Focusing Target (e.g., Conical Target, Plural Inclined Targets, Etc.) Patents (Class 204/298.18)
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Patent number: 7179351Abstract: In one embodiment, a magnetron sputtering apparatus forms a closed plasma loop and an open plasma loop within the closed plasma loop. The open plasma loop allows for relatively uniform erosion on the face of a target by broadening the sputtered area of the target. The open plasma loop may be formed and swirled using a rotating magnetic array to average the target erosion.Type: GrantFiled: December 15, 2003Date of Patent: February 20, 2007Assignee: Novellus Systems, Inc.Inventors: Daniel R. Juliano, Douglas B. Hayden
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Patent number: 7179350Abstract: An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from the surfaces of the targets and other components (3) provide a single ignition of the targets and eliminate target ignitions thereafter and (4) reduce the substrate temperature by using low energy (“cold”) electrons from a plasma discharge to produce a low energy current. The asymmetry may result from amplitude differences between the voltage in alternate half cycles and the voltage in the other half cycles. A second alternating voltage (preferably radio frequency) modulates the asymmetric alternating voltage to provide the smooth plasma ignition.Type: GrantFiled: May 23, 2003Date of Patent: February 20, 2007Assignee: Tegal CorporationInventors: Pavel N. Laptev, Valery V. Felmetsger
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Patent number: 7141145Abstract: A method of forming a thin film on a substrate/workpiece by sputtering, comprising steps of: (a) providing an apparatus comprising a vacuum chamber including at least one sputtering source and a gas supply means for injecting a gas containing at least one reactive component into said chamber, the gas supply means comprising a plurality of differently-sized outlet orifices adapted for providing substantially the same flow rate of gas from each orifice; (b) providing a substrate/workpiece having at least one surface for formation of a thin film thereon; (c) generating a sputtered particle flux from the at least one sputtering source; (d) injecting the gas containing the at least one reactive component into the chamber via the gas supply means, such that the same gas flow rate is provided at each orifice; and (e) forming a reactively sputtered thin film on the at least one surface of the substrate/workpiece, the reactively sputtered thin film having a substantially uniform content of the at least one reactiveType: GrantFiled: October 2, 2003Date of Patent: November 28, 2006Assignee: Seagate Technology LLCInventors: Charles Frederick Brucker, Paul S. McLeod, Chang Yi
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Patent number: 7135097Abstract: Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer.Type: GrantFiled: November 26, 2003Date of Patent: November 14, 2006Assignee: FTS CorporationInventors: Sadao Kadokura, Hisanao Anpuku
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Patent number: 7018515Abstract: A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.Type: GrantFiled: September 23, 2004Date of Patent: March 28, 2006Assignee: Applied Materials, Inc.Inventors: Tza-Jing Gung, Hong S. Yang, Anantha K. Subramani, Maurice E. Ewert, Keith A. Miller, Vincent E. Burkhart
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Patent number: 6881311Abstract: Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic fiType: GrantFiled: November 15, 2002Date of Patent: April 19, 2005Assignee: FTS CorporationInventors: Sadao Kadokura, Hisanao Anpuku
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Patent number: 6872285Abstract: This application discloses a system for depositing a magnetic film for a magnetic recording layer or depositing an underlying film prior to depositing a magnetic film as a recording layer. The system comprises; a chamber in which the film is deposited onto a substrate by sputtering, a target that is provided in the chamber and made of material of the film to be deposited, a sputter power source for applying voltage to the target for the sputtering, and a direction control member for controlling sputter-particles released from the target during the sputtering. The direction control member is provided between the substrate and the target. The direction control member provides a passage for the sputter-particles. The direction control member lets the sputter-particles selectively pass through, thereby allowing magnetic anisotropy to the magnetic film. The passage is not close but open in its cross section.Type: GrantFiled: August 30, 2002Date of Patent: March 29, 2005Assignee: Anelva CorporationInventors: Shinji Furukawa, Miho Sakai
