Abstract: A system for performing sputter disposition on a substrate. A divergent ion current source generates a divergent ion beam. The ion current source has a central axis about which ions are directed toward a surface of a negatively biased target. A rotating substrate is positioned proximate to the target. The central axis of the ion current source is normal to the surface of the target and parallel to a deposition surface of the rotating substrate.

Abstract: The present invention provides fuel cell electrode catalysts comprising alternating platinum-containing layers and layers containing suboxides of a second metal, where the catalyst demonstrates an early onset of CO oxidation. Preferred second metals are selected from the group consisting of Group IIIb metals, Group IVb metals, Group Vb metals, Group VIb metals and Group VIIb metals, most preferably Ti, Ta, W and Mo. The present invention additionally provides methods of making such catalysts, preferably by alternate deposition of platinum and second metals in the presence of substoichiometric amounts of gaseous oxygen.

Abstract: A method of producing a multilayer structure that has reduced interfacial roughness and interlayer mixing by using a physical-vapor deposition apparatus. In general the method includes forming a bottom layer having a first material wherein a first plurality of monolayers of the first material is deposited on an underlayer using a low incident adatom energy. Next, a second plurality of monolayers of the first material is deposited on top of the first plurality of monolayers of the first material using a high incident adatom energy. Thereafter, the method further includes forming a second layer having a second material wherein a first plurality of monolayers of the second material is deposited on the second plurality of monolayers of the first material using a low incident adatom energy. Next, a second plurality of monolayers of the second material is deposited on the first plurality of monolayers of the second material using a high incident adatom energy.

Abstract: A target of fullerene is placed with a substrate in a vacuum chamber. A charged beam, i.e., an electron beam or an ion beam, is directed at the target with a power adequate to emit fullerene molecules from the target and not high enough to form significant amounts of fullerene having a higher molecular structure than the target fullerenes. Fullerene is deposited on the substrate. Regardless of the approach used to deposit the fullerenes, the substrate can be heated during deposition to a temperature above the fullerene-to-fullerene disorption temperature to form a coating consisting of an approximate monolayer of fullerene.

Abstract: A method for manufacturing an optical filter capable of manufacturing an optical filter in such a manner that the transmission wavelength varies linearly with respect to the angle &thgr; in the rotation direction of the substrate and that almost the entire range of the angle &thgr; is utilizable as the optical filter. A mask capable of being rotated relatively with respect to the substrate coaxially on a plane parallel to the substrate, which is either having an aperture extending along a radius direction with an aperture angle &phgr; or itself extending along a radius direction to cover an angle &phgr;, is provided over the substrate. Then, the mask is relatively rotated with respect to the substrate at least once at a non-constant angular speed during a formation of a single layer or multiple layers on the substrate, while depositing a dielectric material in a single layer or multiple layers on the substrate from the mask side within a deposition chamber.

Abstract: A pinning layer structure is provided for a spin valve sensor of a read head which has a reactively deposited nickel oxide first film which underlies a reactively sputter deposited second film of iron oxide (FeXOY). In the preferred embodiment the pinning layer is composed of cobalt (Co) or cobalt iron (CoFe) which is exchange coupled to the iron oxide (FeXOY) second film of the pinning layer. This structure results in an improved magnetoresistive coefficient (dr/R) which is substantially maintained after annealing so that the magnetic head has good thermal stability when subjected to high temperatures in the presence of a field that is antiparallel to the pinned orientation of the magnetic moment of the pinned layer.

Abstract: A protective, biocompatible coating or encapsulation material protects and insulates a component or device intended to be implanted in living tissue. The coating or encapsulation material comprises a thin layer or layers of alumina, zerconia, or other ceramic, less than 25 microns thick, e.g., 5-10 microns thick. The alumina layer(s) may be applied at relatively low temperature. Once applied, the layer provides excellent hermeticity, and prevents electrical leakage. Even though very thin, the alumina layer retains excellent insulating characteristics. In one embodiment, an alumina layer less than about 6 microns thick provides an insulative coating that exhibits less than 10 pA of leakage current over an area 75 mils by 25 mils area while soaking in a saline solution at temperatures up to 80° C. over a three month period.

