Abstract: A sputtering deposit apparatus capable of depositing a thin film having uniform sheet resistance value is provided. The sputtering deposit apparatus is arranged with at least two magnetron sputtering units within a film deposit chamber. On the upstream side in the substrate transfer direction 43 of the target shield 55 provided on the magnetron sputtering unit disposed on the most upstream side in the substrate transfer direction, of at least the two magnetron sputtering units, there is disposed the first cathode shield 62 which is electrically insulated.

Abstract: An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.

Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Abstract: A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.

Abstract: A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

Abstract: A system for depositing material on a substrate using plasma and a target. The target may include the material and/or a second material. The system may include a plasma source for providing the plasma. The system may also include a chamber for containing the substrate, the plasma, and the target during deposition of the material on the substrate. The system may also include a first magnet disposed above the chamber or disposed below the chamber for influencing distribution of the plasma inside the chamber. At least one of a bottom surface of the magnet and a top surface of the magnet is at an angle with respect to an imaginary axis of the plasma source. A circular cross section of the plasma source is symmetrical with respect to the imaginary axis of the plasma source. The angle is greater than 0 degree and less than 90 degrees.

Abstract: An iPVD system is programmed to deposit uniform material, such as a metallic material, into high aspect ratio nano-sized features on semiconductor substrates using a process that enhances the feature filling compared to the field deposition, while maximizing the size of the grain features in the deposited material opening at the top of the feature during the process. Sequential deposition and etching are provided by controlling DC and high density power levels and other parameters.

Abstract: A dual magnetron for plasma sputtering in which two distinctly different magnetrons are mounted on a common plate rotating about a central axis in back of a target. At least one of the magnetrons is switched on and off by changes in chamber pressure or target power while the other magnetron, if it does switch, switches in complementary fashion. When the two magnetrons are mounted at different radii, the switching effects a effective movement of the magnetron such that different areas of the target are exposed to a sputtering plasma. In particular, a small unbalanced magnetron may scan the target edge to produce a highly ionized sputter flux and a larger magnetron positioned near the center can be switched on to clean sputter material redeposited on the target center.

Abstract: A processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate back and forth across an arc over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop.

Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

Abstract: A substrate processing system includes a processing chamber that can house a substrate therein; a target comprises a sputtering surface in the processing chamber, wherein the substrate is configured to receive material sputtered off the sputtering surface; a magnetron positioned adjacent to the target, wherein the magnetron can produce two erosion grooves separated by a distance S on the sputtering surface, wherein at least one of the two erosion grooves is characterized by an erosion width W; and a first transport mechanism that can move the magnetron in N steps along a travel path in a first direction. N is an integer. The magnetron can stop at each of the N steps to allow materials to be sputtered off the sputtering surface and to be deposited on the substrate. The N steps have substantially the same step size. The step size is approximately equal to the erosion width W.

Abstract: A drive end block for a magnetron arrangement with a rotating target, comprises an end block housing having a rotatably mounted drive shaft. The drive shaft is arranged in the end block housing, accessible at an end from outside of the end block housing for connection to the rotating target, and adapted at its end inside the end block housing for introduction of a torque. An electric motor with a stator and a rotor for creating the torque is arranged inside the end block housing.

Abstract: The present invention generally provides an apparatus and method for processing a surface of a substrate in a PVD chamber that has a magnetron assembly whose shape can be distorted to adjust the magnetic field strength in the processing region of the deposition chamber to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more magnetron regions and magnetron actuators that are used to increase and more evenly distribute the magnetic field strength throughout the processing region of the processing chamber during processing.

Abstract: A plasma-assisted sputter deposition system includes a reactor 1 into which a process gas is introduced; a doughnut-shaped electrode to be sputtered by plasma, in which a lower surface thereof is angled to a surface of a wafer; a spinning plate that spin on its central axis while moving over a circle above the doughnut-shaped electrode, in which the spinning plate contains magnet arrangement; an electrical power sources connected to the doughnut-shaped electrode, and a wafer holder for placing a wafer for film deposition, which is at rest during the film deposition.

Abstract: A split magnet ring, particularly useful in a magnetron plasma reactor sputter depositing tantalum or tungsten or other barrier metal into a via and also resputter etching the deposited material from the bottom of the via onto the via sidewalls. The magnet ring includes two annular magnet rings composed of the same axial polarity separated by a non-magnetic spacing of at least the axial length of one magnet and associated poles. A small unbalanced magnetrons rotates about the back of the target having an outer pole of the same polarity as the ring magnets surrounding a weaker inner pole of the opposite pole.