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Patent number: 6860977Abstract: A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-off material as well as service life of the target. Good distribution values of the layer on the workpiece are obtained that are stable over the entire target service life, and a concave sputter face in a configuration with small target-to-workpiece distance is combined with a magnet system to form the magnetron electron trap in which the outer pole of the magnetron electron trap is stationary and an eccentrically disposed inner pole with a second outer pole part is rotatable about the central source axis.Type: GrantFiled: November 6, 2003Date of Patent: March 1, 2005Assignee: Unaxis Balzers LimitedInventors: Bernd Heinz, Martin Dubs, Thomas Eisenhammer, Pius Grunenfelder, Walter Haag, Stanislav Kadlec, Siegfried Krassnitzer
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Patent number: 6830664Abstract: A cathode for a cluster tool in accordance with the present invention includes a base, a disc-shaped target mounted to the base and a magnetic source for establishing magnetic flux lines through the target. The target further comprises a top plate with a plurality of through holes; and a bottom plate with a plurality of bottom plate openings which interconnect distribution grooves formed in one surface with base face channels formed in the other surface. When the top plate is mated to the bottom plate, a path of fluid communication is established from the base face channels to the through holes to allow for inert gas to pass through the target. During operation, the through holes act as micro-cathodes to more efficiently cause material to be sputtered from the target. Each through hole defines a through hole axis, and the magnetic flux lines are parallel with the through holes axes.Type: GrantFiled: August 5, 2002Date of Patent: December 14, 2004Assignee: Tegal CorporationInventor: Andrew P. Clarke
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Publication number: 20040231972Abstract: An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from the surfaces of the targets and other components (3) provide a single ignition of the targets and eliminate target ignitions thereafter and (4) reduce the substrate temperature by using low energy (“cold”) electrons from a plasma discharge to produce a low energy current. The asymmetry may result from amplitude differences between the voltage in alternate half cycles and the voltage in the other half cycles. A second alternating voltage (preferably radio frequency) modulates the asymmetric alternating voltage to provide the smooth plasma ignition.Type: ApplicationFiled: May 23, 2003Publication date: November 25, 2004Inventors: Pavel N. Laptev, Valery V. Felmetsger
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Publication number: 20040231973Abstract: According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of the substrate. During the sputtering, not only the targets but also magnetic field forming devices are moved relative to the targets, and therefore, a large area of the targets can be sputtered. In addition, when the magnetic field forming devices are also moved with respect to the substrate, the region of the target which is highly sputtered, moves with respect to the substrate, so that the thickness distribution of the film formed on the substrate can be even more uniform.Type: ApplicationFiled: May 19, 2004Publication date: November 25, 2004Applicant: ULVAC, INC.Inventors: Shigemitsu Sato, Masasuke Matsudai, Hiroki Oozora, Junya Kiyota, Hajime Nakamura, Satoru Ishibashi, Atsushi Ota
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Publication number: 20040180144Abstract: A method is disclosed to effectively achieve a low deposition temperature of CMO memory materials by depositing the CMO memory material at relatively low temperatures that give an amorphous film, then to later melt and re-crystallize the CMO memory material with a laser (laser annealing).Type: ApplicationFiled: March 13, 2003Publication date: September 16, 2004Inventors: Makoto Nagashima, Darrell Rinerson, Steve K. Hsia
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Patent number: 6790326Abstract: A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.Type: GrantFiled: June 13, 2002Date of Patent: September 14, 2004Assignee: applied materials, inc.Inventors: Anantha Subramani, Umesh Kelkar, Jianming Fu, Praburam Gopalraja
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Publication number: 20040173455Abstract: A sputtering target having an annular vault with a throat between two sidewalls and facing a substrate to be sputter coated. The vault is partially closed by a plate placed in the annular throat between the sidewalls. Thereby, the plasma density is increased within the vault. Furthermore, the position of the annular gap in the plate between the two sidewalls may be chosen to increase uniformity of sputtering deposition arising from the two sidewalls. The plate may be formed of one or more annular rings attached to the walls or a single plate having apertures formed therein may bridge the throat. Alternatively, the target may be formed as a cylindrical hollow cathode with the plate partially closing the circular throat. A rotating asymmetric roof magnetron may be combined with a hollow cathode without the restricting plate.Type: ApplicationFiled: March 9, 2004Publication date: September 9, 2004Inventor: Wei Wang
