Abstract: A mask fixture for etching an item includes: a top fixture disposed over the item, including a reservoir centered within the top fixture for containing an etchant; a bottom fixture underneath the item to be etched including a recessed surface area centered within the bottom fixture; and an etch-resistant window for holding the item to be etched, the etch-resistant window disposed entirely within the recessed surface area. In addition, a small via centered within and intersecting both the top and bottom fixtures acts as a path for a high intensity light beam.

Abstract: A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask is provided. The substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask is placed into a processing chamber. The organic ARC layer is opened. The organic ARC layer opening comprises flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO, forming an organic ARC open plasma from the organic ARC open gas mixture, etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened, and stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched.

Abstract: A method for forming semiconductor devices is provided. A wafer with a patterned photoresist mask over the wafer, wherein the patterned photoresist mask has patterned photoresist mask features with scum at bottoms of the photoresist mask features is provided. The scum is removed from the bottoms of the photoresist mask features, comprising: providing a descumming gas consisting essentially of helium and forming the helium into a plasma, which removes the scum.

Abstract: A method for etching features in a dielectric layer through a photoresist (PR) mask is provided. The PR mask is patterned using laser light having a wavelength not more than 193 nm. The PR mask is pre-treated with a noble gas plasma, and then a plurality of cycles of a plasma process is provided. Each cycle includes a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask, and a shaping phase that shapes the deposition layer deposited over the PR mask.

Abstract: The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF6 gas; and a small-amount supply step of supplying a small amount of SF6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.

Abstract: An apparatus for determining an endpoint of a process by measuring a thickness of a layer is provided. The layer is disposed on the surface by a prior process. The apparatus includes means for providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The apparatus also includes means for exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and means for determining the thickness as a function of time. The apparatus further includes means for ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

Abstract: Systems, methods and apparatus are provided for determining a substrate polishing endpoint. The invention includes a light source adapted to transmit light to an edge of a substrate; one or more detectors adapted to detect an arrangement of light reflected from the substrate edge; and a controller adapted to determine a polishing endpoint for the substrate edge based on the arrangement of reflected light. Numerous other aspects are provided.

Abstract: A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.

Abstract: A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

Abstract: The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: A microscopic change in a luminous intensity occurring near an etching endpoint is accurately detected, whereby the endpoint of etching is quickly determined. An etching endpoint determination method for determining an endpoint of etching processing in a plasma etching apparatus that introduces a processing gas into a vacuum chamber, produces plasma by feeding high-frequency energy to a introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the chamber includes: a step of sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and a step of computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion of the electrode plate.

Abstract: A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in accordance with a wafer opening ratio and a solid angle of a local pattern, the deposition amount being represented by a product of a reaction product flux and the solid angle. The control section compares a database obtained by the topography simulator with an actual measured value detected from an etching condition during dry etching to calculate a correction value for etching process, and indicates the correction value to an etching chamber in the dry etching equipment. The dry etching equipment corrects in real time a parameter for the etching process conducted in the etching chamber.

Abstract: A CVD apparatus comprising an optical unit detecting the mass of contaminants adhering to an inner surface of a CVD reactor by irradiating an inner surface of the reactor with light having monochromaticity through an optical window provided on an inner wall of the reactor and receiving its reflected light is provided.

Abstract: Disclosed are a method of and system for fabricating a semiconductor wafer. The method comprises the steps of providing a silicon wafer having a front side an a back side, building an integrated circuit on the front side of the wafer, and thereafter removing substrate from the back side of the silicon wafer. The building step includes the steps of forming a desired structure in the wafer, and forming an end structure in the wafer, said end structure extending to a greater depth, toward the back side of the wafer, than the desired structure. Also, the removing step includes the step of removing said substrate only to the end structure, whereby no part of the desired structure is removed during the removing step.

Abstract: A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.

