Abstract: A method is provided for coating substrates with at least one cathode assembly having a rotatable target, the rotatable target being provided with at least one magnet assembly positioned there within. The method includes providing a potential difference between the substrate and the rotatable target that is varied over time during coating. Further, the method may include positioning the magnet assembly with respect to the rotatable target so that the magnet assembly is asymmetrically aligned with respect to a plane perpendicularly extending from the substrate to the axis of the rotatable target for a predetermined first time interval. The magnet assembly is then moved to a second position that is also asymmetrically aligned. Further, a coater for coating substrates is provided including a cathode assembly with a rotatable curved target and two magnet assemblies positioned within the rotatable curved target.

Abstract: The disclosure concerns a magnet arrangement for a target backing tube for a rotatable target of a sputtering system, the magnet arrangement having a longitudinal axis and a circumferential direction around the longitudinal axis, and being adapted for an arrangement in a cylindrical backing tube, wherein the magnet arrangement comprises in a circumferential sequence: a first magnet element extending in parallel to the longitudinal axis, a second magnet element extending in parallel to the longitudinal axis, and a third magnet element extending in parallel to the longitudinal axis, wherein each magnet element has a center axis extending in a radial direction, wherein the angular distance between the first and the third magnet elements, with respect to their center axis, is less than about 85 degrees. The disclosure also concerns a cylindrical target assembly and at least one target cylinder disposed around the target backing tube.

Abstract: The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is located in the bearing housing for sealing the drive shaft to the housing. An at least one electrical contact is disposed between a power source and the cathode for transmittal of an oscillating or fluctuating current to the cathode. The electrical contact between the power source and the cathode is disposed inside of the vacuum chamber, greatly reducing, and almost eliminating, the current induced heating of various bearing, seals, and other parts of the rotatably sputter cathode assembly.

Abstract: An exemplary magnetron sputtering device includes a target, a magnet arrangement, and a driving system. The target defines a magnet-receiving space therein. The magnet arrangement is received within the magnet-receiving space. The driving system is configured for driving the magnet arrangement to spin and move back and forth.

Abstract: A method and apparatus for depositing a coating material on a surface of a substrate by an ion plasma deposition process using a hollow cathode is disclosed. The cathode may be a substantially cylindrical hollow cathode. A plasma arc is formed on the outer circumference of the cathode to remove coating material from the cathode, which is then deposited on a surface of a substrate. An internal arc drive magnet is contained within the hollow bore of the cathode and cooling is provided to the magnet during operation.

Abstract: An end-block for electrically energising a rotatable tubular target in a vacuum coating installation is disclosed. The end-block has a rotary electrical contact that reduces the joule heating effects when operating in alternating current mode. When compared to known end-blocks, this is achieved by increasing the number of contact areas between a contacting ring and a series of circumferentially mounted contacting shoes. Also the contact shoes are being pressed radially outwardly by means of resilient elements against the contacting ring.

Abstract: A method and device for magnetron sputtering are provided. A magnetron coating system includes a first coating source and an auxiliary substrate arranged between the first coating source and an area into which a substrate to be coated is to be received. The system also includes a magnetron having a cathode composed of the auxiliary substrate. Additionally, the system includes a device structured and arranged to determine an area density of the auxiliary substrate.

Abstract: An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.

Abstract: A dual magnetron for plasma sputtering in which two distinctly different magnetrons are mounted on a common plate rotating about a central axis in back of a target. At least one of the magnetrons is switched on and off by changes in chamber pressure or target power while the other magnetron, if it does switch, switches in complementary fashion. When the two magnetrons are mounted at different radii, the switching effects a effective movement of the magnetron such that different areas of the target are exposed to a sputtering plasma. In particular, a small unbalanced magnetron may scan the target edge to produce a highly ionized sputter flux and a larger magnetron positioned near the center can be switched on to clean sputter material redeposited on the target center.

Abstract: Certain example embodiments relate to sputtering target backing tube that are slightly ferromagnetic, thereby providing small-scale shunting that reduces the occurrence or magnitude of short-range magnetic field deviations during magnetron sputtering with cylindrical sputtering targets. For example, backing tube allows may be carefully optimized to be somewhat ferromagnetic, thereby enhancing the uniformity of the magnetic field generated by the magnet bar. In certain example embodiments, short range magnetic field deviations may be reduced to less than about 5% from average, more preferably less than about 2% from average, and still more preferably less than about 1% from average. Such short range magnetic field deviation reducing target backing tubes may be used in along with, or in place of, shims or shunts that address long range magnetic field deviations.