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Publication number: 20040163952Abstract: A magnetron with mechanisms for controlling the magnetic field that acts on its targets in such a manner as to provide control over erosion patterns and independent control of stress, uniformity, deposition rate, and coupling coefficient of a deposited film. A magnetron according to the present teachings includes a set of targets each for eroding a material for deposition onto a wafer contained in the magnetron and a mechanism for adjusting a racetrack position on each target. The racetrack position defines the areas of the targets from which a predominant amount of the material is eroded. The control of racetrack position enables precise control of erosion characteristics and control over stress, uniformity, deposition rate, and coupling coefficient.Type: ApplicationFiled: February 21, 2003Publication date: August 26, 2004Inventors: Yury Oshmyansky, Sergey Mishin, Richard C. Ruby, John D. Larson
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Publication number: 20040163944Abstract: A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with target aging. A magnetron according to the present teachings includes a set of concentric targets for sputtering a film onto a wafer in response to an AC power and a DC power applied to the targets and a power controller that adjusts the DC power. The adjustments to the DC power enable the magnetron to maintain uniformity in the thicknesses of films formed with the magnetron throughout the life of its targets.Type: ApplicationFiled: February 21, 2003Publication date: August 26, 2004Inventors: Yury Oshmyansky, Sergey Mishin, Richard C. Ruby, John D. Larson
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Patent number: 6776881Abstract: For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.Type: GrantFiled: September 25, 2002Date of Patent: August 17, 2004Assignee: Unaxis Balzers AktiengesellschaftInventors: Pius Gruenenfelder, Hans Hirscher, Urs Schwendener, Walter Haag
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Publication number: 20040149575Abstract: An array of unbalanced magnetrons arranged around a centrally-located space for sputter coating of material from target electrodes in the magnetrons onto a substrate disposed in the space. The electrodes are powered in pairs by an alternating voltage and current source. The unbalanced magnetrons, which may be planar, cylindrical, or conical, are arranged in mirror configuration such that like poles are opposed across the substrate space or are adjacent on the same side of the substrate space. The magnetrons are all identical in magnetic polarity, such that there is no magnetic coupling between either opposed or adjacent magnetrons. A positive plasma potential produced by the AC driver prevents electrons from escaping to ground along the unclosed field lines, increasing plasma density in the background working gas and thereby improving the quality of coating being deposited on the substrate.Type: ApplicationFiled: November 24, 2003Publication date: August 5, 2004Applicant: Isoflux, Inc.Inventors: David A. Glocker, Mark Romach
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Patent number: 6761804Abstract: A source of sputtered deposition material has, in one embodiment, a torus-shaped plasma generation area in which a plasma operates to sputter the interior surface of a toroidal cathode. In one embodiment, the sputtered deposition material passes to the exterior of the source through apertures provided in the cathode itself. A torus-shaped magnetic field generated in the torus-shaped plasma facilitates plasma generation, sputtering of the cathode and ionization of the sputtered material by the plasma.Type: GrantFiled: February 11, 2002Date of Patent: July 13, 2004Assignee: Applied Materials, Inc.Inventor: Mark A. Perrin
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Patent number: 6752911Abstract: The invention relates to a device for coating an object at a high temperature by means of cathode sputtering, having a vacuum chamber and a sputter source, the sputter source having a sputtering cathode. Inside the vacuum chamber is arranged an inner chamber formed from a heat-resistant material, which completely surrounds the sputtering cathode and the object to be coated, at a small spacing, and which has at least one opening to let a gas in and at least one opening to let a gas out.Type: GrantFiled: July 16, 2002Date of Patent: June 22, 2004Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.Inventor: Thomas Jung
