Abstract: An improved method for forming a copper layer (100). After the copper seed layer (116) is formed, any oxidized copper (118) at the surface is electrochemically reduced back to copper rather than being dissolved. Copper (120) is then electrochemically deposited (ECD) over the intact seed layer (116).

Abstract: The invention provides a pretreatment process for electroplating aluminum parts or strip, in which the zincating solution is modified to improve the adhesion of the subsequent electroplate to the substrate. The aluminum part or strip, such as an aluminum coin blank or strip for coin blanks, is pretreated with an improved zincate solution which provides hydroxide ions in an amount in the range of 75-175 gpl, zinc ions in an amount in the range of 15-40 gpl, nickel ions in an amount in the range of 2-10 gpl and copper ions in an amount in the range of 1.5-5 gpl. The pretreatment process preferably includes a copper strike applied from a copper cyanide strike bath at a pH in the range of 8.5-11.0, using a current density in the range of 0.1-10 A/dm2. The pretreatment and electroplating steps arc preferably conducted by barrel plating, in accordance with another aspect of the invention.

Abstract: An electroplating process for filling damascene structures on substrates, such as wafers having partially fabricated integrated circuits thereon, includes immersing a substrate, under bias, into a copper plating solution to eliminate thin seed layer dissolution and reduce copper oxide, an initiation step to repair discontinuities in a copper seed layer, superfill plating to fill the smallest features, reverse plating to remove the adsorbed plating additives and their by-products from the substrate, a second superfill plating to fill intermediate size features, a second reverse plating to remove adsorbed plating additives and their by-products from the substrate, and a bulk fill plating with high current density to fill large features. The superfill and reverse plating operations may be repeated more than twice prior to bulk filling in order to provide the desired surface morphology.

Abstract: A method for forming a nanolaminate structure is provided which comprises plating a substrate with layers of substantially a first metal and substantially a second metal using an electrolytic plating process and controlling the plating current to obtain a desired current density at the cathode, which is maintained within a predefined range.

Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.

Abstract: A method for producing a multiplicity of miniature cavities extending from a mold surface for molding a plastic product having features integrally molded with and extending from a product base, and a mold so produced. The mold cavities are formed by depositing multiple layers of plating material on a workpiece in a predetermined pattern selected to produce a desired mold cavity shape. The mold may be in the form of a roll or belt for continuous processing, or in any form for discrete injection molding. The invention is particularly applicable to the production of touch fastener products, such as those with arrays of miniature hooks.

Abstract: A copper foil for fine wiring is produced by forming on a bonding surface of a copper foil a composite metal layer comprising (I) copper, (II) at least one of tungsten and molybdenum and (III) at least one of nickel, cobalt, iron and zinc by carrying out electrolysis in a plating bath (A) containing ions of these metals and chloronium ions, and then forming a roughened layer comprising copper on the composite metal layer by carrying out electrolysis in a plating bath (B) containing copper ions at a current density not lower than a limiting current density of the plating bath to form a dendritic copper electrodeposition layer and then carrying out subsequent electrolysis at a current density lower than the limiting current density of plating bath to form nodular copper.

Abstract: A process for manufacturing a composite membrane for separation of hydrogen gas using palladium, which employs the step of electroplating under vacuum an alloy of a palladium compound and a transition metal.

Abstract: An apparatus for producing metal foil, comprising a drum cathode having an outer plating surface. The drum cathode is partially immersed to a set level in an electrolyte bath and is rotatable in a fixed direction about a generally horizontal axis. A main anode assembly having a main anode is immersed in the electrolyte bath, the main anode having a semi-cylindrical curved anode surface facing the drum cathode. The main anode is dimensioned to be spaced from the plating surface of the drum cathode so as to define a generally uniform gap therebetween. An energy source is connected to the main anode for energizing the main anode. A chamber containing an electrolyte solution is disposed above the electrolyte bath and adjacent the cathode drum where the cathode drum exits the electrolyte bath. A treatment anode is immersed in the electrolyte solution in the chamber adjacent the drum cathode. An energy source is connected to the treatment anode for energizing the treatment anode.

Abstract: There is provided a copper-plating liquid free from an alkali metal and a cyanide which, when used in plating of a substrate having an outer seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and can embed copper completely into the depth of the fine recesses.

