Abstract: Production of a thin-film system containing at least one ultra-thin film, preferentially in the film thickness range from 1 to 10 nm, which is deposited by plasma-aided chemical or physical vapor-phase deposition using magnetron discharges. The method is characterized in that in the course of deposition of the ultra-thin film the power output is introduced into the plasma in the form of a controlled number of power pulses and that the average power output during the pulse-on time is set higher by a factor of at least 3 than the averaged power output over the entire coating time during deposition of the ultra-thin film.

Abstract: An electrical field between a positive anode and a negative target in a cavity and a magnetic field in the cavity cause electrons from the target to ionize neutral gas (e.g. argon) atoms in the cavity. The ions cause the target to release sputtered atoms (e.g. aluminum) for deposition on a substrate. A shield between the target and the substrate inhibits charged particle movement to the substrate. The anode potential may be positive, and the shield and the magnetic members may be grounded, to obtain electron movement to the anode, thereby inhibiting the heating of the shield and the magnetic members by electron impingement. The anode may be water cooled. The magnitude of the positive anode voltage relative to the target voltage provides selectively for (a) a uniform thickness of sputtered atoms on the walls of a groove in the substrate or (b) a filling of the groove by the sputtered atoms and a uniform thickness of deposition on the substrate surface including the filled groove.

Abstract: A vacuum treatment system has a vacuum treatment chamber, with a sensor arrangement to detect the treatment atmosphere momentarily existing in the treatment area. An ACTUAL value sensor of the sensor arrangement for one or more of the elements to establish a treatment atmosphere is a regulating element of a control circuit for the treatment atmosphere in the treatment area. A workpiece carrier is drivably movable in the chamber through the treatment area having the treatment atmosphere. At least one of the elements modulates the treatment atmosphere in the treatment area according to a defined profile as a function of the workpiece carrier position. A process is disclosed for manufacturing workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with the defined profile.

Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.

Abstract: A whole organic EL display fabricating apparatus is provided inside a vacuum chamber. In this case, a first patterning unit B through a third patterning unit D for sequentially forming luminescent layer patterns of GREEN, BLUE, and RED on an anode pattern on a strip-shaped flexible substrate 1, and a fourth patterning unit E for forming a cathode pattern on the subsequent stage are provided. The first patterning unit B is provided with a first cooling can 21 and a vacuum vapor deposition unit below for forming the luminescent layer pattern of GREEN. The structures of the second patterning unit through the fourth patterning unit are similar to that of the first patterning unit. In fabricating a display, the substrate 1 is caused to travel from the first cooling can 21 toward a fourth cooling can 64 by the roll-to-roll system.

Abstract: A vacuum treatment system has a vacuum treatment chamber, with a sensor arrangement to detect the treatment atmosphere momentarily existing in the treatment area. An ACTUAL value sensor of the sensor arrangement for one or more of the elements to establish a treatment atmosphere is a regulating element of a control circuit for the treatment atmosphere in the treatment area. A workpiece carrier is drivably movable in the chamber through the treatment area having the treatment atmosphere. At least one of the elements modulates the treatment atmosphere in the treatment area according to a defined profile as a function of the workpiece carrier position. A process is disclosed for manufacturing workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with the defined profile.

Abstract: Method for manufacturing a workpiece by a vacuum treatment process includes providing a vacuum treatment system with first second parts in a vacuum chamber. Either a sensor or an adjusting element with first signal connection is mounted on the second part. An electronic unit in the chamber has a reference potential and a second electric signal connection. The first part is connected to a system reference potential. A workpiece goes into the chamber and the method includes operating the second part at a further electric potential different from the system reference potential by at least 12 V. The method includes connecting the first electric signal connection to the second electric signal connection and maintaining the reference connection during operation on the further electric potential by metallically connecting the reference connection to the second part.

Abstract: We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 &mgr;&OHgr;cm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

Abstract: The present invention provides an efficient thin film forming apparatus which is capable of correcting a film thickness so as to take care of a variation in distribution in the film thickness and to take care of the circumferential distribution of the film thickness, as well as a method for forming a thin film using this film forming apparatus.

Abstract: Sequential sputtered film deposition of distinct materials on a workpiece is obtained with discrete targets composed of such distinct materials disposed on separate area portions of a common cathode/heatsink. Sputtering without cross contamination of the deposited films is enabled during an interval of relative motionbetween the target and workpiece or in an indexed static relative disposition, wherein the workpiece projection is entirely proximate one such portion to deposit the respective layer.

