Abstract: In plasma activated chemical vapour deposition a plasma decomposition unit is used that is arranged in or connected to a vacuum vessel having a relatively low pressure or vacuum, to which an operating gas is provided. Periodically repeated voltage pulses are applied between the anode and the cathode of the plasma decomposition unit in such a manner that pulsed electric discharges are produced between the cathode and the surrounding anode of the plasma decomposition unit. The anode is arranged in a special way so that at least a portion thereof will obtain only an electrically conductive coating or substantially no coating when operating the unit. For that purpose, the anode includes a portion located in the direct vicinity of the free surface of the cathode. The portion is a flange or edge portion which is located or extends over margins of the free surface of the cathode.

Abstract: Uniformity in a plasma process can be increased by increasing a plasma confining effect by a cusp magnetic field over the whole circumference. There is provided a plasma processing apparatus which performs a process on a substrate by generating plasma of a processing gas in a depressurized processing chamber. The apparatus includes a magnetic field generation unit 200 including two magnet rings 210 and 220 vertically spaced from each other and arranged along a circumferential direction of the processing chamber. Each of the magnet rings includes multiple segments 212 and 222 of which magnetic poles are alternately reversed two by two along a circumferential direction of an inner surface of the magnet ring. In the magnetic field generation unit 200, arrangement of upper and lower magnetic poles is changed by rotating the lower magnet ring 220 in a circumferential direction with respect to the upper magnet ring 210.

Abstract: A first material with a known maximum temperature of operation is coated with a second material on at least one surface of the first material. The coating has a melting temperature that is greater than the maximum temperature of operation of the first material. The coating is heated to its melting temperature until the coating flows into any cracks in the first material's surface.

Abstract: Various embodiments of the present invention are generally directed to an apparatus and method for low temperature physical vapor deposition (PVD) of an amorphous thin film layer of material onto a substrate. A PVD chamber is configured to support a substrate and has a cathode target with a layer of sputtering material thereon, an anode shield, and a magnetron assembly adjacent the target. A high impulse power magnetron sputtering (HiPIMS) power supply is coupled to the PVD chamber, the power supply having a charging circuit and a charge storage device. The power supply applies relatively high energy, low duty cycle pulses to the magnetron assembly to sputter, via self ionizing plasma, relatively low energy ions from the layer of sputtering material to deposit an amorphous thin film layer onto the substrate.

Abstract: A sputtering film forming method. which positions a target 4 and 5 at an incline to a surface of a substrate 10 whereupon a film is to be formed, and forms the film upon the surface of the substrate 10 whereupon the film is to be formed in an incline direction while the substrate 10 is rotated about a normal axis, terminates the forming of the film at a predetermined timing from the commencement of the forming of the film, wherein the forming of the film is terminated, when the substrate has rotated by 360 degrees×n+180 degrees+?, where n is a natural number, including 0, and ?10 degrees<?<10 degrees.

Abstract: The invention relates to the control of a reactive high-power pulsed sputter process. The invention particularly relates to a method for controlling a process of the aforementioned kind, wherein a controlled variable is measured and an adjustable variable is modified based on the measured controlled variable in order to adjust the controlled variable to a predetermined setting value. The method according to the invention is characterised by modifying the discharge capacity by varying the pulse frequency of the discharge.

Abstract: A deposition apparatus and a method for sputtering material on a substrate is provided with a substrate holder for holding the substrate, a rotatable target adapted for being sputtered, and a heating system including a back side heating for heating the substrate from the back and a front side heating for heating the substrate from the front. The rotatable target acts as the front side heating and is adapted for heating the substrate to a temperature of at least 100° C. A method for performing this method is disclosed.

Abstract: The present invention relates to an optical device and a method of in situ treating an optical component (2, 6, 13) reflecting EUV and/or soft X-ray radiation in said optical device, said optical component (2, 6, 13) being arranged in a vacuum chamber (14) of said optical device and comprising one or several reflecting surfaces (3) having a top layer of one or several surface materials. In the method, a source (1, 5) of said one or several surface materials is provided in said chamber (14) of said optical device and surface material from said source (1, 5) is deposited on said one or several reflecting surfaces (3) during operation and/or during operation-pauses of said optical device in order to cover or substitute deposited contaminant material and/or to compensate for ablated surface material.

