Abstract: This application discloses a multi-layer film deposition apparatus comprising; plural cathodes comprising targets respectively, a main rotation mechanism for rotating each cathode together, and a substrate holder to hold a substrate onto which a multi-layer film is deposited by sputtering. The targets are arranged at positions where their center axes are on a circumference. The main rotation mechanism rotates the cathodes around the axis in common to the circumference. The substrate is located at a position within an area in view to the direction of the axis. The area is formed of two loci of points on the rotated targets. One of the locus is drawn by the point nearest to the axis, and the other locus is drawn by the point furthest from the axis.

Abstract: Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.

Abstract: A magnetron sputtering apparatus and a magnetron sputtering method using the same, wherein a vacuum chamber has a discharge gas inlet and a discharge gas outlet, a substrate holder is installed inside the vacuum chamber, a magnetic circuit unit, which includes a target electrode installed opposite to the substrate and a magnetron fixed on a rear surface of the target electrode, faces the substrate holder and circulates around the central axis of the substrate holder, and a driving unit circulates the magnetic circuit unit and adjusts a distance between the target electrode and the center of the substrate holder. Accordingly, in the magnetron sputtering apparatus of the present invention, the uniformity of a thin film and the step coverage is improved.

Abstract: Vacuum coating deposition apparatus and methods employ a vacuum chamber with a superstructure to which deposition components in the vacuum chamber are mounted, such as a sputter target, substrate, etc. to provide a fixed relative position between them substantially unaffected by environmental and operating vibrations and flexure of the chamber wall. The superstructure is structurally independent of the deposition chamber wall and may be housed within the chamber or externally, extending from an external position to or through the wall of the deposition chamber. A meter of sensor, e.g., an optical monitor for measuring film thickness during deposition, continually monitors at least one parameter of the coating deposition and generates a corresponding control signal. A controller responsive to the control signal continually controls at least one process variable of the coating deposition in response to the control signal.

Abstract: Physical vapor deposition (PVD) system comprises a chamber, an upper shield and a lower shield mounted within the chamber, a cover ring having one or more tabs extending radially inwardly therefrom. The PAD system further includes a shutter disk having one or more notched areas formed in the periphery thereof to receive non-contacting the one or more tabs of the cover ring. The cover ring has two or more recesses formed in an upper side thereof with a guide pin extending from the center of the recesses. The lower shield has two or more cups with a hole therein to be engaged with the guide pin of the cover ring to keep the lower shield from rotating with respect to the cover ring. The cups of the lower shield are inserted into the recesses of the cover ring. These improvements enable a standard shutter arm assembly and a shutter disk to be utilized in a two-tab block-out scheme.

Abstract: An object of the invention is to provide a method for sputtering and a device for sputtering which can make distribution of film's thickness and coverage distribution improve, in the device for sputtering constituted of at least a substrate, a substrate holder which holds the substrate, a target for forming a thin film on the substrate, a sputtering cathode in which the target is installed, a means for sputtering which makes materials of the target sputter to the substrate, which are such that sputtering is carried out by making the substrate holder rotate and making a sputter cathode unit comprising at least one sputtering cathode moves along an arc over the rotating substrate held on the substrate holder.

Abstract: Raw material supplying sources, namely a target and a microwave gun are provided in a vacuum chamber such that they oppose a substrate, and a main evacuation port is disposed closer to the microwave gun between both the raw material supply sources. A control system memorizes oxygen gas flow rate under a predetermined argon gas flow rate, and sputter film formation rates comprised of three modes of high-, middle- and low-speeds, namely, high-speed metallic species film forming mode, low-speed compound species film forming mode and intermediate film forming mode depending on the oxygen gas flow rate, as reference data. At the time of film formation under a predetermined argon gas flow rate, an oxygen gas flow rate and an argon gas flow rate corresponding to the high-speed metallic species film forming mode are selected.

Abstract: A system and method for forming a chemically reacted layer proximate an exposed surface of a substrate is disclosed. A gas supply provides a chemically reactive molecular gas to an ion source that generates a divergent ion current directed at a target. The ion current contains at least one species of chemically reactive molecular ion, and the target is disposed in a chamber having a partial vacuum. A voltage source applies a bias to the target such that chemically reactive molecular ions from the ion source are accelerated toward the target with sufficient kinetic energy to dissociate at least some of the chemically reactive molecular ions by collision with the surface of the target.

Abstract: A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a controller configured to selectively vary the target-cathode voltage and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage.