Abstract: A target assembly comprising a clamp and a target where, in a preferred embodiment, the need for bonding and/or a backing plate is eliminated.

Abstract: A system and method for sputter depositing a protective coating on a surface. The system includes a coating device, a first material for coating, a second material for coating and a surface to be coated. Preferably, the first material and the second material are sputter deposited on the surface in a predetermined proportion to yield a coating having tailored thermophysical and surface resistance properties. The proportion may be controlled by controlling exposed surface area of the first material and exposed surface area of the second material, as well as a magnetic field applied to the first and second materials.

Abstract: A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

Abstract: A method and apparatus for monitoring and controlling reactive sputter deposition, particularly useful for depositing insulating compounds (e.g., metal-oxides, metal-nitrides, etc.). For a given nominal cathode power level, target material, and source gases, the power supplied to the cathode (target) is controlled to stabilize the cathode (target) voltage at a specified value or within a specified range corresponding to a partial pressure or relative flow rate value or range of the reactive gas. Such an operating point or range, characterized by a specified voltage value or range and corresponding reactive gas relative-flow/partial-pressure value or range, may be determined empirically based on measuring the cathode voltage as a function of reactive gas relative-flow/partial-pressure for the given nominal power.

Abstract: A thin film of a metal compound such as metal oxide, nitride and carbide is formed on a substrate by sputtering a target in vacuum in the presence of an inert gas and a reactive gas. From a curve of an input power supplied from a DC supply to the target versus an input voltage between the target and the substrate, a transition point of input power at which an abrupt change of the input voltage occurs is determined. The input power during sputtering is controlled using the transition point as a reference, thereby controlling the composition or physical properties of the thin film. When a cobalt oxide thin film is formed on a substrate in this way, rubber can be vulcanized thereto to form a firm bond.

Abstract: A vacuum treatment system in which a part (9) is provided inside a vacuum treatment chamber (1). A potential (&phgr;9) which deviates from the system reference potential (&phgr;0) by approximately at least ±12 V is applied to said part. A sensor and/or an actuator (11) is/are arranged on said part. In addition, the invention comprises an electronic unit (13) which is connected to the sensor and/or actuator. Processing signals on the unit (13) is considerably simplified in that the electronic unit (13) is operated as a reference potential on the potential (&phgr;9) of said part (9).

Abstract: Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.

Abstract: A method of adjusting plasma processing of a substrate in a plasma reactor having an electrode assembly. The method includes the steps of positioning the substrate in the plasma reactor, creating a plasma in the plasma reactor, monitoring optical emissions emanating from a plurality of different regions of the plasma in a direction substantially parallel to the surface of the substrate during plasma processing of the substrate, and determining an integrated power spectrum for each of the different plasma regions and comparing each of the integrated power spectra to a predetermined value. One aspect of the method includes utilizing an electrode assembly having a plurality of electrode segments and adjusting RF power delivered to the one or more electrode segments based on differences in the integrated power spectra from the predetermined value.

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition processes are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: A method and system for producing a thin film with highly uniform (or highly accurate custom graded) thickness on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source with controlled (and generally, time-varying) velocity. In preferred embodiments, the method includes the steps of measuring the source flux distribution (using a test piece that is held stationary while exposed to the source), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of sweep velocity modulation recipes, and determining from the predicted film thickness profiles a sweep velocity modulation recipe which is adequate to achieve a predetermined thickness profile.

Abstract: An iPVD apparatus (20) is programmed to deposit material (10) into high aspect ratio submicron features (11) on semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). The modes operate at different power and pressure parameters. Pressure of more than 50 mTorr, for example, is used for sputtering material from a target while pressure of less than a few mTorr, for example, is used to etch. Bias power on the substrate is an order of magnitude higher for etching, producing several hundred volt bias for etching, but only a few tens of volts for deposition. The alternating etching modes remove deposited material that overhangs edges of features on the substrate, removes some of the deposited material from the bottoms (15) of the features, and resputters the removed deposited material onto sidewalls (16) of the features. The substrate (21) is cooled during deposition and etching, and particularly during etching to substantially below 0° C.

