Abstract: A high-power ion sputtering magnetron having a rotary cathode comprising a conducting member disposed within the rotary cathode being made of an electrically conductive material for conducting electrical current from the power supply to the rotary cathode. The ion sputtering magnetron also has an electromagnetic field shield disposed between the conducting member and the drive shaft portion. The field shield is made of an electromagnetic field-permeable material such as a ferrous material for reducing damage to parts adjacent to the rotary cathode that are susceptible to inductive magnetic heating.

Abstract: An array of auxiliary magnets is disclosed that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

Abstract: A system and method for reducing and controlling the number of defects due to carbon inclusions on magnetic media is disclosed. A diamond like carbon protective layer is deposited on magnetic media using a rotary cathode target assembly. The target and cathode are cylindrical in shape and are mounted on holder that allows the target and cathode to rotate while holding a magnet fixed. The target surface is periodically swept in through a plasma which sputters off the surface of the target. This prevents the build up of redeposited material on the target and consequently keeps the target surface cleaner. The reduction of redeposited material on the target surface reduces the number of unwanted particulates which are ejected from the surface, manifesting themselves as disk defects.

Abstract: A magnetron includes a decoupling plate (16) located between the end hat (15) of the magnetron cathode (21) and an output coupling member (11). The use of the decoupling plate (16) presents a high impedance and gives a resonant circuit which is arranged to be resonant at the operating frequency of the magnetron. This prevents or reduces power loss due to capacitive coupling. In another arrangement, the decoupling plate (20) is mounted be a post (21) on the end hat (15) of the magnetron cathode (1).

Abstract: A hollow cylindrical target for a cathode sputtering unit with a hollow cylindrical sputtering material and a target holder. The sputtering material has an annular cross section and concentrically surrounds a longitudinal segment of the target holder. The target holder extends out of the sputtering material at least at one end of the target to allow connection to the cathode sputtering unit. The at least one part of the target holder that extends from the sputtering material is a single part that can be detached from the target by at least one screw fitting.

Abstract: An AC/DC cylindrical magnetron with a drive system that absorbs large variations in the rotation of the target tube, an efficient high capacity electrical transfer system, and improved electrical isolation.

Abstract: A cylindrical target is obtained by joining a backing tube made of metal as an inner cylinder and a target material as an outer cylinder via a buffer member 52 such as a carbon felt. The cylindrical target broadens the possibility of selecting the target material and the material for a backing tube for supporting this, simplifies manufacturing and enables recycling.

Abstract: A cylindrical magnetron having a cylindrical cathode surrounding a cylindrical target. The cathode is without features extending inwards thereof at either end such that the target may be axially removed from or installed into the cathode from either end. The target is positioned and axially retained within the cathode by resilient means operative between the outer surface of the target and the inner surface of the cathode. The invention is especially useful in magnetron assemblies having a plurality of abutting, coaxially disposed magnetrons, wherein all the targets may be removed and replaced from the cathode assembly without requiring disassembly and reassembly of the cathodes.

Abstract: An apparatus and method for controlling and optimizing a non-planar target shape of a sputtering magnetron system are employed to minimize the redeposition of the sputtered material and optimize target erosion. The methodology is based on the integration of sputtered material from each point of the target according to its solid angle view of the rest of the target. The prospective target's geometry is optimized by analytically comparing and evaluating the methodology's results of one target geometry against that of another geometry, or by simply altering the first geometry and recalculating and comparing the results of the first geometry against the altered geometry. The target geometries may be of many different shapes including trapezoidal, cylindrical, parabolic, and elliptical, depending upon the optimum process parameters desired.

Abstract: An array of unbalanced magnetrons arranged around a centrally-located space for sputter coating of material from target electrodes in the magnetrons onto a substrate disposed in the space. The electrodes are powered in pairs by an alternating voltage and current source. The unbalances magnetrons, which may be planar, cylindrical, or conical, are arranged in mirror configuration such that like poles are opposed across the substrate space or are adjacent on the same side of the substrate space. The magnetrons are all identical in magnetic polarity. A positive plasma potential produced by the AC driver prevents electrons from escaping to ground along the unclosed field lines, increasing plasma density in the background working gas and thereby improving the quality of coating being deposited on the substrate.

