Ion Beam Sputter Deposition Patents (Class 204/192.11)
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Patent number: 7204921Abstract: A vacuum apparatus which can easily regenerate plasma is provided. A matching box used in the vacuum apparatus can vary the impedance thereof by varying the magnitudes of the inductance of variable inductance elements. Controlling the magnitude of direct current makes it possible to control the magnitudes of inductance of the variable inductance elements so that it is possible to carry out matching operation at high speed.Type: GrantFiled: September 9, 2003Date of Patent: April 17, 2007Assignee: ULVAC Inc.Inventors: Taro Yajima, Minoru Akaishi, Yoshikuni Horishita
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Patent number: 7160475Abstract: The present disclosure relates to a method for generating a three-dimensional microstructure in an object. In one embodiment, a method for fabricating a microscopic three-dimensional structure is provided. A work piece is provided that includes a target area at which the three-dimensional structure is to be fabricated. The target area has a plurality of virtual dwell points. A shaped beam is provided to project onto the work piece. The intersection of the shaped beam with the work piece defines a beam incidence region that has a desired shape. The beam incidence region is sufficiently large to encompass multiple ones of the virtual dwell points. The shaped beam is moved across the work piece such that different ones of the virtual dwell points come into it and leave it as the beam moves across the work piece thereby providing different doses to different ones of the virtual dwell points as the different dwell points remain in the beam incidence region for different lengths of time during the beam scan.Type: GrantFiled: November 21, 2002Date of Patent: January 9, 2007Assignee: FEI CompanyInventor: Lawrence Scipioni
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Patent number: 7122100Abstract: A method for reducing the loss of particles from the surface of porous getter bodies is taught herein. The method consists in producing on the surface of the porous getter a thin layer of a metal or metal alloy with a deposition technique selected among the deposition of materials from arc generated plasma, ionic beam deposition and cathodic deposition. The deposition technique allows for granular or columnar surface of the covering material but still allowing access to the surface of the getter material, resulting in a reduced getter particle loss.Type: GrantFiled: June 18, 2004Date of Patent: October 17, 2006Assignee: SAES Getters S.p.A.Inventors: Andrea Conte, Marco Moraja
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Patent number: 7062348Abstract: A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes.Type: GrantFiled: July 13, 2000Date of Patent: June 13, 2006Assignee: The Extreme Ultaviolet Lithography LLCInventor: James A. Folta
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Patent number: 7048836Abstract: Thermal-insulating material provided on a metal substrate by means of an EB-PVD process includes a metal having a substantially magnetoplumbitic crystal structure and having a chemical composition according to general formula: Ln3+M2+1+xQ44+A111?2xO19. The thermally-insulated metal substrate may advantageously include an adhesive layer provided between the surface of the metal substrate and the thermal-insulating layer. The process for producing the thermal-insulated metal substrate includes applying the thermal-insulating material onto a surface of the metal substrate employing an EB-PVD process.Type: GrantFiled: May 9, 2002Date of Patent: May 23, 2006Assignee: Deutsches Zentrum fur Luft-und Raumfahrt e.V.Inventors: Bilge Saruhan-Brings, Uwe Schulz, Claus Jürgen Kroder
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Patent number: 7037595Abstract: A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm/cm3. The layer is formed by depositing on a substrate without energy input to the substrate.Type: GrantFiled: November 15, 1999Date of Patent: May 2, 2006Assignee: Commissariat a l'Energie AtomiqueInventors: Bernard Andre, Jean Dijon, Brigitte Rafin
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Patent number: 7007373Abstract: A method for making an enhanced spin valve sensor with engineered overlayer for sensing magnetically recorded information on a data storage medium. The method includes forming a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An overlayer is formed on the free layer and adapted to decrease free layer magnetic thickness without reducing physical thickness.Type: GrantFiled: November 18, 2002Date of Patent: March 7, 2006Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Witold Kula, Alexander M. Zeltser