Abstract: A deposition system includes a process chamber, a workpiece holder for holding the workpiece within the process chamber, a first target comprising a first material, a second target comprising a second material, a single magnet assembly disposed that can scan across the first target and the second target to deposit the first material and the second material on the workpiece, and a transport mechanism that can cause relative movement between the magnet assembly and the first target or the second target.

Abstract: In one embodiment, a magnetron sputtering apparatus includes one or more magnet arrays for moving ions or charged particles on at least two plasma discharge paths on a target. Charged particles on one of the plasma discharge paths are moved in one direction, while charged particles on the other plasma discharge path are moved in the opposite direction to reduce rotational shifting of deposition flux on the patterned substrates. The plasma discharge paths may be formed by two symmetric magnet arrays or a single asymmetric magnet array rotated from behind the target.

Abstract: A sputtering device includes at least: a vacuum container defining a vacuum space; a substrate holder installed rotatably in the vacuum space; a substrate installed on the substrate holder; a target for forming thin film on the substrate; and a rotatable sputtering cathode in which the target is installed. The sputtering cathode is slanted relative to the substrate, and a center of the target is eccentric to a rotation axis of the sputtering cathode.

Abstract: A sputter coating installation 1 comprises a vacuum chamber having an interior space 3?. The interior space 3? of the vacuum chamber is defined by chamber walls 3. According to the present invention, an array of target units 9 is arranged in line inside the vacuum coating chamber. Particularly, the target units 9 are arranged tiltable relative to the vacuum chamber and relative to a transport path t of a substrate 2. The target units 9 are cathode units or magnetron units and comprise a target and a housing. The housing is attached to the target and defines an interior space of the target unit. Within the interior space of the target units a number of components are arranged, e.g. a combination of a magnet yoke and a magnet system, a magnet yoke drive, a cooling system (arranged near the target), an electric current supply for supplying energy for the sputter process, etc.

Abstract: This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source. A deposition process step is performed in which metal vapor is produced from a target of a PVD source. Location and sputter efficiency at the target surface is enhanced by moving a magnet pack to create a traveling or sweeping magnetic field envelope. The target is energized from a DC power supply and pressures effective for an efficient thermalization of the sputtered atoms (30<p<100 mTorr) are maintained in the chamber during deposition. A uniform thickness of the metal on the wafer is produced within each magnet sweeping cycle.

Abstract: A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.

Abstract: A magnetic arrangement for a planar magnetron, in which an initial magnetic pole encompasses a second magnetic pole. This magnetic arrangement is moved linear in longitudinal direction to a target by a specific value and then moved back in opposite direction by the same value. In one version, an additional perpendicular motion is effected. The magnet arrangement is designed so that north and south pole interlock and waviform racetracks are generated. This enables constant sputtering from the entire target surface.

Abstract: A method for depositing a coating using a magnetron sputtering apparatus and a magnetron sputtering apparatus comprising: a support structure comprising a hollowed shaft comprising a central conduit having a longitudinal axis; a sputter target material defining a bore which is external to the central conduit, the bore also having the longitudinal axis a magnet assembly supported about the support structure, the magnet assembly having a first end, a second end, and a plurality of magnets supported therebetween and being effective, upon rotation, to generate a circumferential external magnetic field about the sputter target material; a first sealed end extending radially inward from adjacent the sputter target material proximate the first end of the magnet assembly and a second sealed end extending radially inward from adjacent the sputter target material proximate the second end of the magnet assembly, wherein the first sealed end, the second sealed end, and the sputter target material seal the magnet assembly

Abstract: A generally rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron includes a closed plasma loop formed in a convolute shape, for example, serpentine or rectangularized helix with an inner pole of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole having the opposed polarity.

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract: A method and apparatus for sputter deposition. The method including: providing a sputter target having a back surface and an exposed front surface; providing a source of magnetic field lines, the magnetic field lines extending through the sputter target from the back surface to the exposed front surface of the sputter target; providing one or more pole extenders between magnetic poles of the source of the magnetic field lines and the exposed front surface of the sputter target.

Abstract: A method and apparatus for uniformly eroding a sputtering target is disclosed. As a racetrack shaped magnetic field formed by a magnetron moves across the sputtering surface of the sputtering target, one or more magnets within the magnetron may swing or pivot relative to other magnets within the magnetron to reduce magnetic field pinching at the turns in the racetrack shaped magnetic field. The swinging or pivoting magnets alter the location on the magnetic field at a turn in the racetrack shape where the coordinate of the magnetic field perpendicular to the sputtering surface equals zero. By altering the location, sputtering target erosion uniformity may be increased.

