Abstract: One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.

Abstract: In order to form a thin film having a high aspect ratio, a space between a target within a vacuum chamber and a substrate table is enclosed by an anode electrode and earth electrodes. The anode electrode is positioned on the side of the target, and a positive voltage is applied. The earth electrodes are positioned on the side of the substrate table and are connected to earth potential. A trajectory of sputtering particles curved in the direction of flying off by the anode electrode is corrected and is made incident in a perpendicular manner to a surface of the substrate on the substrate table. The amount of sputtering particles incident to the surface of the substrate can therefore be increased and made perpendicularly incident; and a thin film of a high aspect ratio can be formed.

Abstract: A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. A wafer support pedestal within the primary chamber has a planar processing surface for supporting a planar semiconductor wafer. The reactor further includes a secondary reactor chamber having a secondary chamber enclosure and a metal source target within the secondary chamber formed of a metal species to be deposited on said semiconductor wafer. Process gas inlets furnish process gases into a region of the secondary chamber near a working surface of said metal source target. A D.C. power source connected across said metal source target and a conductive portion of said secondary chamber enclosure has sufficient power to support ionization of the process gas near the working surface of the metal source target whereby to form a plasma that sputters metal ions and neutrals from the working surface of the metal source target.

Abstract: A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.

Abstract: A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target. The density of the plasma next to the target is also intensified by positioning an anode grid between the target and the substrate, which provides a more planar geometry. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.

Abstract: The plasma processing apparatus comprises a plasma chamber (1) bounded, on at least one side thereof, by an electrically conductive wall (10), said electrically conductive wall comprising one or several apertures (100) for interrupting a current path through said wall, external electromagnetic means (2) for supplying electromagnetic energy into the plasma chamber through the electrically conductive wall, thereby generating a plasma inside said chamber, and sealing means for sealing the apertures. The apparatus is characterised in that the sealing means comprises one or more electrically conductive enclosure elements which are electrically insulated from the electrically conductive wall.

Abstract: A plasma reaction chamber, particularly a DC magnetron sputter reactor, in which the plasma density and the ionization fraction of the plasma is increased by a plasma inductive loop passing through the processing space. A tube has its two ends connected to the vacuum chamber on confronting sides of the processing space. An RF coil powered by an RF power supply is positioned adjacent to the tube outside of the chamber and aligned to produce an RF magnetic field around the toroidal circumference of the tube such that an electric field is induced along the tube axis. Thereby, a plasma is generated in the tube in a loop circling through the processing space.

Abstract: A coil for inductively coupling RF energy to a plasma in a substrate processing chamber has adjacent spaced and circumferentially overlapping RF feedthroughs adjacent to overlapping ends to improve uniformity of processing of the substrate.

Abstract: In a sputtering apparatus for depositing material onto a workpiece, an RF coil is disposed in a chamber between a first target and a workpiece support. The RF coil includes a re-sputtering surface of electrically conductive non-target material which faces towards the workpiece support and which receives a coating of target material for re-sputtering onto the workpiece. A second target, located between the RF coil and the workpiece support, includes a sputtering surface which faces towards the RF coil and which supplies at least a portion of thc coating of target material to the re-sputtering surface of the RF coil.

Abstract: A method and apparatus for depositing a film on a substrate comprising a deposition interval wherein DC power is applied to a target to form a first plasma and material is sputtered from the target onto a substrate and, during a subsequent forming interval, high frequency power is applied to the target to remove material from at least a portion of the substrate. The sputtering working gas admitted to the chamber may be maintained at a first pressure during the deposition interval and the pressure of the sputtering working gas may be increased to a second pressure during the forming interval.

Abstract: There is provided by this invention a novel method of reactive sputter deposition of a thin film on a substrate (28) utilizing multiphase AC power supplies to drive multiple magnetron targets (22, 24, 26) in a plasma chamber (20) to independently regulate power to each target (22, 24, 26) wherein the voltages on the targets (22, 24, 26) are periodically reversed such that periodically at least one target (22, 24, 26) at a given time acts as an anode collecting electrons when its voltage is positive relative to the plasma (16) while the other targets (22, 24, 26) act as cathodes collecting ions when their voltage is negative relative to the plasma. A DC bias can be connected to the AC power sources wherein by changing the bias, the energy and flux of ions and electrons to the substrate (28) can be changed to increase the density of the deposited film and its refractive index, and alter the morphology and stress of the film.

Abstract: An apparatus and technique are provided for generating a plasma using a power supply circuit and arc detection arrangement. The power supply circuit has a cathode enclosed in a chamber, and is adapted to generate a power-related parameter. The arc detection arrangement is communicatively coupled to the power supply circuit and adapted to assess the severity of arcing in the chamber by comparing the power-related parameter to at least one threshold. According to various implementations, arc occurrences, arcing duration, intensity and/or energy are measured responsive to comparing the power-related parameter to the at least one threshold. According to further implementations, the above-mentioned measured quantities are accumulated and/or further processed.

