Measuring Or Testing (e.g., Of Operating Parameters, End Point Determination, Etc.) Patents (Class 204/192.33)
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Publication number: 20100243431Abstract: An ion radiation damage prediction method includes a parameter computation step of computing the collision position and the incidence angle of an incident ion hitting a fabricated object by considering a transport path of the ion and by adopting the Monte Carlo method which takes distributions of flux quantities, incidence energies and angles of incident ions as input parameters; and a defect-distribution computation step of searching for data by referring to information found at the parameter computation step and databases created in advance, the databases storing distributions of quantities of crystalline defects having an effect on the fabricated object, ion reflection probabilities and ion penetration depths, finding the penetration depth and location of the incident ion based on the data found in the search operation, and the incidence energy and angle of the incident ion, and computing a distribution of defects in the fabricated object from the penetration depth and location.Type: ApplicationFiled: February 17, 2010Publication date: September 30, 2010Applicant: Sony CorporationInventors: Nobuyuki Kuboi, Shoji Kobayashi
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Patent number: 7803280Abstract: The invention provides a method in which waviness generated on a glass substrate surface during pre-polishing is removed, thereby finishing the glass substrate to have a surface excellent in flatness. The method for finishing a pre-polished glass substrate uses ion beam etching, gas cluster ion beam etching or plasma etching, the method including: a step of measuring flatness of the glass substrate surface using a shape measurement unit, and a step of measuring a concentration distribution of the dopant contained in the glass substrate. Processing conditions of the glass substrate surface are set up for each site of the glass substrate based on the results obtained from the step of measuring flatness and the step of measuring a concentration distribution of the dopant. Finishing includes keeping an angle formed by a normal line of the glass substrate and an incident beam onto the glass substrate at from 30° to 89°.Type: GrantFiled: June 1, 2009Date of Patent: September 28, 2010Assignee: Asahi Glass Company, LimitedInventors: Koji Otsuka, Kenji Okamura
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Patent number: 7788798Abstract: A method for manufacturing a magnetic write head having a wrap around magnetic shield. The method allows a highly accurate short wavelength such as 193 mm photolithography to be used to accurately define the placement and critical dimension of wrap around magnetic shield. The method includes the formation of a magnetic write pole, top gap, and side gap and the deposition of a RIEable fill layer thereover, and CMP to planarization. A 193 nm photolithography and ion milling is used to form a mask over the RIEable layer and one or more reactive ion etching processes are performed to pattern the RIEable layer through 193 nm photolithography mask. A wrap around shield can then be electroplated into the opening formed in the RIEable layer.Type: GrantFiled: November 21, 2007Date of Patent: September 7, 2010Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Hung-Chin Guthrie, Ming Jiang, Changqing Shi, Sue Siyang Zhang
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Patent number: 7771603Abstract: A process for polishing a glass substrate, which enables to polish a glass substrate having a large waviness formed by mechanical polishing, to have a surface excellent in flatness, is provided. A process for polishing a glass substrate, comprising a step of measuring the surface profile of a mechanically polished glass substrate to identify the width of waviness present in the glass substrate, and a step of applying dry etching using a beam having a beam size in FWHM (full width of half maximum) value of at most the above size of waviness, to polish the surface of the glass substrate.Type: GrantFiled: July 18, 2007Date of Patent: August 10, 2010Assignee: Asahi Glass Company, LimitedInventors: Koji Otsuka, Masabumi Ito, Hiroshi Kojima
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Patent number: 7744735Abstract: An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.Type: GrantFiled: March 5, 2004Date of Patent: June 29, 2010Assignee: Tokyo Electron LimitedInventors: Rodney Lee Robison, Jacques Faguet, Bruce Gittleman, Tugrul Yasar, Frank Cerio, Jozef Brcka
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Publication number: 20100101940Abstract: An object of the invention is to provide a method for removing foreign matter from a glass substrate surface to be finish-processed by a method accompanied with beam irradiation or laser light irradiation on the glass substrate surface. The present invention relates to a method for removing foreign matter from a glass substrate surface, which includes subjecting the glass substrate surface to gas cluster ion beam etching at an accelerating voltage of from 5 to 15 keV.Type: ApplicationFiled: December 29, 2009Publication date: April 29, 2010Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Masabumi Ito, Kenji Okamura, Hiroshi Kojima
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Publication number: 20090233192Abstract: The invention is to provide a method in which waviness generated on a glass substrate surface during pre-polishing is removed, thereby finishing the glass substrate so as to have a surface excellent in flatness.Type: ApplicationFiled: June 1, 2009Publication date: September 17, 2009Applicant: ASAHI GLASS COMPANY LIMITEDInventors: Koji Otsuka, Kenji Okamura
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Patent number: 7569123Abstract: In one embodiment, the erosion profile of a shaped target (e.g., hollow cathode target) of a magnetron apparatus is enhanced by using a plurality of sputtering tracks, such as plasma loops, on the target. The erosion profile may be optimized by recording the erosion profile and making adjustments to the magnetic configuration of the magnetron. The recording may include two-dimensional plots of erosion/redepostion rates or a grid overlay tracing of a static burn test, for example. The magnetic configuration of the magnetron may include a rotating magnetic array. The rotating magnetic array may be adjusted to change the shape or location of the plurality of plasma loops to achieve an optimum erosion profile. The target may have a flared lip to increase erosion on the lip, if needed.Type: GrantFiled: May 25, 2004Date of Patent: August 4, 2009Assignee: Novellus Systems, Inc.Inventors: Daniel R. Juliano, Douglas B. Hayden
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Publication number: 20090084672Abstract: A method and system of location specific processing on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB) according to a set of beam properties and measuring metrology data for a substrate. Thereafter, the method comprises determining at least one spatial gradient of the metrology data at one or more locations on the substrate and adjusting at least one beam property in the set of beam properties for the GCIB according to the determined at least one spatial gradient. Using the metrology data and the adjusted set of beam properties, correction data for the substrate is computed. Following the computing, the adjusted GCIB is applied to the substrate according to the correction data.Type: ApplicationFiled: September 28, 2007Publication date: April 2, 2009Applicants: TOKYO ELECTRON LIMITED, TEL Epion Inc.Inventors: Ruairidh MacCRIMMON, Nicolaus J. Hofmeester, Steven P. Caliendo
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Patent number: 7509729Abstract: A method for making a write pole in a perpendicular magnetic recording write head uses a metal mask to pattern the primary resist and only ion milling during the subsequent patterning steps. A layer of primary resist is deposited over the magnetic write pole material and a metal mask layer is deposited on the primary resist layer. An imaging resist layer is formed on the metal mask layer and lithographically patterned generally in the desired shape of the write pole. Ion milling without a reactive gas is then performed over the imaging resist pattern to pattern the underlying metal mask layer, which is then used as the mask to define the shape of the primary resist pattern. Ion milling with oxygen is then performed over the metal mask pattern to pattern the underlying primary resist. Ion milling without a reactive gas is then performed over the primary resist pattern to form the underlying write pole.Type: GrantFiled: April 25, 2006Date of Patent: March 31, 2009Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Donald G. Allen, Amanda Baer, Michael Feldbaum, Hung-Chin Guthrie, Aron Pentek
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Patent number: 7476302Abstract: An apparatus and method to deposit a MgO film on a large substrate area. The method includes applying a voltage to one or more magnesium targets; applying an electric current to the one or more magnesium targets when the voltage stops increasing so that a power with a negative square wave, which does not cause mutual interfere, is applied to the one or more magnesium targets; and forming a MgO film on a substrate using magnesium particles emitted from the one or more magnesium targets by the power applied.Type: GrantFiled: March 30, 2004Date of Patent: January 13, 2009Assignee: Korea Electrotechnology Research InstituteInventors: Young Wook Choi, Jee Hyun Kim
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Patent number: 7378003Abstract: A focused particle beam system, according to one embodiment of the invention, precisely shapes a pole-tip assembly formed by a multi-layer device having a first layer with a first structural element, a second layer with a second structural element, and a shielding layer with a shielding element, the shielding element being located between the first layer and the second layer. The focused particle beam system mills the second structural element without irradiating a first structural element. The system images a selected portion of the multi-layer device to locate the shielding element and thereby avoids irradiating the first structural element. The shielding element separates the first structural element from the second structural element. Based on the location of the shielding element, the system images and mills the second structural element without irradiating the first structural element.Type: GrantFiled: November 30, 2004Date of Patent: May 27, 2008Assignee: FEI CompanyInventors: Gregory J. Athas, Russel Mello
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Patent number: 7316764Abstract: A system and method for performing sputter etching includes an ion source that generates an ion current that is directed at a substrate and an electron source that generates an electron current directed at the substrate. Biasing circuitry biases the substrate with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from a positive voltage source with respect to ground, a negative voltage source with respect to ground and a high frequency switch. At least one current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the substrate during one or more cycles of the a-symmetric bi-polar DC voltage pulse signal. A control system, coupled to the at least one current sensor, varies the ion current independently from the electron current. The ion and electron sources create a continuous plasma that is proximate the substrate and the biasing circuitry causes the substrate to alternatively attract ions and electrons from the plasma.Type: GrantFiled: March 29, 2004Date of Patent: January 8, 2008Assignee: 4 Wave, Inc.Inventors: David Alan Baldwin, Todd Lanier Hylton
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Patent number: 7313854Abstract: A method of manufacturing a tactile sensor, which is capable of implementing a wide range of senses, including sensing contact pressure (vertical force and horizontal force) with an external object and heat caused by the contact pressure, comprises forming a side block formation pattern of a force sensor and forming a piezo-resistor formation pattern of a heat sensor; forming a piezo-resistor and depositing an oxide film on the piezo-resistor; forming contact holes and forming a line hole formation pattern; forming a metal line, a temperature measurement metal line, and a heater; depositing an oxide film on the metal line, the temperature measurement metal line, and the heater, and forming a load block on the oxide film; and forming a side block by etching a bottom surface of the wafer on which the load block is formed.Type: GrantFiled: December 28, 2004Date of Patent: January 1, 2008Assignee: Korea Research Institute of Standards and ScienceInventors: Jong-ho Kim, Dae-im Kang, Yon-kyu Park, Min-seok Kim
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Patent number: 7306696Abstract: In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.Type: GrantFiled: November 1, 2002Date of Patent: December 11, 2007Assignee: Applied Materials, Inc.Inventors: Lei Lian, Matthew F. Davis
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Patent number: 7241397Abstract: An optical window deposition shield including a backing plate having a through hole, and a honeycomb structure having a plurality of adjacent cells configured to allow optical viewing through the honeycomb structure. Each cell of the honeycomb structure has an aspect ratio of length to diameter sufficient to impede a processing plasma from traveling through the full length of the cell. A coupling device configured to couple the honeycomb core structure to the backing plate such that the honeycomb structure is aligned with at least a portion of the through hole in the backing plate. The optical window deposition shield shields the optical viewing window of a plasma processing apparatus from contact with the plasma.Type: GrantFiled: March 30, 2004Date of Patent: July 10, 2007Assignee: Tokyo Electron LimitedInventors: Steven T. Fink, Andrej S. Mitrovic, Paula A. Calabrese
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Patent number: 7213322Abstract: A piezoelectric substrate is provided with interdigital transducer electrodes including a first electrode layer, a second electrode layer, and a third electrode layer that is principally made of aluminum. The piezoelectric substrate has a stepped structure on the surface of the piezoelectric substrate, the stepped structure including terraces each having a width of about 50 nm or less and steps each having a width of a mono-molecular layer (e.g., about 14 ?).Type: GrantFiled: March 3, 2004Date of Patent: May 8, 2007Assignee: Murata Manufacturing Co., Ltd.Inventors: Osamu Nakagawara, Akinori Shinoda
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Patent number: 7172675Abstract: An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processing room and a magnetic pole pair having two different magnetic poles disposed opposite each other with the hole interposed therebetween. The magnetic pole pair is configured to have a sufficient magnetic field strength to prevent electrons which form a plasma in the processing room from reaching the transparent member through the hole.Type: GrantFiled: December 23, 2003Date of Patent: February 6, 2007Assignee: Tokyo Electron LimitedInventor: Masayuki Tomoyasu
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Patent number: 7160475Abstract: The present disclosure relates to a method for generating a three-dimensional microstructure in an object. In one embodiment, a method for fabricating a microscopic three-dimensional structure is provided. A work piece is provided that includes a target area at which the three-dimensional structure is to be fabricated. The target area has a plurality of virtual dwell points. A shaped beam is provided to project onto the work piece. The intersection of the shaped beam with the work piece defines a beam incidence region that has a desired shape. The beam incidence region is sufficiently large to encompass multiple ones of the virtual dwell points. The shaped beam is moved across the work piece such that different ones of the virtual dwell points come into it and leave it as the beam moves across the work piece thereby providing different doses to different ones of the virtual dwell points as the different dwell points remain in the beam incidence region for different lengths of time during the beam scan.Type: GrantFiled: November 21, 2002Date of Patent: January 9, 2007Assignee: FEI CompanyInventor: Lawrence Scipioni
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Patent number: 7159302Abstract: A method for manufacturing a write head having a small write pole tip that emits magnetic flux sufficient for effective perpendicular recording. The method creates a leading edge taper (LET) between the write pole tip and a magnetic flux guide to create a sufficient magnetic flux in the write pole. The LET is fabricated by ion milling away a sacrificial striated material whose layers have different rates of ion milling. The top layer of material thus mills away faster than lower layers, creating the required tapering of a negative mold. An endpoint material stops the milling. The LET magnetic material is then spattered into the negative mold, resulting in a well defined taper of magnetic flux shaping material extending the magnetic flux guide to the write pole tip, such that the write pole tip is able to emit sufficient magnetic flux for perpendicular recording.Type: GrantFiled: March 31, 2004Date of Patent: January 9, 2007Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Michael Feldbaum, Quang Le
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Patent number: 7152305Abstract: A magnetoresistive (MR) read head is disclosed including a shield layer with a recessed portion and a protruding portion defined by the recessed portion. Also included is an MR sensor located in vertical alignment with the protruding portion of the shield layer. Further provided is at least one gap layer situated above and below the MR sensor. At least one of such gap layers is positioned in the recessed portion of the shield layer. By this design, a combined thickness of the gap layers is thinner adjacent to the MR sensor and the protruding portion of the shield layer, while being thicker adjacent to the recessed portion of the shield layer. As such, optimum insulation is provided while maintaining planar gap layer surfaces to avoid the detrimental ramifications of reflective notching and the swing curve effect.Type: GrantFiled: June 19, 2003Date of Patent: December 26, 2006Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventor: Douglas Werner
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Patent number: 7147748Abstract: A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.Type: GrantFiled: February 18, 2004Date of Patent: December 12, 2006Assignee: Hitachi High-Technologies CorporationInventors: Go Miya, Hiroyuki Kitsunai, Junichi Tanaka, Toshio Masuda, Hideyuki Yamamoto
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Patent number: 7147747Abstract: A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.Type: GrantFiled: March 4, 2003Date of Patent: December 12, 2006Assignee: Hitachi High-Technologies CorporationInventors: Go Miya, Hiroyuki Kitsunai, Junichi Tanaka, Toshio Masuda, Hideyuki Yamamoto
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Patent number: 7135123Abstract: The backside navigation method of the present invention includes milling a fiducial opening through the substrate of an integrated circuit. The milling process is stopped when the fiducial opening reaches the bottom of a trench isolation structure. The trench isolation structure delineated by the fiducial opening may be imaged and registered to a computer aided design layout image to achieve sub-micron navigation resolution.Type: GrantFiled: January 14, 2004Date of Patent: November 14, 2006Assignee: Credence Systems CorporationInventors: Mark Alan Thompson, Erwan Le Roy, Theodore Lundquist, William B. Thompson, Catherine Kardach
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Patent number: 7118657Abstract: For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.Type: GrantFiled: October 28, 2003Date of Patent: October 10, 2006Assignee: President and Fellows of Harvard CollegeInventors: Jene A. Golovchenko, Derek M. Stein, Jiali Li
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Patent number: 7101458Abstract: In a plasma processing method and apparatus for monitoring an operating status of a plasma processing apparatus and/or a processing status of an object being processed, emission spectra emitted from a plasma is obtained as optical data when the plasma process is performed on the object. Quantitative data of each emission source is obtained from the obtained optical data by using reference data in a database storing therein emission spectra of a plurality of emission source as the reference data. The operating status of the plasma processing apparatus and/or the processing status of the object being processed is estimated based on changes in the quantitative data of each emission source.Type: GrantFiled: December 5, 2003Date of Patent: September 5, 2006Assignee: Tokyo Electron LimitedInventors: Hin Oh, Yuichi Mimura
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Patent number: 7048837Abstract: Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window.Type: GrantFiled: September 11, 2003Date of Patent: May 23, 2006Assignee: Applied Materials, Inc.Inventors: Sasson R. Somekh, Marc O. Schweitzer, John C. Forster, Zheng Xu, Roderick C. Mosely, Barry L. Chin, Howard E. Grunes
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Patent number: 7025895Abstract: A plasma processing apparatus and method are capable of performing etching with high precision without damaging the semiconductor wafer. The plasma processing apparatus has a plasma generation power supply for generating a plasma within a processing chamber; a high-frequency power supply for applying a high frequency wave to a sample stage installed within the processing chamber; and control means for controlling the plasma generation power supply or the high-frequency power supply based on parameter settings for an output intensity and an output mode for each process step. In this regard, when the process steps are switched, the control means compares parameters for a current process step with those for a next process step and then switches either the output intensities or the output modes before switching the output modes or the output intensities, respectively.Type: GrantFiled: August 15, 2002Date of Patent: April 11, 2006Assignee: Hitachi High-Technologies CorporationInventors: Youji Takahashi, Makoto Kashibe
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Patent number: 7007374Abstract: A narrow track width read sensor having a high magnetoresistive sensitivity is made using a self-aligned process which requires the use of only a single resist mask. A plurality of sensor layers is deposited over a substrate. After forming a resist mask in the central region, first lead layers are deposited in the end regions and over the resist mask. Using the resist mask, ion milling is performed such that the first lead layers and sensor layers in the end regions are substantially removed but sensor layers in the central region remain, to thereby form a read sensor having lead overlays on the edges thereof. Hard bias and second lead layers are then deposited in the end regions and over the resist mask. After the resist mask is removed, the top of the read sensor may be oxidized through an exposure to oxygen plasma.Type: GrantFiled: August 9, 2002Date of Patent: March 7, 2006Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventor: Jeffrey Scott Lille
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Patent number: 6979389Abstract: An apparatus and method of machining sliders to obtain the optimum PTR for each slider. An array of MEMS devices configured for angular actuation are provided, and a slider is placed in each MEMS device of the array. The ion milling of the sliders is controlled individually for each slider based on the relationship of the ion angle and relative etch rates of the slider components. The MEMS devices are controlled to ensure the ion incidence angle for each slider is such that the desired PTR of each slider is achieved.Type: GrantFiled: June 30, 2003Date of Patent: December 27, 2005Assignee: Seagate Technology LLCInventors: Shanlin Hao, Roger Lee Hipwell, Jr.
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Patent number: 6958248Abstract: A method and system for registering a CAD layout to a Focused Ion Beam image for through-the substrate probing, without using an optical image and without requiring biasing, includes an improved method of trench endpointing during the FIB milling operation with a low beam energy. The method further includes removal of Ga at the trench floor using XeF2, as well as the deposition of an insulating layer onto the trench floor.Type: GrantFiled: February 27, 2004Date of Patent: October 25, 2005Assignee: Credence Systems CorporationInventors: Erwan Le Roy, William B. Thompson
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Patent number: 6952014Abstract: A Focused Ion Beam (FIB) milling end-point detection system uses a constant current power supply to energize an Integrated Circuit (IC) that is to be modified. The FIB is cycled over a conductive trace that is to be accessed during the milling process. The input power, or voltage to the IC is monitored during the milling process. The end-point can be detected when the FIB reaches the conductive trace. The FIB can inject charge onto the conductive trace when the FIB reaches the level of the conductive trace. An active device coupled to the conductive trace can amplify the charge injected by the FIB. The active device can operate as a current amplifier. The change in IC current can result in an amplified change in device input voltage. The end-point can be detected by monitoring the change in input voltage from the constant current power supply.Type: GrantFiled: June 9, 2004Date of Patent: October 4, 2005Assignee: Qualcomm IncInventor: Alan Glen Street
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Patent number: 6933081Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.Type: GrantFiled: May 15, 2002Date of Patent: August 23, 2005Assignee: Micron Technology, Inc.Inventors: Baorui Yang, Matthew Lamantia
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Patent number: 6821377Abstract: A plasma etching apparatus for a semiconductor wafer generates plasma in a plasma generation space between a susceptor and a showerhead. A shield member is detachably disposed inside the sidewall of a process chamber to prevent reaction products from sticking to the sidewall. A window device is arranged to lead plasma light emitted from plasma out of the process chamber. The window device includes a quartz window plate airtightly attached to the sidewall of the process chamber. The window device also includes an aluminum light guide having a number of capillary through holes for guiding the plasma light to the window plate, and a sapphire cover plate disposed between the window plate and the light guide and covering the openings of the through holes. The light guide and the cover plate are attached to the shield member.Type: GrantFiled: March 11, 2003Date of Patent: November 23, 2004Assignee: Tokyo Electron LimitedInventors: Susumu Saito, Norikazu Sugiyama
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Publication number: 20040224238Abstract: A method for repairing a defective photomask having contained therein a minimum of one defect within a defective pattern employs a non-defective photomask for purposes of photoexposing a photoresist layer formed upon the defective photomask such as to form a patterned photoresist layer which leaves exposed the minimum of one defect. The minimum of one defect may then be repaired with the patterned photoresist layer in place as a repair mask. The method also provides for use of a non-defective pattern region within a defective photomask in a like fashion for repairing a defective pattern region within the same photomask. The method may be extended to repairing defective microelectronic products.Type: ApplicationFiled: May 8, 2003Publication date: November 11, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Cheng Chin, Shih-Ming Chang
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Patent number: 6813534Abstract: In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position.Type: GrantFiled: February 20, 2002Date of Patent: November 2, 2004Inventors: Zhifeng Sui, Paul E Luscher, Nils Johansson, Michael D Welch
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Patent number: 6810566Abstract: A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of the interdigital transducer and the piezoelectric body simultaneously so as to reduce the thickness of the interdigital transducer and the piezoelectric body.Type: GrantFiled: January 25, 2002Date of Patent: November 2, 2004Assignee: Murata Manufacturing Co., LtdInventors: Eiichi Takata, Yasuji Yamamoto, Toshimaro Yoneda, Michio Kadota
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Patent number: 6789297Abstract: A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of the interdigital transducer and the piezoelectric body simultaneously so as to reduce the thickness of the interdigital transducer and the piezoelectric body.Type: GrantFiled: January 25, 2002Date of Patent: September 14, 2004Assignee: Murata Manufacturing Co., LtdInventors: Eiichi Takata, Yasuji Yamamoto, Toshimaro Yoneda, Michio Kadota
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Patent number: 6783643Abstract: A solid state structure having a surface is provided and exposed to a flux, F, of incident ions under conditions that are selected based on: ∂ ∂ t ⁢ C ⁡ ( r , t ) = F ⁢ ⁢ Y 1 + D ⁢ ∇ 2 ⁢ C - C τ trap - F ⁢ ⁢ C ⁢ ⁢ &sigmType: GrantFiled: June 27, 2002Date of Patent: August 31, 2004Assignee: President and Fellows of Harvard CollegeInventors: Jene A. Golovchenko, Daniel Branton, Michael J. Aziz, Jiali Li, Derek M. Stein, Ciaran J. McMullan
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Patent number: 6736944Abstract: An apparatus and technique are provided for generating a plasma using a power supply circuit and arc detection arrangement. The power supply circuit has a cathode enclosed in a chamber, and is adapted to generate a power-related parameter. The arc detection arrangement is communicatively coupled to the power supply circuit and adapted to assess the severity of arcing in the chamber by comparing the power-related parameter to at least one threshold. According to various implementations, arc occurrences, arcing duration, intensity and/or energy are measured responsive to comparing the power-related parameter to the at least one threshold. According to further implementations, the above-mentioned measured quantities are accumulated and/or further processed.Type: GrantFiled: April 12, 2002Date of Patent: May 18, 2004Assignee: Schneider Automation Inc.Inventor: Paul R. Buda
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Patent number: 6726739Abstract: The present invention provides a pre-treatment apparatus for an analytical metal sample, the apparatus including (1) a treatment chamber having a sample charging port which can be opened and closed and provided at the top of the chamber, a sample discharging port which can be opened and closed and provided at the bottom of the chamber, and a gas inlet and gas outlet, (2) a sample carrying bar joined to a sample holder also used as a sputtering electrode, and provided to pass through at least one side wall of the treatment chamber so as to be substantially horizontally movable and axially rotatable, and (3) a sputtering counter electrode at least having portions arranged opposite to each other in a region not inhibiting the charge and discharge of an analytical metal sample so that the sample holder can be arranged in the counter electrode.Type: GrantFiled: July 24, 2002Date of Patent: April 27, 2004Assignees: JFE Steel Corporation, Japan Analyst Corporation, Ulvac-Phi IncorporatedInventors: Kenji Abiko, Hisao Yasuhara, Takashi Niida, Makoto Shimura, Hideo Iwai
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Patent number: 6695954Abstract: A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.Type: GrantFiled: October 11, 2001Date of Patent: February 24, 2004Assignee: Applied Materials, Inc.Inventor: Liubo Hong
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Publication number: 20030215721Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.Type: ApplicationFiled: May 15, 2002Publication date: November 20, 2003Inventors: Baorui Yang, Matthew Lamantia
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Patent number: 6643559Abstract: The invention relates to a method for monitoring a production process, whereby several models are used for detecting a finish point. The results of the model are subsequently compared with one another and the best model therefrom is used in other production processes to detect a finish point. The inventive method provides the advantage that process changes resulting from chamber contaminations or sensor drift are compensated for by selecting the best model, thereby ensuring reliable finish point detection even in case of unfavorable process conditions.Type: GrantFiled: February 12, 2002Date of Patent: November 4, 2003Assignee: Infineon Technologies AGInventor: Ferdinand Bell
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Patent number: 6641747Abstract: An apparatus and method for detecting an endpoint for an etching process utilize a reaction chamber with an ion source and detector placed within the reaction chamber. The ion source directs a primary beam of ions towards a wafer so that the ion beam impacts the top layer of the wafer. A detector detects primary ions reflected from the wafer and secondary ions scattered from the wafer. A value is determined that corresponds to the amount of reflected and scattered ions. A change in the value indicates that the ion beam is impacting a layer beneath the top layer of the wafer, and signifies the reaching of the etch process endpoint.Type: GrantFiled: February 15, 2001Date of Patent: November 4, 2003Assignee: Advanced Micro Devices, Inc.Inventors: Todd P. Lukanc, Ercan Adem
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Publication number: 20030136663Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.Type: ApplicationFiled: June 6, 2002Publication date: July 24, 2003Inventors: Michael Lane Smith, Joel O?apos;Don Stevenson, Pamela Peardon Denise Ward
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Patent number: 6585907Abstract: An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.Type: GrantFiled: April 23, 2001Date of Patent: July 1, 2003Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Hee Shin, Jin-Man Kim, Baik-Soon Choi, Hun Cha
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Publication number: 20030111337Abstract: An apparatus and a method for monitoring the ion concentration in an etching chamber of a sputter etch process are described, wherein the DC bias of a pre-clean process for a sputter etch process is acquired. The parameters of the pre-clean process for the sputter etch process are then adjusted according to the value of the monitored DC bias. The DC bias thus varies within a certain range to provide a steady control of the ion concentration and to reduce the defects formed in the wafer.Type: ApplicationFiled: April 3, 2002Publication date: June 19, 2003Inventors: Chien-Chia Lin, Shih-Liang Chou, Kuo-Wei Shyu
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Patent number: 6564439Abstract: A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of the interdigital transducer and the piezoelectric body simultaneously so as to reduce the thickness of the interdigital transducer and the piezoelectric body.Type: GrantFiled: April 10, 2000Date of Patent: May 20, 2003Assignee: Murata Manufacturing Co., Ltd.Inventors: Eiichi Takata, Yasuji Yamamoto, Toshimaro Yoneda, Michio Kadota
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Patent number: 6562186Abstract: A plasma etching apparatus for a semiconductor wafer generates plasma in a plasma generation space between a susceptor and a showerhead. A shield member is detachably disposed inside the sidewall of a process chamber to prevent reaction products from sticking to the sidewall. A window device is arranged to lead plasma light emitted from plasma out of the process chamber. The window device includes a quartz window plate airtightly attached to the sidewall of the process chamber. The window device also includes an aluminum light guide having a number of capillary through holes for guiding the plasma light to the window plate, and a sapphire cover plate disposed between the window plate and the light guide and covering the openings of the through holes. The light guide and the cover plate are attached to the shield member.Type: GrantFiled: February 27, 2001Date of Patent: May 13, 2003Assignee: Tokyo Electron LimitedInventors: Susumu Saito, Norikazu Sugiyama