Abstract: There is provided controlled fabrication of a solid state structural feature on a solid state structure by exposing the structure to a fabrication process environment the conditions of which are selected to produce a prespecified feature in the structure. A physical detection species is directed toward a designated structure location during process environment exposure of the structure, and the detection species is detected in a trajectory from traversal of the designated structure location, to indicate changing physical dimensions of the prespecified feature. The fabrication process environment is then controlled in response to the physical species detection to fabricate the structural feature.

Abstract: A method is provided for a repetitive deposition and etch of a substrate using a carbon containing ion beam in a gridded ion source. The method includes the actual ion beam processing step combined with the thermal and chemical conditioning of the ion source and a special cleaning step(s). The special cleaning step(s) effect robust removal of the precipitates accumulated in the operating source due to the decomposition of carbon containing gases such as hydrocarbons and halocarbons Precipitate removal is achieved by employing ions and radicals formed in an inert gas plasma or a mixture of inert gas and oxygen to reactively etch or bombard the precipitates.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: A dental or orthopedic implantable prosthetic device (1) which has a bioactive surface of an alloyed layer of material having calcium phosphate compounds. The device is formed by placing a suitable substrate of biocompatible material in a vacuum chamber (10), the substrate is cleaned by ion beam sputtering (18a) and then ion beam sputtering (14a) evolves and deposits (16a) bioactive material onto the surface of the device. The bioactive layer is mixed into the surface forming an alloyed zone by augmenting ion beam (18a) and is grown out to a selected thickness while being continuously bombarded by the augmenting ion beam.

Abstract: A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the device thickness. In particular, the device thickness has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.

Abstract: A system for performing sputter disposition on a substrate. A divergent ion current source generates a divergent ion beam. The ion current source has a central axis about which ions are directed toward a surface of a negatively biased target. A rotating substrate is positioned proximate to the target. The central axis of the ion current source is normal to the surface of the target and parallel to a deposition surface of the rotating substrate.

Abstract: A system and method for controlling a deposition thickness distribution over a substrate. A motor rotates the substrate, and at least one sensor senses the deposition thickness of the substrate at two or more radii on the substrate. An actuator varies a shadow of a mask disposed over a target used to sputter material on the substrate. An ion source generates an ion beam that is directed toward the target. The mask is positioned between the ion source and the target, and selectively blocks ion current from the ion source from reaching the target. A process controller is coupled to the deposition thickness sensor and the actuator. In response to the sensed deposition thickness, the process controller varies the shadow of the mask with respect to the target to control the deposition thickness distribution over the substrate.

Abstract: A system for performing sputter disposition on a substrate. A divergent ion current source generates a divergent ion beam. The ion current source has a central axis about which ions are directed toward a surface of a negatively biased target. A rotating substrate is positioned proximate to the target. The central axis of the ion current source is normal to the surface of the target and parallel to a deposition surface of the rotating substrate.

Abstract: A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate.

Abstract: A photoresist mask is provided, having a central region fabricated on an underlying layer. An overhang supported by the central region is separated from the underlying layer by a recessed area. The recessed area has an aspect ratio of at least about 1.5. The mask may be advantageously used to pattern electrodes deposited through the mask by chemical vapor deposition or sputtering, such that there is no significant conductivity across the mask between the patterned electrodes.

Abstract: The present invention provides a method for shaping a mask to reduce coating non-uniformity in the radial direction. A test run of the ion beam sputtering system coats a stationary glass plate having the same area and shape as the platen. The resulting coating thickness is measured across the surface of the glass plate and plotted as a function of position. This is the plot of the flux distribution. The coating rate pattern is determined by coating thickness by coating time. The desired width of the mask, which takes the form of a segment of a radial band is adjusted to obtain the desired average coating rate for the entire segment, masked and unmasked. This is repeated for each radial band. All these radial widths put together design the functional form of the mask, the use of which provides a uniform coating of the platen in a radial direction.

Abstract: A Raman spectrum of a thin film which must be formed is measured in a thin-film forming step for forming the thin film on a member to be processed in an atmosphere, the pressure of which has been reduced. Moreover, the conditions under which the thin film is formed are controlled in accordance with a result of measurement of the Raman spectrum. At this time, the measurement of the Raman spectrum is continuously performed in an in-line manner while the thin film is being continuously formed on the elongated-sheet-like member to be processed. The measurement of the Raman spectrum is performed while the focal point of a probe of a Raman spectrometer is being controlled with respect to the member to be processed or while the output of a laser beam from the Raman spectrometer is being controlled. The thin film which must be. formed is, for example, a protective film of a magnetic recording medium. The protective film is, for example, a hard carbon film (a DLC film).