Abstract: A chamber (10) for applying material to the surface of a semiconductor wafer (18) located in the chamber by means of cathodic sputtering a target (26), located on a target mount (24), of the material to be applied or a component thereof, contains a wafer mount (14) on which the semiconductor wafer (18) to be coated is located. The wafer mount (14) is provided movable in the chamber (10) between a charging position for application of the semiconductor wafer and a sputtering position in which semiconductor wafer is located at a predefined distance away from and opposite to the target. Provided in the chamber is a shielding support (30) which is supported by the edge of the semiconductor wafer in the sputtering position in maintaining it in contact with the wafer mount, the shielding support extending between the edge of the semiconductor wafer and a portion adjoining the edge of the target on the target mount and thus defining a sputtering space between the target and the semiconductor wafer.

Abstract: A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.

Abstract: A method for manufacturing a coated substrate disk, comprises linearly bringing the substrate on a mounting, into an evacuated transport chamber and rotating the mounting in the chamber. The mounting is then extended into a coating position and coating of the substrate takes place. The mounting is then linearly retracted into the chamber again and rotated into a position for guiding the substrate out of the chamber. These steps are repeated for several substrates and then a pump opening into the chamber is closed by means of the mounting or the substrate. The chamber is then flooded and vacuum-tightly closed and the pump opening is released. The chamber is evacuated and the substrate moving and coating steps are repeated for more substrates.

Abstract: An apparatus and a method for self-aligning a cover ring onto a wafer pedestal in a physical vapor deposition chamber are described. The apparatus for self-aligning a cover ring to a wafer pedestal includes a wafer pedestal in the shape of a circular disk equipped on an outer periphery of the disk at least two, and preferably four, male alignment members such as protruding tabs; and a cover ring of annular shape that has an inwardly, horizontally extending lip and at least one downwardly, vertically extending lip equipped on an inner periphery at least two, and preferably four, female alignment members such as recessed slots that are adapted for receiving the at least two male alignment members when the wafer pedestal is raised to engage the cover ring.

Abstract: The present invention is directed to a sputtering device for depositing multi-layer films on a substrate, the sputtering device comprising at least one planar-magnetron-sputtering-cathode and at least one facing-targets-sputtering-cathode housed in a single vacuum chamber, and adapted such that each planar-magnetron-sputtering-cathode and facing-targets-sputtering-cathode can be selectively positioned for sputtering deposition onto a substrate.

Abstract: Sequential sputtered film deposition of distinct materials on a workpiece is obtained with discrete targets composed of such distinct materials disposed on separate area portions of a common cathode/heatsink. Sputtering without cross contamination of the deposited films is enabled during an interval of relative motion between the target and workpiece or in an indexed static relative disposition, wherein the workpiece projection is entirely proximate one such portion to deposit the respective layer.

Abstract: A plurality of superconductor particles are formed being of a first material which is relatively brittle and is selected to be in a superconductive state at a relatively high temperature, typically above 77K which is the temperature of liquid nitrogen. A coating layer is formed on each superconductor particle, the coating layer being of a second material selected to be substantially non-reactive with the first material. The coated particles are then mixed with a third material to form a composite wherein the third material is in proximity to the first material but separated by the second material. The third material is selected to be relatively ductile when compared to the first material and to be driven to a superconductive state by the first material when the first material is in a superconductive state and the third material is in proximity to the first material. The second material protects the third material from oxidation by the first material.

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Abstract: Apparatus (10) for treating a substrate, comprising: a vacuum chamber (12); a substrate carrier (14) adapted to carry a substrate (16) to be treated; a source material holder (22) for holding a source material (34) with which the substrate (16) is to be treated; and vaporising or sputtering means (20) for vaporising/sputtering the source material (34); wherein the source material holder (22) includes a positioning means (24) for relatively moving the source material (34) towards the substrate carrier (14).

Abstract: A substrate processing device in which a film is formed on a substrate while a magnetic field, by a magnet arranged in the periphery of a substrate holder, is imparted on to the surface of a substrate mounted on the substrate holder while the substrate holder is rotated, wherein a rotation mechanism for the magnet and a rotation mechanism for the substrate holder are independently provided and controlled and, furthermore, in that it is provided with a device for detection of the magnetic field orientation, a device for detection of the prescribed orientation of the substrate, and a mechanism which, using the output of said two detection devices, affords rotation in which the prescribed direction of the substrate and the direction of the magnetic field are aligned within a prescribed angle.