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Patent number: 6749730Abstract: An object of the present invention is to alter the shape of the magnetic field with ease in the state of auxiliary magnet poles being disposed in a sputtering apparatus. In a sputtering apparatus according to the present invention, one or more magnetron type sputtering evaporation sources 3 and one or more auxiliary magnet poles 9 are disposed in a chamber 1 so as to surround a solid substance 2 to be deposited, wherein an angle changing mechanism for changing the alignment angle of the auxiliary magnet poles 9 relative to the solid substance 2 to be deposited in order to alter the shape of the magnetic field formed by the magnetron type sputtering evaporation sources 3 and the auxiliary magnet poles 9.Type: GrantFiled: February 11, 2003Date of Patent: June 15, 2004Assignee: Kobe Steel, Ltd.Inventors: Toshimitsu Kohara, Koichiro Akari
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Patent number: 6743342Abstract: A sputtering target having an annular vault with a throat between two sidewalls and facing a substrate to be sputter coated. The vault is partially closed by a plate placed in the annular throat between the sidewalls. Thereby, the plasma density is increased within the vault. Furthermore, the position of the annular gap in the plate between the two sidewalls may be chosen to increase uniformity of sputtering deposition arising from the two sidewalls. The plate may be formed of one or more annular rings attached to the walls or a single plate having apertures formed therein may bridge the throat. Alternatively, the target may be formed as a cylindrical hollow cathode with the plate partially closing the circular throat. A rotating asymmetric roof magnetron may be combined with a hollow cathode without the restricting plate.Type: GrantFiled: March 12, 2002Date of Patent: June 1, 2004Assignee: Applied Materials, Inc.Inventor: Wei Wang
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Patent number: 6733642Abstract: An array of unbalanced magnetrons arranged around a centrally-located space for sputter coating of material from target electrodes in the magnetrons onto a substrate disposed in the space. The electrodes are powered in pairs by an alternating voltage and current source. The unbalances magnetrons, which may be planar, cylindrical, or conical, are arranged in mirror configuration such that like poles are opposed across the substrate space or are adjacent on the same side of the substrate space. The magnetrons are all identical in magnetic polarity. A positive plasma potential produced by the AC driver prevents electrons from escaping to ground along the unclosed field lines, increasing plasma density in the background working gas and thereby improving the quality of coating being deposited on the substrate.Type: GrantFiled: April 29, 2002Date of Patent: May 11, 2004Inventors: David A. Glocker, Mark Romach
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Patent number: 6730196Abstract: A magnetron sputter reactor having a complexly shaped target with a vault arranged about a central axis facing the wafer. The vault may be right cylindrical with axially magnetized magnets disposed in back of its sidewall or be annular with preferably opposed magnets disposed in back of its two sidewalls. One or two electromagnetic coils are disposed about the processing space between the target and the wafer to either promote extraction of metal ions from the vault, to defocus the ion beam extracted from the vault and focused towards the central axis, or to compensate for a magnetic shield surrounding the reactor.Type: GrantFiled: August 1, 2002Date of Patent: May 4, 2004Assignee: Applied Materials, Inc.Inventors: Wei D. Wang, Praburam Gopalraja, Jianming Fu
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Patent number: 6719886Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.Type: GrantFiled: June 29, 2001Date of Patent: April 13, 2004Assignee: Tokyo Electron LimitedInventors: John Stephen Drewery, Glyn Reynolds, Derrek Andrew Russell, Jozef Brcka, Mirko Vukovic, Michael James Grapperhaus, Frank Michael Cerio, Jr., Bruce David Gittleman
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Publication number: 20040026233Abstract: Methods and apparatuses for shielding magnetic flux which is associated with a semiconductor fabrication system are provided. A magnetic shield assembly substantially surrounds a side wall of a plasma reactor. The shield assembly comprises a passive shield member in combination with an active shield member. As a result, effective shielding of magnetic flux can occur without excessive distortion of the magnetic field line pattern in the plasma region of the plasma reactor. In one aspect, the shield assembly comprises a first shield member adapted to attenuate a magnetic flux density. The first shield member is disposed in a parallel, spaced apart relationship from the side wall. A second member is attached to the first shield member and is constructed of a ferromagnetic material which is permanently magnetized.Type: ApplicationFiled: August 8, 2002Publication date: February 12, 2004Applicant: Applied Materials, Inc.Inventor: Mark A. Perrin
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Patent number: 6689253Abstract: A facing target sputtering apparatus, comprising: inner and outer spaced-apart, concentric, and coextensive tubular cathodes open at each end, with the inwardly facing surface of the outer cathode and the outwardly facing surface of the inner cathode; a first pair of ring-shaped magnet means extending around the outwardly facing surface of the outer cathode at the ends thereof, with a first polarity magnetic pole facing the outwardly facing surface; a second pair of ring-shaped magnet means extending around the inwardly facing surface of the inner cathode at the ends thereof, with a second, opposite polarity magnetic pole facing the inwardly facing surface; and a substrate positioned in spaced adjacency to an end of the inner and outer cathodes; wherein: magnetic flux lines from the first and second pairs of magnet means uni-directionally pass through portions of an annularly-shaped space between the ends of the inner and outer cathodes, and during sputtering operation, plasma is substantially confined tType: GrantFiled: June 13, 2002Date of Patent: February 10, 2004Assignee: Seagate Technology LLCInventors: Chinsoon Koh, Stephen Hiroshi Sawasaki, Jianzhong Shi, Yuanda Randy Cheng
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Publication number: 20040020770Abstract: A magnetron sputter reactor having a complexly shaped target with a vault arranged about a central axis facing the wafer. The vault may be right cylindrical with axially magnetized magnets disposed in back of its sidewall or be annular with preferably opposed magnets disposed in back of its two sidewalls. One or two electromagnetic coils are disposed about the processing space between the target and the wafer to either promote extraction of metal ions from the vault, to defocus the ion beam extracted from the vault and focused towards the central axis, or to compensate for a magnetic shield surrounding the reactor.Type: ApplicationFiled: August 1, 2002Publication date: February 5, 2004Applicant: Applied Materials, Inc.Inventors: Wei D. Wang, Praburam Gopalraja, Jianming Fu
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Patent number: 6682637Abstract: To optimize the yield of sputtered-off material as well as the service life of the target on a magnetron source, in which simultaneously good attainable distribution values of the layer on the substrate, stable over the entire target service life, a concave sputter face 20 in a configuration with small target-substrate distance d is combined with a magnet system to form the magnetron electron trap in which the outer pole 3 of the magnetron electron trap is disposed stationarily and an eccentrically disposed inner pole 4 with a second outer pole part 11 is developed rotatable about the central source axis 6.Type: GrantFiled: June 4, 2002Date of Patent: January 27, 2004Assignee: Unaxis Balzers LimitedInventors: Bernd Heinz, Martin Dubs, Thomas Eisenhammer, Pius Grunenfelder, Walter Haag, Stanislav Kadlec, Siegfried Krassnitzer
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Publication number: 20040000478Abstract: A hollow cathode sputtering target and associated magnetron. The target includes a tubular sidewall and a circular roof forming a cylindrical vault arranged about an axis. The sidewall is surrounded by a first set of magnets of a first magnetic polarity along the axis. A second set of magnets, disposed in back of the roof, and asymmetric and rotatable about the axis, includes an outer pole preferably of the first magnetic polarity surrounding an inner pole of the opposed magnetic polarity and of lesser total magnetic intensity. Optionally, the roof and sidewall are separate members having individual power supplies. Further optionally, the first set of magnets are asymmetric and rotatable with the second set of magnets about the axis.Type: ApplicationFiled: June 26, 2002Publication date: January 1, 2004Inventor: Charles S. Guenzer
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Patent number: 6660140Abstract: In a sputtering apparatus for depositing material onto a workpiece, an RF coil is disposed in a chamber between a first target and a workpiece support. The RF coil includes a re-sputtering surface of electrically conductive non-target material which faces towards the workpiece support and which receives a coating of target material for re-sputtering onto the workpiece. A second target, located between the RF coil and the workpiece support, includes a sputtering surface which faces towards the RF coil and which supplies at least a portion of thc coating of target material to the re-sputtering surface of the RF coil.Type: GrantFiled: January 5, 2000Date of Patent: December 9, 2003Assignee: Trikon Holdings LimitedInventors: Keith Edward Buchanan, Stephen Robert Burgess, Paul Rich
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Patent number: 6649036Abstract: A mirrortron sputtering apparatus for sputtering on a substrate includes a vacuum chamber for placing therein a pair of targets spaced apart from each other with inner surfaces thereof facing each other and outer surfaces thereof positioned opposite to the inner surfaces, and magnets respectively disposed closer to the outer surfaces of the targets for forming a magnetic field between said pair of targets. The magnetic field has a magnetic field distribution with a peripheral region having a high magnetic flux density and a center region having a low magnetic flux density. In this arrangement, the substrate is set alongside a space between the pair of targets as facing said magnetic field.Type: GrantFiled: February 8, 2001Date of Patent: November 18, 2003Inventors: Toyoaki Hirata, Masahiko Naoe
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Patent number: 6641702Abstract: The present invention is directed to a sputtering device for depositing multi-layer films on a substrate, the sputtering device comprising at least one planar-magnetron-sputtering-cathode and at least one facing-targets-sputtering-cathode housed in a single vacuum chamber, and adapted such that each planar-magnetron-sputtering-cathode and facing-targets-sputtering-cathode can be selectively positioned for sputtering deposition onto a substrate.Type: GrantFiled: September 26, 2001Date of Patent: November 4, 2003Assignee: Data Storage InstituteInventors: Jian Zhong Shi, Jian Ping Wang
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Publication number: 20030183518Abstract: A sputtering cathode comprising a concave surface for receiving and supporting a sputtering target having a substantially conformal concave shape. The cathode is cooled via passage of a suitable coolant through passageways within the cathode. The target is constrained to the cathode along the target periphery. The target expands thermally during sputtering, but being constrained laterally the target is forced into intimate contact with the cooled concave cathode surface. The target is thus cooled over its entire surface, resulting in predictable, uniform erosion rates and target wear, whereas prior art planar cathodes are known to suffer from undesirable buckling of the target away from the cathode due to thermal expansion of the target in use. Cathodes and targets in accordance with the invention are non-planar and preferably are either spherically or cylindrically concave.Type: ApplicationFiled: March 24, 2003Publication date: October 2, 2003Inventors: David A. Glocker, Mark Romach
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Publication number: 20030173215Abstract: A sputtering target having an annular vault with a throat between two sidewalls and facing a substrate to be sputter coated. The vault is partially closed by a plate placed in the annular throat between the sidewalls. Thereby, the plasma density is increased within the vault. Furthermore, the position of the annular gap in the plate between the two sidewalls may be chosen to increase uniformity of sputtering deposition arising from the two sidewalls. The plate may be formed of one or more annular rings attached to the walls or a single plate having apertures formed therein may bridge the throat. Alternatively, the target may be formed as a cylindrical hollow cathode with the plate partially closing the circular throat. A rotating asymmetric roof magnetron may be combined with a hollow cathode without the restricting plate.Type: ApplicationFiled: March 12, 2002Publication date: September 18, 2003Applicant: Applied Materials, Inc.Inventor: Wei Wang
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Patent number: 6620298Abstract: A first target is arranged opposite a substrate while a second target is arranged not opposite the substrate within a vacuum chamber. Pressure within the vacuum chamber is adjusted to a first pressure, and during a period wherein the pressure is changed from the first pressure to a second pressure which is lower than the first pressure, plasma density above the second target is made greater than plasma density above the first target. At a time point when the second pressure is reached, the plasma density above the first target is made greater than the plasma density above the second target.Type: GrantFiled: April 18, 2000Date of Patent: September 16, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Hiroshi Hayata
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Patent number: 6620299Abstract: Process and device for coating substrates utilizing bipolar pulsed magnetron sputtering in the frequency range between 10 and 100 kHz, wherein the device includes at least three magnetron sources. Each of the at least three magnetron sources includes a target. At least two of the targets are connected to a potential-free bipolar power supply device. The at least three targets are arranged relative to the substrates in such a way that the substrates are located at least partially inside a discharge current during a coating of the substrates. A switching device is adapted to connect the targets to the bipolar power supply device. A technological predetermined program is used for controlling the switching device. The switching device connects at least two of the targets at a time to the bipolar power supply device according to the technologically predetermined program.Type: GrantFiled: June 27, 2001Date of Patent: September 16, 2003Assignee: Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung E.V.Inventors: Fred Fietzke, Klaus Goedicke, Siegfried Schiller
