Abstract: Methods for etching a trench into a dielectric layer are provided. One exemplary method controls an ion-to-neutral flux ratio during etching so as to achieve a neutral limited regime in an ion assisted etch mechanism where the neutral limited regime causes bottom rounding. The method includes modulating physical sputtering causing microtrenching to offset the bottom rounding so as to produce a substantially flat bottom trench profile. Some notable advantages of the discussed methods of etching a trench into a dielectric layer includes the ability to eliminate the intermediate etch stop layer. Elimination of the etch stop layer will decrease fabrication cost and process time. Additionally, the elimination of the intermediate stop layer will improve device performance.

Abstract: A system for monitoring and/or controlling an etch process associated with a dual damascene process via scatterometry based processing is provided. The system includes one or more light sources, each light source directing light to one or more features and/or gratings on a wafer. Light reflected from the features and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the etch results achieved at respective portions of the wafer. The measuring system provides etching related data to a processor that determines the desirability of the etching of the respective portions of the wafer. The system also includes one or more etching devices, each such device corresponding to a portion of the wafer and providing for the etching thereof. The processor produces a real time feed forward information to control the etch process, in particular, terminating the etch process when desired end points have been encountered.

Abstract: There is provided controlled fabrication of a solid state structural feature on a solid state structure by exposing the structure to a fabrication process environment the conditions of which are selected to produce a prespecified feature in the structure. A physical detection species is directed toward a designated structure location during process environment exposure of the structure, and the detection species is detected in a trajectory from traversal of the designated structure location, to indicate changing physical dimensions of the prespecified feature. The fabrication process environment is then controlled in response to the physical species detection to fabricate the structural feature.

Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber.

Abstract: A method of manufacturing workpieces, includes loading the workpieces into a treatment facility, surface treating the workpieces in at least one vacuum station of the facility grouped as a station batch and controlling at least the timing of the process by a freely programmable process controller unit. At least two stations operating each on workpiece batches can be grouped as respective station batches and be different with respect to number of workpieces. The workpieces can be transported to and from the grouped stations. An embodiment of vacuum treatment system for such a process includes at least one vacuum treatment station for workpieces grouped as a station batch. A transport system supplies the vacuum station with workpieces. A process controller unit has an output operationally connected to a drive arrangement for the transport system. The unit controls operating timing of the treatment system and is freely programmable.

Abstract: An arrangement is provided for collecting, measuring and analyzing at least two specific wavelengths of optical emissions produced while etching a semiconductor wafer in a plasma chamber to determine an optimal endpoint for the etching process. The arrangement includes a sensor for gathering optical emissions, an interface for converting the intensity of optical emissions into corresponding electrical signals, and a controller for determining an optimal endpoint based on the corresponding electrical signals for the two specific wavelengths and other predetermined threshold data.

Abstract: A gas purged viewport for endpoint detection in a gas phase processing chamber is provided which prevents contamination of an optical monitoring window by use of a purge gas flow. The purge gas purges the viewport and prevents deposition of byproducts and contaminants on the window which will adversely effect endpoint detection. The gas purge viewport includes a prechamber between the optically transparent window and the process chamber. The purge gas is passed through the prechamber and into the processing chamber to purge the window. The gas purge system may also be used to purge other parts such as sensors.

Abstract: A method is provided for forming a final second pole tip of a write head wherein the final second pole tip is bounded in part by a final top and final first and second side walls, the final first and second side walls being separated by a final track width at an air bearing surface (ABS). The method includes the steps of forming a preliminary second pole tip that is bounded in part by the final top and preliminary first and second side walls. The preliminary first and second side walls are separated by a preliminary width at the ABS that is wider than the final track width. Next, a non-magnetic sacrificial layer is formed on the final top of the preliminary second pole tip. Ion beam milling is then employed for milling the preliminary first and second side walls to form the final second pole tip with the final first and second side walls separated by the final track width with at least a portion of the sacrificial layer remaining on the final top of the final second pole tip.

Abstract: The end of a cleaning process of a vacuum workpiece processing chamber evacuated to a constant pressure vacuum condition is controlled. The chamber is cleaned by exciting a cleaning gas to a plasma state by a field including an electric component. The process is terminated in response to detection of a substantial decrease in the time rate of change of pressure in a foreline of a vacuum pump evacuating the chamber after the plasma electrical impedance has been stabilized. The substantial decrease signals that the chamber is clean. A horn in the chamber that excites the gas to a plasma is indicated as being clean when the plasma electrical impedance is stable. The indication of plasma impedance stabilization is derived by monitoring horn DC bias voltage, or one or both variable reactances of a matching network connected between the horn and an r.f. excitation source for the horn.

Abstract: An assembly for allowing stable power transmission into a plasma processing chamber comprising a dielectric member; and at least one material deposition support assembly secured to the dielectric member for receiving and supporting the deposition of materials during processing of a substrate and a chamber having a controlled environment and containing a plasma of a processing gas. A plasma reactor for processing substrates having a reactor chamber including a chamber sidewall and a dielectric window supported by the chamber sidewall. A plurality of deposition support members is coupled to an inside surface of the dielectric window for receiving and supporting a deposition of materials during processing of substrates. In an alternative embodiment of the invention, the plurality of deposition support members is connected to a liner assembly instead of to the dielectric window. The liner assembly is supported by the chamber sidewall.

Abstract: A homogeneous marker is formed, possibly by the adsorption of trace amounts of an ambient material such as carbon monoxide gas, at a surface of a deposited material when the plasma in momentarily interrupted during plasma enhanced chemical vapor deposition or other deposition processes involving the presence of a plasma. When the deposited material is etched, the resulting crystal dislocations or adsorbed gas is detected as a marker by optical emission spectroscopy techniques. The accuracy of an end point determination of the etching process can be increased by providing a sequence of such markers within the bulk or volume of the deposited material. The markers, being merely an interface such as a slight crystal dislocation in otherwise homogeneous material, do not affect the electrical, chemical or optical properties of the remainder of the predetermined deposited material and thus the homogeneity of the deposited material is not significantly affected.

Abstract: A process for altering surface properties of a mass of metal alloy solder comprising a first metal and a second metal. The process comprises exposing the mass to energized ions to preferentially sputter atoms of the first metal to form a surface layer ratio of first metal to second metal atoms that is less than the bulk ratio. The solder may be located on the surface of a substrate, wherein the process may further comprise masking the substrate to shield all but a selected area from the ion beam. The sputtering gas may comprises a reactive gas such as oxygen and the substrate may be an organic substrate. The process may further comprise simultaneously exposing the organic substrate to energized ions of the reactive gas to roughen the organic substrate surface.

Abstract: An improved method for specifying and reliably detecting endpoints in processes such as plasma etching, where the signal-to-noise ratio has been severely degraded due to factors such as “cloudy window” and low ratio of reactive surface area to non-reactive surface area. The improved method of the invention samples signals produced by photo sensitive equipment, digitally filters and cross-correlates the data, normalizes the data using an average normalization value, and provides further noise reduction through the use of three modes of endpoint specification and detection. The three modes of endpoint specification and detection require a pre-specified number of consecutive samples to exhibit a certain behavior before the endpoint is deemed detected and the process terminated as a result. The three modes of endpoint specification and detection also permit a very fine control of the etch time by permitting the user to adjust the specified endpoint by gradations of the sampling period.

Abstract: A process for the vacuum treatment of workpieces, includes loading the workpieces into a treatment facility, surface treating the workpieces in at least one vacuum station of the facility grouped as a station batch and controlling at least the timing of the process by a freely programmable process controller unit. At least two stations operating each on workpiece batches can be grouped as respective station batches and be different with respect to number of workpieces. The workpieces can be transported to and from the grouped stations. An embodiment of vacuum treatment system for such a process includes at least one vacuum treatment station for workpieces grouped as a station batch. A transport system supplies the vacuum station with workpieces. A process controller unit has an output operationally connected to a drive arrangement for the transport system. The unit controls operating timing of the treatment system and is freely programmable.

Abstract: A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.