Abstract: A system and method for reducing and controlling the number of defects due to carbon inclusions on magnetic media is disclosed. A diamond like carbon protective layer is deposited on magnetic media using a rotary cathode target assembly. The target and cathode are cylindrical in shape and are mounted on holder that allows the target and cathode to rotate while holding a magnet fixed. The target surface is periodically swept in through a plasma which sputters off the surface of the target. This prevents the build up of redeposited material on the target and consequently keeps the target surface cleaner. The reduction of redeposited material on the target surface reduces the number of unwanted particulates which are ejected from the surface, manifesting themselves as disk defects.

Abstract: A sputtering apparatus for depositing layers of material onto a substrate includes a vacuum chamber, a first target and a second target positioned within the vacuum chamber. A source of power is placed in electrical communication with the first target and the second target. A switch alternately connects the source of power between the first target and the second target. The first target and the second target are different materials. The switch connects power to the first target when the transport mechanism positions the substrate near the first target and the switch connects power to the second target when the transport mechanism positions the substrate closer to the second target.

Abstract: An exemplary method for using a mobile plating system is provided that includes locating the mobile plating system at a desired location for plating, positioning an external vacuum pump from an interior position of a mobile storage volume of the mobile plasma plating system to an exterior position, and coupling the external vacuum pump to a vacuum chamber within the mobile storage volume of the mobile plasma plating system using a flexible piping segment, rigid coupling with a dampening effect, or other arrangement operable to reduce and/or eliminate the mechanical vibrations within the vacuum chamber due to the operation of the external vacuum pump.

Abstract: An exemplary mobile plating system is provided for performing a plating process using virtually any known or available deposition technology for coating or plating as substrate. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control circuitry to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: Embodiments of the invention provide a processing apparatus having a lower reactor portion, an adjustable reactor wall portion attached to an upper portion of the lower reactor portion, the adjustable reactor wall portion being configured for selective linear expansion and contraction, and a source assembly positioned above the adjustable reactor wall portion. The cooperative operation of the source, adjustable wall, and the lower reactor creates a processing apparatus wherein the throw distance may be varied without disassembly of the reactor.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: A method of reducing black spots in a light-emitting device comprising a light-emissive material interposed between a first electrode and a second electrode such that the first and second electrodes are capable of injecting charge carriers into the light-emissive organic material, the method comprising: forming at least one of the first and second electrodes by depositing onto the light-emissive organic material a first layer of a material by a deposition technique which intrinsically results in undesirable pin-holes; and depositing a second layer of a material onto the first layer by a conformable deposition technique.

Abstract: A vacuum treatment system has a vacuum treatment chamber, with a sensor arrangement to detect the treatment atmosphere momentarily existing in the treatment area. An ACTUAL value sensor of the sensor arrangement for one or more of the elements to establish a treatment atmosphere is a regulating element of a control circuit for the treatment atmosphere in the treatment area. A workpiece carrier is drivably movable in the chamber through the treatment area having the treatment atmosphere. At least one of the elements modulates the treatment atmosphere in the treatment area according to a defined profile as a function of the workpiece carrier position. A process is disclosed for manufacturing workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with the defined profile.

Abstract: The invention is intended to provide a sputtering device in which a single sputtering chamber is equipped with a plurality of supports and a target-positioning mechanism for rotating the supports to position the targets into film-forming position. Each support is provided with targets that are different from each other. The same types of targets are mounted in the same order on each support. The supports are rotated to select the same types of targets needed to form a film and to position the targets relative to the substrate. A plurality of the same type of targets are used simultaneously to form a film. The supports are then rotated to select the next targets, and the next film is built up on the previous film. As the film is formed, targets that are not used in the film-forming process can be cleaned with a cleaning device.

Abstract: In a vacuum treatment apparatus for deposition of thin layers on shell-shaped substrates (2, 2′, . . .

Abstract: An exemplary configurable vacuum system and method are provided for use in coating or plating that provides the capability to handle substrates of significantly different shapes and sizes. The configurable vacuum system includes a vacuum table assembly and a vacuum chamber. The vacuum table assembly may include a support frame, an insulated surface, a mechanical drive mounted to the support frame, an electrical feed through mounted to the support frame, a filament positioned above the insulated surface between a first filament conductor and a second filament conductor, a filament power connector electrically coupled to the first filament conductor through a first filament power contact pad of the filament power connector and to the second filament conductor through a second filament power contact pad of the filament power connector, and a platform operable to support the substrate.