Abstract: A magnetron source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity. Step coverage uniformity is also improved by controlling the magnetic fields, and thus the flow of ions and electrons, near the plane of the substrate.

Abstract: The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is located in the bearing housing for sealing the drive shaft to the housing. An at least one electrical contact is disposed between a power source and the cathode for transmittal of an oscillating or fluctuating current to the cathode. The electrical contact between the power source and the cathode is disposed inside of the vacuum chamber, greatly reducing, and almost eliminating, the current induced heating of various bearing, seals, and other parts of the rotatably sputter cathode assembly.

Abstract: A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. At least one set of vertically mounted, dual and triple rotatable cylindrical (or planar) magnetrons with associated vacuum pumps, form semi-isolated sputtering modules. The sputtering modules can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point.

Abstract: A PVD system comprises a hollow cathode magnetron with a downstream plasma control mechanism. The magnetron has a hollow cathode with a non-planar target and at least one electromagnetic coil to generate and maintain a plasma within the cathode. The magnetron also has an anode located between the cathode and a downstream plasma control mechanism. The control mechanism comprises a first, second and third electromagnetic coil beneath a mouth of the target, vertically spaced so as to form a tapered magnetic convergent lens between the target mouth and a pedestal of the magnetron.

Abstract: A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

Abstract: A novel hollow cathode magnetron source is disclosed. The source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity.

Abstract: A target for a magnetron plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated and has a width of preferably at least 5 cm and an aspect ratio of at least 1:2, preferably 1:1. Various types of magnetic means positioned around the walls of the vault, some of which may rotate along the vault, create a magnetic field in the vault to support a plasma extending over a large volume of the vault from its top to its bottom. The large plasma volume within the vault increases the probability that the sputtered metal atoms will become ionized and be accelerated towards an electrically biased wafer support electrode.

Abstract: An improved interconnection system for attaching an improved cylindrical magnetron target to a rotatable flanged spindle incorporates an annular extension on the target, which fits over the edge of the spindle flange, facilitates centering the target on the spindle, and helps shield target sealing surfaces. The annular extension terminates in an inwardly-angled circumferential step. The target-spindle interconnection system includes a split clamping collar and a generally annular retainer ring that slidable over the spindle shaft and rotatable against the spindle flange, the retainer ring having external circumferential threads that are angled away from the flange. The split clamping collar has, at one end, an inwardly-angled lip that engages the overhanging step and, at the other end, inwardly-angled, internal, circumferential threads that engage the threads of the retainer ring to draw the target and spindle together as a unified assembly as the retainer ring is rotated.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. The nested magnets are rotated along the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

Abstract: A cathode assembly for magnetron sputtering of a workpiece, and sputtering apparatus and methods of sputtering using same are provided. The cathode assembly includes a tubular cathode, which may be cylindrical in cross section along its length, or which may be curved or flexible, depending on the shape of workpiece that is to be sputtered, and which has a sputtering length of Ls. The cathode assembly also includes a magnet package, or a plurality of spaced magnet packages, each magnet package including either one magnet or a plurality of spaced magnets of alternating polarity, and having a magnet package length Lpkg which is less than Ls. The cathode assembly further includes one or more means for positioning, and preventing radial displacement of, the cathode along the axis of symmetry of the cathode.

Abstract: A sputter deposition apparatus for depositing a film onto a substrate includes a surrogate rotating magnetron includes an internal magnet and a wall thickness that permits a fringe magnetic field to support an electron cyclotron resonance. Auxiliary coating sources are modulated for depositing a desired sequence of material onto the substrate.