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.

Abstract: A process for making a stoichiometric and crystalline thin film CuO catalytic layer atop a gas sensing layer for the detection of dilute sulfur compound gases. The sensing layer is made using dual ion beam sputtering, where an argon ion beam sputters targets comprising Sn or its oxides, and a pure or highly concentrated oxygen ion beam is simultaneously deposited on a substrate. The catalytic layer is made using dual ion beam sputtering, where an argon ion beam sputters targets comprising CU or its oxides, and a pure or highly concentrated oxygen ion beam is simultaneously deposited on a substrate.

Abstract: A pinning layer structure is provided for a spin valve sensor of a read head which has a reactively deposited nickel oxide first film which underlies a reactively sputter deposited second film of iron oxide (Fe2O3) or (Fe3O4). In the preferred embodiment the pinning layer is composed of cobalt (Co) or cobalt iron (CoFe) which is exchange coupled to the iron oxide (Fe2O3) or (Fe3O4) second film of the pinning layer. This structure results in an improved magnetoresistive coefficient (dr/R) which is substantially maintained after annealing so that the magnetic head has good thermal stability when subjected to high temperatures in the presence of a field that is antiparallel to the pinned orientation of the magnetic moment of the pinned layer.

Abstract: A new technique is provided using only one coating material (pure silicon) to deposit thin films in a high vacuum, and using an ion source with a working gas (or gases) to control the refractive index of the thin film. This new technique can deposit different kinds of optical thin films with different refractive indices or gradient-indices and make different kinds of multilayer interference filters without opening the vacuum chamber during the process. The way of evaporation or sputtering of the coating material or target uses “electron beam evaporation”, “DC or RF magnetron sputtering”, or “ion beam sputtering”, etc. The way of controlling the refractive index of the film involves mixing Ar with O2 and N2 or just the mixture of N2 or O2, and feeding the gases into the ion source, as shown in FIG. 1 and FIG. 2. The amount of gas and the way of feeding are controlled by computer software.

Abstract: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

Abstract: A merged ion beam and plasma vapor deposition chamber and associated manufacturing process are disclosed in which thin film depositions occur in a merged deposition chamber. The chamber utilizes both ion beam and RF/DC magnetron sputtering in a single chamber. The deposition of the layers can occur in the chamber without substrate transfer in a low vacuum, eliminating the need for multiple chambers and associated timely wafer transfer steps. The result is a film deposition and growth process which utilizes the advantages unique to each of the RF/DC and IBD processes without the film degradation that occurs in robot wafer transfer chambers found in combination systems known in the art.

Abstract: A system and method for performing sputter deposition on a substrate. First, second, and third divergent ion current sources generate first, second and third divergent ion beams, respectively. The substrate faces the first ion current source. The first target faces the second ion current source, and the second target faces the third ion current source. The central axis of each ion current source is orthogonal to the central axes of the other two ion current sources.

Abstract: A system and method for simultaneously performing sputter deposition on a plurality of planar substrates. An ion current source generates an ion beam in which ions are directed toward a target. The target is formed from a section of a sphere. Each of the plurality of planar substrates has a deposition surface that is tangent to a surface of the sphere. In addition, a substrate that is a section of a sphere may be used. The deposition thickness across the spherically-shaped substrate is uniform.

Abstract: A system and method for performing sputter deposition on a substrate include ion and electron sources that generate ion and electron currents directed at a target. Biasing circuitry biases the target with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from positive and negative voltage sources and a high frequency switch. A current sensor, coupled to the biasing circuitry, monitors positive and negative currents from the target. A control system, coupled to the current sensor, varies the ion and electron currents independently. The ion and electron sources create a continuos plasma that is proximate the target. Ions attracted from the plasma sputter the target, and material from the target is deposited on the substrate. Electrons attracted from the plasma neutralize accumulated charge on the target.

Abstract: A silver oxide layer capable of absorbing and/or reflecting significant amounts of ultraviolet (UV) radiation, and a method of making the same. An ion beam including oxygen ions is utilized to densify silver material and transform it into a silver oxide inclusive layer. Due to the densification caused by the bombardment of oxygen ions, the resulting silver oxide layer is capable of absorbing and/or reflecting significant amounts of UV radiation. Such silver oxide layers may be utilized in the context of any suitable coating system where UV absorption and/or reflection is desired.