Abstract: A method of use in fabricating a device comprising a thin film of material, the fabrication using magnetron sputtering to deposit the thin film on a surface of some other material, the method including the step of: performing successive sputtering cycles, each cycle including sputtering at a first gas pressure so as to achieve a predetermined first thickness, and sputtering at a second, different gas pressure, so as to obtain a predetermined second thickness. The thin film so deposited has an average stress intermediate between the first stress and the second stress, an average stress that can be made to be approximately equal to a predetermined intermediate stress by a judicious choice of the time for sputtering at each of the two pressures. Usually, the thin film is built up incrementally, using many successive cycles of sputtering at first the first gas pressure and then the second gas pressure.

Abstract: An enhanced DC plasma processing system which acts to immediately stop current from flowing through the plasma allows a variety of alternative embodiments for varying applications. In one embodiment, a tapped inductor is switched to ground to achieve substantial voltage reversal of about 10% upon detection of an arc condition through voltage and/or rate of voltage change techniques. This reversal of voltage is maintained long enough to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically applying a reverse voltage is effected through a timer system in the power supply.

Abstract: A system and method for forming a chemically reacted layer proximate an exposed surface of a substrate. A gas supply provides a chemically reactive molecular gas to an ion source that generates a divergent ion current directed at a target. The ion current contains at least one species of chemically reactive molecular ion, and the target is disposed in a chamber having a partial vacuum. A voltage source applies a bias to the target such that chemically reactive molecular ions from the ion source are accelerated toward the target with sufficient kinetic energy to dissociate at least some of the chemically reactive molecular ions by collision with the surface of the target to form a population of neutral chemically reactive molecular fragments, atoms or radicals at least some of which scatter away from the surface of the target and into the chamber.

Abstract: Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.

Abstract: A method and apparatus for vacuum coating plural articles employs a drum work holder configuration and a sputter source with a plurality of individually controlled anodes for effectively providing uniform coatings on articles disposed at different locations on the drum work holder. A small number of measured process parameters are used to control a small number of process variable to improve coating uniformity from batch to batch.

Abstract: The instant invention provides a vibration insensitive method of precisely polishing an object. The method includes the steps of providing an object to be polished, applying a conductive material to a non-electrical current conductive surface of the object, removing a portion of the object and the conductive material through polishing, and measuring an electric current flowing through the conductive material to monitor a progress of the polishing. Advantageously, the method does not require the polishing process to be interrupted to monitor the progress of the polishing. In fact, since the progress is measured as a function of resistance/electrical current, the progress is measured with an accuracy and precision related to each individual turn of a polishing pad. Advantageously, the instant method is remarkably vibration insensitive and is practical for the simultaneous, automatic, and precise, polishing of monolithic objects.

Abstract: The invention encompasses a method of forming a sputtering target. A wear profile for a sputtering target surface is determined. The wear profile corresponds to a shape of the used target surface after the target is subjected to the wear of having material sputtered therefrom. The wear profile is divided amongst a plurality of datapoints across the target surface. A difference in height of the target surface after the wear relative to a height of the target surface prior to the wear is calculated. The difference in height calculations generate a plurality of wear definition datapoints. Target lifetime datapoints are calculated using the wear definition datapoints, and sputtering uniformity datapoints are also calculated using the wear definition datapoints. A difference between the target lifetime datapoints and sputtering uniformity datapoints is calculated.

Abstract: Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma.

Abstract: This invention relates to a deposited film producing process that enables reduction of the time for adjusting the conditions for film formation, and brings about an improvement in the reproducibility of film thickness and film quality of the deposited film formed. This process comprises the steps of, in the state where a substrate is set in a film-forming chamber, introducing a sputtering gas containing no reactive gas into the film-forming chamber and causing discharge therein, adjusting the sensitivity of a device for monitoring emission intensity of plasma of the discharge, in such a way that the device reads a set value, and introducing at least a reactive gas into the film-forming chamber to deposit a film on the substrate by subjecting a target to sputtering while controlling the feed rate of the reactive gas in such way as to provide a constant deposition rate.

Abstract: A process gas source (16) is connected to the vacuum chamber (5), and a metering valve (12) actuated by an automatic controller is installed between the vacuum chamber (5) and the process gas source (16). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber (5) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit (14), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

Abstract: A thin film of a metal compound such as metal oxide, nitride and carbide is formed on a substrate by sputtering a target in vacuum in the presence of an inert gas and a reactive gas. From a curve of an input power supplied from a DC supply to the target versus an input voltage between the target and the substrate, a transition point of input power at which an abrupt change of the input voltage occurs is determined. The input power during sputtering is controlled using the transition point as a reference, thereby controlling the composition or physical properties of the thin film. When a cobalt oxide thin film is formed on a substrate in this way, rubber can be vulcanized thereto to form a firm bond.