Abstract: This application discloses a multi-layer film deposition apparatus comprising; plural cathodes comprising targets respectively, a main rotation mechanism for rotating each cathode together, and a substrate holder to hold a substrate onto which a multi-layer film is deposited by sputtering. The targets are arranged at positions where their center axes are on a circumference. The main rotation mechanism rotates the cathodes around the axis in common to the circumference. The substrate is located at a position within an area in view to the direction of the axis. The area is formed of two loci of points on the rotated targets. One of the locus is drawn by the point nearest to the axis, and the other locus is drawn by the point furthest from the axis.

Abstract: An exemplary mobile plating system and method are provided for performing a plating process using virtually any known or available deposition technology for coating or plating. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control module to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction is disclosed. The magnetic film forming system includes a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable while still holding the substrate, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

Abstract: A vacuum coating installation has at least a central distribution station which can be evacuated and has a transport arrangement driven in a controlled manner essentially along a plane, for the material to be treated. One operating station for the distribution station as well as at least two processing stations for the material to be treated are provided. The three or more stations communicate by way of operating openings with the distribution station, through which openings the material to be treated can be transported from one station into the other by the transport arrangement for the material to be treated. The material to be treated is formed by individual workpiece holders of the installation, each having a plurality of workpiece supports.

Abstract: A method and apparatus that operates at a high pressure of at least one torr for improving sidewall coverage within trenches and vias in a substrate. The apparatus comprises a chamber enclosing a target and a pedestal, a process gas that provides a process gas in the chamber, a pump for maintaining the high pressure of at least about one torr in the chamber and a power source coupled to the target. Additionally, the distance between the target and the substrate is set to ensure that collisions between the sputtered particles and the plasma occur in the trenches and vias on the substrate. The method comprises the steps of providing a process gas into the chamber such that the gas pressure is at least about one torr, generating a plasma from the process gas, and sputtering material from the target.

Abstract: A sputtering device is provided in which at least one target is sputtered by sputtering discharge to produce a film of target material on at least the first surface of a substrate. The sputtering device has a principal rotating mechanism that rotates the at least one target about an axis of revolution coaxial with the central axis of the substrate. The target is positioned offset from and circumferential to the central axis of the substrate coaxial with the axis of revolution. A magnet mechanism for magnetron discharge of the sputtering discharge forms a magnetic field asymmetrical to a central axis of the target and is rotated by an auxiliary rotating mechanism. The principal rotating mechanism integrates rotation of the targets with the magnet mechanism.

Abstract: A vacuum treatment system has a vacuum chamber in which there is at least one part which is driven in rotation and is connected by a gear train which comprises at least two rotating transmission bodies with a motor drive unit. The rotating transmission bodies produce a relative motion in a rolling manner. For this purpose, the bodies have axes of rotation that are not aligned. The rotating transmission bodies are magnetically drive-coupled to each other, and at least one of them is located in the vacuum chamber.

Abstract: Material is deposited from an active shutter onto a substrate located in a processing chamber housing with a shutter target coupled to a shutter target assembly. A first target assembly located in the housing supports a target for physical-vapor deposition of a first material onto the substrate. A shutter is selectively moveable to extend into a closed or activated position and to retract into an open position. The shutter target assembly is coupled to the shutter such that when the shutter is in the closed position, the shutter target assembly is positioned to allow deposition of material from the shutter target onto the substrate. When the shutter is in the open position, the first target is positioned to deposit material onto the substrate. Alternating layers of materials may be deposited by the shutter target and first target by cycling the shutter between an open position and a closed position.

Abstract: An improved method and apparatus for applying discrete area holograms or other optical devices directly onto documents or other substrates in a continuous process analogous to the operation of a printing press. The continuous process is carried out in a vacuum chamber in which at least two process steps are performed in sequence: the formation of a micro-grooved discrete resin area and a localized coating of it with a reflective or refractive material layer. The formation of the micro-grooved resin area can be accomplished by electron beam curing of the resin. The localized coating of the micro-grooved resin can be done by sputtering. One or more other steps, including pre-coating, post-coating and partial removal of the reflective or refractive layer, may also be carried out as part of the continuous process within the vacuum chamber.

Abstract: A method and apparatus for vacuum coating plural articles employs a drum work holder configuration and a sputter source with a plurality of individually controlled anodes for effectively providing uniform coatings on articles disposed at different locations on the drum work holder. A small number of measured process parameters are used to control a small number of process variable to improve coating uniformity from batch to batch.

