Abstract: A target and magnetron for a plasma sputter reactor and the associated sputtering method provided by the extended magnetic fields and plasma regions. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault, some of which may rotate along the vault, create a magnetic field in the vault to support a plasma extending over a large volume of the vault from its top to its bottom. The large plasma volume increases the probability that the sputtered metal atoms will become ionized and be accelerated towards an electrically biased wafer support electrode.

Abstract: A device and method has a magnetron sputter source with a multipart target (3, 4) and movable magnet system (5). By variation of the power delivery of the power supply (6), specific areas of the multipart target (3, 4) can be preferably affected, which permits setting the stoichiometry of the sputtered-off target materials on the substrate (15) to be covered and positively affecting the homogeneity of the layer structure.

Abstract: A PVD system comprises a hollow cathode magnetron with a downstream plasma control mechanism. The magnetron has a hollow cathode with a non-planar target and at least one electromagnetic coil to generate and maintain a plasma within the cathode. The magnetron also has an anode located between the cathode and a downstream plasma control mechanism. The control mechanism comprises a first, second and third electromagnetic coil beneath a mouth of the target, vertically spaced so as to form a tapered magnetic convergent lens between the target mouth and a pedestal of the magnetron.

Abstract: A focused magnetron sputter system includes a processing chamber, a plurality of sputter sources arranged within the processing chamber, a substrate holder disposed above the plurality of sputter sources, a rotational shutter arranged between a substrate and the plurality of sputter sources for selectively forming a coating on the substrate, and a power supply connected to the substrate holder for supplying a substrate bias.

Abstract: A sputtering device is provided in which at least one target is sputtered by sputtering discharge to produce a film of target material on at least the first surface of a substrate. The sputtering device has a principal rotating mechanism that rotates the at least one target about an axis of revolution coaxial with the central axis of the substrate. The target is positioned offset from and circumferential to the central axis of the substrate coaxial with the axis of revolution. A magnet mechanism for magnetron discharge of the sputtering discharge forms a magnetic field asymmetrical to a central axis of the target and is rotated by an auxiliary rotating mechanism. The principal rotating mechanism integrates rotation of the targets with the magnet mechanism.

Abstract: A magnetron sputter coating vacuum processing system has a magnetron cathode that includes a frusto-conical target having a cone-shaped magnet assembly that causes the erosion rate to be highest under a main magnetic tunnel at an intermediate radius or the centerline of the target when the target is uneroded, with the location of the highest erosion rate gradually shifting to two areas as the target erodes, one being an inner at radii less than that of the target centerline and one being an outer area at radii greater than the target centerline. As a result, the target erosion tends to be equalized over the target area during the life of the target, improving target utilization. The magnet assembly includes three magnet rings, including an inner ring and an outer ring having poles magnetically connected by a yoke, which rings form a main magnetic tunnel. The polar axis of the inner ring is parallel to the target surface, and the polar axis of the outer ring is perpendicular of the target surface.

Abstract: A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Abstract: A novel hollow cathode magnetron source is disclosed. The source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity.

Abstract: A hollow cathode magnetron for sputtering target material from the inner surface of a target onto an off-spaced substrate. The magnetron is in the shape of a truncated cone, also known as a conical frustum. The target cone is backed by a conical cathode maintained at a predetermined voltage for attracting gas ions into the inner surface of the target cone to sputter material therefrom. The sputtering plasma is made uniform over the entire surface of the target by assuring that the magnitude of the component of the magnetic field tangent to the target surface is constant. The plasma is further confined to the vicinity of the target by using electrostatic elements. Sputter coatings on planar substrates can achieve areal thickness nonuniformities of less than +/−0.2%.

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.

Abstract: A PVD system comprises a hollow cathode magnetron with a capability of producing a high magnetic field for PVD and a low magnetic field for pasting. The high magnetic field is used for PVD and causes an optimal uniform film to form on a substrate but redeposits some metals onto a top portion of a target within the magnetron. The low magnetic field erodes redeposited materials from a top portion of a target within the magnetron.

Abstract: A PVD system comprises a hollow cathode magnetron with a downstream plasma control mechanism. The magnetron has a hollow cathode with a non-planar target and at least one electromagnetic coil to generate and maintain a plasma within the cathode. The magnetron also has an anode located between the cathode and a downstream plasma control mechanism. The control mechanism comprises a first, second and third electromagnetic coil beneath a mouth of the target, vertically spaced so as to form a tapered magnetic convergent lens between the target mouth and a pedestal of the magnetron.