Abstract: A one-step, integrated process and apparatus for producing electrolytic copper foil having a dual-layer copper bond-enhancing treatment electrodeposited on the matte side of the foil, which employs two “super anodes” on a rotating drum cathode to deposit the treatment.

Abstract: A method for electroplating copper in trenches, including the steps of providing a semiconductor substrate having a trench formed therein and electrolytically depositing a first copper containing layer having an upper surface and a predetermined thickness within the trench. The first copper deposition step has a first ratio of brighteners concentration:levelers concentration. Then a second copper containing layer having an upper surface and a predetermined thickness is electrolytically deposited over the first copper containing layer. The second copper deposition step has a second ratio of brighteners concentration:levelers concentration that is less than the said first ratio of brighteners concentration:levelers concentration. The second copper containing layer upper surface having a greater planarity than the first copper containing layer upper surface due to an increased concentration of levelers relative to the brighteners in the electrolytic bath.

Abstract: The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, ie., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

Abstract: A process for producing an electrodeposited copper foil, comprising the steps of: preparing an electrolyte having a copper concentration of 60 to 90 g/lit., preferably 60 to 85 g/lit., a free sulfuric acid concentration of 80 to 250 g/lit., preferably 100 to 250 g/lit., a chloride (Cl) ion concentration of 1 to 3 ppm and a gelatin additive concentration of 0.3 to 5 ppm and electrolyzing at 40 to 60° C. and at a current density of 30 to 120 A/dm2 preferably 30 to 75 A/dm2, to thereby electrodeposit a copper foil. The obtained electrodeposited copper foil is excellent in tensile strength and elongation.

Abstract: A compositionally modulated material electroplated film is deposited by using at least two source metal anodes in an electroplating apparatus, and changing at least one power setting of an electroplating power supply. In order to obtain sharp boundaries between successive layers of the film, voltage can be switched from an electroplating substrate to a dummy electrode immediately before the power setting is changed, in order to allow the electrolyte to equilibrate at a new set of solute concentrations, before electroplating on the substrate is recommenced.

Abstract: A compositionally modulated material electroplated film is deposited by using at least two source metal anodes in an electroplating apparatus, and changing at least one contact area between an anode an electrolyte. In order to obtain sharp boundaries between successive layers of the film, voltage can be switched from an electroplating substrate to a dummy electrode immediately before the contact area is changed, in order to allow the electrolyte to equilibrate at a new set of solute concentrations, before electroplating on the substrate is recommenced.

Abstract: A method and apparatus for electrochemically depositing a metal into a high aspect ratio structure on a substrate are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a first conductive material disposed thereon in a processing chamber containing an electrochemical bath, depositing a second conductive material on the first conductive material as the conductive material is contacted with the electrochemical bath by applying a plating bias to the substrate while immersing the substrate into the electrochemical bath, and depositing a third conductive material in situ on the second conductive material by an electrochemical deposition technique to fill the feature. The bias may include a charge density between about 20 mA*sec/cm2 and about 160 mA*sec/cm2. The electrochemical deposition technique may include a pulse modulation technique.

Abstract: A treated electrodeposited copper foil having a bond-enhancing copper layer, preferably a plurality of layers, electrodeposited on a bonding side of a base copper foil, a layer of co-deposited copper and arsenic electrodeposited on the bond-enhancing layer, and a zinc or zinc alloy layer electrodeposited on the copper/arsenic layer. A process for making such foil, and a copper-clad laminate wherein such foil is bonded to a polymeric substrate.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent confirm copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: Disclosed are methods of repairing metal seed layers prior to subsequent metallization. Such repair methods provide metal seed layers disposed on a substrate that are substantially free of metal oxide and substantially free of discontinuities.

Abstract: Copper is plated onto a substrate by plating a layer of copper onto the substrate to provide a maximum thickness of about 350 nanometers, followed by subjecting the copper coated substrate to an oxygen containing gaseous ambient in order to roughen the copper surface. Next, a second layer of copper is electroplated onto the structure to provide the desired thickness. The texture of the second layer of copper is independent of the underlayer of copper and has a random or at least substantially random texture.

