Triode, Tetrode, Auxiliary Electrode Or Biased Workpiece Patents (Class 204/298.06)
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Publication number: 20130319854Abstract: Embodiments of substrate supports having a radio frequency (RF) return path are provided herein. In some embodiments, a substrate support may include a dielectric support body having a support surface to support a substrate thereon and an opposing second surface; a chucking electrode disposed within the support body proximate the support surface; and an RF return path electrode disposed on the second surface of the dielectric support body. In some embodiments, a substrate processing system may include a process chamber having an inner volume; a shield to separate the inner volume into a processing volume and a non-processing volume and extending toward a ceiling of the process chamber; and a substrate support disposed below the shield, wherein the substrate support is as described above.Type: ApplicationFiled: May 22, 2013Publication date: December 5, 2013Applicant: APPLIED MATERIALS, INC.Inventors: VIJAY D. PARKHE, RYAN HANSON
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Patent number: 8574410Abstract: A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 ?s.Type: GrantFiled: February 17, 2009Date of Patent: November 5, 2013Assignee: The Regents of the University of CaliforniaInventor: Andre Anders
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Publication number: 20130277206Abstract: The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an ?—Al2O3 substrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the ?—Al2O3 substrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the ?—Al2O3 substrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.Type: ApplicationFiled: June 17, 2013Publication date: October 24, 2013Inventors: Yoshiaki DAIGO, Keiji ISHIBASHI
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Publication number: 20130256125Abstract: Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.Type: ApplicationFiled: March 30, 2012Publication date: October 3, 2013Applicant: APPLIED MATERIALS, INC.Inventors: DONNY YOUNG, ALAN RITCHIE, UDAY PAI, MUHAMMAD RASHEED, KEITH A. MILLER
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Publication number: 20130248352Abstract: A method of sputter depositing dielectric thin films may comprise: providing a substrate on a substrate pedestal in a process chamber, the substrate being positioned facing a sputter target; simultaneously applying a first RF frequency from a first power supply and a second RF frequency from a second power supply to the sputter target; and forming a plasma in the process chamber between the substrate and the sputter target, for sputtering the target; wherein the first RF frequency is less than the second RF frequency, the first RF frequency is chosen to control the ion energy of the plasma and the second RF frequency is chosen to control the ion density of the plasma. The self-bias of surfaces within said process chamber may be selected; this is enabled by connecting a blocking capacitor between the substrate pedestal and ground.Type: ApplicationFiled: September 10, 2012Publication date: September 26, 2013Applicant: Applied Materials, Inc.Inventors: Chong Jiang, Byung-Sung Leo Kwak, Michael Stowell, Karl Armstrong
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Publication number: 20130237053Abstract: A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.Type: ApplicationFiled: September 26, 2011Publication date: September 12, 2013Applicant: Tokyo Electron LimitedInventors: Tadahiro Ishizaka, Takashi Sakuma, Tatsuo Hatano, Osamu Yokoyama, Atsushi Gomi, Chiaki Yasumuro, Toshihiko Fukushima, Hiroyuki Toshima, Masaya Kawamata, Yasushi Mizusawa, Takara Kato
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Publication number: 20130233701Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode.Type: ApplicationFiled: April 22, 2013Publication date: September 12, 2013Applicant: 4D-S, LTDInventor: Makoto Nagashima
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Publication number: 20130220802Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.Type: ApplicationFiled: April 10, 2013Publication date: August 29, 2013Applicant: OC OERLIKON BALZERS AGInventor: OC OERLIKON BALZERS AG
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Patent number: 8512530Abstract: A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber.Type: GrantFiled: October 27, 2010Date of Patent: August 20, 2013Assignee: Samsung Display Co., Ltd.Inventors: Heung-Yeol Na, Jong-Won Hong, Seok-Rak Chang, Ki-Yong Lee
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Patent number: 8491759Abstract: Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.Type: GrantFiled: October 20, 2010Date of Patent: July 23, 2013Assignee: COMET Technologies USA, Inc.Inventors: John A. Pipitone, Gerald E. Boston