Abstract: A magnetron including a target (2) for sputtering onto a substrate in described. The magnetron comprises a magnetic field generator (4) for generating a closed loop magnetic field adapted to generate a plasma race-track above the target (2) and a driving device for establishing relative substantially translational movement between the race-track and the target (2) and adapted to influence the magnetic field generated by the magnetic field generator (4) at least during part of the relative substantially translational movement, the distance between any point on the race track and the momentarily closest part of the one or more pieces (50) of ferromagnetic material varying in accordance with the relative substantially translational movement of the race-track and the target (2).

Abstract: A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during the pulse adjacent to the area of the magnetron. The power pulsing frequency needs to be desynchronized from the rotation frequency so that the magnetron does not overlie the same area of the magnetron during different pulses. Advantageously, the power pulses are delivered above a DC background level sufficient to continue to excite the plasma so that no ignition is required for each pulse.

Abstract: A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well.

Abstract: A plasma sputtering system is disclosed, along with methods of sputtering and methods of arranging an array of magnets disposed within the sputtering system. An embodiment of the sputtering system includes a vacuum chamber. A rotating magnetron is disposed in the vacuum chamber. A target is positioned between the magnetron and a substrate upon which material from the target is to be deposited. The magnetron includes an array of pairs of oppositely poled permanent magnets. A closed loop magnetic path extends between the pairs of oppositely poled magnets of the array. The magnetic path includes an inturn region proximate to an axis of rotation of the magnetron and at least two (e.g., five) indent regions.

Abstract: The invention relates to a vapor deposition coating apparatus. More particularly it relates to an apparatus in which the ion current density is carefully controlled to improve coating. This control enhances the versatility and enlarges the range of deposition conditions which can be achieved within a single apparatus, so that coatings with very different properties can be deposited in the same equipment. The vapor deposition apparatus includes a vacuum chamber, at least one coating means or ionization source disposed at or about the periphery of a coating zone, one or more internal magnetic means positioned such that the magnetic field lines are generated across the coating zone and means for altering the strength or position of the magnetic field lines to aid confinement.

Abstract: A sputtering magnetron with a rotating cylindrical target and a stationary magnet assembly (22, 24*) is described, the magnet assembly (22, 24*) being adapted to produce an elongate plasma race-track on the surface of the target, the elongate race-track having substantially parallel tracks over a substantial portion of its length and being closed at each end by end portions (22′), wherein the spacing between the tracks of the race-track is increased locally to materially effect sputtering onto a substrate. The increase in spacing may be at the end portions or along the parallel track portion. The increase in spacing may provide more even erosion of the target beneath the end portions of the race-track, and provide more even coatings on the substrate.

Abstract: An improved interconnection system for attaching an improved cylindrical magnetron target to a rotatable flanged spindle incorporates an annular extension on the target, which fits over the edge of the spindle flange, facilitates centering the target on the spindle, and helps shield target sealing surfaces. The annular extension terminates in an inwardly-angled circumferential step. The target-spindle interconnection system includes a split clamping collar and generally annular retainer ring that slidable over the spindle shaft and rotatable against the spindle flange, the retainer ring having external circumferential threads that are angled away from the flange. The split clamping collar has, at one end, an inwardly-angled lip that engages the overhanging step and, at the other end, inwardly-angled, internal, circumferential threads that engage the threads of the retainer ring to draw the target and spindle together as a unified assembly as the retainer ring is rotated.

Abstract: A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. Vertically mounted, dual rotatable cylindrical magnetrons with associated vacuum pumps form semi-isolated sputtering modules, which can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point. The apparatus may take the form of a circular arrangement of modules for batch coating of wafer-like substrates, or the modules may be arranged linearly for the coating of large planar substrates.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. In one embodiment, a chamber having one or more current return plates, a support member, an electromagnetic field generator and a support member is provided. The target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. During processing, a bias is applied to the support member by an RF power source. The return plates are selectively energized to provide a return path for the RF currents, thereby affecting the orientation of an electric field in the chamber.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. The nested magnets are rotated along the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls.

