Copper Base Patents (Class 148/432)
  • Patent number: 4792369
    Abstract: The present invention relates to a copper wire for use in sound or image reproducing systems, such as audio, video and television systems, etc., and a method for manufacturing the same. The copper wire consists of high purity copper in which silver and sulfur contents are both not more than 0.5 ppm and preferably has a crystal grain size not less than 0.02 mm and is unidirectionally solidified or single crystallized. Such a copper wire is manufactured by continuously casting electrodeposited copper which has been obtained by refining by re-electrolysis of electrolytic copper, using a specially arranged casting apparatus having a mold projecting to an electrolytic bath.
    Type: Grant
    Filed: July 30, 1987
    Date of Patent: December 20, 1988
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Takashi Ogata, Masanori Kato, Yoshio Kawasumi, Chikara Tominaga, Kanji Tanaka
  • Patent number: 4792365
    Abstract: A process for producing beryllium-copper alloys is disclosed, which comprises the steps of obtaining a cast ingot by melting an alloy essentially consisting of from 0.05 to 2.0% by weight of Be, form 0.1 to 10.0% by weight of at least one kind of Co and Ni, and the balance being substantially Cu, subjecting the thus obtained cast ingot to a solution treatment at a temperature range from 800.degree. to 1,000.degree. C., cold working, annealing at a temperature range from 750.degree. to 950.degree. C. being lower than the solution treating temperature, and then an age hardening treatment. The alloy may further contain from 0.05 to 4.0% by weight of at least one kind of Si, Al, Mg, Zr, Sn, and Cr in a total amount. By this producing process, the beryllium-copper alloys having higher strength and formability can be otained due to uniform and fine dispersion of solid-unsolved precipitate.
    Type: Grant
    Filed: November 13, 1987
    Date of Patent: December 20, 1988
    Assignee: NGK Insulators, Ltd.
    Inventors: Yosuke Matsui, Shuhei Ishikawa, Takaharu Iwadachi
  • Patent number: 4786469
    Abstract: The invention provides a grain refinement method for copper-based metals, which method can be applied to a range of different types of such metals. In accordance with the method, one arranges that a melt of the metal to be grain refined contains each of the following components:(a) titanium and/or zirconium;(b) at least one of: lithium, sodium, potassium, beryllium, magnesium, calcium, strontium and barium;(c) at least one of: scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, technetium, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, silver, gold, zinc, cadmium, mercury and the rare earth elements; and(d) at least one of: aluminium, gallium, indium, silicon, germanium, tin, lead, phosphorus, arsenic, antimony, bismuth, sulphur, selenium and tellurium;and solidifies the melt to produce grain refinement of the copper-based metal. The invention also provides grain refiners for practicing the method.
    Type: Grant
    Filed: August 11, 1986
    Date of Patent: November 22, 1988
    Assignee: London & Scandinavian Metallurgical Co Limited
    Inventors: Gerhard Weber, Winfried Reif
  • Patent number: 4744947
    Abstract: According to a method of dispersion hardening copper, silver or gold, melts on the basis of the matrix metals with stoichiometric additions of boron and boride-forming metals are superheated by 300.degree. to 750.degree. C. and subsequently subjected to extremely rapid solidification at a rate of at least 10.sup.3 to 10.sup.4 .degree.C. per second. The boride-forming metals used are preferably titanium and/or zirconium. An excess of preferably about 5 to 20% of boride-forming metal over the stoichiometric amount yields particularly favorable products.
    Type: Grant
    Filed: January 28, 1987
    Date of Patent: May 17, 1988
    Assignee: Battelle-Institut e.V.
    Inventors: Fehmi Nilmen, Heinrich Winter
  • Patent number: 4726859
    Abstract: An inexpensive, very fine wire of high-purity copper is disclosed as an alternative to the fine gold wire which is currently used in the bonding of semiconductor devices. The very fine wire of high-purity copper is prepared from a copper ingot that contains 0-2 ppm of S, 0-2 ppm of Ag, 0-1 ppm of Se and 0-1 ppm of Te as incidental impurities with the total content of these and any other incidental impurities present being held at a level not exceeding 10 ppm. By subjecting it to an appropriate heat treatment, the wire acquires an elongation of 5-22%, a breaking strength of 14-33 kg/mm.sup.2, and a Vickers hardness of 38-50, the latter value being measured with respect to said high-purity copper in an ingot form.
    Type: Grant
    Filed: March 27, 1986
    Date of Patent: February 23, 1988
    Assignees: Mitsubishi Kinzoku Kabushiki Kaisha, Mitsubishi Denki Kabushiki Kaisha
    Inventors: Naoyuki Hosoda, Naoki Uchiyama, Toshiaki Ono, Ryusuke Kawanaka
  • Patent number: 4717436
    Abstract: The present invention eliminates the problems associated with the use of oxygen-free copper and other high-purity copper materials as bonding wires. In accordance with one aspect of the present invention, at least one rare earth element, or at least one element selected from the group consisting of Mg, Ca, Ti, Zr, Hf, Li, Na, K, Rb and Cs, or the combination of at least one rare earth element and at least one elemented selected from the above-specified group is incorporated in high-purity copper as a refining component in an amount of 0.1-100 ppm on a weight basis, and the high-purity copper is subsequently refined by zone melting. The very fine wire drawn from the so refined high-purity copper has the advantage that it can be employed in high-speed ball bonding of a semiconductor chip with a minimum chance of damaging the bonding pad on the chip by the ball forming at the tip of the wire.In accordance with another aspect of the present invention, 0.
    Type: Grant
    Filed: April 9, 1987
    Date of Patent: January 5, 1988
    Assignee: Mitsubishi Kinzoku Kabushiki Kaisha
    Inventors: Naoyuki Hosoda, Masaki Morikawa, Naoki Uchiyama, Hideaki Yoshida, Toshiaki Ono
  • Patent number: 4704253
    Abstract: A copper alloy for use in the manufacture of a radiator fin contains 10 to 150 ppm of tellurium and 20 to 110 ppm of phosphorus, both by weight, as well as copper and unavoidable impurities.
    Type: Grant
    Filed: January 8, 1986
    Date of Patent: November 3, 1987
    Inventors: Shinsuke Yamasaki, Hajime Izumimori
  • Patent number: 4681673
    Abstract: An improved oxygen sensor is provided which gives oxygen concentration readings immediately and without the uncertain delays of a break-in period. The break-in period is decreased substantially by imparting to a copper counter electrode a uniform distribution of cuprous oxide throughout its structure. More reliable performance of the sensor is achieved.
    Type: Grant
    Filed: June 23, 1986
    Date of Patent: July 21, 1987
    Assignee: General Electric Company
    Inventors: Leonard W. Niedrach, Fritz G. Will
  • Patent number: 4605532
    Abstract: A copper base alloy having an improved combination of conductivity and strength for applications such as lead frames or electrical connectors. The alloys consists essentially of from about 0.3 to 1.6% by weight iron, with up to one-half the iron content being replaced by nickel, manganese, cobalt, and mixtures thereof; from about 0.01 to about 0.20% by weight magnesium; from about 0.10 to about 0.40% by weight phosphorus; up to about 0.5% by weight tin or antimony and mixtures thereof; and the balance copper. The phosphorus to magnesium ratio and phosphorus to the total content of phosphide formers ratio are maintained within critical limits.
    Type: Grant
    Filed: June 3, 1985
    Date of Patent: August 12, 1986
    Assignee: Olin Corporation
    Inventors: David B. Knorr, John F. Breedis
  • Patent number: 4587097
    Abstract: A metal alloy consisting essentially of about 4-16 atom percent manganese, 4-16 atom percent silicon, 0-16 atom percent tin, 0-20 atom percent zinc, 0-10 atom percent silver and about 0-10 atom percent indium, the balance being copper and incidental impurities. The alloy is adapted for brazing steels, cemented carbides to steels, copper and copper alloys to steels, copper to copper and copper alloys, and composite materials to steels and copper.
    Type: Grant
    Filed: June 22, 1984
    Date of Patent: May 6, 1986
    Assignee: Allied Corporation
    Inventors: Anatol Rabinkin, Amitava Datta
  • Patent number: 4582545
    Abstract: A method of producing an electrical conductor is described. The electrical conductor is made of an oxygen-free copper material having an oxygen content of not more than 50 ppm, wherein copper crystals constituting the copper material are giant crystals. These giant copper crystals are formed by heating the copper material in an inert atmosphere maintained at a temperature exceeding 800.degree. C. but below the melting point of copper for at least 15 minutes.
    Type: Grant
    Filed: March 9, 1984
    Date of Patent: April 15, 1986
    Assignee: Hitachi Cable Ltd.
    Inventors: Osao Kamada, Shinichi Nishiyama
  • Patent number: 4517033
    Abstract: A contact material for a vacuum circuit breaker consists essentially of copper as the basic component, and, as the other components, 35% by weight or below of chromium and 50% by weight or below of tantalum, the total quantity of chromium and tantalum in said contact material being 10% by weight and above.
    Type: Grant
    Filed: October 31, 1983
    Date of Patent: May 14, 1985
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Mitsuhiro Okumura, Eizo Naya, Michinosuke Demizu
  • Patent number: 4415374
    Abstract: A fine grained metal composition suitable for forming in a partially solid, partially liquid condition. The composition is prepared by producing a solid metal composition having an essentially directional grain structure and heating the directional grain composition to a temperature above the solidus and below the liquidus to produce a partially solid, partially liquid mixture containing at least 0.05 volume fraction liquid. The composition, prior to heating, has a strain level introduced such that upon heating, the mixture comprises uniform discrete spheroidal particles contained within a lower melting matrix. The heated alloy is then solidified while in a partially solid, partially liquid condition, the solidified composition having a uniform, fine grained microstructure.
    Type: Grant
    Filed: March 30, 1982
    Date of Patent: November 15, 1983
    Assignee: International Telephone and Telegraph Corporation
    Inventors: Kenneth P. Young, Curtis P. Kyonka, James A. Courtois