Abstract: In a method of manufacturing a photo mask blank by forming an opaque film or a semi-transmission film on a transparent substrate, the film is subjected to irradiation of an ion generated by an ion source. A warp of the substrate by a film stress can be reduced (the film stress is relaxed), and density and denseness of the film can be enhanced. The film may be deposited on the transparent substrate by a sputtering method.

Abstract: A sputtering chamber has a target that moves with an orbital motion relative to an ion beam. An X-Y assembly allows for target movement in both the horizontal and vertical directions. The X-Y assembly has a base plate, an intermediate plate, and a target mounting plate that attaches to the target. The plates are connected together by bearing blocks that slide along rails in the X and Y directions. A rotating shaft has gears that rotate a center shaft through the base and intermediate plates. The rotating center shaft has an arm on its end that attaches to the target mounting plate. The arm produces an orbital movement of the target. Rather than simply rotating the target around the center shaft, the center of the target orbits around the center of the center shaft. Ion-beam wear is spread across the target surface, extending target life and improving deposition uniformity.

Abstract: Stable operation of an ion beam deposition (IBD) station forming part of a multi-station apparatus and formation therein of a tribologically robust DLC-type i-C:H ultra-thin protective overcoat for high recording density magnetic media are achieved by pulsing (i.e., limiting) the flow of a hydrocarbon source gas to the ion beam source to deposition intervals between substrate transfer/pressure cycling. Embodiments include utilizing a circularly-shaped, closed drift, end Hall type ion beam source as part of a multi-process station apparatus, wherein undesirable arcing of the ion beam source during substrate transfer is eliminated, or at least substantially reduced, as a result of the pulsed supply of hydrocarbon source gas to the ion beam source.

Abstract: A method for forming an indium tin oxide thin film on a substrate in the present invention includes the steps of introducing a mixture of an inert gas and a low electron affinity element in close proximity to a target as a primary sputter ion beam source, providing an oxygen gas between the target and the substrate, applying an electrical energy to the target to ionize the mixture, confining electrons generated in the ionization in close proximity to a surface of the target facing towards the substrate, disintegrating negatively charged ions from the target, and forming the indium tin oxide thin film on the substrate.

Abstract: A method is described for removing a particle from a surface of a semiconductor wafer. In general, the method involves positioning an electrically conductive surface near the particle to be removed. An electrical charge is created on the electrically conductive surface. A charged particle beam is formed, wherein the charged particle beam includes particles having an electrical charge opposite the electrical charge of the electrically conductive surface. The charged particle beam is directed at the particle to be removed. When struck by the charged particle beam, the particle to be removed absorbs a portion of the charged particles of the charged particle beam and acquires an electrical charge opposite the electrical charge of the electrically conductive surface.

Abstract: Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp3/Sp2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 &mgr;m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

Abstract: A target of fullerene is placed with a substrate in a vacuum chamber. A charged beam, i.e., an electron beam or an ion beam, is directed at the target with a power adequate to emit fullerene molecules from the target and not high enough to form significant amounts of fullerene having a higher molecular structure than the target fullerenes. Fullerene is deposited on the substrate. Regardless of the approach used to deposit the fullerenes, the substrate can be heated during deposition to a temperature above the fullerene-to-fullerene disorption temperature to form a coating consisting of an approximate monolayer of fullerene.

Abstract: We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, said method comprising the steps of: a) applying a first portion of a sculptured layer with sufficiently low substrate bias that a surface onto which said sculptured layer is applied is not eroded away or contaminated in an amount which is harmful to said semiconductor device performance or longevity; and b) applying a subsequent portion of said sculptured layer with sufficiently high substrate bias to sculpture a shape from said the first portion, while depositing additional layer material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces and is especially helpful when the conductive layer is copper.

Abstract: A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering.

Abstract: In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface facing the thin-film particle source. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a lateral moving means for laterally moving and controlling a duration of exposure time across a radial direction for each of the substrates for controlling thickness uniformity of the thin-film deposited on each of the substrates.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin film.

Abstract: Before submitting a sample, including a first material layered upon a substrate, to an ion milling process, whereby a second material is sputtered onto the surface of the first material and the sample is then submitted to an etching process, an irregularity is formed on the surface of the first material. The overall process results in the formation of cones, or micro-tip structures, which may then be layered with a layer of low work function material, such as amorphous diamond. The irregularity in the surface of the first material may be formed by polishing, sandblasting, photolithography, or mechanical means such as scratching.