Abstract: Material utilization and process stability for a rotating cylindrical magnetron target used in a sputtering system are improved by incorporation of a second magnet structure or “race track”, allowing the power density on the target surface to be reduced by approximately 50% for any given point where magnetic confinement of the plasma exists. Offsetting one race track relative to the other along the longitudinal axis of the target reduces the power density at each turn-around area (relative to the longitudinal area). Modestly increasing the target material thickness at the ends of the target allows nearly all of the material between the turn-around areas to be sputtered.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls.

Abstract: The invention provides a sputtering system which consists of an ion beam and a target of a sputterable material. A distinguishing feature of the system of the invention is that the sputtering target forms a guide channel for an ion beam and sputtered particles, so that a portion of the ions collides with the walls of the target inside a closed volume of the target and forms neutral sputterable particles impinging the object. The other part of the ions goes directly to the object and participates in an ion-assisted overcoating. Thus, the special form of the target improves efficiency of sputtering, prevents scattering and the loss of the sputterable material. The system can be realized in various embodiments. One of the embodiments provides a multiple-cell system in which each cell has an individual ion-emitting slit formed by the end of a cathode rod of one cathode plate and the opening in the second cathode plate.

Abstract: A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subsequent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.

Abstract: A magnetron for use in a DC magnetron sputtering reactor that can rotate at a smaller diameter during a deposition phase and at a larger diameter during a cleaning phase, whereby sputter material redeposited outside of the deposition sputtering track is removed during the cleaning phase. An embodiment for a two-diameter magnetron includes a swing arm fixed on one end to the magnetron rotation motor shaft and on the other end to a pivot shaft, pivotably coupled to the magnetron. When the magnetron is rotated in different directions, hydrodynamic forces between the magnetron and the chilling water bath cause magnetron to pivot about the pivot shaft. Two mechanical detents fix the limits of the pivoting and hence establish the two diameters of rotation.

Abstract: A hollow cathode magnetron (HCM) sputter source includes a main magnet positioned near the sidewall of the hollow cathode target and a pair of rotating magnet arrays that are positioned near the closed end of the hollow cathode target. One of the arrays produces a magnetic field that is aligned with (aids) the magnetic field produced by the main magnet; the other arrays produce a magnetic field that is aligned against (bucks) the magnetic field produced by the main magnet. Field lines produced by the magnet arrays contain an extension of the plasma that is controlled by the main magnet. Charged particles circulate between the two portions of the plasma. The extended plasma is thus formed over a very high percentage of the surface of the target, thereby creating an erosion profile that is highly uniform and encompasses essentially the entire face of the target. This maximizes the utilization of the target and minimizes the frequency at which the spent target must be replaced.

Abstract: An elongate emitter is used as a cathode to coat material onto a cylindrical workpiece by magnetron sputterinig. Where the inside surface of the workpiece is coated, the workpiece itself is used as the vacuum sputtering chamber. The overlap between the plasma field and the magnetic field creates a coating zone which is moved along the length of the workpiece to evenly coat the workpicce.

Abstract: An apparatus is disclosed for the coating of substrates (10) with thin films, having a vacuum chamber (1), a target (6) to be atomized, situated opposite the substrate (10) in the vacuum chamber (1), with magnets (19, 19′, 19″; 20, 20′, 20″) to produce a magnetic tunnel in front of the area of the target (6) to be atomized, an inlet (8) for a process gas into the process space (11), an anode (12), which is electrically insulated with respect to the vacuum chamber (1), and a current-voltage supply to produce a plasma in front of the target (6). The target (6) is shaped as a rotation-symmetrical body, which provides a ring-shaped enclosure around the substrate (10), wherein the magnets (19,19′, . . . ; 20,20′, . . . ) are supported on the side of the hollow cylindrical target (6), facing away from the substrate (10), and can move around the rotational axis (R) of the target (6).

Abstract: A novel hollow cathode magnetron source is disclosed. The source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity.