Abstract: A small unbalanced magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly may pass through the target center, thus allowing full target coverage. A geared planetary mechanism may include a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plate supporting a cantilevered magnet assembly on the side of the drive plate facing the target. The erosion profile may be controlled by varying the rotation rate through the rotation cycle or by modulating the target power. A second planetary stage may be added or non-circular gears be used. Auxiliary electromagnetic coils may create a focusing magnetic field.

Abstract: A durable ultraphobic surface that is capable of retaining ultraphobic properties at liquid pressures of one atmosphere and above. The surface generally includes a substrate portion with a multiplicity of projecting regularly shaped microscale or nanoscale asperities disposed so that the surface has a predetermined contact line density measured in meters of contact line per square meter of surface area equal to or greater than a contact line density value “?L” determined according to the formula: ? L = - 10 ? , ? 330 ?cos ? ( ? a , 0 + ? - 90 ? ° ) where ? is the surface tension of the liquid in Newtons per meter, ?a,0 is the experimentally measured true advancing contact angle of the liquid on the asperity material in degrees, and ? is the asperity rise angle in degrees.

Abstract: The present invention is directed to a method for depositing a radial profile of a target material onto a substrate. The method comprises directing one or more target materials toward a substrate, blocking some predetermined portion of the target material with at least a first shutter so that it does not strike the substrate, and rotating the substrate relative to the first shutter while the target material is directed toward the substrate so that a radial profile is formed on the substrate. In on embodiment, the substrate is rotated, and the first shutter does not rotate. In another embodiment, the first shutter rotates and the substrate does not rotate. The method permits a radial thickness or composition gradient on the substrate to be formed. The method may also include using one or more contact masks placed on the substrate during the deposition in order to mask off particular portions of the substrate during the deposition process.

Abstract: The present invention generally provides a physical vapor deposition chamber and a method for detecting a position of a shutter disk within a physical vapor deposition chamber. In one embodiment, a physical vapor deposition chamber includes a chamber body having a shutter disk mechanism disposed therein. A housing is sealingly coupled to a sidewall of the chamber body and communicates therewith through a slot formed through the sidewall. At least a first sensor is disposed adjacent to the housing and orientated to detect the presence of a shutter disk mechanism within the housing. In one embodiment, a method for detecting the position of a shutter disk within a physical vapor deposition chamber having a substrate support generally includes moving the shutter disk away from a substrate support, and changing a state of a first sensor in response to a position of an edge the shutter disk.

Abstract: An apparatus and method for measuring the erosion profile of a metallic target in a sputtering device are provided by inserting a thin sensor into a gap between the target and a substrate pedestal. The sensor is configured to emit an energy beam toward the surface of the target and detect a reflection of the energy beam. The sensor may comprise a source element configured to emit a collimated light beam and a plurality of detectors arranged in a linear array. The sensor may also comprise optical fibers configured to reduce the size of the sensor. The detectors are positioned relative to the source element so that one of the detectors in the array will be illuminated by a reflection of the collimated light beam. The distance from the sensor to the target may be derived from the position of the detector illuminated by the reflected beam.

Abstract: A method for creating a material library of surface areas having different properties in which a substrate is coated. The substrate is subjected to a combined pretreatment procedure.

Abstract: A vapor deposition process for depositing TiO2 and a vapor desposition process for depositing SiO2 are alternately repeated in a multi-layer film forming process. A refractive index that a thin film formed by each vapor depositing will provide is individually determined prior to each relative vapor depositing, and vapor deposition control data is prepared based on such a refractive index. Each vapor deposition is controlled by using a relative vapor deposition control data thus prepared. Therefore, each vapor deposition process can be accurately controlled according to the refractive index of a thin film even if repeated vapor deposition processes change the refractive index. Accordingly, a multilayer film having desired optical characteristics can be formed.

Abstract: The invention relates to a method for regulating MF or HF sputtering processes, a harmonic analysis of the electrical discharge parameters being implemented and the MF or HF output and/or the reactive gas flow being regulated on the basis of the analysis results.