Abstract: A method and apparatus for sputter deposition. The method including: providing a sputter target having a back surface and an exposed front surface; providing a source of magnetic field lines, the magnetic field lines extending through the sputter target from the back surface to the exposed front surface of the sputter target; providing one or more pole extenders between magnetic poles of the source of the magnetic field lines and the exposed front surface of the sputter target.

Abstract: A magnetron sputtering apparatus includes: a target provided in a sputtering chamber; a susceptor opposed to the target; a high-frequency power supply connected to the susceptor; a plate provided outside the sputtering chamber and coaxial with a central axis of the target; a rotary motion mechanism configured to rotate the plate about the central axis; S-pole magnets placed on one side of the plate with their S-pole end directed to the target; and first and second N-pole magnets placed on the one side of the plate with their N-pole end directed to the target. The first N-pole magnets are placed along a circle coaxial with the plate and opposed to an outer peripheral vicinity of the target. The S-pole magnets are placed inside the first N-pole magnets and along a circle coaxial with the plate. The second N-pole magnets are placed inside the S-pole magnets and along a circle coaxial with the plate.

Abstract: An apparatus and method for manufacturing a highly efficient flexible thin metal film-laminated strip by improves adhesiveness between a polyimide strip and a thin metal film, and removes stress from thin films laminated through magnetron sputtering, which is a dry deposition process. The stress-free flexible circuit board manufacturing method includes the steps of: a) depositing a seed layer on the substrate using the magnetron deposition source; b) depositing a compressive thin film using the single magnetron deposition source arranged next to the magnetron deposition source; c) depositing tensile thin film using the dual magnetron deposition source arranged next to the single magnetron deposition source; and d) repeating the steps b) and c) so as to sequentially and alternately deposit compressive thin films and tensile thin films thereby obtaining a thick film with a desired thickness.

Abstract: The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is located in the bearing housing for sealing the drive shaft to the housing. An at least one electrical contact is disposed between a power source and the cathode for transmittal of an oscillating or fluctuating current to the cathode. The electrical contact between the power source and the cathode is disposed inside of the vacuum chamber, greatly reducing, and almost eliminating, the current induced heating of various bearing, seals, and other parts of the rotatably sputter cathode assembly.

Abstract: A magnetron sputtering apparatus has a controller for selectively releasing the spread of plasma on a substrate on a support. The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target surface during intervals between deposition of target material onto a desired substrate, such as a wafer, and ensures that layers or flakes of back-scattered deposited target material do not build up on the target itself. A platen coil is located between the magnetron and the support to increase both uniformity and density of target material arriving nearly normal to the substrate surface.

Abstract: Method for manufacturing magnetron sputter-coated workpieces includes placing a substrate adjacent a magnetron source having a target cathode, generating above the target cathode, at least one plasma loop by an electron trap established by generating a magnetic field which forms, in top view on the target cathode, a magnet field loop and, viewed in cross-section on the target cathode, a tunnel-shaped arc field and, an electric field which crosses the magnetic field of the magnet field loop. Plasma density distribution above the target cathode is controlled by interacting a control anode with the electron trap in a control segment area of the plasma loop. Magnetron sputter-coating the substrate by the magnetron sputter-source then takes place.

Abstract: A method for fabricating semiconductor wafers using physical vapor deposition. The method includes maintaining a substrate on a susceptor in a chamber. The substrate has a face positioned within a vicinity of a target material, which is within the chamber. The target member comprises a first side and a second side. Preferably, the first side is positioned toward the face of the substrate. The method includes operating a magnet device fixed about a rotating member, which is coupled to the chamber and is coupled to a drive motor, which is coupled to a driver. A magnet device is positioned from a center region of the rotating member by a predetermined dimension. The method includes moving the magnet device in an annular manner about the center region using the rotating member. The magnet device is rotated at a velocity v and influences a spatial region, which is positioned overlying the second side of the target.

Abstract: According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of the substrate. During the sputtering, not only the targets but also magnetic field forming devices are moved relative to the targets, and therefore, a large area of the targets can be sputtered. In addition, when the magnetic field forming devices are also moved with respect to the substrate, the region of the target which is highly sputtered, moves with respect to the substrate, so that the thickness distribution of the film formed on the substrate can be even more uniform.

Abstract: A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.

