Abstract: A method for cleaning a glass substrate before photoresist coating, which method can remove oxide compounds and organic residues from the surface of a metal layer of the glass substrate, comprises the steps of firstly providing an alkaline developer in a concentration of between 0.35% and 0.45%; later immersing the metal film of the glass substrate in the alkaline developer; then rinsing the metal film of the glass substrate after immersed with clean water; and lastly having the surface of the metal film of the glass substrate in a dry treatment.

Abstract: An apparatus for generating a fluid meniscus to process a substrate is provided. The apparatus includes a manifold head with a manifold surface having a plurality of conduits configured to generate a fluid meniscus on a substrate surface when positioned proximate the substrate. The manifold head has a plurality of passages capable of communicating fluids with the plurality of conduits. The apparatus also includes an interface membrane attached to a portion of the manifold head. The interface membrane is configured to block a portion of the plurality of conduits during operation.

Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a proximity head having a surface that can be interfaced in proximity to a surface of a substrate. The proximity head has a plurality of dispensing ports capable of dispensing a first process mixture and a second process mixture to the surface of the substrate. The proximity head also has a plurality of removal ports capable of removing the first and second process mixtures from the surface of the substrate. The apparatus also has a distribution manifold connected to the plurality of dispensing ports for dispensing the first process mixture and second process mixture. The distribution manifold is connected to the plurality of removal ports, and is structured to define selected regions of the proximity head for delivery and removal of the first process mixture and the second process mixture.

Abstract: A method an apparatus for drying a wafer, and an apparatus for cleaning and drying a wafer are provided. In the apparatus for cleaning and drying a wafer, the wafer is dipped into a cleaning solution in a cleaning tank. The wafer is then dried using a drying gas in a drying chamber disposed over the cleaning tank. A shutter separates the cleaning tank from the drying tank. A wafer boat moves the wafer vertically between the cleaning tank and the drying tank. Nozzles for providing the cleaning solution onto the wafer are disposed at both inner sides of the drying tank. The nozzles are connected to a drying gas supply unit to alternately and periodically provide the drying gas onto the wafer.

Abstract: A head is provided which includes a first surface of the head capable of being in close proximity to the wafer surface, and includes a first conduit region on the head where the first conduit region is defined for delivery of a first fluid to wafer of the surface and the first conduit region is defined in a center portion of the head. The head further includes a second conduit region on the head which surrounds the first conduit region, and includes a third conduit region on the head which is defined for delivery of a second fluid to the wafer surface. The third conduit region semi-encloses the first conduit region and the second conduit region. The second conduit region enables a removal of the first fluid and the second fluid. The delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus.

Abstract: Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Abstract: A dishwasher apparatus is provided with a housing including an interior area configured to receive dishware. The housing further includes a door configured to provide selective access into the interior area. The dishwasher apparatus further includes a fan configured to encourage air flow through a portion of the interior area during a drying cycle.

Abstract: The substrate processing apparatus has substrate holding mechanisms (14) for holding the substrate (W) under a holding force which is changed according to a rotational speed of the substrate holding mechanisms (14), a substrate rotation mechanism (22) for rotating the substrate holding mechanisms (14) to rotate the substrate (W) held by the substrate holding mechanisms (14), and a treatment liquid supply mechanism (12, 15, 19) for supplying a treatment liquid to a desired portion of the substrate (W) held by the substrate holding mechanisms (14).

Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.

Abstract: A substrate processing apparatus includes a substrate holding unit for holding a substrate to be processed substantially horizontally, a process liquid nozzle for supplying a process liquid to a main surface of the substrate held by the substrate holding unit, a gas nozzle for supplying an inert gas to the main surface of the substrate held by the substrate holding unit, a gas nozzle moving unit for moving the gas nozzle along the main surface, and a control unit for carrying out a liquid film forming process for forming a liquid film of the process liquid on a whole area of the main surface of the substrate held by the substrate holding unit by supplying the process liquid from the process liquid nozzle to the main surface of the substrate, and a liquid film free region forming process for forming a liquid film free region from which the liquid film is removed away in a region of the main surface not including a center of the main surface by supplying an inert gas to the main surface on which the liquid film

Abstract: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

Abstract: A apparatus for drying a substrate includes a vacuum manifold positioned adjacent to an edge wheel. The edge wheel includes an edge wheel groove for receiving a peripheral edge of a substrate, and the edge wheel is capable of rotating the substrate at a desired set velocity. The vacuum manifold includes a proximity end having one or more vacuum ports defined therein. The proximity end is positioned at least partially within the edge wheel groove, and using supplied vacuum removes fluids that accumulate in the edge wheel groove and prevents re-deposit of trapped fluids around the peripheral edge of the substrate.

Abstract: Ventilation system for household appliances, in particular for washing machines, including a device having at least a chamber for housing an impeller, a suction duct, through which a first fluid, in particular damp air, is sucked into the chamber by the impeller, an ejection duct, through which the first fluid sucked into the chamber is expelled from it by the impeller, a first movable shuttering for obstructing the suction duct at least partially, the first shutter being movable at least partially inside the suction duct, and a first actuator for producing the motion of the first shutter. According to the invention, after operation of the first actuator the first shutter is capable of performing movements having at least a linear component, the linear component extending in the same axial direction of the suction duct.

Abstract: A substrate treatment apparatus according to the present invention includes: a plate to be positioned in spaced opposed relation to one surface of a substrate and having a plurality of outlet ports and a plurality of suction ports provided in an opposed surface thereof to be opposed to the one surface of the substrate; a rinse liquid supplying unit which supplies a rinse liquid containing deionized water to the outlet ports of the plate; a suction unit which evacuates the suction ports of the plate; a drying promoting fluid supplying unit which supplies a drying promoting fluid to the one surface of the substrate to promote drying of the substrate; a substrate holding unit to be positioned on the other surface of the substrate opposite from the one surface for holding the substrate; and a supply controlling unit which controls the rinse liquid supplying unit to discharge the rinse liquid from the outlet ports toward the one surface of the substrate to seal a space defined between the one surface and the oppos

Abstract: A wafer drying method includes submerging a wafer in a cleaning solution in a dry chamber. An organic liquid vapor from an organic liquid is supplied into the dry chamber at a first volumetric supply rate to form an organic liquid layer on a surface of the cleaning solution, the organic liquid layer having at least a prescribed concentration of the organic liquid. The organic liquid vapor is supplied into the dry chamber at a second volumetric supply rate that is lower than the first volumetric supply rate. During and/or following the supplying of the organic liquid vapor into the dry chamber, at least a portion of the wafer is removed from the cleaning solution through the organic liquid layer.

Abstract: After rinsing, while rotating a substrate, a front layer part of a rinsing liquid (DIW) adhering to a substrate surface is drained and removed from the substrate surface. This is followed by supply to the substrate surface of a liquid mixture which is obtained by mixing IPA and DIW together. Since a majority of the rinsing liquid on the substrate surface is removed off from the substrate surface, even when micro patterns are formed on the substrate surface, the liquid mixture replaces the liquid component adhering to the gaps between the patterns. Further, the IPA concentration in the liquid mixture supplied to the substrate surface is set to 50% or below.

Abstract: Provided is an apparatus for cleaning and drying a substrate by applying a plurality of chemicals and gases to the substrate. The apparatus may include: a substrate support member including a chuck receiving a substrate; a first nozzle member injecting a drying fluid onto a top surface of the substrate for drying the substrate; a low cover including an opened top and enclosing the chuck; and an upper cover selectively closing the opened top of the low cover so as to dry the substrate in a closed space. Therefore, the apparatus dries a substrate more efficiently and protects the substrate from being contaminated by foreign pollutants. Furthermore, generation of an undesired oxidation layer on the substrate can be prevented.

Abstract: An apparatus for generating a fluid meniscus to be formed on a surface of a substrate is provided including a housing where the housing includes a housing surface to be placed proximate to a substrate surface of the substrate. The housing further includes a process configuration receiving region that is surrounded by the housing surface. The apparatus also includes a process configuration insert which has an insert surface where the process configuration insert is defined to fit within the process configuration receiving region of the housing such that the insert surface and the housing surface define a proximity face that can be placed proximate to the substrate surface of the substrate.

Abstract: A rinsing liquid adheres in a piled up state to the entire front surface of the substrate which is rinsed with the rinsing liquid discharged from a rinse nozzle, thereby forming a so-called puddle-like rinse layer. An opposed surface of a proximity block is positioned in the vicinity of a front surface of a substrate and a liquid-tight layer is formed in a gap space between the opposed surface and the front surface of the substrate. In a condition that the liquid-tight layer is formed, the proximity block moves in the moving direction, and a solvent gas containing a solvent component, which dissolves in the liquid to reduce a surface tension, is supplied toward an upstream-side edge of the liquid-tight layer.

Abstract: A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.

Abstract: A method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

Abstract: An apparatus for cleaning a wafer includes a plurality of holders for contacting and securing peripheral portions of a wafer, and for rotating the wafer, a first plate disposed to face a first surface of the wafer, the first plate having a plurality of first nozzles for spraying a first cleaning solution onto the first surface of the wafer, and a second plate disposed to face a second surface of the wafer that is opposite to the first surface, the second plate having a plurality of second nozzles for spraying a second cleaning solution onto the second surface of the wafer. In operation, the first and second plates and the wafer are rotated in opposite directions. The opposite rotation causes the cleaning solutions to flow abruptly thereby increasing a frictional force between the surfaces on the wafer and the cleaning solutions to improve the efficiency of the cleaning process.

Abstract: An apparatus for cleaning semiconductor wafers includes a chamber, a bubbler having a vapor generating part for generating alcohol vapor and a spray pipe for spraying the alcohol vapor into the chamber, a gas supply nozzle for spraying gas into the chamber to dry the wafers, a liquid supply nozzle for supplying cleaning liquid into the chamber and a discharge system. The spray pipe of the bubbler has a liquid retention portion that keeps condensate of the alcohol vapor from issuing into the chamber. The gas supply nozzle has a spray outlet configured to spray the same amount of the drying gas onto all of the wafers in the chamber. The liquid supply nozzle has liquid supply openings only in a side portion thereof so that liquid alcohol will not become trapped therein.

Abstract: A system and method for processing a wafer includes applying a process to the wafer. The process being supported by a surface tension gradient device. A result of the process is monitored. The monitored result is output.

Abstract: In a substrate transfer robot and a substrate cleaning apparatus, the substrate transfer robot transfers substrates between a container supported by a load port and a processing module for cleaning the substrates. The substrate transfer robot includes a driving member that provides a driving force to transfer the substrates, a blade that transfers the substrates using the driving force, and a sensor that senses impurities existing on the blade. When the impurities are detected, a controller can control the operation of the driving member. Thus, the contamination of other substrates in the container can be effectively prevented.

Abstract: A substrate drying apparatus, including a cleaning bath having a liquid supply unit, a drying tank having a gas supply unit and at least one nozzle in fluid communication with the gas supply unit, and a transfer unit for transferring a substrate from the cleaning bath to the drying tank. The apparatus of the present invention may be used in a substrate drying method, including supplying alternating dry gas mixture and inert gas to dry a substrate.

Abstract: One of many embodiments of a substrate preparation system is provided which includes a drying system, the drying system including at least one proximity head for drying a substrate. The system also includes a cleaning system for cleaning the substrate.

Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously.

Abstract: A head is provided which includes a first surface of the head capable of being in close proximity to the wafer surface, and includes a first conduit region on the head where the first conduit region is defined for delivery of a first fluid to wafer of the surface and the first conduit region is defined in a center portion of the head. The head further includes a second conduit region on the head which surrounds the first conduit region, and includes a third conduit region on the head which is defined for delivery of a second fluid to the wafer surface. The third conduit region semi-encloses the first conduit region and the second conduit region. The second conduit region enables a removal of the first fluid and the second fluid. The delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus.

Abstract: A fluid particle cleaner and method are disclosed. The invention provides a partition to a side of a fluid nozzle to form: a central cavity configured to define the fluid departing the surface into a central cavity vortex; and a side cavity adjacent the central cavity to define fluid escaping from the central cavity into a side vortex. The vortices interact in a counter-rotating and stationary fashion. The strong and smaller central vortex creates an upward air velocity field that forces any airborne particle to move away from the surface. The side vortex is designed to: connect the central vortex velocity field to the vacuum flow and allow airborne particles to remain suspended until they reach the vacuum flow; and create a decelerating field for high speed particles traveling parallel (horizontally) to the surface to increase the residence time in the central vortex with positive vertical velocity.

Abstract: There are provided a substrate drying method and apparatus by which an attachment amount of particles to surfaces of substrates can be reduced when the substrates are exposed from pure water, and occurrence of non-uniform drying can be prevented by improving drying efficiency of the substrates. Air or an inert gas, and gaseous or droplet-like isopropyl alcohol (hereinafter, referred to as IPA) are supplied into a space on a liquid level of the pure water in a drying chamber, and pure water on a liquid level side is drained from the liquid level or the vicinity of the liquid level of the pure water, while raising the pure water in which the substrates are immersed together with the substrates, the substrates are exposed from the pure water above the liquid level in the drying chamber, and, at the same time, the pure water held on the exposed surfaces of the substrates is replaced by IPA, whereby the substrates are dried.

Abstract: An apparatus for drying a generally flat substrate that has been cleaned has a rotatable support for supporting the substrate, a substrate drying assembly, and a controller. The substrate drying assembly includes a substrate drying assembly support arm, an outlet for applying liquid to an upper surface of the substrate, and an outlet for applying a drying vapor to the upper surface of the substrate. The substrate drying assembly is configured to position the liquid applying outlet and to position the vapor applying outlet above a portion of the substrate. The controller causes the substrate drying assembly to be retracted over the upper surface of the substrate at a faster rate near a center of the substrate than near a periphery of the substrate.

Abstract: A combination fluid and air washing apparatus for washing a vehicle's viewing surface. The apparatus includes a housing, a nozzle assembly with at least one fluid nozzle and at least one air nozzle corresponding to each of fluid nozzles. A shaft is pivotally attached to the housing. The fluid and air nozzles are adjacently attached to the shaft and point towards the vehicle viewing surface. The air nozzle points lower on the vehicle viewing surface than the fluid nozzle. A pressured lines provides pressured air to the washing apparatus. The air compressor provides pressured air to the fluid reservoir forcing the fluid through the fluid nozzle and the air compressor simultaneously provides pressured air through the line to the air nozzle. Thus, the vehicle's viewing surface with the fluid and the fluid washes the vehicle's viewing surface and the air dries the vehicle's viewing surface.

Abstract: A method of fabrication of a semiconductor integrated circuit device, calls for disposing, in an ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fiber membranes composed of a polysulfone membrane or polyimide membrane, bonding the plurality of hollow fiber membranes at end portions thereof by hot welding, and by this hot welding, simultaneously adhering the hollow fiber membranes to the body. Upon preparation of ultrapure water to be used for the fabrication of the semiconductor integrated circuit device, it is possible to prevent run-off of ionized amine into the ultrapure water.

Abstract: A method of forming a dynamic liquid meniscus includes forming a meniscus at a first size, the meniscus being formed between a proximity head and a first surface and changing the meniscus to a second size by modulating a flow through at least one of a set of ports on the proximity head. A system for modulating flow through the ports in a proximity head is also described.

Abstract: A device for drying substrates which stores a plurality of substrate (1) and which comprises a processing container (3) to which cleaning fluid (2) after cleaning the substrates (1) is drained and an injection nozzle (5) for injecting drying fluid located at the terminating part of a feed pipe (4) through which liquid drying fluid is supplied, whereby an exhaust equipment is eliminated or simplified, and the drying fluid is fed smoothly.

Abstract: An apparatus and method for automatically collecting metallic impurities of a semiconductor wafer. In one aspect, an apparatus includes an air tight process chamber including a loading unit for loading the semiconductor wafer and unloading unit for unloading the semiconductor wafer; a vapor phase decomposition unit disposed in the process chamber for decomposing a silicon oxide layer on the semiconductor wafer; and a scanning unit disposed in the process chamber for scanning the semiconductor wafer to collect the metallic impurities. The scanning unit includes a scanning solution bottle for obtaining scanning solution that is used for absorbing metallic impurities on the semiconductor wafer; a scanning arm capable of downward, upward, and rotational movement; and a nozzle coupled to the scanning arm for drawing in scanning solution from the scanning solution bottle, and for forming a droplet of scanning solution that cohers to the nozzle when scanning a semiconductor wafer to collect metallic impurities.

Abstract: The invention provides an ultrasonic cleaning module and a method for cleaning singulated electronic packages. The module comprises a cutting chuck having a surface with a plurality of cutting recesses defined in it for enabling a cutting device to separate individual electronic packages from a substrate having a plurality of electronic packages on the surface of the chuck. A pulsator nozzle is supported above the chuck and the separated electronic packages on the chuck such that the pulsator nozzle may emit fluid toward the packages. An ultrasonic generator is associated with the nozzle that is adapted to ultrasonically energize fluid that passes through the nozzle to enhance cleaning of the packages.

Abstract: An apparatus for collecting impurities on a semiconductor wafer includes an airtight process chamber, a rotary chuck disposed in the process chamber for rotating and horizontally supporting the semiconductor wafer, a first scanning unit for forming a droplet of a first scanning solution and for scanning an upper surface of the semiconductor wafer rotated by the rotary chuck with the droplet to collect first impurities, a driving unit for tilting the rotary chuck and the semiconductor wafer supported on the rotary chuck, and a second scanning unit for receiving a second scanning solution for collecting second impurities from an edge portion of the semiconductor wafer, the second scanning solution being in contact with the edge portion of the semiconductor wafer tilted by the driving unit and rotated by the rotary chuck so that the second scanning solution scans the edge portion of the semiconductor wafer.

Abstract: A slurry tank autocleaner for cleaning an empty slurry tank. A first pipe is inserted in the interior of the slurry tank, where the first pipe has an open end located inside the slurry tank. A first nozzle is disposed on the open end of the first pipe. A cover is used to cover the slurry tank, where the cover has a plurality of second nozzles targeting the slurry tank. A second pipe is connected to the second nozzles. A controller is used to control chemical, pure water or dry gas to spurt from the first nozzle and the second nozzles through the first pipe and the second pipe. Thus, the slurry tank can be automatically cleaned.

Abstract: The present invention is related to a method and apparatus for liquid treating and drying a substrate, such as a semiconductor wafer, the method comprising the step of immersing a substrate or a batch of substrates in a tank filled with a liquid, and removing the substrate(s) through an opening so that a flow of the liquid takes place through the opening during removal of the substrate. Simultaneously with the removal, a reduction of the surface tension of the liquid is caused to take place near the intersection line between the liquid and the substrate. For acquiring such a tensio-active effect, a uniform flow of a gas or vapor is used, or/and a local application of heat. The invention is equally related to an apparatus for performing the method of the invention.

Abstract: An apparatus and method for drying substrates. The inventive apparatus comprises: an object support member for supporting at least one substrate in a process tank having one or more support sections comprising capillary material. The inventive method is a method of removing liquid from a wet substrate in a process tank comprising contacting the wet substrate with capillary material. In another aspect, the invention is a method of drying at least one substrate having a surface in a process tank comprising: submerging the substrate in a liquid having a liquid level; supporting the submerged substrates in the process tank; supplying a drying vapor above the liquid level; lowering the liquid level or raising the substrate so that the liquid level is below the substrate, thereby removing a major portion of liquid from the substrate surface; and removing remaining liquid from the substrate surface with capillary material.

Abstract: The substrate drying apparatus has a substrate processing vessel 1, a substrate supporting section for supporting plural substrates 2 in a standing condition and lined up condition in the interior of the substrate processing vessel 1, fluid reservoir section 3 for drying provided at an upward predetermined position of the substrate processing vessel 1, a first inert gas supplying section 4 for blowing inert gas against the drying fluid 6 pooled in the fluid reservoir section 3 for drying so as to generate droplet of the drying fluid, and for guiding the droplet towards the center of the substrate processing vessel 1, and a second inert gas supplying section 5 for supplying inert gas vertically and downwardly so as to supply the generated droplet of the drying fluid towards the substrates 2, consequently safety is improved without providing special safety device, and sufficient amount of drying fluid is supplied to the dipping boundary face of the substrate and the cleaning liquid.

Abstract: A centrifugal processor includes an elongated inlet and outlet in fluid communication with a rotor housing having an eccentric bowl. A rotor having fan blades and adapted to hold flat media is rotatably disposed within the rotor housing. An intake gate is pivotably mounted to the rotor housing to swing about the rotor into a closed position during a rinse mode and into an open position during a drying mode. The gate has a wedge that is designed to almost contact the rotor when the gate is in the open position for drying. The geometry of the elongated inlet, outlet, and eccentric bowl, in combination with the design of the rotor and that of the intake gate, work together to create a cross flow fan having a flow path across the flat media and one that exposes the flat media to large volumes of incoming air only once.

Abstract: An apparatus for processing a microelectronic workpiece is set forth. The apparatus comprises a workpiece support adapted to hold the microelectronic workpiece and a processing container adapted to receive the microelectronic workpiece held by the workpiece support. A drive mechanism is connected to drive the processing container and the workpiece support relative to one another so that the microelectronic workpiece may be moved to a plurality of workpiece processing positions for processing using processing fluid that is provided by first and second chemical delivery systems. The apparatus also includes first and second chemical collector systems that are used to assist in at least partially removing spent processing fluid. In accordance with one embodiment, the apparatus is particularly adapted to execute an immersion process, such as electroplating, and a spraying process, such as an in-situ rinse.

Abstract: The washing chamber includes a housing, a washing chamber interior for spray application of wash water and rinse water, and a water vapor vent for removal of water vapor from the washing chamber interior. The water holding tank is provided for holding wash water and rinse water from the washing chamber. The water vapor recovery line extends from the water vapor vent to an air and liquid water discharge. The water vapor recovery line comprises a condensing region for condensing water vapor present in the condensing region. A method for operating a dishwashing machine is provided.

Abstract: A system for equalizing pressure in a washing chamber in response to changes in pressure inside washing chamber. Gate elements are operable between open and closed positions to regulate pressure conditions inside the washing chamber.

Abstract: A cleaning machine for cleaning supporting trays includes a cleaning cistern (100), a drying cabinet (200) and a control device (300). A water-supply pipe (112) and a drainpipe (120) are connected to the cleaning cistern. A microwave oven (118) is positioned in the cleaning cistern and a shelf (116) is located above the microwave oven for supporting the supporting trays. A cover (130) is pivotally attached to the cleaning cistern, under which a sensor is installed for sensing a level of water. The drying cabinet includes a shield (210) with a plurality of vents defined therein, and an intake fan (220) is provided in the shield. A plurality of heaters (232) is arranged in the drying cabinet below. One or more shelves (236) are mounted in the drying cabinet. An exhaust device (237) is connected to a back panel of the drying cabinet.

Abstract: Wafer cleaning apparatus include a cleaning tub configured to receive a wafer to be cleaned. A wafer cleaning unit coupled to the cleaning tub is configured to provide wafer cleaning solution to the wafer. A probe is positioned in the cleaning tub proximate the wafer. The probe is configured to provide megasonic vibrational energy to a surface of the wafer and/or the wafer cleaning solution to separate contaminants from the surface of the wafer. A probe cleaning unit is configured to provide a probe cleaning solution to the probe to clean the probe. Methods of using the wafer cleaning apparatus are also provided.

Abstract: A cleaner and method for removing excess residual cleaning fluid from an object, particularly a semiconductor wafer, before or as the wafer is removed from a cleaning chamber of a CMP cleaner, for example. Typically, a purge bar is mounted on each side of the cleaning chamber for blowing nitrogen or clean, dry air (CDA) against a corresponding surface of the wafer to remove the excess cleaning fluid from the wafer. The purge bars may be connected to a controller for a wafer transfer device which removes the wafer from the cleaning chamber, such that the purge bars are actuated as the wafer transfer device begins to remove the wafer from the chamber.