Abstract: A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: A semiconductor manufacturing process is disclosed that may form a contact structure with a tungsten plug. A contact structure hole may be adequately filled with tungsten, while avoiding plug loss, increased resistance and/or trenching, that can result from conventional approaches. According to one particular embodiment, a titanium film (003) may be deposited with an anisotropic sputtering method, such as an ion metal plasma method, or the like. A titanium film (003) may have a thickness outside a contact hole (020) that is 100 nm or more. However, due to anisotropic sputtering, a titanium film (003) within a contact hole (020) may be thinner than outside the contact hole (020). A contact hole (020) may then be filled with a tungsten film (005). A tungsten film (005) and titanium film (003) may then be etched back leaving a tungsten plug having shape with an upwardly projecting portion.

Abstract: A sputtering apparatus for depositing layers of material onto a substrate includes a vacuum chamber, a first target and a second target positioned within the vacuum chamber. A source of power is placed in electrical communication with the first target and the second target. A switch alternately connects the source of power between the first target and the second target. The first target and the second target are different materials. The switch connects power to the first target when the transport mechanism positions the substrate near the first target and the switch connects power to the second target when the transport mechanism positions the substrate closer to the second target.

Abstract: An electrical field between a positive anode and a negative target in a cavity and a magnetic field in the cavity cause electrons from the target to ionize neutral gas (e.g. argon) atoms in the cavity. The ions cause the target to release sputtered atoms (e.g. aluminum) for deposition on a substrate. A shield between the target and the substrate inhibits charged particle movement to the substrate. The anode potential may be positive, and the shield and the magnetic members may be grounded, to obtain electron movement to the anode, thereby inhibiting the heating of the shield and the magnetic members by electron impingement. The anode may be water cooled. The magnitude of the positive anode voltage relative to the target voltage provides selectively for (a) a uniform thickness of sputtered atoms on the walls of a groove in the substrate or (b) a filling of the groove by the sputtered atoms and a uniform thickness of deposition on the substrate surface including the filled groove.

Abstract: A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface.

Abstract: An aluminum deposition shield substantially improves transfer of radiated heat from within the vacuum chamber, in comparison to a stainless steel deposition shield. The aluminum deposition shield remains cooler during wafer processing and assists in cooling the chamber components.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

Abstract: The present invention concerns an apparatus comprising a fixture and a sputtering device. The fixture may be configured to position a semiconductor wafer in a plasma. The sputtering device may be configured to sputter metal atoms onto a surface of the wafer in a direction perpendicular to the surface.

Abstract: Capacitances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to “time-averaging” of the RF voltage distributions along the RF coil.

Abstract: Ionized sputter deposition apparatus and method employing a low frequency or DC transverse magnetic field to increase the transverse component of the trajectory of sputtered material ions being deposited on the workpiece. Adjusting the strength of the magnetic field will adjust the trajectory angles of the sputtered material being deposited on the workpiece, thereby controlling the ratio between the deposition rates on the upper and lower side walls of openings in the workpiece. Accordingly, the invention permits optimizing the top-to-bottom uniformity of layers deposited on the side walls by adjusting the strength of the magnetic field. The invention is especially useful for depositing thin wetting layers or side wall barrier layers having uniform thickness.

Abstract: A dual collimation deposition apparatus and method are disclosed in which the dual collimation apparatus includes at least a long-throw collimator in combination with one or more physical collimators. A new physical collimator and shield design are also disclosed for improved process uniformity and increased equipment productivity.

Abstract: An apparatus and method for processing workpieces, which include a chamber having a coil for inductively coupling RF energy through a dielectric window into the chamber to energize a plasma, and a shield positioned between a sputtering target and the dielectric window to reduce or eliminate deposition of sputtered material onto a portion of the dielectric window. In the illustrated embodiment, the window shield is spaced from the dielectric window to define a gap and has at least one opening, which permit RF energy to be coupled through the gap and through the window shield opening to the interior of the chamber. As a consequence, the coil may be positioned exterior to the chamber to simplify construction and operation of the chamber.

Abstract: In a thin-film formation process and system, a target and a substrate are placed in a sputtering space and a film-forming space, respectively, the pressure in the film-forming space is maintained at a pressure lower than the pressure in the sputtering space and a pressure sufficient for sputtered particles to move in the film-forming space with their mean free path which is longer than the distance between the grid plate and the substrate, and the target is sputtered to form a thin film on the substrate.