Abstract: A sputtering device that efficiently guides sputtering particles ejected from a target to a film deposition subject and prolongs the interval at which a stick preventive member requires replacement. The sputtering device 1 has a vacuum chamber in which a specified sputtering target is placed so as to face a substrate 4 that is also placed in the vacuum chamber 2, and deposits a film on a surface of the substrate 4 using sputtering particles 20 ejected from the sputtering target 6; and particle ejection sections 60 constructed so as to slope at a specified angle of 30° to 60° with respect to the surface of the substrate 4, and respectively facing each other in the shape of a funnel are provided on the sputtering target 6. Lines of magnetic force 13 run from an N pole of a magnet 7a arranged at a rear surface of the target 6 to an S pole of a magnet 7b arranged around the target 6.

Abstract: The present invention is directed to a sputtering device for depositing multi-layer films on a substrate, the sputtering device comprising at least one planar-magnetron-sputtering-cathode and at least one facing-targets-sputtering-cathode housed in a single vacuum chamber, and adapted such that each planar-magnetron-sputtering-cathode and facing-targets-sputtering-cathode can be selectively positioned for sputtering deposition onto a substrate

Abstract: A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well.

Abstract: Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.

Abstract: A sputter deposition apparatus and method includes perimeter magnets oriented an angle relative to the plane of the sputter target, either by magnetizing or by physically orienting the magnets at the chosen angle. The resulting magnetic flux extends radially outward, away from the central axis of the target, toward and beyond the target perimeter. This causes the return path of the flux to pass over the target surface more parallel to the plane of its sputtering surface. This spreads sputter erosion over a greater area of the target surface and mitigates development of sputtering grooves. Since target erosion is more uniform, more target material is used for sputter deposition, deterring waste. Each target can be used longer before the target material is penetrated, resulting in fewer target replacement cycles for a given volume of workpiece coating, raising the deposition chamber capacity factor.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. In one embodiment, a chamber having one or more current return plates, a support member, an electromagnetic field generator and a support member is provided. The target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. During processing, a bias is applied to the support member by an RF power source. The return plates are selectively energized to provide a return path for the RF currents, thereby affecting the orientation of an electric field in the chamber.

Abstract: A cross flow system for metalizing compact discs, capable of being interposed in-line in the production of the compact discs after premastering, mastering, electro-forming, and molding includes a vacuum chamber having diametrically opposed vacuum locks and multiple metalization sources in the form of magnetrons, with a preferred cross flow including the introduction of a disc to be metalized through one lock and the exit of the metalized disc through the diametrically opposite lock. The double vacuum lock diametrically opposed cross flow system eliminates the problems of throughput limitations, high rate deposition, substrate pitting, and software complexity due to indexing which makes prior systems both costly and inefficient. The system also permits processing of more than one substrate or compact disc title such that multiple titled compact discs can be processed simultaneously.

Abstract: The uniformity, density and directionality of an ionized metal plasma is significantly improved by positioning a cylindrical target between an RF coil and the chamber wall and wafers above and below the coil at opposite ends of the sputtering chamber. Ions generated by electron impact are attracted to the biased substrates, thereby providing essentially void free interconnections through insulating layers having through holes with very high aspect ratios.

Abstract: Two mutually opposite sputtering surfaces of at least one target are self-enclosed such that a closed loop gap, and consequently a closed loop plasma discharge space, is formed. A gas flow is created between the sputtering surface and directed against workpieces. No gap ends exist on the closed loop gap so that electrons that move along and within the plasma loop can recirculate until most of their energy has been transferred through impacts to the gas particles.

Abstract: Apparatus for creating subatmospheric high plasma densities in the vicinity of a substrate in a work space for use in magnetron sputter deposition aided by ion bombardment of the substrate. Unbalanced flux lines emanating from cylindrical or frusto-conical targets cannot be captured across the work space, because the energizing magnets are cylindrical, and instead converge toward the axis of the apparatus to provide a high flux density, and therefore a high plasma density, in the vicinity of a substrate disposed in this region. The plasma profile and the coating material profile within the work space are both cylindrically symmetrical, resulting in a consistent and predictable coating on substrates.