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Patent number: 6998028Abstract: A method for producing a superconducting conductor is disclosed, including providing a substrate, depositing a buffer film having a biaxial texture to overlie the substrate by reactive sputtering, and depositing a superconducting layer to overlie the buffer film. Deposition of the buffer film is carried out by exposing the substrate along a deposition zone to a material plume generated by bombarding a target in the presence of a magnetic field, the deposition zone having a length of at least 1.0 m. The assist ions may be generated from a gridless ion source. The buffer film may have a biaxial texture having an out-of-plane crystallographic texture represented by a mosaic spread of not greater than 30°.Type: GrantFiled: September 24, 2004Date of Patent: February 14, 2006Assignee: Superpower, Inc.Inventor: Venkat Selvamanickam
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Patent number: 6994775Abstract: The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.Type: GrantFiled: July 31, 2002Date of Patent: February 7, 2006Assignee: The Regents of the University of CaliforniaInventors: Terry G. Holesinger, Quanxi Jia
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Patent number: 6982132Abstract: A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.Type: GrantFiled: August 14, 2000Date of Patent: January 3, 2006Assignee: Trustees of Tufts CollegeInventors: Ronald B. Goldner, Te-Yang Liu, Mark A. Goldner, Alexandra Gerouki, Terry E. Haas
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Patent number: 6923891Abstract: A method for forming a conductive region on a first portion of a substrate, the method being constituted by exposing the first portion to a filtered beam of substantially fully ionised metallic ions under a pulsed, modulated electrical bias. The method uses FCVA (Filtered Cathodic Vacuum Arc) techniques to generate the filtered ion beam and permits the formation of a conformal metal coating, even in high aspect ratio visa and trenches. The method also permits the in-filling of vias and trenches to form conductive interconnects. Particular examples concern the deposition of copper ions. An adapted FCVA apparatus deposits metals on substrates. A control apparatus controls ion beams impacting upon substrates, the control apparatus being suitable for incorporation within existing filtered ion beam sources.Type: GrantFiled: January 10, 2003Date of Patent: August 2, 2005Assignee: Nanofilm Technologies International Pte Ltd.Inventors: Li Kang Cheah, Xu Shi, Lang Hu
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Patent number: 6921463Abstract: An electrode for a lithium secondary cell capable of attaining excellent charge/discharge characteristics with high discharge capacity is obtained by properly controlling a component of a collector diffusing into active material layers formed on both sides of the collector. Embodiments include forming a first active material layer consisting of a plurality of layers on a first surface of a collector, and forming a second active material layer consisting of a plurality of layers on a second surface of the collector. At least one layer constituting the second active material layer is formed before forming all layers constituting the first active material layer, thereby preventing heat for forming at least one of the layers constituting the second active material layer from being applied to all layers constituting the first active material layer.Type: GrantFiled: June 19, 2002Date of Patent: July 26, 2005Assignee: Sanyo Electric Co., Ltd.Inventors: Katsunobu Sayama, Hisaki Tarui
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Patent number: 6919288Abstract: A hard film for cutting tools which is composed of (Ti1?a?b?c?d, Ala, Crb, Sic, Bd) (C1?eNe) 0.5?a?0.8, 0.06?b, 0?c?0.1, 0?d?0.1, 0?c+d?0.1, a+b+c+d<1, 0.5?e?1 (where a, b, c, and d denote respectively the atomic ratios Al, Cr, Si, and B, and e denotes the atomic ratio of N.Type: GrantFiled: June 30, 2004Date of Patent: July 19, 2005Assignee: Kobe Steel, Ltd.Inventors: Kenji Yamamoto, Toshiki Satou, Yasuomi Morikawa, Koji Hanaguri, Kazuki Takahara
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Patent number: 6905578Abstract: An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber.Type: GrantFiled: April 27, 1998Date of Patent: June 14, 2005Assignee: CVC Products, Inc.Inventors: Mehrdad M. Moslehi, Cecil J. Davis, Christopher J. Mann, Dwain R. Jakubik, Ajit P. Paranjpe
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Patent number: 6878240Abstract: A sputtering system is provided with a substrate and a sputtering material layer that are located in a sputtering chamber. The sputtering material layer has a sputtering surface where atoms of the material are sputtered and the substrate has a forming surface with a site where atoms of the sputtered material are to be formed. The sputtering material layer has a sputtering center which is located at a center of the atoms to be sputtered and the aforementioned site has a periphery with a forming center at a center of the periphery. The sputtering center is offset from the forming center so that shadowing at outer extremities of photoresist masks near the periphery of the substrate is minimized.Type: GrantFiled: June 28, 2002Date of Patent: April 12, 2005Assignee: International Business Machines CorporationInventors: Raymond Bus-Kwofie, James Mac Freitag, Lichiao Metin, Mustafa Pinarbasi, Patrick Rush Webb, Serhat Metin
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Patent number: 6869508Abstract: A PVD process and apparatus (120) for depositing a coating (132) from multiple sources (110, 111) of different materials. The process and apparatus (120) are particulaity intended to deposit a beta-nickel aluminide coating (132) containing one or more elements whose vapor pressures are lower than NiAl. The PVD process and apparatus (120) entail feeding at least two materials (110, 111) into a coating chamber (122) and evaporating the materials (110, 111) at different rates from separate molten pools (114, 115) thereof. Articles (130) to be coated are suspended within the coating chamber (122), and transported with a support apparatus (118) relative to the two molten pools (114, 115) so as to deposit a coating (132) with a controlled composition that is a mixture of the first and second materials (110, 111).Type: GrantFiled: May 15, 2002Date of Patent: March 22, 2005Assignee: General Electric CompanyInventors: Ramgopal Darolia, Reed Roeder Corderman, Joseph David Rigney, Richard Arthur Nardi, Jr., Michael James Weimer
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Patent number: 6859998Abstract: An article is formed as a substrate having a projection extending outwardly therefrom. The article may be a magnetic recording head and the projection a write pole. The projection has a width in a thinnest dimension measured parallel to a substrate surface of no more than about 0.3 micrometers and a height measured perpendicular to the substrate of not less than about 5 times the width. The article is fabricated by forming an overlying structure on the substrate with an edge thereon, depositing a replication layer lying on the edge, depositing a filler onto the edge and the substrate, so that the filler, the replication layer, and the overlying structure in combination comprise a continuous layer on the substrate, selectively removing at least a portion of the replication layer from a free surface of the continuous layer inwardly toward the substrate, to form a defined cavity, and depositing a projection material into the defined cavity to form the projection.Type: GrantFiled: April 12, 2002Date of Patent: March 1, 2005Assignee: International Business Machines CorporationInventors: James Kruger, Benjamin L. Wang, Patrick R. Webb, Howard G. Zolla
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Patent number: 6858115Abstract: Sputtering particles are deposited immediately after activating a surface of a substrate composed of a carbon-containing material. Accordingly, a process for reforming a surface of a substrate, a substrate with a reformed surface, and an apparatus therefor are provided in which the depositability and adhesiveness of the sputtering particles are improved. A vacuum ultraviolet light is generated by a laser beam. A surface of a substrate composed of a carbon-containing material is exposed to the generated vacuum ultraviolet light. As a result, the surface of the substrate is activated. Simultaneously therewith, a sputtering particles-generating device generates sputtering particles, such as neutral atoms, ions and clusters. The resultant sputtering particles are deposited on the activated surface of the substrate. Since the sputtering particles are deposited immediately after the surface of the substrate is activated, they are adhered firmly on the surface of the substrate.Type: GrantFiled: March 14, 2003Date of Patent: February 22, 2005Assignee: Kabushiki Kaisha Toyota Chuo KenkyushoInventors: Hirozumi Azuma, Akihiro Takeuchi, Takaaki Matsuoka, Kazuyuki Tachi, Nobuo Kamiya
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Patent number: 6843891Abstract: In one embodiment of this invention, the apparatus for sputter deposition within an evacuated volume comprises a compact gridless ion source into which an ionizable gas is introduced and from which ions leave with directed energies at or near the sputtering threshold and a sputter target near that source, biased negative relative to the surrounding vacuum enclosure, and located within the beam of ions leaving that source. Particles sputtered from the target are deposited on a deposition substrate spaced from both the ion source and the sputter target. An energetic beam of electrons can be generated by the incident ions striking the negatively biased sputter target and the deposition substrate is located either within or outside of this beam, depending on whether the net effect of bombardment by energetic electrons is beneficial or detrimental to that particular deposition process.Type: GrantFiled: January 19, 2001Date of Patent: January 18, 2005Assignees: Kaufman & Robinson, Inc., Veeco Instruments Inc.Inventors: James R. Kahn, Harold R. Kaufman, Viacheslav V. Zhurin, David A. Baldwin, Todd L. Hylton
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Patent number: 6835289Abstract: The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.Type: GrantFiled: February 28, 2003Date of Patent: December 28, 2004Assignee: Nissin Electric Co., Ltd.Inventor: Takatoshi Yamashita
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Publication number: 20040258926Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.Type: ApplicationFiled: July 15, 2004Publication date: December 23, 2004Applicant: Guardian Industries Corp.Inventor: Vijayen S. Veerasamy
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Publication number: 20040245090Abstract: The invention relates to a process for manufacturing multilayer systems for mirrors in the extreme ultraviolet and x-ray wavelength range, whereby at least one layer, in particular made of Mo, Si, Ru, C., B, Rb, Sr, Y, Cr, Sc or components thereof, is at least partly deposited with ion-beam assistance. In order to improve the surface properties of multilayer systems and to achieve the highest possible reflectivity the ion energy of the ion-beam is selected as an energy equivalent to or below the layer's sputtering threshold.Type: ApplicationFiled: April 22, 2004Publication date: December 9, 2004Inventors: Andrey E. Yakshin, Frederik Bijkerk, T.P.C. Klaver, Eric Louis
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Patent number: 6824654Abstract: A cube used to perform optical functions in a system, such as beam splitting or polarizing, or both, is manufactured by optically contacting a coated prism with an uncoated prism. The coated prism includes a dielectric stack having alternating layers of high and low index of refraction materials. To ensure secure optical contacting between the coated prism and uncoated prism, low interface reflection, and good throughput, a contacting layer is deposited on the dielectric stack. The contacting layer can be fused silica or SiO2, which has natural compatibility with the CaF2 materials that make up the uncoated prism and the coating layers.Type: GrantFiled: October 1, 2002Date of Patent: November 30, 2004Assignee: ASML Holding N.V.Inventors: Samad M. Edlou, David H. Peterson
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Patent number: 6824601Abstract: A hard film for cutting tools which is composed of (Ti1−a−b−c−d, Ala, Crb, Sic, Bd)(C1−aNe) 0.5≦a≦0.8, 0.06≦b, 0≦c≦0.1, 0≦d≦0.1, 0≦c+d≦0.1, a+b+c+d<1, 0.5≦e≦1 (where a, b, c, and d denote respectively the atomic ratios Al, Cr, Si, and B, and e denotes the atomic ratio of N.Type: GrantFiled: December 26, 2001Date of Patent: November 30, 2004Assignee: Kobe Steel, Ltd.Inventors: Kenji Yamamoto, Toshiki Satou, Yasuomi Morikawa, Koji Hanaguri, Kazuki Takahara
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Publication number: 20040231971Abstract: The invention relates to a photo mask blank, a photo mask, a method and an apparatus for manufacturing a photo mask blank in general, and for manufacturing a photo mask blank by particle beam sputtering in particular. It is an object of the invention to provide a method of manufacturing a photo mask blank of high quality and high stability that is suitable for the production of a photo mask having small structures. The invention proposes a method for manufacturing a photo mask blank, wherein a substrate and a target are provided in a vacuum chamber. The target is sputtered by irradiating with a first particle or ion beam and at least a first layer of a first material is deposited on the substrate by the sputtering of said target.Type: ApplicationFiled: February 11, 2004Publication date: November 25, 2004Inventors: Hans Becker, Mario Schiffler, Frank Lenzen, Ute Buttgereit, Gunter Hess, Frank Sobel, Lutz Aschke, Markus Renno, Oliver Goetzenberger, Frank Schmidt
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Patent number: 6821624Abstract: For machine parts, cutting tools and molds used under extremely high contact pressures, an amorphous carbon film is provided which has a sufficient adhesion to a substrate. The amorphous carbon covered member has an interlayer comprising at least one element selected from the group consisting of elements in the IVa, Va, VIa and IIIb groups and the IVb group except carbon in the periodic table, or a carbide of at least one element selected from the group, and an amorphous carbon film formed on the interlayer. The interlayer has a thickness of 0.5 nm or over and less than 10 nm.Type: GrantFiled: February 23, 2001Date of Patent: November 23, 2004Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yoshiharu Utsumi, Kazuhiko Oda
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Patent number: 6809066Abstract: Ion texturing methods and articles are disclosed.Type: GrantFiled: July 30, 2001Date of Patent: October 26, 2004Assignee: The Regents of the University of CaliforniaInventors: Ronald P. Reade, Paul H. Berdahl, Richard E. Russo, Leslie G. Fritzemeier
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Publication number: 20040209125Abstract: A hard coating film of the present invention is formed on a substrate, and is a multilayer including at least the following layers (1) to (3). (1) A first layer on the substrate side comprising one or more metals selected from the group consisting of elements in Groups 4A, 5A, and 6A of the periodic table; (2) a B- and C-containing surface layer; and (3) a graded composition layer which is formed in a sandwiched manner between the first layer and the surface layer, and in which the content of B and C changes continuously or stepwise from the first layer side toward the surface layer side. Another hard coating film of the present invention has a cubic boron nitride film as its outermost surface layer; the cubic boron nitride film is stacked in a state of having been nucleated from a B- and N-containing layer; and the B- and N-containing layer has a ratio of N to B of 0.Type: ApplicationFiled: December 24, 2003Publication date: October 21, 2004Applicant: Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)Inventors: Kenji Yamamoto, Toshiki Sato
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Patent number: 6793778Abstract: A method for fabricating a transducer with landing pads without edge fences is described. Preferably an adhesion layer and then the pad layer are deposited in voids in a photoresist. The thickness of the masking layer on the surface of the pad layer should be sufficient to protect pad layer during the subsequent ashing step, but the thickness of the masking material at the sidewalls on the pad layer fences should be thin enough so that the fences are not protected during ashing. After stripping the photoresist material, the structure is ashed preferably by an oxygen-containing plasma. The ashing process, with assistance from mechanical abrasion, removes the fence structures on the pad layer, since the thinner masking layer at the sidewalls provides less protection to the fence structures than is provided to the bulk of the pad layer where the masking layer is thicker.Type: GrantFiled: July 15, 2002Date of Patent: September 21, 2004Assignee: Hitachi Global Storage Technologies Netherlands N.V.Inventors: Detlef Gador, Cherngye Hwang, Eun Kyoung Row, Ning Shi
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Patent number: 6783874Abstract: First electrode layers are formed on second antiferromagnetic layers, and in a step separate from the above, second electrode layers are formed above internal end surfaces of the second antiferromagnetic layers and the first electrode layers and parts of the upper surface of the multilayer film with an additional film provided therebetween. Since the first and the second electrode layers are formed separately, it is not necessary to perform mask alignment twice, and hence an overlap structure can be precisely formed in which the thickness of the second electrode layer at the left side is equivalent to that at the right side.Type: GrantFiled: April 2, 2003Date of Patent: August 31, 2004Assignee: Alps Electric Co., Ltd.Inventors: Naoya Hasegawa, Eiji Umetsu, Naohiro Ishibashi, Masahiro Oshima
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Patent number: 6783637Abstract: An ion beam deposition system for sputtering material layers comprising a vacuum chamber, a substrate positioned in the vacuum chamber, a first target holder capable of holding at least one target of a first material, said first target holder being positioned in the vacuum chamber, a second target holder capable of holding at least one target of a second material, said second target holder being positioned in the vacuum chamber, a first ion beam source for directing ions at the at least one target of the first material for depositing said first material onto the substrate, and a second ion beam source for directing ions at the at least one target of the second material for depositing said second material onto the substrate. Said deposition system includes a control system that allows materials to be deposited from the first and second target holder with negligible delay between the depositions.Type: GrantFiled: October 31, 2002Date of Patent: August 31, 2004Assignee: Freescale Semiconductor, Inc.Inventors: Jon M. Slaughter, Gerald Steiner
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Patent number: 6783636Abstract: A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0×10−2 Pa or lower while keeping the substrate temperature at 300° C. or lower.Type: GrantFiled: October 6, 2001Date of Patent: August 31, 2004Assignee: Fujikura Ltd.Inventors: Yasuhiro Iijima, Mariko Kimura, Takashi Saito
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Patent number: 6783635Abstract: A method of making a nickel iron (NiFe) layer and a cobalt or cobalt based layer of a free layer structure forms the cobalt or cobalt based layer by oblique ion beam sputter deposition with the cobalt or cobalt based layer located between the nickel iron (NiFe) layer and a copper (Cu) spacer layer of a spin valve sensor for reducing hard axis coercivity HCH which increases sensitivity and magnetic stability of a magnetic read head. An alpha iron oxide (&agr;FeO) layer on a nickel oxide (NiO) layer of a pinning layer may also be obliquely ion beam sputtered for improving magnetic stability of the read head.Type: GrantFiled: December 9, 1999Date of Patent: August 31, 2004Assignee: International Business Machines CorporationInventor: Mustafa Pinarbasi
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Publication number: 20040159538Abstract: The invention relates to a photo mask blank, a photo mask, a method and an apparatus for manufacturing of a photo mask blank in general and for manufacturing of a photo mask blank by particle beam sputtering in particular.Type: ApplicationFiled: February 13, 2003Publication date: August 19, 2004Inventors: Hans Becker, Mario Schiffler, Frank Lenzen, Ute Buttgereit, Gunter Hess
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Patent number: 6764579Abstract: A substrate is coated with a solar management coating system including at least one infrared (IR) reflective layer. A diamond-like carbon (DLC) inclusive protective coating system (e.g., including at least one highly tetrahedral amorphous carbon (ta-C) inclusive layer having sp3 carbon—carbon bonds) is provided on the substrate over at least the IR reflective layer in order to make the coating system scratch resistant, abrasion resistant, and generally mechanically durable. The DLC inclusive protective coating system may be hydrophobic, hydrophillic, or neutral in different embodiments of the invention. Optionally, at least one fluoro-alkyl silane (FAS) compound inclusive layer may be provided on the substrate over at least one of the DLC inclusive layer(s) in hydrophobic embodiments in order to increase contact angle &thgr; of the coated article.Type: GrantFiled: September 13, 2002Date of Patent: July 20, 2004Assignee: Guardian Industries Corp.Inventors: Vijayen S. Veerasamy, Rudolph Hugo Petrmichl, Scott V. Thomsen
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Patent number: 6761803Abstract: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.Type: GrantFiled: December 17, 2001Date of Patent: July 13, 2004Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Igor Bello, Chun-Sing Lee, Quan Li, Naigui Shang
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Patent number: 6755944Abstract: An ion beam deposition target source consisting of a removable, centrally located inner insert surrounded by an outer region. The insert can be removed and replaced when eroded, while the outer region of the target source not eroded by the ion beam remains in place attached to a backing plate. The inner insert and the outer region are joined to each other by an interface comprising an interlocking lip or grove structure located on opposing mating surfaces on the inner insert and outer region, thereby forming the deposition target source when these components are united. The deposition target source can be attached by a bonding layer to a backing plate which is installed into an ion beam deposition machine.Type: GrantFiled: November 2, 2001Date of Patent: June 29, 2004Assignee: Williams Advanced Materials, Inc.Inventors: Henry L. Grohman, Robert Acker, Matthew T. Wilson
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Patent number: 6753538Abstract: A method and apparatus for electron beam processing using an electron beam activated gas to etch or deposit material. The invention is particularly suitable for repairing defects in lithography masks. By using an electron beam in place of an ion beam, the many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch the substrate. In one embodiment, xenon difluoride gas is activated by the electron beam to etch a tungsten, tantalum nitride, or molybdenum silicide film on a transmission or reflection mask. To prevent spontaneous etching by the etchant gas in processed sites at which the passivation layer was removed, processed sites can be re-passivated before processing additional sites.Type: GrantFiled: July 27, 2002Date of Patent: June 22, 2004Assignee: FEI CompanyInventors: Christian R. Musil, J. David Casey, Jr., Thomas J. Gannon, Clive Chandler, Xiadong Da
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Publication number: 20040115537Abstract: An ion-beam deposition process for fabricating attenuating phase shift photomask blanks, capable of producing a phase shift of 180°, and which can provide tunable optical transmission at selected lithographic wavelengths<400 nm, comprising at least one layer of material of general formulae MzSiOxNy or MzAlOxNy, is described.Type: ApplicationFiled: September 29, 2003Publication date: June 17, 2004Inventor: Peter Francis Carcia
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Patent number: 6743369Abstract: A method of manufacturing an electrode for a secondary battery by depositing a thin film composed of active material on a current collector in which a surface-treated layer such as an antirust-treated layer is formed, including the steps of: removing at least part of the surface-treated layer by etching the surface of the current collector with an ion beam or plasma in order to improve the diffusion of the current collector material into the active material thin film; and depositing the thin film on the surface of the current collector subjected to the etching step.Type: GrantFiled: December 17, 2001Date of Patent: June 1, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Daizo Jito, Hisaki Tarui
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Publication number: 20040095692Abstract: A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An engineered overlayer is formed on the free layer to decrease free layer magnetic thickness without reducing physical thickness.Type: ApplicationFiled: November 18, 2002Publication date: May 20, 2004Applicant: International Business Machines CorporationInventors: Witold Kula, Alexandre M. Zeltser
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Patent number: 6736942Abstract: Reactive foils and their uses are provided as localized heat sources useful, for example, in ignition, joining and propulsion. An improved reactive foil is preferably a freestanding multilayered foil structure made up of alternating layers selected from materials that will react with one another in an exothermic and self-propagating reaction. Upon reacting, this foil supplies highly localized heat energy that may be applied, for example, to joining layers, or directly to bulk materials that are to be joined. This foil heat-source allows rapid bonding to occur at room temperature in virtually any environment (e.g., air, vacuum, water, etc.). If a joining material is used, the foil reaction will supply enough heat to melt the joining materials, which upon cooling will form a strong bond, joining two or more bulk materials.Type: GrantFiled: May 1, 2001Date of Patent: May 18, 2004Assignee: Johns Hopkins UniversityInventors: Timothy P. Weihs, Todd Hufnagel, Omar Knio, Michael Reiss, David van Heerden, Howard Feldmesser
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Publication number: 20040089533Abstract: A method to attach hydrophilic and/or ionogenic coatings to metallic surfaces robustly. Important applications for the invention extend to sensor types, various biomedical devices, and additional technologies requiring metal coatings with specified properties, such as sensors that employ the Quartz Crystal Microbalance (QCM) principle. This is a method to produce an adherent hydrogel against a metal surface by gelling a liquid mixture of components. The implementation of the invention for QCM ion sensors employs poly(allylamine) (PAH) hydrogels. The reaction of PAH with N-Acetylhomocysteine thiolactone (AHTL) (Fluda) in water under basic conditions produces thiol groups. This reaction removes ion exchange functionality and permits robust attachment of the hydrogel to the QCM's gold electrode.Type: ApplicationFiled: August 6, 2003Publication date: May 13, 2004Inventors: David Alan Hoagland, Douglas Warren Howie
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Publication number: 20040083969Abstract: [Problem] To provide a film forming apparatus being capable of forming films sequentially with two types of film forming mechanisms in the same chamber.Type: ApplicationFiled: March 3, 2003Publication date: May 6, 2004Applicants: Seiko Epson Corporation, YOUTEC Co., Ltd.Inventors: Takeshi Kijima, Eiji Natori, Mitsuhiro Suzuki
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Publication number: 20040084299Abstract: An ion beam deposition system for sputtering material layers comprising a vacuum chamber, a substrate positioned in the vacuum chamber, a first target holder capable of holding at least one target of a first material, said first target holder being positioned in the vacuum chamber, a second target holder capable of holding at least one target of a second material, said second target holder being positioned in the vacuum chamber, a first ion beam source for directing ions at the at least one target of the first material for depositing said first material onto the substrate, and a second ion beam source for directing ions at the at least one target of the second material for depositing said second material onto the substrate. Said deposition system includes a control system that allows materials to be deposited from the first and second target holder with negligible delay between the depositions.Type: ApplicationFiled: October 31, 2002Publication date: May 6, 2004Inventors: Jon M. Slaughter, Gerald Steiner
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Patent number: 6726812Abstract: An ion beam sputtering apparatus comprising: a first means for generating an ion beam and directing said ion beam in a prescribed direction, a second means for supporting a target at a position where said target is capable of exposing said ion beam irradiated in said prescribed direction and of being sputtered by said ion beam, a third means for supporting an electrically conductive substrate having a semiconductor layer on which a component sputtered from said target is to be deposited, and a fourth means for making said electrically conductive substrate have a non-earth potential. A method for forming a transparent and electrically conductive film on an electrically conductive substrate having a semiconductor layer, which is based on said ion beam sputtering apparatus. A process for producing a semiconductor device by forming a transparent and electrically conductive film on a semiconductor layer for said semiconductor device, which is based on said ion beam sputtering apparatus.Type: GrantFiled: March 4, 1998Date of Patent: April 27, 2004Assignee: Canon Kabushiki KaishaInventor: Noboru Toyama
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Patent number: 6716322Abstract: A deposition system includes a substrate holder supporting a substrate defining at least one topographical feature. In addition, the system includes a deposition plume that is directed toward the substrate. A first profiler mask is positioned between the deposition plume and the substrate, and is shaped so as to reduce inboard/outboard asymmetry in a deposition profile associated with the feature.Type: GrantFiled: April 19, 2002Date of Patent: April 6, 2004Assignee: Veeco Instruments Inc.Inventors: Hari Hedge, Alan V. Hayes, Boris Druz, Viktor Kanarov, Adrian J. Devasahayam, Emmanuel Lakios
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Publication number: 20040061116Abstract: A cube used to perform optical functions in a system, such as beam splitting or polarizing, or both, is manufactured by optically contacting a coated prism with an uncoated prism. The coated prism includes a dielectric stack having alternating layers of high and low index of refraction materials. To ensure secure optical contacting between the coated prism and uncoated prism, low interface reflection, and good throughput, a contacting layer is deposited on the dielectric stack. The contacting layer can be fused silica or SiO2, which has natural compatibility with the CaF2 materials that make up the uncoated prism and the coating layers.Type: ApplicationFiled: October 1, 2002Publication date: April 1, 2004Applicant: ASML US, Inc.Inventors: Samad M. Edlou, David H. Peterson
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Publication number: 20040055871Abstract: A method and means are provided for actively protecting a substrate from particulate contamination during thin film deposition. An intense beam of ions or ionized clusters is directed through the space immediately in front of the surface being coated, and the kinetic energy of the ions is used to deflect any approaching particle defects to the side, preventing them from reaching the surface being coated.Type: ApplicationFiled: September 25, 2002Publication date: March 25, 2004Applicant: The Regents of the University of CaliforniaInventors: Christopher C. Walton, James A. Folta
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Publication number: 20040058088Abstract: Disclosed is a processing method for forming a thick film having an improved adhesion to a surface-modified substrate and an apparatus thereof enabling to form a thick film having the improved adhesion to a polymeric surface by modifying the polymeric surface to have a hydrophilic property. The method includes the steps of preparing a substrate of a polymer material, surface-modifying the substrate, forming a seed layer on the substrate, and forming the thick film on the seed layer. The apparatus includes an unloading area supplying a substrate of a polymer material, a surface treating area modifying a surface of the substrate, a seed layer formation area forming a seed layer on the surface-modified substrate, a thick film formation area forming a thick film on the seed layer, and a loading area loading the substrate.Type: ApplicationFiled: September 2, 2003Publication date: March 25, 2004Inventors: Young-Whoan Beag, Sung Han, Jun-Sik Cho, Cheol-Su Lee, Sung-Soo Koh, Jin-Woo Seok