Abstract: A sputter coating system comprises a vacuum chamber, means for generating a vacuum in the vacuum chamber, a gas feed system attached to the vacuum chamber, a gas plasma forming system attached to the vacuum chamber, a system for confining and guiding a gas plasma within the vacuum chamber, and a prism-shaped sputter target assembly, with the material to be sputtered forming at least the outer surface of the target assembly and positioned such that the outer surface is surrounded by the plasma within the vacuum chamber. A negative polarity voltage is applied to the surface of the material such that sputtering occurs.

Abstract: The invention relates to a method for operating a magnetron sputter cathode, in particular a tube cathode or several tube cathodes forming an array. In such cathodes a target passes through a magnetic field, whereby induction currents flow in the target which distort the magnetic field. This results in the nonuniform coating of a substrate. By having the relative movement between magnetic field and target alternately reverse its direction, the effect of the magnetic field distortion can be compensated. This yields greater uniformity of the coating on a substrate to be coated.

Abstract: A sputtering device includes at least: a vacuum container defining a vacuum space; a substrate holder installed rotatably in the vacuum space; a substrate installed on the substrate holder; a target for forming thin film on the substrate; and a rotatable sputtering cathode in which the target is installed. The sputtering cathode is slanted relative to the substrate, and a center of the target is eccentric to a rotation axis of the sputtering cathode.

Abstract: A sputtering target includes an outer target tube, an inner support tube supporting a magnet carrier bar extending along substantially the entire length of the inner support tube; and a water cooling circuit including at least one passageway within the inner support tube with an inlet at one end thereof adapted to receive cooling water from an external source, at least one outlet aperture at an opposite end thereof opening to a cooling plenum radially between the inner support tube and the outer target tube; and a baffle comprising a substantially flat plate attached to the inner support tube adjacent the opposite end, the plate extending radially within the plenum between the inner support tube and the outer target tube and having an array of flow apertures therein.

Abstract: This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source. A deposition process step is performed in which metal vapor is produced from a target of a PVD source. Location and sputter efficiency at the target surface is enhanced by moving a magnet pack to create a traveling or sweeping magnetic field envelope. The target is energized from a DC power supply and pressures effective for an efficient thermalization of the sputtered atoms (30<p<100 mTorr) are maintained in the chamber during deposition. A uniform thickness of the metal on the wafer is produced within each magnet sweeping cycle.

Abstract: A method for depositing a coating using a magnetron sputtering apparatus and a magnetron sputtering apparatus comprising: a support structure comprising a hollowed shaft comprising a central conduit having a longitudinal axis; a sputter target material defining a bore which is external to the central conduit, the bore also having the longitudinal axis a magnet assembly supported about the support structure, the magnet assembly having a first end, a second end, and a plurality of magnets supported therebetween and being effective, upon rotation, to generate a circumferential external magnetic field about the sputter target material; a first sealed end extending radially inward from adjacent the sputter target material proximate the first end of the magnet assembly and a second sealed end extending radially inward from adjacent the sputter target material proximate the second end of the magnet assembly, wherein the first sealed end, the second sealed end, and the sputter target material seal the magnet assembly

Abstract: A generally rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron includes a closed plasma loop formed in a convolute shape, for example, serpentine or rectangularized helix with an inner pole of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole having the opposed polarity.

Abstract: A magnetron arrangement includes an end block, which has a target fastening device for rotatable coupling of a tubular target, a holding device for a magnet system arranged in the interior of the tubular target and a shield, which covers the end of a tubular target mounted in the target fastening device. An area of the shield covering the end of the tubular target is configured, so that an annular gap remaining between the target support tube and the shield, viewed from the outside, has at least one radially outward-leading section.

Abstract: A sputtering target comprising an outer target tube, an inner support tube supporting a magnet carrier extending along substantially the entire length of the inner support tube; and a water cooling circuit including at least one passageway within the inner support tube with an inlet at one end thereof adapted to receive cooling water from an external source, at least one outlet aperture at an opposite end thereof opening to a cooling chamber radially between the inner support tube and the outer target tube; and a plurality of spiral vane segments attached to an outer surface of the inner support tube.

Abstract: The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is located in the bearing housing for sealing the drive shaft to the housing. An at least one electrical contact is disposed between a power source and the cathode for transmittal of an oscillating or fluctuating current to the cathode. The electrical contact between the power source and the cathode is disposed inside of the vacuum chamber, greatly reducing, and almost eliminating, the current induced heating of various bearing, seals, and other parts of the rotatably sputter cathode assembly.