Abstract: This invention provides a thin film deposition process making it possible to form a thin film having a desired composition with good reproducibility and high efficiency; a thin film deposition device therefore; a FTIR gas analyzer used in the thin film deposition process; and a mixed gas supplying device used in the thin film deposition process. The thin film deposition process comprises the steps of mixing a plurality of organic metal gases in a gas mixing chamber and supplying the mixed gas into a reaction chamber to deposit a thin film on a substrate positioned in the reaction chamber, wherein the mixture ratio between/among the organic metal gases supplied into the gas mixing chamber is measured with a FTIR gas analyzer fitted to either the gas mixing chamber or the reaction chamber and then on the basis of results of the measurement, the flow rates of the organic metal gases are individually adjusted.

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract: In the dry etching method and dry etching apparatus relating to the present invention, high frequency electric power is applied to upper and lower electrodes from high frequency power sources to generate plasma and etch an object on the electrode in a vacuum chamber into which a process gas is introduced via a gas inlet and the interior of which is maintained for a specific pressure by an exhaust unit. An etching rate estimation equation is created using apparatus parameters including an emission intensity ratio obtained by dividing an emission intensity of a plasma emission wavelength by an emission intensity of an inert gas. An estimated etching rate is calculated using the etching rate estimation equation. An estimated etching time to achieve a proper etching quantity is calculated based on the estimated etching rate and used for the control, reducing the production variation of fine devices.

Abstract: An apparatus for depositing materials onto a micro-device workpiece includes a gas source system configured to provide a first precursor, a second precursor, and a purge gas. The apparatus can also include a valve assembly coupled to the gas source system. The valve assembly is configured to control a flow of the first precursor, a flow the second precursor, and a flow of the purge gas. Another component of the apparatus is a reaction chamber including an inlet coupled to the valve assembly, a workpiece holder in the reaction chamber, and an outlet downstream from the workpiece holder. The apparatus also includes a monitoring system and a controller. The monitoring system comprises a radiation source that directs a selected radiation through the reaction chamber and a detector that senses a parameter of the radiation directed through the reaction chamber. The controller is operatively coupled to the monitoring system and the valve assembly.

Abstract: A method of processing a semiconductor which includes providing a process gas supply unit for supplying a process gas to a sample stand to hold a sample in a process chamber and to the process chamber, successively supplying a plurality of samples of a lot to the process chamber to conduct an intra-lot successive process, predicting, before a lot process is started and according to sensor data detected by a state sensor to detect a state in the process chamber, intra-lot variation patterns of results of the intra-lot successive process, and changing, according to a result of the prediction by the intra-lot variation pattern prediction unit, a process condition applied to a sample of the lot and conducting the lot process.

Abstract: The present invention prevents drop in the function of a plasma processing device caused by reduction of a plasma generating chamber by reductive plasma that is generated from the introduced process gas, and extends the life of members which are in contact with reductive plasma, especially the plasma generating chamber member. The plasma processing device of this embodiment is a device for treating the surface of a processing subject S using radicals generated by exciting a process gas, wherein a plasma generating chamber member 6, having a internal plasma generating chamber 6a, is connected to a gas introduction tube 5 attached to the outside of the process chamber 1, and a gas regulator 7 is provided on the end of the plasma generating chamber member 6.

Abstract: A substrate etching apparatus comprises a chamber having a wall with a window, substrate support pedestal, energy source, and monitoring assembly with signal sensor capable of detecting reflected radiation from the substrate from directly above the substrate after the radiation propagates through the window in the wall. An etching method comprises the steps of: providing a substrate in a chamber, etching a channel or trench in the substrate by coupling energy through the wall of the chamber to energize an etch gas in the chamber, detecting radiation reflected from the substrate from directly above the substrate after the radiation propagates through the wall and evaluating the detected radiation to monitor the depth of etching of the channel or trench being etched on the substrate.