Abstract: In accordance with one specific embodiment of the present invention, an ion-beam deposition apparatus uses a plurality of stationary sputter targets so located so as to provide a predetermined thickness distribution of the target material on a substrate. This distribution is obtained without mechanical motion of ion sources, sputter targets, or a shaper located between the sputter targets and deposition substrate.

Abstract: A linear microwave plasma source comprises a leaktight chamber (10) under negative pressure and a microwave injection guide (12) that ends in a 90° elbow (13) opening perpendicularly into the chamber, a leaktight microwave window (15) being placed between the microwave injection guide (12) and the 90° elbow (13) such that they cause ionization of the gas in a zone (35) of electron cyclotron resonance located a few centimeters inside the elbow (13) that is under negative pressure. First and second permanent magnets (13, 17) are disposed on either side of said window (15), said magnets (16, 17) being installed with alternating polarity. A sputtering target (21) is located inside the plasma stream and electrically insulated from the chamber and charged with a negative polarity, and means (27) for injecting gas for controlling the ionic species of the plasma stream are provided.

Abstract: A method for depositing films of a fluorinated compound is disclosed, wherein a reactive sputtering process allows the use of a metal or other non-fluorinated material as the target material. The process developed also utilizes XeF2 as a vapor source, which provides fluorine for the formation of the fluorinated compound. Unlike reactive process gases, such as SF4 and CF4, used in previous experiments attempting reactive sputtering of fluoride compounds, the XeF2 vapor does not result in unwanted contamination due to a reactive gas cation, i.e., inclusions of carbon or sulfur. These, and other considerations, have allowed the development of a process for fabricating dense, optical quality fluoride films. At the same time, the material costs and handling expenses related to the XeF2 source are also relatively low.

Abstract: A reflection-type mask for use in exposing a pattern onto a photosensitive material, wherein the mask includes a reflection area, having a multilayer film, for reflecting exposure light, and a non-reflection area which does not reflect the exposure light, the reflection area and the non-reflection area forming a mask pattern, wherein at least one layer of the multilayer film consists of an impurity semiconductor, whereby bad influences, for example, caused by poor conduction of the multilayer film at mask-production stage, can be prevented.

Abstract: A method for chemical vapor deposition for producing a thin film. The method includes the steps of: introducing a reactive gas into a reaction chamber wherein a substrate is supported in the reaction chamber; combining charged particles with a component of the reactive gas for ionizing the component; and electrostatically depositing the ionized component onto the substrate in an electric field. Charged particles may be photoelectrons or positive or negative ions produced by discharge. The reactive gas may be solely an ingredient gas containing a component for a thin film or a mixture of the ingredient gas and an oxidizing or reducing gas.

Abstract: A method constructs first and second seed layers of a seed layer structure in-situ for a top spin valve sensor for increasing magnetoresistive coefficient dr/R of the sensor, reducing a ferromagnetic coupling field HFC between pinned and free layers of the sensor and reducing coercivity HC of the free layer. The first layer, which is aluminum oxide (Al2O3), is ion beam sputter deposited on a first shield layer in a sputtering chamber under a specified pressure. The second seed layer, which is nickel oxide based, is deposited on the first seed layer by ion beam sputter deposition without breaking the vacuum of the chamber. The free layer is then directly deposited on the second seed layer followed by formation of the remainder of the layers of the spin valve sensor.

Abstract: A method of repairing opaque defects in lithography masks entails focused ion beam milling in at least two steps. The first step uses a large pixel spacing to form multiple holes in the defect material, with the milled area extending short of the defect material edge. The final step uses a pixel spacing sufficiently close to produce a smooth floor on the milled area, and extends to the edge of the defect. During the second step, an etch enhancing gas such as bromine is preferably used.

Abstract: Before submitting a sample, including a first material layered upon a substrate, to an ion milling process, whereby a second material is sputtered onto the surface of the first material and the sample is then submitted to an etching process, an irregularity is formed on the surface of the first material. The overall process results in the formation of cones, or micro-tip structures, which may then be layered with a layer of low work function material, such as amorphous diamond. The irregularity in the surface of the first material may be formed by polishing, sandblasting, photolithography, or mechanical means such as scratching.