Abstract: In a process for the combinatorial production of a library of materials in the form of a two-dimensional matrix in the surface region of a planar substrate by sputtering, the planar target used for the sputtering is arranged in parallel to the planar substrate and has surface regions of different chemical composition.

Abstract: A vacuum treatment system has a vacuum treatment chamber, has an ACTUAL value sensor to establish a treatment atmosphere in the form of a regulating element of a control circuit. The treatment atmosphere in the treatment area is modulated according to a defined profile as a function of the workpiece carrier position. The system and process deposits defined layer thickness distribution profiles on substrates in a reactive coating.

Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.

Abstract: An apparatus and method for measuring the erosion profile of a metallic target in a sputtering device is provided by inserting a thin sensor into a gap between the target and a substrate pedestal. The sensor is configured to emit an energy beam toward the surface of the target and to detect a reflection of the energy beam. The sensor may comprise a source element configured to emit a collimated light beam and a plurality of detectors arranged in a linear array. The sensor may also comprise optical fibers configured to reduce the size of the sensor. The detectors are positioned relative to the source element so that one of the detectors in the array will be illuminated by a reflection of the collimated light beam. The distance from the sensor to the target may be derived from the position of the detector illuminated by the reflected beam.

Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.

Abstract: The present invention relates to a method for determining a critical size for a diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an Al2O3 inclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an Al2O3 inclusion (38) can be determined based upon the thickness of the sheath. More specifically, the diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.

Abstract: The invention relates to a device for coating an object at a high temperature by means of cathode sputtering, having a vacuum chamber and a sputter source, the sputter source having a sputtering cathode. Inside the vacuum chamber is arranged an inner chamber formed from a heat-resistant material, which completely surrounds the sputtering cathode and the object to be coated, at a small spacing, and which has at least one opening to let a gas in and at least one opening to let a gas out.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as nickel and cobalt, for example, and its method of use, in which self-ionized plasma (SIP) sputtering is promoted. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. One embodiment of the present inventions is directed to sputter depositing a metal layer by biasing a sputter target with pulsed power in which the power applied to the target alternates between low and high levels. The high levels are, in one embodiment, sufficiently high to maintain a plasma for ionizing deposition material. The low levels are, in one embodiment, sufficiently low such that the power applied to the target during the high and low levels is, on average, low enough to facilitate deposition of thin layers if desired.

Abstract: The invention embodies a method and apparatus for controlling the thickness of a dielectric film formed by physical vapor deposition (PVD). The method compensates for the continuously varying electrical load conditions inherent in dielectric deposition via PVD. The method can be implemented through three different stages. Initially, the system power supply can be configured to operate in either constant current or constant voltage mode, herein referred to as constant supply parameter mode. Next, a gas composition which minimizes excursions in system impedance under these conditions is empirically determined. Finally, a test deposition can be performed using the constant parameter power supply mode and the gas mixture. This deposition is performed while tracking and summing the energy delivered to the system. The thickness of the deposited film is subsequently measured, and from these data a thickness-per-unit-energy relationship is determined.

Abstract: A process gas source (16) is connected to the vacuum chamber (5), and a metering valve (12) actuated by an automatic controller is installed between the vacuum chamber (5) and the process gas source (16). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber (5) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit (14), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.

Abstract: Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract: An apparatus and technique are provided for generating a plasma using a power supply circuit and arc detection arrangement. The power supply circuit has a cathode enclosed in a chamber, and is adapted to generate a power-related parameter. The arc detection arrangement is communicatively coupled to the power supply circuit and adapted to assess the severity of arcing in the chamber by comparing the power-related parameter to at least one threshold. According to various implementations, arc occurrences, arcing duration, intensity and/or energy are measured responsive to comparing the power-related parameter to the at least one threshold. According to further implementations, the above-mentioned measured quantities are accumulated and/or further processed.

Abstract: The present invention generally provides a physical vapor deposition chamber and a method for detecting a position of a shutter disk within a physical vapor deposition chamber. In one embodiment, a physical vapor deposition chamber includes a chamber body having a shutter disk mechanism disposed therein. A housing is sealingly coupled to a sidewall of the chamber body and communicates therewith through a slot formed through the sidewall. At least a first sensor is disposed adjacent to the housing and orientated to detect the presence of a shutter disk mechanism within the housing. In one embodiment, a method for detecting the position of a shutter disk within a physical vapor deposition chamber having a substrate support generally includes moving the shutter disk away from a substrate support, and changing a state of a first sensor in response to a position of an edge the shutter disk.

Abstract: A method for improving a performance of a sputtering target in a magnetron sputtering system having at least one magnet repetitively and retracingly scanning between two sides thereof and receiving a power input changing with a scanning position of the magnet is provided. The method includes the steps of stepwise reducing the power input while the magnet approaches a specific distance range near a retracing point, so as to reduce an erosion rate of the sputtering target by the magnetron sputtering system, and increasing the power input to a specific value while the magnet leaves the specific distance range, wherein the power input changes with the scanning position of the magnet, so as to improve the performance of the sputtering target.

Abstract: A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a controller configured to selectively vary the target-cathode voltage and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage.

Abstract: A magnetic assembly (15) is mounted on a lead screw (12) on one side of a spunter target (14). A further lead screw (11) carries a counter weight (16). The lead screws can be rotated by a stepper motor (13) to adjust the lateral positions of assembly (15) and weight (16). The stepper motor and hence the assembly (15), can be rotated about a vertical axis by shaft (17) and motor (18) so that a magnetic field can be swept around the target (14). The position of the assembly (15) is varied in accordance with a process characteristic.

Abstract: A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.

Abstract: Apparatus comprising G-protein coupled receptor (GPCR) for detecting ligands or substances in liquid or vapor media. The GPCR is based on in a cell or in a synthetic membrane or polymer system, and combined with means for obtaining a sample of a liquid or vapor medium, and with automatic optical detection system and monitoring system for detecting a ligand of interest. Methods are disclosed for detecting a ligand of interest using the GPCR apparatus.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

Abstract: A preferred sputter target assembly (10, 10′) comprises a target (12, 12′), a backing plate (14, 14′) bonded to the target (12, 12′) along an interface (22, 22′) and dielectric particles (20, 20′) between the target (12, 12′) and the backing plate (14, 14′). A preferred method for manufacturing the sputter target assembly (10, 10′) comprises the steps of providing the target (12, 12′) and the backing plate (14, 14′); distributing the dielectric particles (20, 20′) between mating surfaces (24, 26) of the target (12, 12′) and the backing plate (14, 14′), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12′) to the backing plate (14, 14′) along the mating surfaces (24, 26).

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition process are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: Systems and methods of monitoring thin film deposition are described. In one aspect, a thin film deposition sensor includes an acoustical resonator (e.g., a thin film bulk acoustical resonator) that has an exposed surface and is responsive to thin film material deposits on the exposed surface. A substrate clip may be configured to attach the thin film deposition sensor to a substrate. A transceiver circuit may be configured to enable the thin film deposition sensor to be interrogated wirelessly. A method of monitoring a thin film deposition on a substrate also is described.

Abstract: A method and system for determining a source flux modulation recipe for achieving a selected thickness profile of a film to be deposited (e.g., with highly uniform or highly accurate custom graded thickness) over a flat or curved substrate (such as concave or convex optics) by exposing the substrate to a vapor deposition source operated with time-varying flux distribution as a function of time. Preferably, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time.

Abstract: The invention includes methods of forming a non-volatile resistance variable device and methods of forming a metal layer comprising silver and tungsten. A method of forming a non-volatile resistance variable device includes forming a chalcogenide material over a semiconductor substrate. First and second electrodes are formed operably proximate the chalcogenide material. At least one of the first and second electrodes includes a metal layer having silver and tungsten. The metal layer is formed by providing the substrate within a sputter deposition chamber. One or more target(s) is/are provided within the chamber which include(s) at least tungsten and silver. The one or more target(s) is/are sputtered using a sputtering gas comprising at least one of Xe, Kr and Rn under conditions effective to deposit the metal layer onto the substrate. The metal layer can be fabricated independent of fabrication of a non-volatile resistance variable device.

Abstract: A method of inspecting the surface finish of a component comprising providing an original surface to be inspected. A release agent is applied onto the original surface and an epoxy mixture is applied over the release agent. The epoxy mixture is allowed to harden into a replicated surface. Once the epoxy mixture has hardened, the replicated surface is removed and a metallic coating is applied thereon. The coated replicated surface is then ready for inspection.

Abstract: A method of inspecting the surface finish of a component comprising providing an original surface to be inspected. A release agent is applied onto the original surface and an epoxy mixture is applied over the release agent. The epoxy mixture is allowed to harden into a replicated surface. Once the epoxy mixture has hardened, the replicated surface is removed and a metallic coating is applied thereon. The coated replicated surface is then ready for inspection.

Abstract: A method and apparatus for depositing a film on a substrate comprising a deposition interval wherein DC power is applied to a target to form a first plasma and material is sputtered from the target onto a substrate and, during a subsequent forming interval, high frequency power is applied to the target to remove material from at least a portion of the substrate. The sputtering working gas admitted to the chamber may be maintained at a first pressure during the deposition interval and the pressure of the sputtering working gas may be increased to a second pressure during the forming interval.

Abstract: An apparatus and technique are provided for generating a plasma using a power supply circuit and arc detection arrangement. The power supply circuit has a cathode enclosed in a chamber, and is adapted to generate a power-related parameter. The arc detection arrangement is communicatively coupled to the power supply circuit and adapted to assess the severity of arcing in the chamber by comparing the power-related parameter to at least one threshold. According to various implementations, arc occurrences, arcing duration, intensity and/or energy are measured responsive to comparing the power-related parameter to the at least one threshold. According to further implementations, the above-mentioned measured quantities are accumulated and/or further processed.

Abstract: A method of adjusting plasma processing of a substrate in a plasma reactor having an electrode assembly. The method includes the steps of positioning the substrate in the plasma reactor, creating a plasma in the plasma reactor, monitoring optical emissions emanating from a plurality of different regions of the plasma in a direction substantially parallel to the surface of the substrate during plasma processing of the substrate, and determining an integrated power spectrum for each of the different plasma regions and comparing each of the integrated power spectra to a predetermined value. One aspect of the method includes utilizing an electrode assembly having a plurality of electrode segments and adjusting RF power delivered to the one or more electrode segments based on differences in the integrated power spectra from the predetermined value.

Abstract: A method for forming an optical thin film having multiple optical layers on the surface of a substrate using a magnetron sputtering apparatus with a sputtering chamber having cathodes, the substrate, and at least two kinds of targets disposed therein. An inert gas and a reactive gas are introduced into the sputtering chamber to form at least some of the multiple optical layers on the substrate by successively alternately repeatedly forming at least two kinds of optical layers each having a different optical constant by means of the reactive magnetron sputtering apparatus under a condition of a discharge pressure being no greater than 1.3×10−1 Pa.

Abstract: Uniformity of a sputtered conductive barrier layer (50) or seed layer (52) across a semiconductor substrate (18, 42) is improved by incorporating a plurality of electromagnets (26) in or around the sputtering chamber (14) which can be independently powered. In other words, each individual electromagnet can be turned on or off, and/or the amount of power being supplied to each electromagnet (and thus the magnetic field generated by each electromagnet) can be varied independently. Further, the sputtering system (10) includes connection to a computer (30) that is either integral to or connected to a metrology tool (28). The metrology tool measures uniformity of a layer deposited by the sputtering system, analyzes the measurements and feeds back information to the sputtering system as to how to vary the power being supplied to the plurality of electromagnets to improve layer uniformity.

Abstract: A method of constructing increased life sputter targets and targets made by the method are disclosed. The method comprises starting with a precursor target design or profile and making magnetic field strength measurements along the radial surface of same and at a plurality of vertical dimensions above the surface. An optimal magnetic field strength ratio is provided between the erosion tracks of the target. The vertical dimension of the material to be added to one of the erosion tracks is determined and then the height of the other erosion track is calculated by utilizing this optimal magnetic field strength ratio.

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition process are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: A method and apparatus for producing a substrate which is coated with a Mgo-layer, includes a pair of Mg targets which define a slit and which have a target purity of at least 99 percent. A working gas flows along the slit. Oxygen is provided in an area between the slit and the substrate to be coated. The temperature of the substrate is set by heating or cooling the substrate during the coating process.

Abstract: A method and apparatus for fabricating a wafer spacing mask and a substrate support chuck. Such apparatus is a stencil containing a plurality of dual counterbored apertures that is positioned atop the substrate support chuck while material is deposited onto the stencil and through the apertures' openings onto the chuck. Upon completion of the deposition process, the stencil is removed from the workpiece support chuck leaving deposits of the material of various widths but the same heights to form the wafer spacing mask.

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Abstract: Uniformity of a sputtered conductive barrier layer (50) or seed layer (52) across a semiconductor substrate (18, 42) is improved by incorporating a plurality of electromagnets (26) in or around the sputtering chamber (14) which can be independently powered. In other words, each individual electromagnet can be turned on or off, and/or the amount of power being supplied to each electromagnet (and thus the magnetic field generated by each electromagnet) can be varied independently. Further, the sputtering system (10) includes connection to a computer (30) that is either integral to or connected to a metrology tool (28). The metrology tool measures uniformity of a layer deposited by the sputtering system, analyzes the measurements and feeds back information to the sputtering system as to how to vary the power being supplied to the plurality of electromagnets to improve layer uniformity.

Abstract: A first target is arranged opposite a substrate while a second target is arranged not opposite the substrate within a vacuum chamber. Pressure within the vacuum chamber is adjusted to a first pressure, and during a period wherein the pressure is changed from the first pressure to a second pressure which is lower than the first pressure, plasma density above the second target is made greater than plasma density above the first target. At a time point when the second pressure is reached, the plasma density above the first target is made greater than the plasma density above the second target.

Abstract: The invention concerns a sputter target on a metal or metal alloy base with a melting point of not more than 750° C., especially tellurium alloy, with a microstructure of powder particles compacted by means of powder metallurgy, where the primary microstructure of the powder particles is very fine as compared with their size and where the particle size is clearly greater than the grain size of the primary microstructure.

Abstract: A system and method for controlling a deposition thickness distribution over a substrate. A motor rotates the substrate, and at least one sensor senses the deposition thickness of the substrate at two or more radii on the substrate. An actuator varies a shadow of a mask disposed over a target used to sputter material on the substrate. An ion source generates an ion beam that is directed toward the target. The mask is positioned between the ion source and the target, and selectively blocks ion current from the ion source from reaching the target. A process controller is coupled to the deposition thickness sensor and the actuator. In response to the sensed deposition thickness, the process controller varies the shadow of the mask with respect to the target to control the deposition thickness distribution over the substrate.

Abstract: The present invention is directed to a method of controlling the formation of metal layers. In one illustrative embodiment, the method comprises depositing a layer of metal above a structure, irradiating at least one area of the layer of metal, and analyzing an x-ray spectrum of x-rays leaving the irradiated area to determine a thickness of the layer of metal. In further embodiments of the present invention, a plurality of areas, and in some cases at least five areas, of the layer of metal are irradiated. The layer of metal may be comprised of, for example, titanium, cobalt, nickel, copper, tantalum, etc.