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A composite material includes a structural carrier layer and a relatively thin metal foil layer separated by a release layer. The release layer, that may be an admixture of a metal such as nickel or chromium and a non-metal such as chromium oxide, nickel oxide, chromium phosphate or nickel phosphate, provides a peel strength for the metal foil layer from the carrier strip that is typically on the order of 0.1 pound per inch to 2 pounds per inch. This provides sufficient adhesion to prevent premature separation of the metal foil layer from the carrier layer, but easy removal of the carrier layer when desired. Typically, the metal foil layer is subsequently bonded to a dielectric and the carrier layer then removed. The metal foil layer is then imaged into circuit features in the manufacture of printed circuit boards and flexible circuits.

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A one-step, integrated process and apparatus for producing electrolytic copper foil having a dual-layer copper bond-enhancing treatment electrodeposited on the matte side of the foil, which employs two “super anodes” on a rotating drum cathode to deposit the treatment.

Abstract: A simplified process and apparatus for electrodepositing a bond-enhancing copper treatment layer on a surface of copper foil, preferably wherein a single treatment layer is uniformly applied on raw copper foil using a current density of from about 40 to about 100 A/ft2, a plating time of greater than 30 seconds, and the electrolyte is a copper sulfate-sulfuric acid solution containing arsenic, chloride ions and 2 imidazalidinethione. The raw foil is transferred to a station for applying the treatment directly from a rotating drum cathode machine on which it is produced, at the same speed at which the raw foil is produced, and then to a barrier layer station, a stainproofing station and a chemical adhesion promoter station, after which it is dried and coiled.

Abstract: An electroplating apparatus is provided with a metal target and a device for supporting a semiconductor wafer (or other workpiece) in an electroplating solution. The target (anode) may be located relatively far from the wafer surface (cathode) at the beginning of the plating process, until a sufficient amount of metal is plated. When an initial amount of metal is built up on the wafer surface, the target may be moved closer to the wafer for faster processing. The movement of the target may be controlled automatically according to one or more process parameters.

Abstract: Treated copper foil for use in the manufacture of copper-clad laminates for printed circuit boards, wherein a continuous, very thin cobalt barrier layer, which is substantially non-ferromagnetic, is electrodeposited on a copper bonding treatment electrodeposited on a bonding side of a base copper foil; and a process and electrolyte for producing such treated foil, wherein the electrolyte contains a low concentration of cobalt and certain addition agents.

Abstract: This invention provides a composite foil comprising an aluminum carrier layer and an ultra-thin copper foil having a protective layer disposed between them comprising a porous copper layer and an interpenetrating zinc layer. A process for producing such composite foils comprises the steps of preparing the surface of the aluminum carrier, electrodepositing a porous copper layer on the aluminum carrier layer followed by electrodepositing a zinc layer, and then electrodepositing two layers of copper to form the ultra-thin copper foil. The composite foil provides a uniform bond strength between the aluminum carrier and the protective layer which is adequate to prevent separation of the carrier and ultra-thin copper foil during handling and lamination, but which is significantly lower than the peel strength of a copper/substrate bond, so that the carrier can easily be removed after lamination of the composite foil to an insulating substrate.

Abstract: A method is provided for selectively electrochemically depositing copper. The method includes forming a layer of dielectric material above a structure layer, forming a conductive layer above the layer of dielectric material and forming an opening in the conductive layer and the layer of dielectric material. The method also includes selectively forming at least one barrier metal layer and a copper seed layer only in the opening, the at least one barrier metal layer and the copper seed layer being conductively coupled to the conductive layer. The method further includes forming an insulating layer above the conductive layer, and selectively electrochemically depositing copper only in the opening.

Abstract: A process and structure for enhancing electromigration resistance within a copper film using impurity lamination and other additives to form intermetallic compounds to suppress metal grain boundary growth and metal surface mobility of a composite copper film. The present invention provides an alloy seed layer and laminated impurities to incorporate indium, tin, titanium, their compounds with oxygen, and their complexes with oxygen, carbon, and sulfur into other films. The intermetallics form and segregate to grain boundaries during an annealing process to reduce copper atom mobility. A further aspect of the present invention is the use of high-temperature, inter-diffusion of additives included in an alloy seed layer to form a barrier layer by combining with materials otherwise unsuitable for barrier material functions.

Abstract: A process for producing a terminal metal pad structure electrically interconnecting a package and other components. More particularly, the invention encompasses a process for producing a plurality of corrosion-resistant terminal metal pads. Each pad includes a base pad containing copper which is encapsulated within a series of successively electroplated metal encapsulating films to produce a corrosion-resistant terminal metal pad.

Abstract: Treated electrolytic copper foil wherein the shiny side of the raw foil is modified and smoothed by an electrodeposited copper gilding layer, a copper-clad laminate produced with such foil, and an electrical circuit produced from such a laminate. The preferred foil has the surface of the shiny side of the raw foil modified by an electrodeposited copper gilding layer, a copper dendritic layer electrodeposited on the gilding layer, and a second copper gilding layer electrodeposited on the first dendritic layer, while a copper dendritic layer is electrodeposited on the surface of the matte side of the foil, and a copper gilding is electrodeposited on the latter dendritic layer.

Abstract: A method for electroplating a silicon substrate in manufacturing a semiconductive device is provided. Electroplating process chamber contacts or fingers used in positioning a silicon substrate or wafer during an electroplating process are plated with a metal layer to prevent oxidation of the contacts. Oxidation of the contacts may result in increased and varying resistance of the contacts and thus nonuniform plating of the silicon wafer and possibly even deplating of a seed layer. A 20 mA/cm.sup.2 current is applied to the contacts which are immersed in an electrolyte solution before loading a silicon wafer. A silicon wafer is then loaded into the electroplating process chamber containing the electrolyte solution. The preplating of the contacts enables the formation of a uniform metal layer on the silicon substrate. Additionally, voltage then may be applied to the contacts after unloading the silicon wafer to reduce oxidation.

Abstract: An improved process for the preparation of metallized ceramic substrates having a metal layer ranging from ten to two hundred microns in thickness, and having enhanced adhesion strength is provided. The process involves, in combination, a novel method for conditioning the ceramic substrate and the application of a thin intermediate layer of electrolessly and optionally, electrolytically, deposited metal prior to electrolytic metal deposition of an outer metallized layer.

Abstract: A method for manufacturing a photovoltaic device comprising a metal layer, a first transparent conductive layer, a semiconductor layer, and a second transparent conductive layer sequentially stacked on a substrate comprising iron, comprises the steps of forming the metal layer by electro-deposition of the metal layer from a solution and forming the first transparent conductive layer by electro-deposition of the first transparent conductive layer from a solution.

Abstract: The invention relates to a process for the preparation of a superconductor material of the mixed oxide type, such as oxides of the YBaCuO and Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 type. This process consists of the deposition by electrolysis on a conductive substrate of successive layers of metallic elements entering in the constitution of the superconductor material, using a single element in each layer and carrying out, following the deposition of at least one of the layers, an intermediate oxidation-reaction heat treatment for fixing the element of said layer before depositing the following layer, optionally repeating one or more times at least part of the aforementioned operations, and subjecting all the layers to a final, oxidation heat treatment to form the mixed superconductor oxide.

Abstract: A unique multi-layered coating process that includes coating the base metal with a layer of strike copper, a subsequent layer of bright copper, a barrier layer of palladium or related element, and a thin surface layer of a precious metal such as gold. The bright copper layer is produced by a special acid copper bath.

Abstract: This invention is predicated on the discovery by the present applicants that boric acid in conventional nickel plating baths is responsible for excessive lateral growth in the electroplating of nickel on nickel ferrite substrates. While nickel baths without boric acid do not yield acceptable electrodeposits, the boric acid interacts with the ferrite substrate to cause excessive lateral growth. Applicants further discovered that by eliminating the boric acid and adding another acidic plating buffer such as citric acid, one can obtain isotropic nickel plating and produce a wire-bondable surface.

Abstract: A process for electroplating palladium or a palladium alloy onto an iron-nickel alloy substrate, which comprises the steps of: i) electroplating a metal selected from the group consisting of copper, tin, a nickel-tin alloy and a copper-tin alloy onto the substrate to form a first primer layer; ii) electroplating nickel or a gold alloy onto the first primer layer to form a second primer layer; and iii) electroplating palladium or a palladium alloy onto the second primer layer to from a palladium or a palladium alloy electroplating layer.