Abstract: An etching apparatus of the present invention comprises a reaction chamber, a lower electrode placed on the bottom surface of the reaction chamber, an upper electrode placed at the ceiling of the reaction chamber to face the lower electrode, and a focus ring placed on the lower electrode and having a cavity for holding a to-be-processed substrate. The lower surface of the upper electrode is provided, at its middle part, with a recess having a smaller inside diameter than the diameter of the to-be-processed substrate. Thus, in the generation of plasma, the amount of further incident radicals can be reduced in a middle part of the to-be-processed substrate. Therefore, a hole or the like located in the middle part of the to-be-processed substrate can be formed to have a desired shape without having a tapered shape.

Abstract: A method includes illuminating at least a portion of a first grid including a first plurality of stressed material regions formed at least partially in a semiconducting material. Light reflected from the illuminated portion of the first grid is measured to generate a first reflection profile. A characteristic of the first plurality of stressed material regions is determined based on the first reflection profile. A test structure includes a first plurality of stressed material regions recessed with respect to a surface of a semiconductor layer and defining a first grid. A first plurality of exposed portions of the semiconductor layer is disposed between each of the first plurality of stressed material regions.

Abstract: The present invention provides a recovery processing method to restore the substrate processing apparatus to an operating state after correcting an abnormality having occurred in the substrate processing apparatus in operation and having resulted in a stop in the operation, comprising a substrate retrieval step in which substrate salvage processing is first executed for a wafer W left in a chamber in the substrate processing apparatus in correspondence to the extent to which the wafer has been processed at the time of the operation stop and the substrate having undergone the substrate salvage processing is then retrieved into the cassette storage container and an apparatus internal state restoration step in which the states inside the individual chambers of the substrate processing apparatus are restored.

Abstract: The present invention provides a plasma processing chamber mounted with a function capable of determining the state of a temperature rise in a processing chamber even if a thermometer is not mounted in the processing chamber. In a plasma processing apparatus including: a processing chamber for subjecting a sample to be processed to plasma processing; means for supplying the processing chamber with gas; exhaust means for reducing pressure in the processing chamber; a high-frequency power source for generating plasma; and an electrode on which the sample to be processed is placed, there is provided a plasma emission monitor for determining an end point of temperature raise discharge and means for determining an end point of temperature raise discharge, both of which are used for determining an end point of temperature raise discharge performed before the plasma processing.

Abstract: A method of manufacturing a thin-film magnetic head works a part to be worked to a target length by carrying out an etching process on an object to be worked using an etching apparatus.

Abstract: To provide a plasma processing apparatus using a measuring method of a film thickness of a material to be processed, which method is capable of accurately measuring an actual residual film amount and an etching depth of the layer to be processed.

Abstract: A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

Abstract: A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.

Abstract: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

Abstract: A mask layer and a to-be-processed layer are irradiated with light to measure interference light formed of reflected lights from the mask layer and reflected lights from the to-be-processed layer. Thereafter, an interference component brought by the mask layer is removed from the waveform of the measured interference light, thereby calculating the waveform of the interference light brought by the to-be-processed layer. The thickness of the remaining to-be-processed layer is determined on the basis of the calculated waveform of the interference light and the thickness of the remaining to-be-processed layer is compared with a desired thickness thereof. In this way, an end point of processing on the to-be-processed layer is detected.

Abstract: Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.

Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

Abstract: There is not known a conventional method for predicting the consumed degree of consumable supplies and the thickness of deposited films without opening a processing chamber. A method for predicting the consumed degree of a consumable supply and the thickness of a deposited film according to the present invention is used for a plasma processing system 10 for carrying out a predetermined processing for a wafer W with plasma which is produced from a process gas by applying a high-frequency power, and comprises the steps of: measuring the voltages and currents of a fundamental wave and its integer-times waves of a high-frequency power supply 20, which vary in accordance with the thickness of a focus ring 21 and the thickness of a deposited film, with elapsed time; and using these measured data to carry out a multiple regression analysis to predict the thickness of the focus ring 21 and the thickness of the deposited film.

Abstract: A method for performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit.

Abstract: A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.

Abstract: Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may monitor the proximity of a workpiece holder and an abrasion member by measuring the capacitance between a first sensor associated with the workpiece holder and a second sensor associated with the abrasion member. This exemplary control system may adjust a process parameter of the planarization cycle in response to a change in the measured capacitance. This can be useful in endpointing the planarization cycle, for example. In certain applications, the control system may define a pad profile based on multiple capacitance measurements and use the pad profile to achieve better planarity of the planarized surface.

Abstract: In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

Abstract: Systems and techniques relating to etching vias in integrated circuit devices, in one implementation, include: providing a dielectric material and a conductive material, removing a first portion of the dielectric material to form a hole in the dielectric material, performing a tapering etch that removes a second portion of the dielectric material to form a via that touches down on the conductive material, and laterally expanding a bottom dimension of the via without a significant increase in a depth of the via. The technique can also include: providing a substrate with the dielectric material and the conductive material attached without an associated etch stop layer, removing the first portion at a high etch rate, controlling ion bombardment and plasma chemistry to form a sloped bottom of the via, and performing an intensive ion bombarding plasma etch, laterally expanding the via bottom.

Abstract: An apparatus and method for detection of a feature etch completion within an etching reactor. The method includes determining a correlation matrix by recording first measured data regarding a first etch process over successive time intervals to form a first recorded data matrix, assembling a first endpoint signal matrix using target endpoint data for a specific etch process, performing a partial least squares analysis on the recorded data matrix and the first endpoint signal matrix to refine the recorded data matrix, and computing a correlation matrix based upon the refined recorded data matrix and the first endpoint signal matrix. The method further includes performing a second etch process to form a second recorded data matrix. The correlation matrix and the second recorded data matrix are analyzed to determine whether an endpoint of the second etch process has been achieved.

Abstract: The invention aims at solving the problems of throughput deterioration, reproducibility deterioration and plasma discharge instability when performing continuous discharge during multiple steps of plasma etching. According to the present invention, the gas supply unit is operated while determining the timing for switching conditions of a plurality of plasma etching steps, and the gas flow rate and gas pressure are controlled so that the pressure of processing gas supplied from the gas supply unit to the processing chamber does not fall below a predetermined pressure immediately subsequent to switching steps.

Abstract: An optical window deposition shield including a backing plate having a through hole, and a honeycomb structure having a plurality of adjacent cells configured to allow optical viewing through the honeycomb structure. Each cell of the honeycomb structure has an aspect ratio of length to diameter sufficient to impede a processing plasma from traveling through the full length of the cell. A coupling device configured to couple the honeycomb core structure to the backing plate such that the honeycomb structure is aligned with at least a portion of the through hole in the backing plate. The optical window deposition shield shields the optical viewing window of a plasma processing apparatus from contact with the plasma.

Abstract: A plasma processing system is provided that allows for monitoring a plasma processing system during plasma processing. The plasma processing system includes a processing chamber and a monitoring system for monitoring conditions of the processing chamber. By providing tools within a tool housing that is protected from the plasma environment but still in very close proximity thereto, better process monitoring can be achieved.

Abstract: In a chamber (11), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber (11) is cleaned up using a gas containing NF3. A manometer (28) is prepared for the chamber (11). An end point of cleaning of the chamber (11) is detected by monitoring the pressure inside the chamber (11).

Abstract: There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

Abstract: Methods for cleaning a chamber of semiconductor device manufacturing equipment are disclosed. An illustrated method comprises supplying cleaning gas into a chamber to start a cleaning process; detecting the intensity of a wavelength for the cleaning gas; fixing a valve at a predetermined position to control the pressure in the chamber; detecting the pressure in the chamber during some period of the cleaning time, the cleaning time being from the beginning of the cleaning process to the time when the intensity of the wavelength is settled at a predetermined value; and stopping supplying the cleaning gas into the chamber to complete the cleaning process.