Abstract: A sputtering apparatus for depositing layers of material onto a substrate includes a vacuum chamber, a first target and a second target positioned within the vacuum chamber. A source of power is placed in electrical communication with the first target and the second target. A switch alternately connects the source of power between the first target and the second target. The first target and the second target are different materials. The switch connects power to the first target when the transport mechanism positions the substrate near the first target and the switch connects power to the second target when the transport mechanism positions the substrate closer to the second target.

Abstract: A method and system for producing a film (preferably a thin film with highly uniform or highly accurate custom graded thickness) on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source operated with time-varying flux distribution. In preferred embodiments, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. A user selects a source flux modulation recipe for achieving a predetermined desired thickness profile of the deposited film. The method relies on precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.

Abstract: There may be used a film-forming apparatus having a substrate 4 that is rotatable around the center of one rotating axis 10 in the vertical direction situated in an inner cylinder 12, and a plurality (four in FIG. 2) of target units each comprising the pair of targets 2A, 2B (2B is under 2A serially arranged in the vertical direction inside an outer cylinder 13 opposite the surface 4a of the substrate 4, which are arranged in parallel in the circumferential direction of the inner wall of the outer cylinder 13. By employing a method whereby voltage is applied while alternatively reversing the polarity to each of the targets 2A, 2B, it is possible to form a coating on the surface of a substrate by glow discharge sputtering, to accomplish destaticizing while the sputtering can be carried out using a small in-line or bell jar apparatus with small space.

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Abstract: A plasma sputtering system that may be used to deposit a film on a substrate such as an optical disk is disclosed. In one embodiment, the sputtering system includes a main vacuum chamber. A plurality of sputtering chambers and a load lock chamber are connected to the main vacuum chamber. An assembly of a horizontal unprocessed substrate, an inner mask, and an outer mask are pressed onto a substrate transport tray that is positioned in the load lock. The tray supports the substrate and the masks throughout the processing of the substrate. A vertical lift lowers the tray from the load lock onto a carousel. The carousel transports the tray, substrate and masks to the sputtering chambers and then back to the load lock for unloading. Other lifts raise the tray, processed substrate, and masks from the carousel to the sputtering chambers. The tray is selectively pressed against the lower access aperture of the load lock and sputtering chambers so as to isolated them from the main chamber.

Abstract: A method and system for producing thin film alloy by a sputtering deposition process comprising using a crescent-shaped aperture interposed between the target and substrate of a sputtering deposition system.

Abstract: A method for establishing and maintaining a reliable ground for reactive sputtering systems. A spatially extended high density plasma is generated in a large region surrounding the sputtering target. The plasma electrically connects the target to a part of the coating machine that is not subject to deposition of sputtered material from the target. The plasma is generated by an applicator which is independent of the target.

Abstract: A sputtering chamber has a target that moves with an orbital motion relative to an ion beam. An X-Y assembly allows for target movement in both the horizontal and vertical directions. The X-Y assembly has a base plate, an intermediate plate, and a target mounting plate that attaches to the target. The plates are connected together by bearing blocks that slide along rails in the X and Y directions. A rotating shaft has gears that rotate a center shaft through the base and intermediate plates. The rotating center shaft has an arm on its end that attaches to the target mounting plate. The arm produces an orbital movement of the target. Rather than simply rotating the target around the center shaft, the center of the target orbits around the center of the center shaft. Ion-beam wear is spread across the target surface, extending target life and improving deposition uniformity.

Abstract: An independent, self contained apparatus for operation within a vacuum chamber. A sealed enclosure is located in the chamber. The enclosure contains its own atmosphere independent of the vacuum in the chamber. A motor, power unit, and controls are located entirely within the enclosure. They do not have a direct structural connection outside of the enclosure in any way that would effect the atmosphere within the enclosure. The motor, power unit, and controls drive a spinner plate located outside the enclosure but within the vacuum chamber.

Abstract: A sputter deposition apparatus and method includes perimeter magnets oriented an angle relative to the plane of the sputter target, either by magnetizing or by physically orienting the magnets at the chosen angle. The resulting magnetic flux extends radially outward, away from the central axis of the target, toward and beyond the target perimeter. This causes the return path of the flux to pass over the target surface more parallel to the plane of its sputtering surface. This spreads sputter erosion over a greater area of the target surface and mitigates development of sputtering grooves. Since target erosion is more uniform, more target material is used for sputter deposition, deterring waste. Each target can be used longer before the target material is penetrated, resulting in fewer target replacement cycles for a given volume of workpiece coating, raising the deposition chamber capacity factor.