Abstract: An etching depth measuring device for measuring the etching depth of an object to be processed, when etching the object to be processed by using active species present in a plasma, the etching depth measuring device comprising: a chamber in which is formed an introduction port for introducing a part of the active species; a member to be processed which is housed in the chamber and etched by the part of the active species; and a mass detecting element which receives a substance generated from the member to be processed and detects the mass of the received substance.

Abstract: A method and apparatus for physical vapor deposition of films on a substrate is provided. The apparatus comprises a series of connected sputtering chambers through which a substrate passes to undergo sequential deposition processes. The chambers have passages through which the substrates move, and through which process gases may leak. Target gas flows to each chamber are established by operating each chamber while adjacent chambers are idle, measuring the extent of gas communication between the chambers, and reducing the flows by an amount based on the extent of gas leakage.

Abstract: In order to automatically adjust a self-bias on a substrate to a constant value at all times and to form a high-quality insulating film with excellent process reproducibility, a vacuum thin film forming apparatus according to the present invention includes: a high-frequency sputtering device having a chamber, an evacuation means for evacuating the inside of the chamber, a gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder; and at least one vacuum treatment chamber that can be selected from a group including a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, wherein the high-frequency sputtering device further includes a variable impedance mechanism electrically connected

Abstract: A sputter deposition method and system for producing a metal oxide film, especially a dielectric standoff layer of a thin film/nanolayer capacitor. A noble gas, such as argon, is used to sputter metal ions from a metal target, such as niobium, in the presence of a partial pressure of oxygen in a vacuum chamber. And an oxygen-to-noble gas flow ratio entering the vacuum chamber is controlled by a flow controller to be within an operating range defined between a predetermined lower limit (such as 30% O2/Ar for niobium oxide) associated with a minimum transparency/stoichiometric threshold and a predetermined upper limit (such as 80% O2/Ar for niobium oxide) associated with a maximum roughness/porosity threshold, so that a reaction between the sputtered metal ions and the oxygen produces a substantially transparent metal oxide film with a substantially smooth non-porous surface.

Abstract: A method and device for magnetron sputtering are provided. A magnetron coating system includes a first coating source and an auxiliary substrate arranged between the first coating source and an area into which a substrate to be coated is to be received. The system also includes a magnetron having a cathode composed of the auxiliary substrate. Additionally, the system includes a device structured and arranged to determine an area density of the auxiliary substrate.

Abstract: An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.

Abstract: The invention relates to a transparent barrier film, comprising a transparent thermoplastic film and at least one permeation barrier layer, wherein the permeation barrier layer comprises a chemical compound of the elements zinc, tin and oxygen, and the mass fraction of zinc is 5% to 70%. Furthermore, the invention relates to a method for the production of a barrier film of this type.

Abstract: A method of manufacturing a tungsten sputtering target includes pressing a high purity tungsten powder to form a pressed compact, first sintering the pressed compact at a temperature of 1450-1700° C. for one hour or longer after the pressed compact is heated at a heating-up rate of 2-5° C./min on the way to a maximum sintering temperature, second sintering the pressed compact to form a sintered body at a temperature of 1900° C. or higher for 5 hours or longer, working the sintered body to obtain a shape of a target, subjecting the target to a grinding work of at least one of rotary grinding and polishing, and subjecting the target to a finishing work of at least one of etching and reverse sputtering.

Abstract: A surface processing method of processing a surface of a substrate includes disposing the substrate in a vacuum chamber, processing by applying a high-frequency voltage to the substrate and by sputtering the surface of the substrate, measuring a cathode drop potential generated at the substrate in the processing and obtaining a time integration value of the cathode drop potential, and determining whether or not a processed state of the surface of the substrate is good based on the time integration value obtained in the measuring.