Abstract: An apparatus for forming a multilayer film on a substrate surface comprises a multi-target sputtering source having a planar end face adapted for rotation about a central axis and including at least a pair of independently operable planar magnetron cathodes having sputtering targets composed of different materials, and a substrate mounting means for providing a stationary substrate in spaced-apart, facing relation to the sputtering source. According to the inventive method, the multi-target source is rotated about its central axis while the substrate is maintained stationary, thereby depositing a multi-layer film stack on the substrate. The invention finds particular utility in the formation of superlattice structures usable as recording medium layers in the fabrication of magnetic and magneto-optical (MO) data/information storage and retrieval media.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. The nested magnets are rotated along the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

Abstract: Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from an annular magnetron sputtering target. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Faraday type shields physically shield the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target to wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls.

Abstract: A mirrortron sputtering apparatus for sputtering on a substrate includes a vacuum chamber for placing therein a pair of targets spaced apart from each other with inner surfaces thereof facing each other and outer surfaces thereof positioned opposite to the inner surfaces, and magnets respectively disposed closer to the outer surfaces of the targets for forming a magnetic field between said pair of targets. The magnetic field has a magnetic field distribution with a peripheral region having a high magnetic flux density and a center region having a low magnetic flux density. In this arrangement, the substrate is set alongside a space between the pair of targets as facing said magnetic field.

Abstract: A sputter deposition apparatus and method having a sputtering target that is tilted and a shield that intercepts particles that may fall from the target so that the particles do not deposit on the workpiece. The invention permits the workpiece to be oriented horizontally. More specifically, the sputtering target is mounted higher than the workpiece position and is oriented at an angle of 30 to 60 degrees relative to the vertical axis. The shield occupies an area such that any vertical line extending vertically downward from the front surface of the target to a point on the workpiece intersects the shield above said point.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls.

Abstract: A plasma chamber in a semiconductor fabrication system improves the uniformity of a high density plasma by optimizing a ratio of RF power from a first coil, surrounding and inductively coupled into the high density plasma, to RF power from a second coil, positioned above a central region and inductively coupled into the high density plasma. It has also been found that an increase in RF power supplied to the second coil positioned above the central region relative to RF power suppled to the first coil surrounding the high density plasma tends to increase the relative density of the plasma toward the center of the high density plasma. It is believed that RF power supplied to the second coil positioned above the central region substrate tends to add more electrons into the central region of the high density plasma to compensate for electrons recombining with plasma ions.

Abstract: The invention provides a sputtering system which consists of an ion beam and a target of a sputterable material. A distinguishing feature of the system of the invention is that the sputtering target forms a guide channel for an ion beam and sputtered particles, so that a portion of the ions collides with the walls of the target inside a closed volume of the target and forms neutral sputterable particles impinging the object. The other part of the ions goes directly to the object and participates in an ion-assisted overcoating. Thus, the special form of the target improves efficiency of sputtering, prevents scattering and the loss of the sputterable material. The system can be realized in various embodiments. One of the embodiments provides a multiple-cell system in which each cell has an individual ion-emitting slit formed by the end of a cathode rod of one cathode plate and the opening in the second cathode plate.

Abstract: A hollow cathode magnetron for sputtering target material from the inner surface of a target onto an off-spaced substrate. The magnetron is in the shape of a truncated cone, also known as a conical frustum. The target cone is backed by a conical cathode maintained at a predetermined voltage for attracting gas ions into the inner surface of the target cone to sputter material therefrom. The inner surface of the cone is bounded at its inner and outer edges by magnetic pole pieces orthogonal to and extending inwardly and outwardly of the cone surface. The magnetic path is completed by a conical magnet surrounding the target and conical electrode and magnetically connected to the pole pieces to form a magnetic cage. Lines of magnetic flux extending above the target surface between the pole pieces are substantially parallel with the target surface, providing uniform erosion over the entire surface.

Abstract: An apparatus for sputtering material onto a workpiece, composed of: a chamber; a first target disposed in the chamber for sputtering material onto the workpiece; a holder for holding the workpiece in the chamber; a plasma generation area between the target and the holder; a coil for inductively coupling energy into the plasma generation area for generating and sustaining a plasma in the plasma generation area; and a second target disposed in the chamber below the first target and above the coil for sputtering material onto the workpiece.