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Publication number: 20030164288Abstract: A target for physical-vapor deposition (PVD) and methods for depositing magnetic materials are described. Radio frequency (RF) or direct current (DC) power is introduced into the chamber through the target to produce plasma. The planar magnetron system is chosen for its high deposition rates. Since the permanent magnets are behind the target in the traditional system, a magnetic target interferes with the required magnetic fields on the target. To eliminate this problem permanent magnets are arranged on the surface and a magnetic target is used as a part of the magnetic circuit. Strong magnetic fields on the target can now be maintained for high deposition rates. The permanent magnets may be covered by a relatively thin, suitable protective-film or by a film of the same material as the target.Type: ApplicationFiled: March 2, 2002Publication date: September 4, 2003Inventor: Shinzo Onishi
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Patent number: 6613199Abstract: A hollow cathode magnetron comprises an open top target within a hollow cathode. The open top target can be biased to a negative potential so as to form an electric field within the cathode to generate a plasma. The magnetron uses at least one electromagnetic coil to shape and maintain a density of the plasma within the cathode. The magnetron also has an anode located beneath the cathode. The open top target can have one of several different geometries including flat annular, conical and cylindrical, etc.Type: GrantFiled: October 25, 2001Date of Patent: September 2, 2003Assignee: Novellus Systems, Inc.Inventors: Jeffrey A. Tobin, Jean Qing Lu, Thomas Mountsier, Hong Mei Zhang
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Publication number: 20030155236Abstract: An object of the present invention is to alter the shape of the magnetic field with ease in the state of auxiliary magnet poles being disposed in a sputtering apparatus.Type: ApplicationFiled: February 11, 2003Publication date: August 21, 2003Inventors: Toshimitsu Kohara, Koichiro Akari
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Publication number: 20030150721Abstract: A source of sputtered deposition material has, in one embodiment, a torus-shaped plasma generation area in which a plasma operates to sputter the interior surface of a toroidal cathode. In one embodiment, the sputtered deposition material passes to the exterior of the source through apertures provided in the cathode itself. A torus-shaped magnetic field generated in the torus-shaped plasma facilitates plasma generation, sputtering of the cathode and ionization of the sputtered material by the plasma.Type: ApplicationFiled: February 11, 2002Publication date: August 14, 2003Applicant: Applied Materials, Inc.Inventor: Mark A. Perrin
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Patent number: 6605198Abstract: An electrical field between a positive anode and a negative target in a cavity and a magnetic field in the cavity cause electrons from the target to ionize neutral gas (e.g. argon) atoms in the cavity. The ions cause the target to release sputtered atoms (e.g. aluminum) for deposition on a substrate. A shield between the target and the substrate inhibits charged particle movement to the substrate. The anode potential may be positive, and the shield and the magnetic members may be grounded, to obtain electron movement to the anode, thereby inhibiting the heating of the shield and the magnetic members by electron impingement. The anode may be water cooled. The magnitude of the positive anode voltage relative to the target voltage provides selectively for (a) a uniform thickness of sputtered atoms on the walls of a groove in the substrate or (b) a filling of the groove by the sputtered atoms and a uniform thickness of deposition on the substrate surface including the filled groove.Type: GrantFiled: November 29, 1995Date of Patent: August 12, 2003Assignee: Sputtered Films, Inc.Inventors: Peter J. Clarke, Andrew P. Clarke
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Patent number: 6589408Abstract: A non-planar target can be configured for use in a plasma vapor deposition (PVD) process in which ions bombard the non-planar target and cause alloy atoms present in the non-planar target to be knocked loose and form an alloy film layer. The target includes a top planar section having a first alloy concentration and a side annular section having a second alloy concentration. The side annular section has ends coupled to ends of the top planar section. The first alloy concentration and the second alloy concentration are different.Type: GrantFiled: March 27, 2002Date of Patent: July 8, 2003Assignee: Advanced Micro Devices, Inc.Inventors: Pin-Chin Connie Wang, Paul R. Besser, Sergey D. Lopatin, Minh Q. Tran