Abstract: A method for fabricating semiconductor wafers using physical vapor deposition. The method includes maintaining a substrate on a susceptor in a chamber. The substrate has a face positioned within a vicinity of a target material, which is within the chamber. The target member comprises a first side and a second side. Preferably, the first side is positioned toward the face of the substrate. The method includes operating a magnet device fixed about a rotating member, which is coupled to the chamber and is coupled to a drive motor, which is coupled to a driver. A magnet device is positioned from a center region of the rotating member by a predetermined dimension. The method includes moving the magnet device in an annular manner about the center region using the rotating member. The magnet device is rotated at a velocity v and influences a spatial region, which is positioned overlying the second side of the target.

Abstract: A method for fabricating semiconductor wafers using physical vapor deposition. The method includes maintaining a substrate on a susceptor in a chamber. The substrate has a face positioned within a vicinity of a target material, which is within the chamber. The target member comprises a first side and a second side. Preferably, the first side is positioned toward the face of the substrate. The method includes operating a magnet device fixed about a rotating member, which is coupled to the chamber and is coupled to a drive motor, which is coupled to a driver. A magnet device is positioned from a center region of the rotating member by a predetermined dimension. The method includes moving the magnet device in an annular manner about the center region using the rotating member. The magnet device is rotated at a velocity v and influences a spatial region, which is positioned overlying the second side of the target.

Abstract: An in-situ plasma cleaning device (PCD) performs an atomic surface cleaning process to remove contaminants and/or to modify the cylindrical surfaces of both the target and substrate. The atomic cleaning process utilizes a plasma generated locally within the in-situ plasma cleaning device with suitable properties to clean both the target and substrate cylindrical surfaces either concurrently or separately. Moreover, the in-situ plasma cleaning device is designed to traverse the length of the target and the substrate cylindrical surfaces during the cleaning process.

Abstract: The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a power source which supplies positive and negative charge, and a gas distribution system. The gas distribution system may comprise a simple perforated gas delivery member, or it may comprise a perforated gas delivery member with an attached conductive anodic surface. The gas delivery member may also contain an inner conduit with further perforations which serves to baffle flow of the sputtering gas. Gas flow may be regulated within discrete portions of the gas distribution system. The anodic surfaces of the gas distribution system are cleaned through the action of plasma and gas flow, creating a more stable plasma and reducing the need for maintenance.

Abstract: A sweeping linear magnetron is described. The magnetron has a cathode backing plate, a drive housing attached to the cathode backing plate and a motor held in the drive housing. The motor drives a yoke positioned within a cut-out in the backing plate. The yoke has a magnet pack attached thereto said yoke such that the magnet pack is adapted to being moved over a target material and wherein the target material is being sputtered within a vacuum chamber onto a substrate.

Abstract: A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

Abstract: A cylindrical magnetron capable of running at high current and voltage levels with a target tube that is self cleaning not only in the center portion, but also at the ends. Sputtering the ends of the target tube virtually eliminates accumulation of condensate at the ends and any resultant arcing, resulting in a more reliable magnetron requiring less service and a magnetron that produces more consistent coatings.

Abstract: A cylindrical magnetron target and spindle attachment apparatus for affixing a cylindrical magnetron target to a rotatable support spindle. The attachment apparatus includes a target and a spindle. The target defines a receiving portion. The spindle has a spindle plug. The spindle plug is disposed within the receiving portion of the target. The attachment apparatus increases the speed and ease of removing and installing cylindrical rotating targets onto a support spindle.

Abstract: The present invention provides a magnetic neutral line plasma discharge processing system that makes it no longer necessary to use an insulator wall in the vacuum chamber and metal such as stainless steel may alternatively be used, while maintaining the features including both time/space and space controllability relative to the size and the location of low pressure, low temperature and high density plasma to be generated. Thus, the cost of the system can be reduced remarkably. As a result, the scope of application of discharge plasma systems can be broadened.

Abstract: An array of auxiliary magnets is disclosed that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

Abstract: A magnet assembly for producing a varying magnetic field is provided wherein a plurality of permanent magnets are interposed between two members which are constructed of a ferromagnetic material. Each of the magnets is rotatable and has a north and south magnetic pole. Each of the magnets is disposed so that the north magnetic poles of the plurality of permanent magnets have a common magnetic orientation with respect to the first member. An orienter, such as, for example, a ring gear and pinion arrangement, is coupled to the magnets to change their common magnetic orientation with respect to the first member. The magnetic field projected by the assembly varies as a function of the orientation of the magnets.