Abstract: An improved unbalanced magnetron sputtering (UMS) apparatus in accordance with the invention having a conventional target and arrangement of magnets wherein a central portion of the target is backed by a first magnetic pole and the peripheral portion of the target is backed by a second magnetic pole, the poles carrying unequal numbers of lines of magnetic flux. One of the poles has a greater number of flux lines entering or leaving than does the other pole. The field lines extending from the higher flux pole which do not close in the lower flux pole extend into space in a range of directions and generally toward a substrate to be sputter coated. Adjacent the target and electrically isolated therefrom and overlying the higher flux pole is an independently-controllable auxiliary electrode, preferably a cathode, formed of a non-ferromagnetic material and having a surface facing in the same general direction as the sputterable surface of the target.

Abstract: A sputtering device enabling a small incident angle. A plurality of shield plates provided with holes at the same positions as targets are arranged in a vacuum chamber. Sputtering particles ejected diagonally from the targets 51-59 become attached to the shield plates 21-23 and only particles ejected vertically reach the surface of a substrate 12. As a result, it is possible to uniformly form a thin film inside microscopic holes of high aspect ratio. If sputtering gas is introduced close to the targets 51-59, reactant gas is introduced close to the substrate 12 and evacuation carried out close to the substrate 12, reactant gas does not reach the targets 51-59 side. Consequently, it is possible to prevent deterioration of the surfaces of the targets 51-59.

Abstract: Magnetic field lines within a hollow cathode magnetron sputtering device are modified by various means to improve the full-face erosion profile of the hollow cathode target. These means include, varying the magnetic field of the main magnetic source, extending the magnetic field beyond the opening in the hollow cathode and adding a stationary or mobile magnetic field source adjacent to the closed end surface of the hollow cathode target. The present invention employs various embodiments which when implemented individually or in combination improve the full face erosion of a target cathode in a hollow cathode magnetron sputtering source.

Abstract: In a sputtering device with magnetic amplification, a magnetic field is generated by means of a permanent magnet system, whose lines of force run above and penetrate the sputtering surface, whereby the permanent magnet system is formed of two dosed, coaxial circular or oval rows (7, 8) of individual magnets (5, 5′ . . . , 6, 6′ . . . ) that are connected via a yoke (15), whereby the surface of the target (3) that faces away from the rows of permanent magnets (7, 8) is formed of two partial surfaces (3a, 3b) that form an angle to each other and whereby the edge (3c) that is formed by the two partial surfaces (3a, 3b) runs parallel to the two rows (7, 8) of permanent magnets (5, 5′ . . , 6, 6′ . . . ) and whereby an insert (14) made of ferromagnetic material is inserted between the magnetic yoke (15) and the surface of the target (3) that faces the magnetic yoke (15).

Abstract: A hollow cathode magnetron (HCM) sputter source includes a main magnet positioned near the sidewall of the hollow cathode target and a pair of rotating magnet arrays that are positioned near the closed end of the hollow cathode target. One of the arrays produces a magnetic field that is aligned with (aids) the magnetic field produced by the main magnet; the other arrays produce a magnetic field that is aligned against (bucks) the magnetic field produced by the main magnet. Field lines produced by the magnet arrays contain an extension of the plasma that is controlled by the main magnet. Charged particles circulate between the two portions of the plasma. The extended plasma is thus formed over a very high percentage of the surface of the target, thereby creating an erosion profile that is highly uniform and encompasses essentially the entire face of the target. This maximizes the utilization of the target and minimizes the frequency at which the spent target must be replaced.

Abstract: An electro-magnet array for use in a sputtering apparatus. The array has a magnetisable core member extending substantially horizontally and having magnetisable outward projections arranged as at least two pairs of symmetrically opposed projections projecting outwardly from the core member. A pole member is associated with each projection and vertically displaced with respect thereto. A magnetisable coupler is arranged to couple each pole piece magnetically to its respective projection. A magnetising coil around each projection is arranged for producing a magnetic field aligned substantially with a horizontal axis of symmetry of its respective projection in dependence upon the direction of flow of electric current through the magnetising coil.

Abstract: A novel hollow cathode magnetron source is disclosed. The source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity.