Abstract: An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processing room and a magnetic pole pair having two different magnetic poles disposed opposite each other with the hole interposed therebetween. The magnetic pole pair is configured to have a sufficient magnetic field strength to prevent electrons which form a plasma in the processing room from reaching the transparent member through the hole.

Abstract: A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.

Abstract: The present invention presents an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.

Abstract: A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.

Abstract: A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.

Abstract: A method for producing magneto resistive heads includes the steps of positioning at least two magneto resistive elements in spaced relation to one another and placing the at least two magneto resistive elements in an ion milling environment where material is removed nonselectively from items in the environment. A property of at least two of the plurality of magneto resistive elements is monitored. In response to monitoring, one of the at least two magneto resistive elements is dynamically covered to prevent additional removal of material from the covered magneto resistive element.

Abstract: In a semiconductor processing apparatus including a process chamber, a sample stand for holding a sample in the process chamber, and a process gas supply unit for supplying a process gas to the process chamber, a plurality of samples of a lot are successively supplied to a process chamber to be successively processed in an intra-lot successive process. The apparatus includes a state sensor for detecting a state in the process chamber and an intra-lot variation pattern prediction unit for predicting, according to sensor data detected by the state sensor, intra-lot variation patterns of results of the intra-lot successive process. According to a result of the prediction by the intra-lot variation pattern prediction unit, the apparatus changes a process condition applied to a sample of the lot.

Abstract: A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal.

Abstract: In a plasma processing method and apparatus for monitoring an operating status of a plasma processing apparatus and/or a processing status of an object being processed, emission spectra emitted from a plasma is obtained as optical data when the plasma process is performed on the object. Quantitative data of each emission source is obtained from the obtained optical data by using reference data in a database storing therein emission spectra of a plurality of emission source as the reference data. The operating status of the plasma processing apparatus and/or the processing status of the object being processed is estimated based on changes in the quantitative data of each emission source.

Abstract: An apparatus for atomic layer deposition preventing mixing of a precursor gas and an input gas. From the apparatus a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the input gas in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The input gas is dissociated by the beam producing a high flux point of use generated reactive gas species that reacts with a surface reactant formed on the surface of the workpiece by a direct flow of the precursor gas flown from the dispensing unit. The surface reactant and reactive gas species react to form a desired monolayer of a material on the surface of the workpiece.

Abstract: A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

Abstract: In a plasma processing system, a method of inspecting a contact opening of a contact formed in a first layer of the substrate to determine whether the contact reaches a metal layer that is disposed below the first layer is shown. The method includes flowing a gas mixture into a plasma reactor of the plasma processing system, the gas mixture comprising a flow of a chlorine containing gas. The method also includes striking a plasma from the gas mixture; and exposing the contact to the plasma. The method further includes detecting whether metal chloride is present in the contact opening after the exposing.

Abstract: There is provided a chemical mechanical polishing apparatus, which may include a polishing table rotated by a polishing table motor and having a pad thereon, a carrier head located above the polishing table to be rotatable by the driving of a carrier head motor and having a wafer located under the bottom thereof, a slurry supplier for supplying a slurry to the upper portion of the polishing table, a first polishing end point detector for detecting a polishing end point through the temperature change of the temperature sensor, at least one temperature sensor for detecting the temperature of a polishing region (the wafer, the pad, and the slurry), and a second polishing end point detector for detecting a polishing end point from the changes of load current, voltage, and resistance of the carrier head motor.

Abstract: A method and apparatus for measuring a potential difference for plasma processing with a plasma processing apparatus that processes a sample by introducing a gas into a vacuum chamber and generates plasma. A light-emitting portion is formed on a measurement-use sample of the sample to be processed and a current flows into the light-emitting portion according to a potential difference that has been generated across the light-emitting portion. An intensity of light emitted from the light-emitting portion according to a predetermined light intensity is measured and a potential difference on the measurement-use sample according to a predetermined light intensity is measured.

Abstract: It is an object of the invention to provide a vacuum processing device and a vacuum processing system capable of improving the accuracy for the function of estimating the result of processing of samples based on the monitored values for the processing state of the samples, improving the forecasting accuracy and thus improving the yield of products. The system comprises a function of monitoring processing parameters for samples, a function of estimating the processing characteristics of the samples based on the monitored parameters, a function of conducting communication with a measuring device for measuring the processing state of the samples after processing and a function of updating the measuring conditions by the measuring device in accordance with the processing characteristics of the samples estimated from the information by monitoring.

Abstract: A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

Abstract: A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

Abstract: An etching system for subjecting a single film to be etched to etching involves a plurality of etching steps in which respective different recipes are applied. The etching system employs recipe generating means which fixes the recipe to be applied to the final etching step, affecting an underlying film making contact with the film to be etched, of the etching steps, to a preset recipe, and which generates a recipe to be applied to the residual etching step on the basis of the results of processing. Etching processing is conducted according to the recipes generated by the recipe generating means.

Abstract: At least one control parameter such as power supplied to a plasma, process pressure, gas flow rate, and radio frequency bias power to a wafer is changed for an extremely short time as compared with an entire plasma processing time, to the extent that such a change does not affect the result of plasma processing on the wafer, to monitor a temporal change of a plasma state which occurs at the time of changing. A signal resulting from the monitoring method is used to control or diagnose the plasma processing, thereby making it possible to accomplish miniature etching works, high quality deposition, surface processing.

Abstract: A plasma processing system for processing a workpiece by using plasma generated in a chamber, includes a light transmissive member disposed in the chamber, the workpiece being disposed inside the light transmissive member; and a light receiving unit mounted on the chamber for receiving light inside the light transmissive member, wherein a state of processing the workpiece is detected by using data detected from light inside the light transmissive member before processing the workpiece and data detected from light inside the light transmissive member generated during processing the workpiece. A plasma processing method and system is provided which facilitates an operation of the system and executes a reliable processing.

Abstract: A method and apparatus for monitoring a process by employing principal component analysis are provided. Correlated attributes are measured for the process to be monitored (the production process). Principal component analysis then is performed on the measured correlated attributes so as to generate at least one production principal component; and the at least one production principal component is compared to a principal component associated with a calibration process (a calibration principal component). The calibration principal component is obtained by measuring correlated attributes of a calibration process, and by performing principal component analysis on the measured correlated attributes so as to generate at least one principal component. A principal component having a feature indicative of at least one of a desired process state, process event and chamber state then is identified and is designated as the calibration principal component.

Abstract: A dual-port endpoint detection window for a process chamber for substrates. The dual-port endpoint detection window of the present invention comprises a primary port and a secondary port each of which may be individually removably fitted with a light sensor for the endpoint detection system. A cover is provided for removably covering the secondary port. After the window of the primary port has become covered with material deposition as a result of prolonged use of the process chamber, the secondary port is uncovered for use and the light sensor is attached to the secondary port for continued use of the endpoint detection system through the secondary port.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.

Abstract: A plasma processing apparatus for processing an object arranged within a chamber by utilizing the plasma caused within the chamber, the apparatus including: a sensor having plural lines of a plurality of elements for detecting a plurality of strip-like beams; an application unit for applying the plurality of strip-like beams generated from the light within the chamber in such a way that each of the illumination faces of the strip-like beams makes an angle with respect to each of the lines of the elements; and a control unit for adjusting the operation of the apparatus using outputs from the sensor.

Abstract: A method and apparatus performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit.

Abstract: A process chamber 35 capable of processing a substrate 30 and monitoring a process conducted on the substrate 30, comprises a support 45, a gas inlet, a gas energizer, an exhaust 85, and a wall 38 having a recess 145 that is sized to reduce the deposition of process residues therein. A process monitoring system 35 may be used to monitoring a process that may be conducted on a substrate 30 in the process chamber 25 through the recess 145 in the wall 38.

Abstract: An end point detection window prevents process failures in a plasma etching device. The end point detection window has a body of aluminum or an aluminum alloy through which a hole extends to provide a path along which light generated during the etching process can pass from the process chamber, and a capping section coupled to a light outlet of the body. The capping section is of quartz for allowing the light passing through the hole in the body to be transmitted out of the process chamber.

Abstract: A method for monitoring an etch process of a substrate that includes receiving a first signal having a first wavelength, deriving a second signal based on the first signal and combining the first signal with the second signal to produce a composite signal having a composite wavelength less than the first wavelength. The method further includes identifying one or more inflection points of the composite signal and determining an etch rate of an etch process by evaluating the inflection points and elapsed time between the inflection points.

Abstract: A plasma etching apparatus for a semiconductor wafer generates plasma in a plasma generation space between a susceptor and a showerhead. A shield member is detachably disposed inside the sidewall of a process chamber to prevent reaction products from sticking to the sidewall. A window device is arranged to lead plasma light emitted from plasma out of the process chamber. The window device includes a quartz window plate airtightly attached to the sidewall of the process chamber. The window device also includes an aluminum light guide having a number of capillary through holes for guiding the plasma light to the window plate, and a sapphire cover plate disposed between the window plate and the light guide and covering the openings of the through holes. The light guide and the cover plate are attached to the shield member.

Abstract: In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position.

Abstract: A systems and methodologies are provided for metal overetch control. Metal overetch processes are controlled by utilizing overetch device models to determine overetch times or overetch endpoints. The systems and methodologies reduce the need for manual testing and manual overetch characterization. An overetch system includes a metal etcher, a target device and an overetch controller. The target device is located in or on the metal etcher. The overetch controller is coupled to the metal etcher. The overetch controller controls overetching of the target device by the metal etcher. The overetch controller includes an overetch time controller, a set of etch control models and a control system.

Abstract: The present invention is a monitoring method of monitoring a change of a processing state of an object to be processed when a predetermined process is conducted to the object to be processed by using a processing unit. The method includes: a step of respectively setting constant response variables for two states before and after a processing state changes, the response variables being different from each other; and a step of conducting a multiple regression analysis about the response variables in order to produce a model expression, predictor variables of the multiple regression analysis being a plurality of detected data from a plurality of detectors provided in the processing unit. Then, the method includes: a step of actually obtaining a plurality of detected data from the plurality of detectors when the predetermined process is conducted to the object to be processed; and a step of estimating or monitoring a processing state by applying the obtained plurality of detected data to the model expression.

Abstract: By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semiconductor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.

Abstract: One aspect of the present invention relates to a system for determining and controlling a microloading effect in order to achieve desired feature depth on a wafer. The system includes a semiconductor structure having one or more layers formed over a substrate, a fabrication process assembly for forming features on the semiconductor structure, a microloading characterization system for monitoring the fabrication process, measuring feature depth, and for processing the measurements in order to ascertain the microloading effect, a detection apparatus operatively coupled to the microloading characterization system to facilitate monitoring the fabrication process and measuring feature depth, and a control system for regulating the fabrication process based on the output from the microloading characterization system.

Abstract: A substrate processing apparatus has a chamber having a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and an exhaust to exhaust the gas. A detector is adapted to detect a first intensity of a first wavelength of a radiation emission from an energized gas in the chamber and generate a first signal in relation to the first intensity and to detect a second intensity of a second wavelength of the radiation emission and generate a second signal in relation to the second intensity. A controller receives the first and second signals from the detector, performs a mathematical operation on the first and second signals to determine a value related to a condition of the chamber, and treats the chamber in relation to the value by providing instructions to operate one or more of the substrate transport, substrate support, gas supply, gas energizer and gas exhaust.

Abstract: An in-line system and method for determining T-top gate dimensions is provided. The system comprises a wafer structure undergoing a T-top gate formation process; a scatterometry system coupled to the formation process for directing light at and collecting reflected light from the wafer structure; a signature store; a T-top gate formation analysis system coupled to the scatterometry system and to the signature store for determining the T-top gate dimensions; and a feedback control system coupled to the T-top gate formation analysis system for optimizing T-top gate formation. The method comprises providing a wafer structure having a T-top gate formed thereon; generating a signature associated with the T-top gate; comparing the generated signature with a signature store to determine the dimensions of the T-top gate; if the dimensions of the T-top gate are not within a pre-determined acceptable range, then adjusting T-top gate process parameters using feedback control.

Abstract: A method and apparatus for endpointing a planarization process of a microelectronic substrate. In one embodiment, the apparatus may include a species analyzer that receives a slurry resulting from the planarization process and analyzes the slurry to determine the presence of an endpointing material implanted beneath the surface of the microelectronic substrate. The species analyzer may include a mass spectrometer or a spectrum analyzer. In another embodiment, the apparatus may include a radiation source that directs impinging radiation toward the microelectronic substrate, exciting atoms of the substrate, which in turn produce an emitted radiation. A radiation detector is positioned proximate to the substrate to receive the emitted radiation and determine the endpoint by determining the intensity of the radiation emitted by the endpointing material.

Abstract: The intensity of the light emitted from the light-emitting diode on wafer is measured and then the potential difference between the terminals of the light-emitting element, and the plasma current flowing thereinto are derived from measured light intensity. Since the use of a camera enables non-contact measurement of emitted light intensity, the lead-in terminals for lead wires that are always required in conventional probing methods become unnecessary. In addition, since the target wafer does not require lead wire connection, wafers can be changed in the same way as performed for etching.

Abstract: The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter.

Abstract: A semiconductor process recording apparatus comprises a buffer circuit and a endpoint recording device. The input terminal of the buffer circuit is connected to an external endpoint apparatus for receiving a first signal output from the endpoint apparatus. The output terminal of the buffer circuit is connected to the endpoint recording device for outputting a second signal representative of the first signal in response to the first signal. When receiving the second signal, the endpoint recording device outputs a feedback signal to the buffer circuit on the basis of the second signal. Because the feedback signal is blocked by the buffer circuit, the external endpoint apparatus is protected from the damage caused by the feedback signal, thereby greatly reducing the production cost and rate of semiconductor manufacturing.

Abstract: A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.

Abstract: A dual-port endpoint detection window for a process chamber for substrates. The dual-port endpoint detection window of the present invention comprises a primary port and a secondary port each of which may be individually removably fitted with a light sensor for the endpoint detection system. A cover is provided for removably covering the secondary port. After the window of the primary port has become covered with material deposition as a result of prolonged use of the process chamber, the secondary port is uncovered for use and the light sensor is attached to the secondary port for continued use of the endpoint detection system through the secondary port.

Abstract: An emission spectroscopic processing apparatus includes a spectroscope for spectrally separating input light emitted from a process unit into component spectra, a light receiving unit including a series of light receiving elements for detecting light quantities of the component spectra on a wavelength basis, a first signal hold unit for holding sequentially each of detection signals outputted from a subset of adjacent light receiving elements contained in series of light receiving elements during a first period, an adder unit for adding together the detection signals of adjacent light receiving elements of the light receiving unit inclusive of the held detection signals of the subset of adjacent light receiving elements, a second signal hold unit for holding sequentially sum outputs of the adder unit, and a signal processing unit for determining a state of the process unit on the basis of the output of the second signal hold unit.

Abstract: A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process chamber 35 has a wall which may comprise a window or radiation transmitting portion 130 that allows light to be transmitted therethrough. Residue deposits onto the window 130 during processing of the substrate 30 may be reduced. In one version, the window 130 comprises a transparent plate 135 covered by an overlying mask 140 that has at least one aperture 145 extending through the mask 140 so that light can be transmitted through the aperture 145 and the transparent plate 135.

Abstract: The following operations are performed in order to allow particles suspended in a processing chamber to be detected using a single observation window and an optical system formed as a single unit and in order to provide precise detection of very weak particle-scattered light: when a desired film-forming/processing operation is being performed on a body being processed in a processing chamber, a beam that is P-polarized and that is intensity amplified at a frequency different from an excitation source frequency and integer multiples thereof is passed through an observation window sloped to form a Brewster angle relative to the P-polarized entry beam; back-scattered light scattered by particles in the processing chamber passes through the same observation window and received and imaged by a detection optical system; the frequency component described above and the intensity-modulated beam wavelength component are detected from the received light signal; and these detected components and the image information ima

Abstract: During the polishing of a wafer 2, the wafer 2 is illuminated with measuring light emitted from a light source 21, and the spectroscopic intensity of the reflected light is detected by a linear sensor 31. The signal processing part 11 monitors the polishing state of the wafer 2 on the basis of detection signals from the sensor 31, and detects the polishing endpoint of the wafer 2. The shutter mechanism control part 14 controls the motor 13b of the shutter mechanism 13 in response to the polishing endpoint detection signal from the signal processing part 11, and causes a light blocking member 13a to advance into the light path of the measuring light, so that the measuring light is blocked with respect to the wafer 2. As a result, the effect of the measuring light used for the monitoring of the polishing state on the object of polishing can be reduced.

Abstract: A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

Abstract: Methods and apparatuses for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The measured drag force can be used to generate a plot of work versus time.

Abstract: A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the plasma etching process are arithmetically processed, so that the change of light amount is corrected and an etching endpoint is detected from the time series data after the correction.