Abstract: A high-power ion sputtering magnetron having a rotary cathode comprising a conducting member disposed within the rotary cathode being made of an electrically conductive material for conducting electrical current from the power supply to the rotary cathode. The ion sputtering magnetron also has an electromagnetic field shield disposed between the conducting member and the drive shaft portion. The field shield is made of an electromagnetic field-permeable material such as a ferrous material for reducing damage to parts adjacent to the conducting member that are susceptible to inductive magnetic heating.

Abstract: A magnetron system for a sputtering target having an annular vault facing the wafer to be coated and having inner and outer sidewalls and a roof. A small magnetron is positioned over the roof. A first magnet assembly having a first magnet polarity along the target axis is positioned behind the inner sidewall. A second magnet assembly having an opposed second opposed magnetic polarity is disposed in back of the outer sidewall and has magnetic strength much greater than the first magnet assembly but its strength is asymmetrically distributed about the target axis. The second magnet assembly and the roof assembly are rotated together about the target axis. The rotating asymmetric sidewall magnet assembly may also be used with a hollow-cathode target, with or without a roof magnetron.

Abstract: A system and method for reducing and controlling the number of defects due to carbon inclusions on magnetic media is disclosed. A diamond like carbon protective layer is deposited on magnetic media using a rotary cathode target assembly. The target and cathode are cylindrical in shape and are mounted on holder that allows the target and cathode to rotate while holding a magnet fixed. The target surface is periodically swept in through a plasma which sputters off the surface of the target. This prevents the build up of redeposited material on the target and consequently keeps the target surface cleaner. The reduction of redeposited material on the target surface reduces the number of unwanted particulates which are ejected from the surface, manifesting themselves as disk defects.

Abstract: A magnetic control oscillation-scanning sputter includes a sputtering target, a base and an elongated magnet. The sputtering target has a surface with a target located thereon corresponding to the base. The target being sputtered is deposited on the base. The elongated magnet is located on the rear side of the sputtering target and moved reciprocately to control the deposition of the target. The elongated magnet has two ends each which is coupled with a magnetic erasing means for reducing excessive magnetic field intensity at the two ends to avoid affecting the sputter quality.

Abstract: A tube target for cathode sputtering installations, and a process for producing a cylindrical hollow body for such a tube target and its use. The problem of providing a simple and low-cost process for producing a cylindrical hollow body for a tube target and of providing a cylindrical hollow body with a uniform, fine-grained structure is solved by the cylindrical hollow body being produced by centrifugal casting of a melt.

Abstract: A sputtering magnetron arrangement is disclosed, comprising a magnetic field generator (1) and a target (4) which is associated with said magnetic field generator (1). The magnetic field generator (1) includes a magnetically active element (5-9) and an adjusting means (20-25) which is adapted to deform or deflect locally the magnetically active element (5-9) so as to alter with respect to the target (4) the position of at least a portion of the magnetic field generator (1).

Abstract: A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.

Abstract: A cylindrical target having a cylindrical backing tube and hollow cylindrical target material disposed on an outer circumference of the cylindrical backing tube. The backing tube and the target material are joined via an electroconductive felt present beteween the backing tube and the target material.

Abstract: The invention provides methods and equipment for depositing films. In certain embodiments, there is provided a deposition chamber having a substrate-coating region and an electrode-cleaning region. In these embodiments, an electrode is positioned in the deposition chamber and has an interior cavity in which first and second magnet systems are disposed. In certain embodiments, there is provided a method for depositing films onto substrates using a deposition chamber of the described nature. The invention also provides electrode assemblies for film-deposition equipment. In certain embodiments, the electrode assembly comprises a rotatable electrode (optionally having an outer coating of carbon or the like) having an interior cavity, with stationary first and second generally-opposed magnet systems being disposed in this interior cavity.

Abstract: A cylindrical magnetron capable of running at high current and voltage levels with a target tube that is self cleaning not only in the center portion, but also at the ends. Sputtering the ends of the target tube virtually eliminates accumulation of condensate at the ends and any resultant arcing, resulting in a more reliable magnetron requiring less service and a magnetron that produces more consistent coatings.

Abstract: A high-power ion sputtering magnetron having a rotary cathode comprising a conducting member disposed within the rotary cathode being made of an electrically conductive material for conducting electrical current from the power supply to the rotary cathode. The ion sputtering magnetron also has an electromagnetic field shield disposed between the conducting member and the drive shaft portion. The field shield is made of an electromagnetic field-permeable material such as a ferrous material for reducing damage to parts adjacent to the conducting member that are susceptible to inductive magnetic heating.

Abstract: The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is located in the bearing housing for sealing the drive shaft to the housing. An at least one electrical contact is disposed between a power source and the cathode for transmittal of an oscillating or fluctuating current to the cathode. The electrical contact between the power source and the cathode is disposed inside of the vacuum chamber, greatly reducing, and almost eliminating, the current induced heating of various bearing, seals, and other parts of the rotatably sputter cathode assembly.

Abstract: A support assembly for the magnetic array in a cylindrical magnetron that greatly reduces the stress placed on the assembly and on the end blocks of the magnetron. The support assembly and method also reduce the time necessary for properly positioning the magnetic array in relation to the target tube, and result in uniform positioning of the magnetic array along the length of the target tube. A cylindrical magnetron incorporating such an assembly produces uniform coatings and requires less adjustment and maintenance.

Abstract: An AC/DC cylindrical magnetron with a drive system that absorbs large variations in the rotation of the target tube, an efficient high capacity electrical transfer system, and improved electrical isolation.

Abstract: A magnetron sputter reactor having a complexly shaped target with a vault arranged about a central axis facing the wafer. The vault may be right cylindrical with axially magnetized magnets disposed in back of its sidewall or be annular with preferably opposed magnets disposed in back of its two sidewalls. One or two electromagnetic coils are disposed about the processing space between the target and the wafer to either promote extraction of metal ions from the vault, to defocus the ion beam extracted from the vault and focused towards the central axis, or to compensate for a magnetic shield surrounding the reactor.

Abstract: A facing target sputtering apparatus, comprising: inner and outer spaced-apart, concentric, and coextensive tubular cathodes open at each end, with the inwardly facing surface of the outer cathode and the outwardly facing surface of the inner cathode; a first pair of ring-shaped magnet means extending around the outwardly facing surface of the outer cathode at the ends thereof, with a first polarity magnetic pole facing the outwardly facing surface; a second pair of ring-shaped magnet means extending around the inwardly facing surface of the inner cathode at the ends thereof, with a second, opposite polarity magnetic pole facing the inwardly facing surface; and a substrate positioned in spaced adjacency to an end of the inner and outer cathodes; wherein: magnetic flux lines from the first and second pairs of magnet means uni-directionally pass through portions of an annularly-shaped space between the ends of the inner and outer cathodes, and during sputtering operation, plasma is substantially confined t

Abstract: An improved interconnection system for attaching an improved cylindrical magnetron target to a rotatable flanged spindle incorporates an annular extension on the target, which fits over the edge of the spindle flange, facilitates centering the target on the spindle, and helps shield target sealing surfaces. The annular extension terminates in an inwardly-angled circumferential step. The target-spindle interconnection system includes a split clamping collar and a generally annular retainer ring that slidable over the spindle shaft and rotatable against the spindle flange, the retainer ring having external circumferential threads that are angled away from the flange. The split clamping collar has, at one end, an inwardly-angled lip that engages the overhanging step and, at the other end, inwardly-angled, internal, circumferential threads that engage the threads of the retainer ring to draw the target and spindle together as a unified assembly as the retainer ring is rotated.

Abstract: A hollow cathode sputtering target and associated magnetron. The target includes a tubular sidewall and a circular roof forming a cylindrical vault arranged about an axis. The sidewall is surrounded by a first set of magnets of a first magnetic polarity along the axis. A second set of magnets, disposed in back of the roof, and asymmetric and rotatable about the axis, includes an outer pole preferably of the first magnetic polarity surrounding an inner pole of the opposed magnetic polarity and of lesser total magnetic intensity. Optionally, the roof and sidewall are separate members having individual power supplies. Further optionally, the first set of magnets are asymmetric and rotatable with the second set of magnets about the axis.

Abstract: A method of forming a tantalum-containing layer on a substrate is described. The tantalum-containing layer is formed using a physical vapor deposition technique wherein a magnetic field in conjunction with an electric field function to confine material sputtered from a tantalum-containing target within a reaction zone of a deposition chamber. The electric field is generated by applying a power of at least 8 kilowatts to the tantalum-containing target. The magnetic field is generated from a magnetron including a first magnetic pole of a first magnetic polarity surrounded by a second magnetic pole of a second magnetic polarity opposite the first magnetic polarity. The first magnetic pole preferably has a magnetic flux at least about 30% greater than a magnetic flux of the second magnetic pole. The tantalum-containing layer deposition method is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is formed.