride (HF) solution; and (S4) a fourth cleaning step for cleaning the surfaces of the silicon wafer, cleaned in the third cleaning step, using an ozone water. The present invention removes effectively metallic impurities on the surfaces of the silicon wafer and improves the surface roughness of the silicon wafer, and thus is capable of providing a silicon wafer with a remarkably improved physical characteristic.

Abstract: A cleaning solution for removing copper complex residues from the surface of polishing pads and wafer substrates includes an amine pH-adjusting agent, which can be a unidentate or bidentate amine compound or a quartnary ammonium hydroxide compound or an amine including an alcohol group. The cleaning solution also includes an amino acid complexing agent and an inhibitor. In a preferred embodiment, the cleaning solution has a basic pH.

Abstract: A process for cleaning (e.g., desmutting) an aluminum surface, using compositions free of nitric acid and chromic acid and comprising, in one embodiment, an oxidant and at least one mineral acid salt. In another embodiment, the process uses a composition free of nitric acid and chromic acid and comprising an oxidant, at least one mineral acid salt, and a complexing agent which is a salt of an organic acid. Due at least in part to the absence of nitric and chromic acids, and in particular, strong mineral acids, the cleaning processes of the present invention remove smut residues from aluminum surfaces without significant etching of the aluminum.

Abstract: A method of cleaning equipment such as heat exchangers, evaporators, tanks and other industrial equipment using clean-in-place procedures and a pre-treatment solution prior to the conventional CIP cleaning process. The pre-treatment step improves the degree of softening of the soil, and thus facilitates its removal. The pre-treatment solution can be a strong acidic solution, a strong alkaline solution, or comprise a penetrant. A preferred strong acidic solution is an acid peroxide solution. In some embodiments, the pre-treatment may include no strong alkali or acid ingredient; rather, the penetrant provides acceptable levels of pre-treatment.

Abstract: Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

Abstract: A cleaning method for improving a wafer surface polluted by metal ions is disclosed. This method is to install an ion change filter in a pipeline, in which deionized water runs, to reduce the number of metal ions to be less than 0.1 ppb, so as to avoid that the metal ions of deionized water remains on the surface of the wafer during the process in cleaning the wafer and diffuses in the thermal oxidation process afterwards to affect the quality of oxide film.

Abstract: The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and cobalt-containing film cleaning solutions. In one implementation, a method of cleaning a surface of a cobalt-containing material includes forming a cobalt-containing material over a substrate. The surface of the cobalt-containing material is exposed to an aqueous mixture. The aqueous mixture has an acidic pH and comprises acetic acid, a multiprotic acid, and HF. Other aspects and implementations are contemplated.

Abstract: A technique is provided to precludes elution of the nickel by infallibly removing the nickel adhering to the inner surface of plumbing hardware, realize a treatment for efficient (treating temperature, treating duration, etc.) preclusion of both or either of lead and nickel and perform a neutralizing treatment on the varying fluid used in the treatment for precluding elution, thereby rendering the fluid usable as industrial water, permitting a generous cut in cost and allowing thorough observance of the influence on the environment.

Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: Chemical method of cleaning metallic residue from forming tools utilizing the application of a caustic material including base or mild acid to the tool for a short period of time. The caustic material is held in substantially fixed relation for a period of time to dislodge the metallic residue followed by neutralization or removal.

Abstract: A system and method of economically converting a spent first pickling acid solution that contains hydrochloric acid, water and ferrous chloride into a suitable second pickling solution. Sulfuric acid is added to the first pickling acid solution. This produces a regeneration solution. In the regeneration solution, the sulfuric acid reacts with said ferrous chloride and water to produce ferrous sulfate heptahydrate and hydrochloric acid. The regeneration solution is cooled to promote precipitation of the ferrous sulfate heptahydrate from the regeneration solution, therein creating ferrous sulfate heptahydrate crystals and a second pickling acid solution. The second pickling acid solution contains both hydrochloric acid and sulfuric acid. The ferrous sulfate heptahydrate crystals are separated from second pickling solution. The ferrous sulfate heptahydrate is sold commercially and the second pickling acid solution is used to directly pickle ferrous metal.

Abstract: A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of ?1 to 3.