Abstract: A metallic sheet for an electronic housing having a zinc coating on a steel base and a thin metal film, preferably a copper film, covering the zinc coating on one or both sides of the sheet, and a method of making the metal film. The metal film reduces whiskering of the zinc in the zinc coating. Whiskering can also be prevented on other metals anodic to copper such as, for example, tin and cadmium.

Abstract: A lead frame for a semiconductor device includes a base which is coated by a protective coating. The lead frame base is made of a ferrous material. The protective coating is made by sequentially electroplating a copper-containing layer, a silver-containing layer and a palladium-containing layer. Protective coatings constructed in this way are bondable, solderable, oxidation resistant, corrosion resistant, free of lead (Pb), resistant to high temperatures, cost effective, and cosmetically acceptable. It is also possible to use a layer of tin or a tin alloy in place of the silver layer.

Abstract: In a ceramic substrate with a thin-film capacitor, having a ceramic substrate a lower electrode layer formed on the ceramic substrate, a dielectric layer formed on the lower electrode layer and made of an oxide of a material constituting the lower electrode layer, and an upper electrode layer formed on the dielectric layer, a plating layer is provided between the ceramic base and the lower electrode layer to serve as a basis for the lower electrode layer.

Abstract: A method comprising the steps of (a) preparing a divided copper oxide dispersion (4) including a solvent and a selected binder, (b) applying said dispersion to a non-conductive substrate (1) to form a film (5), (c) forming a Cu film (9) with a suitable reagent, and (d) electrolytically depositing at least one metal film (11) on said film (9).

Abstract: Process for continuous manufacture of an electrical conductor consisting of an at least partially aluminium-based central core coated by continuous electrodeposition with at least one metal layer, including pretreatment of the surface of the core, characterized in that the following are subsequently performed successively on the core,a) an electrochemical deposition of copper in an aqueous bath maintained at a temperature of between 20.degree. C. and 60.degree. C., containing KCN, CuCN, K.sub.2 CO.sub.3 and KNaC.sub.4 H.sub.4 O.sub.6 with a current intensity of between 1 and 10 A/dm.sup.2 ;b) rinsing at ambient temperature;c) an electrochemical deposition of tin in an aqueous bath maintained at a temperature of between 20.degree. C. and 60.degree. C., containing essentially tin dissolved in methanesulphonic acid and, optionally, additives, with a current intensity of between 1 and 100 A/dm.sup.2 ;d) rinsing with water at 60.degree. C.

Abstract: A technique for utilizing an electric field to initiate electroless deposition of a material to form layers and/or structures on a semiconductor wafer. The wafer is disposed between a positive electrode and a negative electrode and disposed so that its deposition surface faces the positive electrode. A conductive surface on the wafer is then subjected to an electroless copper deposition solution. When copper is the conductive material being deposited, positive copper ions in the solution are repelled by the positive electrode and attracted by the negatively charged wafer surface. Once physical contact is made, the copper ions dissipate their charges by accepting electrons from the conductive surface, thereby forming copper atoms on the surface. The deposited copper have the catalytic properties so that when a reductant in the solution is absorbed at the copper sites and then oxidized, additional electrons are released into the conductive surface.

Abstract: Certain alloys of CoFeCu are provided in film and laminate form which have a unique combination of electromagnetic properties which enable them to be used as magnetic thin films in magnetic recording heads, shields and flux guides. The films and laminates thereof are electrodeposited from a plating bath in a DC or pulsed current electrodeposition process.

Abstract: A hollow container for storage and transport of fluid hydrocarbon vehicular fuels is composed of a laminated structure of polymeric resin body component and electrodeposited metal. An interior stratum of polymer chemically resistant to the fuel is joined to a stratum of electroplateable polymer disposed to the exterior of the interior stratum. The laminated polymeric structure is then electroplated to form a skin of metal encapsulating the interior polymeric strata. The tank combines the structural design flexibility of plastic with the metal barrier properties regarding evaporative emissions, permitting the use of high contents of oxygenated species in the fuel.

Abstract: A finishing process for a base metal substrate comprising the steps of polishing the surface of the base metal substrate, electroplating the metal substrate with copper, electroplating a layer of metal over the copper plate, and depositing a substantially moisture impervious coating on the metal layer.