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Patent number: 8486242Abstract: One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.Type: GrantFiled: October 18, 2010Date of Patent: July 16, 2013Assignee: Applied Materials, Inc.Inventor: Michael S. Cox
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Publication number: 20130161187Abstract: Provided is a substrate processing apparatus including an openable and closable lid and being capable of precisely controlling a gap between multiple shields. The substrate processing apparatus includes: an openable and closable lid provided on an opening of a chamber; a first shield provided on a surface of the lid at the chamber side and having an insertion hole; an insertion section fixed to the lid while inserted through the insertion hole, and configured to support the first shield in a manner movable within a predetermined distance; a restriction section provided on an end portion of the insertion section and configured to restrict the movement of the first shield; and biasing means configured to bias the first shield to a member provided inside the chamber when the lid is closed.Type: ApplicationFiled: December 4, 2012Publication date: June 27, 2013Applicant: Canon Anelva CorporationInventor: Canon Anelva Corporation
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Publication number: 20130153412Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.Type: ApplicationFiled: December 15, 2011Publication date: June 20, 2013Applicant: APPLIED MATERIALS, INC.Inventors: ALAN RITCHIE, DONNY YOUNG, KEITH A. MILLER, MUHAMMAD RASHEED, STEVE SANSONI, Uday Pai
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Publication number: 20130126333Abstract: A vacuum deposition system for forming a dense coating includes a substrate holder for holding a substrate having a substrate surface to be coated, a magnetic field generator, an optional electron source, an optional electron drain, and a deposition source. The magnetic field generator generates a magnetic field in which the substrate is at least partially immersed such that a component of the magnetic field is parallel to the substrate surface such that electrons are forced along a path that causes ionization in the vicinity of the substrate surface. The magnetic field strength at the substrate surface is between 5 and 1000 Gauss. The deposition source provides material to coat the substrate. The vacuum deposition system includes the optional electron source if the deposition source does not provide a source of electrons. A method for depositing a dense coating is also provided.Type: ApplicationFiled: November 22, 2011Publication date: May 23, 2013Applicant: VAPOR TECHNOLOGIES, INC.Inventor: Klaus Brondum
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Patent number: 8440061Abstract: A device for use with an RF generating source, a first electrode, a second electrode and an element. The RF generating source is operable to provide an RF signal to the first electrode and thereby create a potential between the first electrode and the second electrode. The device comprises a connecting portion and a current sink. The connecting portion is operable to electrically connect to one of the first electrode, the second electrode and an element. The current sink is in electrical connection with the connection portion and a path to ground. The current sink comprises a voltage threshold. The current sink is operable to conduct current from the connecting portion to ground when a voltage on the electrically connected one of the first electrode, the second electrode and the element is greater than the voltage threshold.Type: GrantFiled: July 20, 2009Date of Patent: May 14, 2013Assignee: Lam Research CorporationInventors: John C. Valcore, Jr., Ed Santos
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Patent number: 8398832Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.Type: GrantFiled: September 15, 2005Date of Patent: March 19, 2013Assignee: Applied Materials Inc.Inventors: Jaim Nulman, Sergio Edelstein, Mani Subramani, Zheng Xu, Howard E. Grunes, Avi Tepman, John C. Forster, Praburam Gopalraja
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Publication number: 20130062198Abstract: Work piece processing is performed by pulsed discharges between an anode (2) and a magnetron sputtering cathode (1) in solid-gas plasmas using a chamber (2) containing the work piece (7). A system (12) maintains a vacuum in the chamber and another system (14) provides sputtering and reactive gases. The pulses are produced in a plasma pulser circuit including the anode and the cathode, the discharges creating gas and partially ionized solid plasma blobs (3) moving or spreading from a region at a surface of the cathode towards the work piece and the anode. A pulsed current comprising biasing pulses arises between the second electrodes. Biasing discharges are produced between the anode and the work piece when said plasma blobs have spread to regions at the anode and at the work piece so that the pulsed current is the current of these biasing discharges.Type: ApplicationFiled: September 10, 2012Publication date: March 14, 2013Applicant: CemeCon AGInventor: Vladimir KOUZNETSOV