Abstract: The present invention provides a method and an apparatus for improving the etch uniformity across a substrate during a plasma etch process that employs the use of an inductively coupled plasma helical inductor. The plasma apparatus comprising a vacuum chamber, a support member in the vacuum chamber for holding the substrate, an etchant gas supply for providing an etchant gas to the vacuum chamber, an exhaust in fluid communication with the vacuum chamber, an RF power source and a helical inductor disposed around or near a portion of the vacuum chamber. A sensor is provided for measuring a process attribute to generate a signal to a controller that then controls a mechanism that varies the position of the helical inductor so that the uniformity of the plasma etch is improved.

Abstract: An exemplary optical film includes a transparent substrate having a surface, and an optical film coated on the surface of the transparent substrate. The optical film includes pure metal ions and reaction compounds mixed with the pure ions. The proportion of the ions to the reaction compounds in the optical film gradually changes along a direction from the surface of the transparent substrate to a surface of the optical film farthest from the surface of the transparent substrate. An exemplary method to form such an optical film is also provided.

Abstract: Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 500 mass ppm of aluminum oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

Abstract: Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

Abstract: A method of reactive magnetron sputtering for large-area deposition of a chalcopyrite absorber layer for thin-film solar cells on a substrate, using at least one magnetron sputter source with at least one copper target, and using an inert gas and a chalcogen-containing reactive gas in a magnetron plasma, includes introducing the chalcogen-containing reactive gas directly at the substrate. The chalcogen-containing reactive gas fraction is set at 5 to 30% of the inert gas fraction in the magnetron plasma. A sputtering pressure of between 1 and 2 Pa, is set. A negative bias voltage is applied to the substrate. The magnetron plasma is excited by rapid frequency AC voltage above 6 MHz. The substrate is heated to a temperature between 350° C. and 500° C.

Abstract: Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm?1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm?1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm?1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.

Abstract: A magnetron sputtering source includes a plurality of electrodes and a switching circuit. The switching circuit sequentially connects each of the plurality of electrodes to a ground reference, making it anodic, while connecting the remaining of the plurality of electrodes as cathodes. A method of operating the magnetron sputtering source includes steps of: providing a plurality of target arrangements; causing each of the plurality of target arrangements to act as a cathode; and sequentially causing each of the plurality of cathodes to temporarily act as an anode.

Abstract: Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga2O3)/zinc oxide (ZnO) sputtering target (GZO target) improves the conductivity and bulk density of the target by adding trace amounts of specific elements. In other words, it is possible to obtain a target capable of increasing the sintered density, inhibiting the formation of nodules, and preventing the generation of abnormal electrical discharge and particles by improving the component composition. Further, provided are a method of forming a transparent conductive film with the use of the target, and a transparent conductive film formed thereby.

Abstract: The present invention is related in general to chemical and biological detection and identification and more particularly to systems and methods for the rapid detection and identification of low concentrations of chemicals and biomaterials using surface enhanced Raman spectroscopy.

Abstract: A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

Abstract: A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.

Abstract: Method for controlling a high-voltage power supply generator for a magnetron (16) for producing a cold plasma inside a hollow body in order to carry out the deposition of a boundary layer within said hollow body, characterised in that it comprises selecting (E2) a generator operation mode from a plurality of operation modes (MODE 1, MODE 2, MODE 3), modifying the operation mode (MODE 1, MODE 2, MODE 3) of the generator by varying at least one coefficient ((a, b, c); (a1, b1, c1)) defining a maximal power Pmax of the waveform of the supply power of the magnetron (16) according to a set average power Pmoy of the magnetron (16), the magnetron (16) supply waveform being repeated recurrently with a cyclic conduction ratio Th depending on the set average power Pmoy and/or on the maximal power Pmax.

Abstract: A method and apparatus for detecting a wafer-level arc in a plasma process chamber. The method includes, for example, monitoring a waveform of a signal supplied to the plasma process chamber; detecting a feature in the waveform; responsive to detecting the feature, determining whether the waveform has stabilized after the feature; responsive to the waveform stabilizing, determining whether the feature is part of a bidirectional waveform anomaly or a unidirectional waveform transition; and recording to a computer-readable medium either an indication of the feature being part of a bidirectional waveform anomaly or an indication of the feature being a unidirectional waveform transition.

Abstract: A method for operating one or more plasma processes in a plasma chamber, with at least two power supplies, the method comprising the following process steps: a. carrying out an arc detection for at least one of the power supplies; b. generating at least one signal relating to the arc detection and/or data relating to the arc detection; transferring the at least one signal and/or the data to a plasma process-regulating device and/or to one or more other power supplies or to one or more of the arc diverter devices associated with the other power supplies.

Abstract: The present invention relates to a sputtering cathode of the magnetron type and a control method for such a device for, in a vacuum process, depositing very thin films on substrates for a wide variety of commercial and scientific purposes including production of circular optical discs such as CD- or DVD-discs. In particular, the sputtering device comprises a magnet system disposed behind the target and comprising at least three permanent magnets connected to each other by means of a yoke, each of the permanent magnets having a different polarity, wherein the permanent magnets is adapted to interact with each other so as to form a magnetic flux line plateau having magnetic flux lines being substantially parallel with the sputtering surface of the target.

Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate.

Abstract: The present invention provides a sputtering cathode whereby it is possible to increase the degree of freedom to adjust a distance between a target and a magnet unit. A sputtering cathode in accordance with one embodiment of the present invention includes a plurality of magnet units arranged at positions opposite to the rear surface of the target and a distance adjusting mechanism for separately adjusting a distance between the target and a magnet unit for each magnet unit. In addition, the sputtering cathode includes a reciprocating movement mechanism for reciprocating a plurality of magnet units in parallel to the rear surface of the target. The plurality of magnet units, the distance adjusting mechanism and the reciprocating movement mechanism may be housed in a magnet chamber that can be evacuated.

Abstract: This application discloses a thin-film deposition apparatus comprising a vacuum chamber and a partition separating the inside of the vacuum chamber into two areas. A substrate is capable of passing through an inside opening provided in the partition. The inside opening is closed by a valve. A thin film is deposited onto the substrate in the first area. The substrate is heated by a heater in the second area prior to the deposition. The substrate is held by a holder in point contact while heated. A boosting-gas is introduced into the second area during the heating, thereby increasing pressure up to a viscous flow range. A pumping line evacuates the first area at a vacuum pressure all the time. The pumping line also evacuates the introduced boosting-gas from the second area to make the second area at a vacuum pressure when the valve is opened.

Abstract: A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.

Abstract: The present invention provides a multi-target sputtering apparatus including an increased number of targets which can be sputtered simultaneously, and a method for controlling the sputtering apparatus. In one embodiment of the present invention, first and second shutter plates are provided between a substrate and target electrodes and paths between intended targets and the substrate are shut off by the shutter plates to perform a pre-sputtering step. In addition, the first and second shutter plates are rotated as appropriate at the time of transition to a full-scale sputtering step, so as to overlap through-holes provided in the shutter plates, thereby opening up paths between the intended targets and the substrate. Then, a full-scale sputtering step is performed.

Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

Abstract: In one embodiment, the erosion profile of a shaped target (e.g., hollow cathode target) of a magnetron apparatus is enhanced by using a plurality of sputtering tracks, such as plasma loops, on the target. The erosion profile may be optimized by recording the erosion profile and making adjustments to the magnetic configuration of the magnetron. The recording may include two-dimensional plots of erosion/redepostion rates or a grid overlay tracing of a static burn test, for example. The magnetic configuration of the magnetron may include a rotating magnetic array. The rotating magnetic array may be adjusted to change the shape or location of the plurality of plasma loops to achieve an optimum erosion profile. The target may have a flared lip to increase erosion on the lip, if needed.