Abstract: There is provided controlled fabrication of a solid state structural feature on a solid state structure by exposing the structure to a fabrication process environment the conditions of which are selected to produce a prespecified feature in the structure. A physical detection species is directed toward a designated structure location during process environment exposure of the structure, and the detection species is detected in a trajectory from traversal of the designated structure location, to indicate changing physical dimensions of the prespecified feature. The fabrication process environment is then controlled in response to the physical species detection to fabricate the structural feature.

Abstract: A sputtering system for depositing a thin film onto a substrate is disclosed wherein the system includes an evacuatable chamber which includes the substrate. In particular, the system includes a target positioned within the chamber, wherein the target has a back surface and a sputtering surface. Further, the system includes plasma for eroding the target to provide material for forming the thin film wherein erosion of the target occurs in a predetermined erosion pattern and is controlled by a shape of the plasma. The system also includes a support for supporting the substrate opposite the sputtering surface. A magnet arrangement is provided which provides a magnetic field on the target for controlling the shape of the plasma, wherein the magnet arrangement is positioned adjacent the back surface. The magnet arrangement includes a plurality of magnet segments which may be moved into desired positions so as to change the shape of the magnet arrangement.

Abstract: The present invention provides a method for forming a film of aluminum oxide in which a target containing aluminum is sputtered in a gas containing fluorine atoms.

Abstract: A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

Abstract: A method and a device fabricated according to the method, the method being of use in fabricating a device comprising a thin film of material, the fabrication using magnetron sputtering to deposit the thin film, the method including the steps of: determining a first gas pressure at which the magnetron sputtering is stable and results in the material being deposited having a first stress; determining a second gas pressure at which the sputtering is stable and results in the material being deposited having a second stress, the second stress having a value that is less than a predetermined, desired intermediate stress; and performing successive sputtering cycles, each cycle including sputtering at the first gas pressure so as to achieve a predetermined first thickness, and sputtering at the second gas pressure so as to obtain a predetermined second thickness.

Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.

Abstract: In accordance with an embodiment of the present invention, apparatus for ion-assisted magnetron deposition takes a form that includes a magnetron, a deposition substrate displaced from the magnetron, and an ion source also displaced from the magnetron and located so that the ion beam from the ion source is directed at the deposition substrate. The ion source is operated without an electron-emitting cathode-neutralizer, the electron current for this function being provided by electrons from the magnetron. In one specific embodiment, the ion source is operated so that the potential of the deposition substrate is maintained close to that of a common ground for the magnetron and the ion source. In another embodiment, the ion source is of the Hall-current type and the discharge current of the ion source is approximately equal in magnitude to the current of the magnetron discharge.

Abstract: The invention includes an apparatus and method for determining the pass through flux of magnetic materials. The apparatus comprises one or more magnetic field sensors arranged in such a way as to collect field strength data in any or all the x, y, z directions. The apparatus also comprises a magnet field source or arrangement of magnet field sources which are placed beneath the material being characterized and includes a mechanism whereby the magnetic material can be mapped by the movement of any one or combination of: magnetic field source or sources, sensors and magnetic material. The invented method comprises the use of various configurations of magnetic sources in order to generate a magnetic field that emulates the open-loop condition found in magnetron sputtering.

Abstract: A system and method for controlling a deposition thickness distribution over a substrate. A motor rotates the substrate, and at least one sensor senses the deposition thickness of the substrate at two or more radii on the substrate. An actuator varies a shadow of a mask disposed over a target used to sputter material on the substrate. An ion source generates an ion beam that is directed toward the target. The mask is positioned between the ion source and the target, and selectively blocks ion current from the ion source from reaching the target. A process controller is coupled to the deposition thickness sensor and the actuator. In response to the sensed deposition thickness, the process controller varies the shadow of the mask with respect to the target to control the deposition thickness distribution over the substrate.

Abstract: A process is provided for sputter-induced precipitation of metal oxide layers on substrates by means of a reactive sputter process. The plasma charge acting upon the target to be evaporated is provided with electric power selected such that the metal oxide layers precipitated on the substrates to be coated are deposited at a precipitation rate of ≧4 nm/s. During the coating process the substrate to be coated is arranged stationary in relation to the target material to be evaporated. The electrodes are connected in a conductive manner to the outputs of an alternating current source whereby the alternating frequency of the alternating current provided for the electrical supply of the plasma discharge is selected between 10 kHz and 80 kHz. Particularly preferred is that the precipitated oxide layer is a TiO2 layer or an SiO2 layer.

Abstract: The resistivity of titanium nitride films is reduced, by about 40% (to less than about 60 &mgr;Ohm-cm), for example; and, the film surface roughness is reduced, by about 45% (to less than 6 Å) by using a combination of particular process conditions during deposition of the film. In particular, titanium atoms produced by impact of inert gas ions upon a titanium target travel through a high density, inductively coupled rf plasma, an ion metal plasma (IMP), in which the titanium atoms are at least partially ionized. The ionized titanium ions are contacted with ionized nitrogen atoms also present in the processing chamber. The resultant gas phase composition is contacted with the surface of a semiconductor substrate on which a titanium nitride barrier layer is to be deposited.

Abstract: The present invention provides a method for shaping a mask to reduce coating non-uniformity in the radial direction. A test run of the ion beam sputtering system coats a stationary glass plate having the same area and shape as the platen. The resulting coating thickness is measured across the surface of the glass plate and plotted as a function of position. This is the plot of the flux distribution. The coating rate pattern is determined by coating thickness by coating time. The desired width of the mask, which takes the form of a segment of a radial band is adjusted to obtain the desired average coating rate for the entire segment, masked and unmasked. This is repeated for each radial band. All these radial widths put together design the functional form of the mask, the use of which provides a uniform coating of the platen in a radial direction.

Abstract: Apparatuses and methods for use in vacuum vapor deposition coating provide for simpler, economical and continuous operation. A system and method for continuously melting and evaporating a solid material for forming a coating vapor includes the use of a separate melting crucible and evaporating crucible. A system and method for energizing the evaporative solids to form a plasma which includes first and second electrodes and a device for selectively switching polarity between the first and second electrodes to avoid coating vapor deposition on the electrodes. Another a system and method for energizing the evaporative solids to form a plasma which includes an electric arc discharge apparatus with a cathodic and an anodic part. A continuously fed electrode is disclosed for continuous vaporization of electrode members in an electric arc discharge. An apparatus and method provides for measurement of the rate of evaporation from an evaporator and the degree of ionization in a vapor deposition coating system.

Abstract: A Raman spectrum of a thin film which must be formed is measured in a thin-film forming step for forming the thin film on a member to be processed in an atmosphere, the pressure of which has been reduced. Moreover, the conditions under which the thin film is formed are controlled in accordance with a result of measurement of the Raman spectrum. At this time, the measurement of the Raman spectrum is continuously performed in an in-line manner while the thin film is being continuously formed on the elongated-sheet-like member to be processed. The measurement of the Raman spectrum is performed while the focal point of a probe of a Raman spectrometer is being controlled with respect to the member to be processed or while the output of a laser beam from the Raman spectrometer is being controlled. The thin film which must be. formed is, for example, a protective film of a magnetic recording medium. The protective film is, for example, a hard carbon film (a DLC film).

Abstract: A semiconductor device fabrication apparatus includes a thermal treatment device for thermally processing a semiconductor substrate, a first oxygen monitor for monitoring the density of oxygen in said thermal treatment device, a load-lock chamber separably coupled to said thermal treatment device for housing the semiconductor substrate before thermal treatment thereof by said thermal treatment device, and a second oxygen monitor for monitoring the density of oxygen in said load-lock chamber. First, the semiconductor substrate is introduced into the load-lock chamber, and then the load-lock chamber is evacuated. Thereafter, the density of oxygen in the load-lock chamber is measured by the second oxygen monitor, and the thermal treatment device is evacuated, after which the density of oxygen in the thermal treatment device is measured by the first oxygen monitor.

Abstract: A method and apparatus are disclosed for electrically monitoring processing variations of a material deposited using a collimated process. In one embodiment, the method and apparatus are directed to monitoring variations in step coverage of a conductive material deposited using a collimated sputtering process. A substrate having a plurality of trenches is used to mimic features desired to be monitored, such as contact holes. The resistance of metal deposited into the trenches is monitored to determine the effectiveness of the collimated sputtering process.