Abstract: In general, the present invention is directed to acoustically enhanced deposition processes, and a system for performing same. In one embodiment, the method comprises providing a substrate having a layer of insulating material formed thereabove, the layer of insulating material having a plurality of openings formed therein, performing a deposition process to form a layer of metal at least in the openings in the layer of insulating material, and actuating at least one acoustic generator to generate sound waves during the deposition process. In one illustrative embodiment, the system comprises a deposition tool for receiving a substrate having a layer of insulating material formed thereabove, the layer of insulating material having a plurality of openings formed therein, and performing a deposition process to form a layer of metal at least in the openings in the layer of insulating material, and at least one acoustic generator coupled to the deposition tool to generate sound waves during the deposition process.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. In one embodiment, a chamber having one or more current return plates, a support member, an electromagnetic field generator and a support member is provided. The target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. During processing, a bias is applied to the support member by an RF power source. The return plates are selectively energized to provide a return path for the RF currents, thereby affecting the orientation of an electric field in the chamber.

Abstract: The present invention provides a film forming method comprising the steps of ionizing sputtering particles and applying a periodically changing voltage to an electrode near a substrate, wherein a time for applying a voltage equal to or higher than an intermediate value between maximum and minimum values of the periodically changing voltage is shorter than a time for applying a voltage equal to or less than the intermediate value, and a film forming apparatus for carrying out the above method.

Abstract: Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.

Abstract: A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

Abstract: A partial turn coil disposed in a semiconductor fabrication chamber for generating a plasma and sputter depositing coil material onto a substrate can exhibit reduced RF voltages.

Abstract: The invention relates to a device and method for coating substrates in a vacuum, wherein a plasma is to be generated from a target and ionized particles of the plasma are to be deposited on the substrate in the form of a layer, as has long been used in a very wide range of known PVD processes. The intention of the invention is to prevent droplets and particles from settling in the applied layer, which droplets and particles have an adverse effect on the properties of the layer, or at least to reduce the number of these droplets and particles. To solve this problem, an absorber electrode which is at an electrically positive potential is used, which electrode is a few mm away from the root of the plasma, and is arranged in front of or next to the plasma in such a way and is shaped in such a way that an electric field is formed around the absorber electrode. The electric field vector is to be oriented at least approximately orthogonally to the direction of movement of the ionized particles of the plasma.

Abstract: A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and s

Abstract: An electric field is provided in a first direction between an anode and a target having a flat disposition. A magnetic field is provided such that the magnetic flux lines are in a second direction substantially perpendicular to the first direction. The magnet structure may be formed from permanent magnets extending radially in a horizontal direction, like the spokes of a wheel, and from magnetizable pole pieces extending vertically from the opposite ends of the spokes. The permanent magnets and the pole pieces define a well. The target is disposed in the well so that its flat disposition is in the same direction as the magnetic flux lines. Molecules of an inert gas flow through the well. Electrons in the well move in a third direction substantially perpendicular to the first and second directions. The electrons ionize molecules of the inert gas. The ions are attracted to the target and sputter atoms from the surface of the target. The sputtered atoms become deposited on a substrate.

Abstract: A method and apparatus for performing physical vapor deposition of a layer or a substrate, composed of a deposition chamber enclosing a plasma region for containing an ionizable gas; an electromagnetic field generating system surrounding the plasma region for inductively coupling an electromagnetic field into the plasma region to ionize the gas and generate and maintain a high density, low potential plasma; a source of deposition material including a solid target constituting a source of material to be deposited onto the substrate; a unit associated with the target for electrically biasing the target in order to cause ions in the plasma to strike the target and sputter material from the target; and a substrate holder for holding the substrate at a location to permit material sputtered from the target to be deposited on the substrate.

Abstract: Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma.

Abstract: The present invention relates to a system for executing a plasma-based sputtering method, such as for example a PVD (Physical Vapor Deposition) method. In a process chamber (1), a plasma (2) is produced in order to accelerate ionized particles, carried away from a sputter target (21), through the plasma (2) towards a substrate (3), using an electrical field. In the process chamber (1), between the plasma (2) and the substrate (3) a magnetic field component (6) is produced by that is situated parallel to a substrate surface (5). Through the magnetic field component (6), the angular distribution of the ionized particles is deflected from its flight path perpendicular to the substrate surface, so that impact angles are produced that have a greater angular scattering.

Abstract: In order to provide technology where film deposition speed and Sr/Ti composition ratio is constant even when forming dielectric films consecutively on a plurality of substrates using sputtering techniques, a sputtering apparatus is provided with an opposing electrode located about the periphery of a mounting table at an inner bottom surface of a vacuum chamber. Further, a multiplicity of holes are formed at the surface of the opposing electrode so that the surface area of the opposing electrode is large. Sputtering dielectric material becomes affixed to the surface of the opposing electrode so that a dielectric film is formed at this surface. The charge density of charge distributed at the surface of the opposing electrode is therefore small compared with the related art even when positive charge is distributed. The potential of the opposing electrode surface can therefore be kept substantially at earth potential.

Abstract: Sputtering apparatus using a collimating filter to limit the angles at which sputtered particles will reach the surface of the substrate or workpiece being processed is shown. The sputtering apparatus relies on a combination of a planar sputter source larger in size than the workpiece and having highly uniform emission characteristics across the much of its surface, including its center; a collimating filter; and low operating pressure to avoid scattering of sputtered atoms after they have passed through the collimation filter. In the preferred embodiment, the collimation filter is made from a material which has substantially the same thermal coefficient of expansion as the film which is deposited on the substrate. In one specific embodiment, a titanium collimation filter is used when the sputtering system is used to deposit films of titanium, titanium nitride or titanium/tungsten alloy.

Abstract: A magnetic shield to reduce sputtering of an RF coil for a plasma chamber in a semiconductor fabrication system is provided. The magnetic shield also reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

Abstract: A magnetron sputter reactor particularly useful for sputtering a magnetic material such as cobalt into high aspect-ratio holes of a wafer. A magnetron is positioned in back of the target which is spaced from the pedestal supporting the wafer by at least 50% of the wafer diameter in a long-throw configuration. A grounded collimator is additionally placed between the target and wafer, preferably relatively close to the target to mostly confine plasma near the target. A grounded shield protects the sides and bottom of the chamber and the pedestal sides from sputter deposition, and it supports the collimator on a ledge in its middle.

Abstract: A coil for inductively coupling RF energy to a plasma in a substrate processing chamber has adjacent spaced and overlapping ends to improve uniformity of processing of the substrate.

Abstract: Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.

Abstract: A method and an apparatus for forming a layer on a substrate are disclosed. In accordance with one embodiment, a substrate (901) is placed into a chamber (30) that includes a coil (16) and a shield (14) wherein the coil and the shield are electrically isolated by an isolation/support member (32) having a first surface (321) that is substantially contiguous with a surface of the coil and having a second surface (322) that is substantially contiguous with a surface of the shield. A layer (1002, 1102) is then deposited onto the substrate (901).

Abstract: A processing system 12 for processing a substrate with an ionized plasma comprises a processing chamber 13 defining a processing space 14 and including a substrate support 17, a gas inlet 20, and a plasma source for creating an ionized plasma in the processing space. The plasma source comprises an inductive element 24 operable for coupling electrical energy into the processing space. The inductive element 24 winds around portions of the processing space 14 inside the processing chamber 13 and is encased inside a dielectric material 30 to physically separate the element from the processing space while allowing the element to couple electrical energy into the processing space. Alternatively, the inductive element is coupled to a DC power supply 98 for enhancing its magnetization to reduce the capacitive coupling of energy between the inductive element and the plasma.

Abstract: A system and method have been provided for an improved oxide deposition process using a DC sputtering magnetron. The invention prolongs the useful life of the anode by providing shielded electron collection surfaces, to minimize the deposition of insulator material on the anode. Specifically, the anode has a fin with a bottom electron collection surface that is shielded from the target material deposition. A small electro-magnet helps deflect the flow of electrons to the bottom surface of the fin. Vias in the fin promote the flow of electrons to the fin top surface, which is also shielded from the deposition material, even if deposition material begins to accumulate on the fin bottom surface.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: A sputtering system for the depositing or etching of insulating, conducting, or semiconducting thin films is disclosed, in which the sputtering plasma is irradiated with a transverse, adjustable ultraviolet emission produced by an ultraviolet optical cavity containing a lamp discharge. The cavity irradiates the sputtering plasma volume with a sufficiently high optical flux to enact significant changes in the film produced. This effect is enabled by the device geometry, which, in the preferred embodiment, provides uniquely high efficiency and stability in the optical coupling between the lamp discharge and the sputtering plasma, resulting in the ability to significantly alter ionized and excited state populations within or above the sputtering plasma. The design also allows the operator to significantly control the volume and species involved in the optical interaction. A novel ultraviolet source for materials processing is also disclosed.

Abstract: A target 3, which is composed of a compound material containing a gaseous component element, is subjected to cathode discharge with a cathode 30 while closing a main valve 4 and a gas-introducing valve 9 to tightly close a vacuum chamber 1. The vacuum chamber 1 is not subjected to reduction of pressure with a vacuum pump 5 by opening the main valve 4. Therefore, the gaseous component element, which is contained in the compound material, is not discharged by the vacuum pump 5. Accordingly, almost all of the gaseous component element contained in the compound material is successfully allowed to adhere and deposit onto a substrate 2. Therefore, a thin film, which has a composition extremely close to that of the compound material, is formed on the substrate 2. According to the film formation method as described above, a compound film, which is used as a coating material for an optical element, can be formed in a desired composition on the optical element.