Abstract: The present invention relates to a method and apparatus for real-time monitoring and controlling surface area erosion of a sputter target assembly utilized in a physical vapor deposition process.

Abstract: A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency ?, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency ? of rotation of the magnet other than the first harmonic.

Abstract: This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source. A deposition process step is performed in which metal vapor is produced from a target of a PVD source. Location and sputter efficiency at the target surface is enhanced by moving a magnet pack to create a traveling or sweeping magnetic field envelope. The target is energized from a DC power supply and pressures effective for an efficient thermalization of the sputtered atoms (30<p<100 mTorr) are maintained in the chamber during deposition. A uniform thickness of the metal on the wafer is produced within each magnet sweeping cycle.

Abstract: The present technology relates to a method for coating a workpiece, in which a material is applied to the workpiece via a thermal spraying process that is monitored and evaluated to establish on-line process control. According to certain embodiments of the presently described method, infrared emissions of a spray jet are detected with the aid of at least one infrared camera, and properties of the spray jet are determined by analyzing the infrared emissions of the spray jet, which are detected by the at least one infrared camera.

Abstract: A method and system for depositing a thin film on a substrate. In the system a target material is deposited and reacted on a substrate surface to form a substantially non-absorbing thin film. The volume of non-absorbing thin film formed per unit of time may be increased by increasing the area of the surface by a factor of “x” and increasing the rate of deposition of the target material by a factor greater than the inverse of the factor “x” to thereby increase the rate of formation of the volume of non-absorbing thin film per unit of time.

Abstract: A control system and method for controlling two motors determining the azimuthal and circumferential position of a magnetron rotating about the central axis of the sputter chamber in back of its target sputtering and capable of a nearly arbitrary scan path, e.g., with a planetary gear mechanism. A system controller periodically sends commands to the motion controller which closely controls the motors. Each command includes a command ticket, which may be one of several values. The motion controller accepts only commands having a command ticket of a different value from the immediately preceding command. One command selects a scan profile stored in the motion controller, which calculates motor signals from the selected profile. Another command instructs a dynamic homing command which interrogates sensors of the position of two rotating arms to determine if the arms in the expected positions. If not, the arms are rehomed.

Abstract: A system and method for sputtering having a substrate holder, the target-cathode and the shield that are all electrically isolated from each other and are all capable of independently being subjected to different voltages. The substrate holder can be a pallet that holds a plurality of substrates. The system further includes a plurality of target-cathodes and shields disposed along the path of travel of the moving substrate holder, and a controller configured to selectively vary the target-cathode voltage, the shield voltage, and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes and shields are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage and shield voltage.

Abstract: An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.

Abstract: A system and a method for plasma enhanced thin film deposition are disclosed, in which the system comprises a plasma enhanced thin film deposition apparatus and a plasma process monitoring device. The plasma enhanced thin film deposition apparatus receives pulsed power and a reactive gas, whereby plasma discharging occurs to ionize the reactive gas into a plurality of radicals for thin film deposition. The plasma process monitoring device comprises an optical emission spectroscopy (OES) and a pulsed plasma modulation device, in which the OES detects spectrum intensities of the radicals and the pulsed plasma modulation device calculates a spectrum intensity ratio of the radicals so as to modulate the plasma duty time of pulsed power, thereby high deposition rate as well as real-time monitoring on thin film deposition quality can be achieved.

Abstract: The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate.

Abstract: An apparatus for generating plasma includes a cathode having an evaporable surface configured to emit a material comprising plasma and macroparticles; oppositely directed output apertures configured to direct the plasma; a filter configured to transmit at least some of the plasma to the output apertures while preventing transmission of at least some of the macroparticles, the filter comprising at least one deflection electrode disposed generally parallel to and facing at least a portion of the evaporable surface; a first element for generating a first magnetic field component having a first polarity between the cathode and the at least one deflection electrode; and a second element for generating a second magnetic field component having a second polarity at the evaporable surface of the cathode that is opposite that of the first polarity such that a low-field region is created between the evaporable surface and the at least one deflection electrode.