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Publication number: 20130056348Abstract: A vacuum coating apparatus and method comprising a vacuum chamber, at least one pair of opposing cathodes, a power supply adapted to supply an AC voltage to said opposing cathodes to operate them in a dual magnetron sputtering mode, wherein at least one further cathode for PVD coating is provided in said vacuum chamber, characterized in that the at least one further cathode is a magnetron cathode and a further power supply is provided in the form of a pulsed power supply or a DC power supply is provided which is connectable to the magnetron cathode or arc cathode.Type: ApplicationFiled: August 30, 2012Publication date: March 7, 2013Applicant: Hauzer Techno Coating BVInventors: Frank PAPA, Roel TIETEMA
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Publication number: 20130043128Abstract: The present invention aims at providing a sputtering system capable of efficiently generating high-density plasma near the surface of a sputter target and forming a film at a high rate. It also aims at providing a large-area sputtering system and a plasma processing system having a simple structure and allowing the sputter target to be easily attached/detached, maintained, or operated otherwise. The present invention provides a sputtering system in which an inductively-coupled antenna conductor plate is attached to a portion of a vacuum chamber, wherein: a sputter target plate is attached to the inductively-coupled antenna conductor on its plasma formation space side; one end of the antenna conductor is connected to a radio-frequency power source; and the other end is grounded through a capacitor. A plurality of antenna conductors may be provided to form a large-area sputtering system.Type: ApplicationFiled: March 8, 2011Publication date: February 21, 2013Applicant: EMD CORPORATIONInventors: Akinori Ebe, Masanori Watanabe
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Patent number: 8377269Abstract: There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.Type: GrantFiled: June 4, 2009Date of Patent: February 19, 2013Assignee: Ulvac, Inc.Inventors: Naoki Morimoto, Tomoyasu Kondo, Hideto Nagashima, Daisuke Mori, Akifumi Sano
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Patent number: 8349156Abstract: Disclosed invention uses a coaxial microwave antenna to enhance ionization in PVD or IPVD. The coaxial microwave antenna increases plasma density homogeneously adjacent to a sputtering cathode or target that is subjected to a power supply. The coaxial microwave source generates electromagnetic waves in a transverse electromagnetic (TEM) mode. The invention also uses a magnetron proximate the sputtering cathode or target to further enhance the sputtering. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency. The target comprises dielectric materials, metals, or semiconductors. The target also has a cross section being substantially symmetric about a central axis that the target rotates around. The target may have a substantially circular or annular a cross section.Type: GrantFiled: May 14, 2008Date of Patent: January 8, 2013Assignee: Applied Materials, Inc.Inventors: Michael W. Stowell, Richard Newcomb
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Patent number: 8298385Abstract: A method and an apparatus are provided in which non-directional and directional metal (e.g. Ni) deposition steps are performed in the same process chamber. A first plasma is formed for removing material from a target; a secondary plasma for increasing ion density in the material is formed in the interior of an annular electrode (e.g. a Ni ring) connected to an RF generator. Material is deposited non-directionally on the substrate in the absence of the secondary plasma and electrical biasing of the substrate, and deposited directionally when the secondary plasma is present and the substrate is electrically biased. Nickel silicide formed from the deposited metal has a lower gate polysilicon sheet resistance and may have a lower density of pipe defects than NiSi formed from metal deposited in a solely directional process, and has a lower source/drain contact resistance than NiSi formed from metal deposited in a solely non-directional process.Type: GrantFiled: March 13, 2008Date of Patent: October 30, 2012Assignee: International Business Machines CorporationInventors: Keith Kwong Hon Wong, Robert J. Purtell
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Publication number: 20120228125Abstract: A physical vapor deposition (PVD) system includes N coaxial coils arranged in a first plane parallel to a substrate-supporting surface of a pedestal in a chamber of a PVD system and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. Plasma is created in the chamber. A magnetic field well is created above a substrate by supplying N currents to the N coaxial coils, respectively, and M currents to the M coaxial coils, respectively. The N currents flow in a first direction in the N coaxial coils and the M second currents flow in a second direction in the M coaxial coils that is opposite to the first direction. A recessed feature on the substrate arranged on the pedestal is filled with a metal-containing material by PVD using at least one operation with high density plasma having a fractional ionization of metal greater than 30%.Type: ApplicationFiled: March 21, 2012Publication date: September 13, 2012Inventors: Liqi Wu, Ishtak Karim, Huatan Qiu, Kie-Jin Park, Chunming Zhou, Karthik Colinjivadi
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Patent number: 8262869Abstract: Work piece processing is performed by pulsed discharges between an anode (2) and a magnetron sputtering cathode (1) in solid-gas plasmas using a chamber (2) containing the work piece (7). A system (12) maintains a vacuum in the chamber and another system (14) provides sputtering and reactive gases. The pulses are produced in a plasma pulser circuit including the anode and the cathode, the discharges creating gas and partially ionized solid plasma blobs (3) moving or spreading from a region at a surface of the cathode towards the work piece and the anode. A potential is applied to the work piece so that a pulsed current comprising biasing pulses arises between the second electrodes. In particular biasing discharges are produced between the anode and the work piece when said plasma blobs have spread to regions at the anode and at the work piece so that the pulsed current is the current of these biasing discharges.Type: GrantFiled: July 9, 2004Date of Patent: September 11, 2012Assignee: Chemfilt Ionsputtering AktiebolagInventor: Vladimir Kouznetsov
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Patent number: 8221594Abstract: The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.Type: GrantFiled: September 16, 2010Date of Patent: July 17, 2012Assignee: Ulvac, Inc.Inventors: Yasuhiko Akamatsu, Kyuzo Nakamura, Motoshi Kobayashi, Junya Kiyota, Tomiyuki Yukawa, Masaki Takei, Yuuichi Oishi, Makoto Arai, Satoru Ishibashi
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Publication number: 20120152735Abstract: Composite nanoparticles can be produced by a processing apparatus comprising a source of charged, moving nanoparticles or a first material and a first size, apparatus for imposing a like potential in a region lying in the path of the nanoparticles, and a physical vapour deposition source of a second material directed toward the region, thereby to produce nanoparticles of a second and greater size being a composite of the first and second materials. The apparatus for imposing a like potential can comprise one or more conductive rings surrounding the path of the nanoparticles, each at a successively lower potential. The physical vapour deposition source can be one or more of a sputter target, or an evaporative source, or another PVD source. There can be a plurality of physical vapour deposition sources, thereby allowing a larger region in which the shell is deposited. All of the physical vapour deposition sources can deposit the same material, for a uniform shell.Type: ApplicationFiled: June 30, 2010Publication date: June 21, 2012Applicant: MANTIS DEPOSITION LIMITEDInventors: Lars Allers, Alistair Kean, Thomas Matthew Wynne-Powell
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Publication number: 20120128895Abstract: A carbon film forming method including a step in which, inside a film formation chamber provided with a filamentous cathode electrode, an anode electrode disposed around the perimeter of the cathode electrode, and a substrate holder disposed at a position that is separated from the cathode electrode, a disk-like substrate that has a central aperture is disposed in the substrate holder so that one surface of the substrate is opposite the cathode electrode, and a columnar member that has a diameter equal to or greater than a diameter of the central aperture and that has a height equal to or greater than the diameter is disposed with clearance from the cathode electrode and the substrate so that its central axis is coaxial with a central axis of the substrate, one of its circular surfaces is oriented toward the cathode electrode, and its other circular surface is parallel to the one surface of the substrate; and a step in which carbon film is formed on the one surface of the substrate by causing emission of carbType: ApplicationFiled: May 21, 2010Publication date: May 24, 2012Applicant: SHOWA DENKO HD SINGAPORE PTE. LTD.Inventor: Ichiro Ota
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Publication number: 20120097525Abstract: A sputtering source having a bias field generated between the substrate and the sputtering source. A conductive louver or grid arrangement is positioned in front of the substrate, and is biased by an RF or DC source. The substrate itself may or may not be biased, as needed. The conductive louvers are rotatable to also function as shutters or collimator to control the flux of the deposited species. The shutter arrangement is mounted onto the sputtering opening of a facing target source (FTS). The shutter is biased by an RF or DC source and the applied power and rotation position of each slat in the shutter are controlled to achieve the desired flux and collimation.Type: ApplicationFiled: April 25, 2011Publication date: April 26, 2012Inventors: Samuel D. HARKNESS, IV, Quang N. Tran
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Patent number: 8133362Abstract: A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and a plurality of conductive electrodes attached to the clamp, each electrode configured to compress when contacted by the substrate.Type: GrantFiled: February 26, 2010Date of Patent: March 13, 2012Assignee: FUJIFILM CorporationInventors: Jeffrey Birkmeyer, Youming Li, Steve Deming, Mats G. Ottosson
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Publication number: 20120012455Abstract: Apparatuses for deposition of one or more layers. In one aspect, an apparatus for deposition of one or more layers includes an anode; a cathode; a vacuum chamber including the anode and the cathode; a sensor configured to detect an electric potential between a section of the at least one anode and a section of the chamber. Furthermore, methods to monitor a device for deposition of one or more layers are also described.Type: ApplicationFiled: August 27, 2010Publication date: January 19, 2012Inventors: Guido Mahnke, Bernhard Stock, Markus Hanika, Ferdinand Füller
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Patent number: 8092658Abstract: A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable.Type: GrantFiled: August 7, 2007Date of Patent: January 10, 2012Assignee: Tokyo Electron LimitedInventor: Jozef Brcka
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Publication number: 20120000772Abstract: One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.Type: ApplicationFiled: June 30, 2011Publication date: January 5, 2012Applicant: Applied Materials, Inc.Inventors: Alan Ritchie, Michael S. Cox
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Publication number: 20110305912Abstract: The invention is directed toward a method and apparatus which can be used to allow the sputter deposition of material onto at least one article to form a coating on the same. The new form of magnetron described herein allows an increase in sputter deposition rates to be achieved at higher powers and without causing damage to the coating being created. This can be achieved by improved cooling and use of a relatively high magnetic field in the magnetron while at the same time increasing the power to the magnetron by increasing the current at a rate faster than the voltage.Type: ApplicationFiled: July 12, 2007Publication date: December 15, 2011Inventors: Dennis Teer, Alex Goruppa
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Publication number: 20110290638Abstract: The present invention provides a sputter device and a method of manufacturing a magnetic storage medium capable of forming a buried layer with higher production efficiency in manufacturing a magnetic recording medium. In an embodiment of the present invention, cathodes in opposition to each other with a substrate (201) sandwiched in between are arranged and the phase of high-frequency power to be applied to each cathode is made the same. At this time, it is preferable to reduce the distance between each cathode and the substrate (201). Further, it is also preferable to perform deposition of a buried layer while attracting positive ions in plasma to the substrate (201) by an attracting electric field.Type: ApplicationFiled: June 24, 2011Publication date: December 1, 2011Applicant: CANON ANELVA CORPORATIONInventors: Hiroshi Torii, Ge Xu
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Patent number: 8057649Abstract: Disclosed is an invention that uses a coaxial microwave antenna as a primary plasma source in PVD. The coaxial microwave antenna is positioned inside a sputtering target. Instead of using a cathode assist in sputtering, microwaves generated from the coaxial microwave antenna may leak through the sputtering target that comprises a dielectric material to form microwave plasma outside the sputtering target. To further enhance plasma density, a magnetron or a plurality of magnetrons may be added inside the target to help confine secondary electrons. An electric potential may be formed between adjacent magnetrons and may further enhance ionization. To achieve directional control of the generated microwaves, a shield that comprises a dielectric material or dielectric material coated metal may be added proximate the coaxial microwave antenna. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency.Type: GrantFiled: May 6, 2008Date of Patent: November 15, 2011Assignee: Applied Materials, Inc.Inventors: Michael W. Stowell, Nety Krishna
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Publication number: 20110272278Abstract: The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.Type: ApplicationFiled: May 26, 2011Publication date: November 10, 2011Applicant: CANON ANELVA CORPORATIONInventors: Kyosuke Sugi, Tetsuya Endo, Einstein Noel Abarra
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Patent number: 8044595Abstract: A method for operating one or more plasma processes in a plasma chamber, with at least two power supplies, the method comprising the following process steps: a. carrying out an arc detection for at least one of the power supplies; b. generating at least one signal relating to the arc detection and/or data relating to the arc detection; transferring the at least one signal and/or the data to a plasma process-regulating device and/or to one or more other power supplies or to one or more of the arc diverter devices associated with the other power supplies.Type: GrantFiled: May 26, 2009Date of Patent: October 25, 2011Assignee: HUETTINGER Elektronik GmbH + Co. KGInventor: Moritz Nitschke
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Patent number: 8043471Abstract: A plasma processing apparatus includes a processing chamber; a plasma generating unit for generating a plasma of a gas supplied into the processing chamber; a substrate mounting table, disposed in the processing chamber, for mounting a semiconductor substrate having a surface on which an etching and/or a film forming process is to be performed. The apparatus further includes a metal member disposed in the processing chamber and to be etched by the plasma generated in the processing chamber to release a precursor of a film to be formed by the film forming process into the processing chamber; a gas supply unit for supplying a first and a second gas into the processing chamber, wherein the second gas which includes halogen atoms and is different from the first gas; a first and a second wiring for supplying high frequency power to the metal member and the substrate mounting table, respectively.Type: GrantFiled: March 30, 2007Date of Patent: October 25, 2011Assignee: Tokyo Electron LimitedInventor: Hachishiro Iizuka
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Publication number: 20110253674Abstract: The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.Type: ApplicationFiled: September 29, 2008Publication date: October 20, 2011Applicants: New Optics, Ltd., Korea Electrotechnology Research InstituteInventors: Sung Il Chung, S.A. Nikiforov, Hyeon Seok Oh, Pan Kyeom Kim, Hyeon Taeg Gim, Jeong Woo Jeon
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Patent number: 8038850Abstract: A sputter deposition apparatus and method, and a substrate holder for use with a sputter deposition apparatus is disclosed. According to one embodiment of the invention, a sputter deposition apparatus is provided, including at least one sputter target, a first plasma, a substrate holder, and a further plasma. In one embodiment, the further plasma is an ECWR plasma. According to an additional embodiment of the invention, an anode is provided between the further plasma, and the substrate holder. According to a further embodiment, the substrate holder includes a dielectric layer with varying thickness.Type: GrantFiled: June 23, 2006Date of Patent: October 18, 2011Assignee: Qimonda AGInventor: Klaus Ufert
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Publication number: 20110247928Abstract: The sputtering apparatus has: a vacuum chamber in which a substrate is disposed; a cathode unit which is disposed inside the vacuum chamber so as to lie opposite to the substrate. The cathode unit has mounted a bottomed cylindrical target material 4 from a bottom side thereof into at least one recessed portion formed in one surface of a holder, and has assembled therein a magnetic field generator for generating a magnetic field in an inside space of the target material.Type: ApplicationFiled: December 8, 2009Publication date: October 13, 2011Inventors: Naoki Morimnoto, Junichi Hamaguchi
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Publication number: 20110240464Abstract: In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.Type: ApplicationFiled: March 15, 2011Publication date: October 6, 2011Applicant: APPLIED MATERIALS, INC.Inventors: MUHAMMAD RASHEED, LARA HAWRYLCHAK, MICHAEL S. COX, DONNY YOUNG, KIRANKUMAR SAVANDAIAH, ALAN RITCHIE
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Publication number: 20110139612Abstract: A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber.Type: ApplicationFiled: October 27, 2010Publication date: June 16, 2011Inventors: Heung-Yeol Na, Jong-Won Hong, Seok-Rak Chang, Ki-Yong Lee
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Publication number: 20110127157Abstract: A magnetron sputtering apparatus (100) comprising: a magnetic array arranged to create a magnetic field (103) in the vicinity of a tubular target (2) which target at least partially surrounds the magnetic array and acts as a cathode (2a); an anode (2b); the magnetic array being arranged to create an asymmetric plasma distribution with respect to the normal angle of incidence to a substrate (3); and means (1b) for enhancing the magnetic field to produce a relatively low impedance path for electrons flowing from the cathode (2a) to the anode (2b).Type: ApplicationFiled: August 14, 2008Publication date: June 2, 2011Applicant: GENCOA LTD.Inventor: Victor Bellido-Gonzalez
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Publication number: 20110120859Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.Type: ApplicationFiled: November 17, 2010Publication date: May 26, 2011Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Tae-Hoon Yang, Ki-Yong Lee, Jin-Wook Seo, Byoung-Keon Park, Yun-Mo Chung, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Byung-Soo So, Jong-Won Hong, Min-Jae Jeong, Heung-Yeol Na, Ivan Maidanchuk, Eu-Gene Kang, Seok-Rak Chang
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Publication number: 20110114474Abstract: This invention relates to a method and apparatus for deposition of a diffused thin film, useful in the fabrication of semiconductors and for the surface DC-Bias coating of various tools. In order to coat the surface of a treatment object, such as semiconductors, various molded products, or various tools, with a thin film, one or more process factors selected from among a bias voltage, a gas quantity, an arc power, and a sputtering power are continuously and variably adjusted, whereby the composition ratio of the thin film which is formed on the surface of the treatment object not through a chemical reaction but through a physical method is continuously varied, thus manufacturing a thin film having high hardness. The composition ratio of the thin film to be deposited is selected depending on the end use thereof, thereby depositing the thin film having superior wear resistance, impact resistance, and heat resistance.Type: ApplicationFiled: November 22, 2007Publication date: May 19, 2011Inventors: Sang-Youl Bae, Si-Young Choi, Sung-Youp Chung, Jung-Hyun Choi
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Publication number: 20110100806Abstract: [Object] To provide a bias sputtering device having a self-revolving mechanism capable of reducing generation of foreign substances adhered to film formation surfaces. [Solution] In a bias sputtering device 1 provided with a substrate holder 12 having a self-revolving mechanism, the substrate holder 12 has a revolving member 21 and turning holders 23, and on the side of back surfaces of substrates 14 respectively attached to the turning holders 23, disc shaped substrate electrodes 30 having the same size as the substrates 14 are provided at positions distant from the substrates 14 by 0.5 to 10 mm.Type: ApplicationFiled: June 16, 2009Publication date: May 5, 2011Inventors: Satoshi Sugawara, Yasuhiro Enami, Kazuki Takahashi, Susumu Kumagawa, Yousong Jiang, Ichiro Shiono, Yoshihiro Takasaka
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Patent number: 7935393Abstract: Embodiments of a method and system for improving the consistency of a layer or a plurality of layers with a desired profile in a deposition system are generally described herein. Other embodiments may be described and claimed.Type: GrantFiled: August 7, 2007Date of Patent: May 3, 2011Assignee: Tokyo Electron LimitedInventors: Shigeru Mizuno, Takashi Sakuma, Yasushi Mizusawa
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Patent number: 7931787Abstract: Previous limitations in utilizing energetic vapor deposition means are addressed through the introduction of a novel means of vapor deposition, namely, an Electron-Assisted Deposition (EAD) process and apparatus. The EAD mode of film growth disclosed herein is generally achieved by, first, forming a magnetic field that possesses field lines that intersect electrically non-grounded first and second surfaces, wherein at least one surface is a workpiece, thereby forming a magnetic trap between first and second surfaces; second, introducing a high flux of electrons axially into the magnetic field existing between the first and second surfaces, so that the electrons form an electron-saturated space-charge in the space adjacent to the substrate, wherein plasma interactions with the substrate are substantially avoided, and modification of film growth processes is provided predominantly by electron—rather than plasma—bombardment.Type: GrantFiled: February 26, 2003Date of Patent: April 26, 2011Inventor: Donald Bennett Hilliard
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Patent number: 7922880Abstract: Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.Type: GrantFiled: May 24, 2007Date of Patent: April 12, 2011Assignee: Novellus Systems, Inc.Inventors: Anshu A. Pradhan, Douglas B. Hayden, Ronald L. Kinder, Alexander Dulkin