Abstract: A magnetron sputtering electrode for use with a magnetron sputtering device, wherein the magnetron sputtering electrode comprises a cathode body, a drive unit coupled to the cathode body, a target received by the cathode body, and a closed loop magnet arrangement received within a magnet receiving chamber and coupled to the drive unit. The closed loop magnet arrangement is comprised of a plurality of magnets adapted for motion relative to the target by the drive unit, wherein at least one of the plurality of magnets is a profiled magnet having a contoured top portion. A method of improving target utilization in sputtering applications is also disclosed.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.

Abstract: The magnet arrangement and resulting rotating sputtering magnetron design of an embodiment provides magnetic flux density and distribution to penetrate thick production ferrous targets. Further, the magnetic field shape improves target life by more uniformly removing target material.

Abstract: In one embodiment, a magnetron sputtering apparatus forms a closed plasma loop and an open plasma loop within the closed plasma loop. The open plasma loop allows for relatively uniform erosion on the face of a target by broadening the sputtered area of the target. The open plasma loop may be formed and swirled using a rotating magnetic array to average the target erosion.

Abstract: A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.

Abstract: The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a power source which supplies positive and negative charge, and a gas distribution system. The gas distribution system may comprise a simple perforated gas delivery member, or it may comprise a perforated gas delivery member with an attached conductive anodic surface. The gas delivery member may also contain an inner conduit with further perforations which serves to baffle flow of the sputtering gas. Gas flow may be regulated within discrete portions of the gas distribution system. The anodic surfaces of the gas distribution system are cleaned through the action of plasma and gas flow, creating a more stable plasma and reducing the need for maintenance.

Abstract: The present invention is to provide a sputtering apparatus and a thin film formation method which make it possible to form respective layers of a multilayer film having a clean interface at a optimum temperature, or which make it possible to continuously carry out the film formation and the surface processing. Another object of this invention is to provide a small sputtering apparatus for forming a multilayer film as compared with prior art apparatus. A sputtering apparatus of this invention comprises a main shaft around which at least one target and at least one surface processing mechanism are installed, a substrate holder holding a substrate or a plurality of substrates arranged facing the target and the surface processing mechanism, and a rotation mechanism to rotate the main shaft or the substrate holder.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: A magnetron sputtering apparatus 1 is composed of a vacuum chamber 2, a target 3, a cathode 4 that holds the target 3 in the vacuum chamber 2, a substrate 5, an anode 6 that holds the substrate 5 and is allocated above the cathode 4 so as to face the substrate 5 toward the target 3 on the cathode 4, a permanent magnet 71 that generates magnetic field 141 and is allocated under the cathode 4, and a rotation controller 12 for rotating the permanent magnet 71 so as to pivot on a center axis of the target 3.

Abstract: A sweeping linear magnetron is described. The magnetron has a cathode backing plate, a drive housing attached to the cathode backing plate and a motor held in the drive housing. The motor drives a yoke positioned within a cut-out in the backing plate. The yoke has a magnet pack attached thereto said yoke such that the magnet pack is adapted to being moved over a target material and wherein the target material is being sputtered within a vacuum chamber onto a substrate.

Abstract: A self-sustained atmospheric pressure system for absorbing or scattering electromagnetic waves using a capillary discharge electrode configuration plasma panel and a method for using the same. Of particular interest is the application of this system to vary the level of exposure or duration of an object to electromagnetic waves, or as a diffraction grating to separate multiple wavelength electromagnetic waves into its respective wavelength components. The generation of the non-thermal plasma is controlled by varying the supply of power to the plasma panel. When a substantially uniform plasma is generated the plasma panel absorbs substantially all of the incident electromagnetic waves thereby substantially prohibiting exposure of the object (disposed downstream of the plasma panel) to the electromagnetic waves. If the generated plasma is non-uniform the plasma panel reflects at least some of the electromagnetic waves incident on its surface.

Abstract: In a magnetron sputtering chamber, a substrate is placed in the chamber and a deposition shield is maintained about the substrate to shield internal surfaces in the chamber. The deposition shield has a textured surface that may be formed by a hot pressing process or by a coating process, and that allows the accumulated sputtered residues to stick thereto without flaking off. An electrical power is applied to a high density sputtering target facing the substrate to form a plasma in the chamber while a rotating magnetic field of at least about 300 Gauss is applied about the target to sputter the target. Advantageously, the sputtering process cycle can be repeated for at least about 8,000 substrates without cleaning the internal surfaces in the chamber, and even while still generating an average particle count on each processed substrate of less than 1 particle per 10 cm2 of substrate surface area.