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Publication number: 20030094365Abstract: Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic fiType: ApplicationFiled: November 15, 2002Publication date: May 22, 2003Applicant: FTS CORPORATIONInventors: Sadao Kadokura, Hisanao Anpuku
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Publication number: 20030066748Abstract: A system and method for sputter depositing a protective coating on a surface. The system includes a coating device, a first material for coating, a second material for coating and a surface to be coated. Preferably, the first material and the second material are sputter deposited on the surface in a predetermined proportion to yield a coating having tailored thermophysical and surface resistance properties. The proportion may be controlled by controlling exposed surface area of the first material and exposed surface area of the second material, as well as a magnetic field applied to the first and second materials.Type: ApplicationFiled: October 4, 2001Publication date: April 10, 2003Inventors: William D. Gilmore, Richard M. Kurland
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Publication number: 20030019740Abstract: For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.Type: ApplicationFiled: September 25, 2002Publication date: January 30, 2003Applicant: Unaxis Balzers AktiengesellschaftInventors: Pius Gruenenfelder, Hans Hirscher, Urs Schwendener, Walter Haag
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Patent number: 6497803Abstract: Apparatus for creating subatmospheric high plasma densities in the vicinity of a substrate in a work space for use in magnetron sputter deposition aided by ion bombardment of the substrate. Unbalanced flux lines emanating from cylindrical or frusto-conical targets cannot be captured across the work space, because the energizing magnets are cylindrical, and instead converge toward the axis of the apparatus to provide a high flux density, and therefore a high plasma density, in the vicinity of a substrate disposed in this region. The plasma profile and the coating material profile within the work space are both cylindrically symmetrical, resulting in a consistent and predictable coating on substrates.Type: GrantFiled: March 13, 2001Date of Patent: December 24, 2002Assignee: Isoflux, Inc.Inventors: David A. Glocker, Mark M. Romach
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Patent number: 6497796Abstract: A magnetron source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity. Step coverage uniformity is also improved by controlling the magnetic fields, and thus the flow of ions and electrons, near the plane of the substrate.Type: GrantFiled: August 31, 2000Date of Patent: December 24, 2002Assignee: Novellus Systems, Inc.Inventors: Kaihan A. Ashtiani, Karl B. Levy, Kwok F. Lai, Andrew L. Nordquist, Larry D. Hartsough
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Publication number: 20020189938Abstract: A system and method for performing sputter deposition includes at least one ion source that generates at least one ion current directed at first and second targets, at least one electron source that generates at least one electron current directed at the first and second targets, and circuitry that biases the first and second targets with independent first and second DC voltage pulse signals. A first current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the first target during one or more cycles of the first DC voltage pulse signal, and a second current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the second target during one or more cycles of the second DC voltage pulse signal. A controller, coupled to the first and second current sensors, varies the at least one ion current independently from the at least one electron current.Type: ApplicationFiled: May 2, 2002Publication date: December 19, 2002Applicant: 4Wave, Inc.Inventors: David Alan Baldwin, Todd Lanier Hylton
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Publication number: 20020175069Abstract: An apparatus for forming an electrode for a lithium secondary cell capable of readily forming an active material layer constituted by at least two elements and controlling the composition of the active material layer is obtained. The apparatus for forming an electrode for a lithium secondary cell comprises a first sputtering source for sputtering a first material forming the active material layer onto the surface of the collector and a second sputtering source for sputtering a second material forming the active material layer onto the surface of the collector. Plasma regions of the first and second sputtering sources are arranged to overlap with each other. Thus, the active material layer constituted by at least two elements is readily formed with excellent reproducibility. When power applied to the first sputtering source and the second sputtering source is controlled independently of each other, the composition of the active material layer constituted by at least two elements is readily controlled.Type: ApplicationFiled: April 16, 2002Publication date: November 28, 2002Applicant: Sanyo Electric Co., Ltd.Inventors: Yoichi Domoto, Hisaki Tarui, Hiromasa Yagi