Abstract: Methods for providing laminated coatings on metal articles using electroplating methods such as barrel plating, vibratory plating, rocker plating or other non-rack methods that involve movement of articles to be plated in a containment apparatus, as well as articles made from such processes. Embodiments of such processes involve mass-transfer modulation to provide compositionally modulated coatings.

Abstract: Materials and methods for generating nanowires are described. Krogmann salt potassium tetracyanoplatinate sesquihydrate (K(def)TCP) nanowires are synthesized as interconnects on metal lithographic patterns in which the K(def)TCP nanowires grow across the metal lines. The chemical sensing capability of the K(def)TCP chips is demonstrated by impedance measurements.

Abstract: Provided is a plating solution for a threaded connection used for forming a plating film excellent in galling resistance, crevice corrosion resistance, and exposure corrosion resistance. The plating solution contains no cyanide, but contains copper pyrophosphate, tin pyrophosphate, zinc pyrophosphate, pyrophosphate as a metal complexing agent, and a sulfur-containing compound of 40 g/L or less (excluding 0). The sulfur-containing compound includes: a mercapto compound and a sulfide compound defined by Chemical Formula (1); a dimer formed through a disulfide bond of the mercapto compounds; and one or more types of salts thereof: RS—(CHX1)m—(CHX2)n—CHX3X4??(1), where each of m and n is an integer of 1 or 0; each of X1, X2, X3 and X4 is any one of hydrogen, OH, NH2, SO3H, and CO2H, but excluding that X1, X2, X3, and X4 are all hydrogen; and R is any one of hydrogen, a methyl group, and an ethyl group.

Abstract: The present invention provides a copper-nickel alloy electroplating bath which is characterized by containing (a) a copper salt and a nickel salt, (b) a metal complexing agent, (c) a plurality of conductivity-imparting salts that are different from each other, (d) a compound that is selected from the group consisting of disulfide compounds, sulfur-containing amino acids and salts of these compounds, (e) a compound that is selected from the group consisting of sulfonic acid compounds, sulfimide compounds, sulfamic acid compounds, sulfone amides and salts of these compounds, and (f) a reaction product of a glycidyl ether and a polyhydric alcohol. This copper-nickel alloy electroplating bath is also characterized by having a pH of 3-8.

Abstract: Disclosed are metal plating compositions and methods. The metal plating compositions provide good leveling performance and throwing power.

Abstract: Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.

Abstract: Task: To provide an electrodeposited copper alloy foil with large mechanical strength under normal conditions, and that does not easily degrade due to heat when heated to about 300° C. Resolution Means: An electrodeposited copper alloy foil that includes a metal that exists as an oxide in a solution at pH4 or less or an oxide of the metal, and a method of manufacturing same.

Abstract: A cyanide-free electrolyte composition for the galvanic deposition of a copper layer on substrate surfaces and a method for the deposition of such layers. The electrolyte composition comprises at least copper(II) ions, a hydantoin and/or hydantoin derivative, a di- and/or tricarboxylic acid or salts thereof, and a metalate of an element of the group consisting of molybdenum, tungsten and vanadium and/or a cerium compound.

Abstract: Disclosed is an electroplating method for filling cavities, through holes, blind holes, or micro blind holes of a work piece with metals. According to said method, the work piece containing cavities, through holes, blind holes, or micro blind holes is brought in contact with a metal deposition electrolyte, and a voltage is applied between the work piece and at least one anode such that a current flow is fed to the work piece. The invention method is characterized in that the electrolyte encompasses a redox system.

Abstract: The invention relates to an electrolytic copper alloy foil having large mechanical strength in an ordinary state and showing resistant to heat deterioration even when it is heated to 300° C. or more. That electrolytic copper alloy foil, which contains tungsten copper, preferably incorporates tungsten into copper foil as a copper alloy, has a tensile strength at ordinary temperature of 650 MPa, has a tensile strength after heat treatment at 300° C. for 1 hour of 450 MPa or more, and has a conductivity of 80% or more. Further preferably, the electrolytic copper foil has an elongation at ordinary temperature of 2.5% or more and an elongation after treatment at 300° C. for 1 hour of 3.5% or more. The electrolytic copper foil is produced by adding a thiourea compound, tungsten salt, and chloride ions to a sulfuric acid-copper sulfate electrolyte and performing electrolytic deposition.

Abstract: Plating bath solutions and methods for depositing selenium generally include an aqueous plating bath containing a soluble selenium source and a soluble surfactant additive, wherein the soluble surfactant additive is selected from the group consisting of an alkane sulfonic acid, an alkane phosphonic acid and mixtures thereof, wherein the alkane group defining the alkane sulfonic acid and the alkane phosphonic acid has less than 25 carbon atoms The method includes immersing a conductive substrate to be plated into the aqueous plating bath; and electroplating selenium onto the substrate to form a continuous and particle free film.

Abstract: Provided is a metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating, wherein the copper plated layer or copper alloy plated layer comprises three layers to one layer of the copper layer or copper alloy layer, and there is a concentrated portion of impurities at the boundary of the copper layer or copper alloy layer when the copper layer or copper alloy layer is three layers to two layers, and there is no concentrated portion of impurities when the copper layer or copper alloy layer is a single layer. Additionally provided are a method of producing the composite and a method of producing an electronic circuit board.

Abstract: The present invention relates to an anode system for conventional electrolysis cells, a process for the production thereof and its use for the deposition of electrolytic coatings. The anode system is characterized in that the anode (2) is in direct contact with a membrane (3) which completely separates the anode space from the cathode space. This anode system is therefore a direct-contact membrane anode.

Abstract: Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.

Abstract: The invention is an apparatus and method for forming highly uniform layers of metal on a substrate by electro-deposition. The substrate is electroplated in a bath composed of a quiescent (i.e., no external agitation) electrolyte solution using an effective constant current density carefully selected to match the chemical composition of the electrolyte.

Abstract: Presented are one or more aspects and/or one or more embodiments of catalysts, methods of preparation of catalyst, methods of deoxygenation, and methods of fuel production.

Abstract: Presented are one or more aspects and/or one or more embodiments of catalysts, methods of preparation of catalyst, methods of deoxygenation, and methods of fuel production.

Abstract: The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base.

Abstract: The invention relates to an anti-fretting layer (5) for a multi-layer plain bearing (1), the anti-fretting layer being composed of a copper-based alloy, which in addition to copper as the main alloying element contains at least one element from the group comprising germanium, tin, indium, zinc, nickel, cobalt, bismuth, lead, silver and antimony and unavoidable impurities originating from production, wherein the total fraction of said alloying elements is at least 1 wt. % and at most 30 wt. %, and wherein copper mixed-crystal grains comprising copper and the at least one element are present in the copper alloy, wherein the copper mixed-crystal grains are oriented in such a way that an orientation index M{hkl} according to formula (I) M ? { hkl } = I ? { hkl } ? ? I 0 ? { hkl } I 0 ? { hkl } ? ? I ? { hkl } of each of the lattice plane sets {hkl} has a value of less than 3.

Abstract: Disclosed are metal plating compositions for plating a metal on a substrate. The metal plating compositions include compounds which influence the leveling and throwing performance of the metal plating compositions. Also disclosed are methods of depositing metals on a substrate.

Abstract: Disclosed are metal plating compositions and methods. The metal plating compositions provide good leveling performance and throwing power.

Abstract: Aspects of the present inventions include an electrodeposition solution for deposition of a thin film that includes a Group VA material, a method of electroplating to deposit a thin film that includes a Group VA material, among others.

Abstract: A method of making colloidal sphere templates and the sphere-templated porous materials made from the templates. The templated porous materials or thin films comprise micron and submicron-scaled spheres in ordered, disordered, or partially ordered arrays. The invention is useful in the synthesis of submicron porous, metallic tin-based and other high capacity anode materials with controlled pore structures for application in rechargeable lithium-ion batteries. The expected benefits of the resulting nanostructured metal films include a large increase in lithium storage capacity, rate capability, and improved stability with electrochemical cycling.

Abstract: Disclosed herein is a method of forming a CIGS thin film, comprising the steps of: immersing a substrate comprising an electrode into an electrolyte solution comprising Na2SO4, a water-soluble copper (Cu) precursor, a water-soluble indium (In) precursor, a water-soluble gallium (Ga) precursor, and a water-soluble selenium (Se) precursor; performing electrodeposition in such a way as to apply a direct current (DC) voltage of ?0.95V˜?0.85V to the electrolyte solution at room temperature and normal pressure for 10˜120 minutes to form a preliminary CIGS thin film; and heat-treating the preliminary CIGS thin film at 230˜270° C. to form a CIGS thin film.

Abstract: Disclosed are metal plating compositions for plating a metal on a substrate. The metal plating compositions include compounds which influence the leveling and throwing performance of the metal plating compositions. Also disclosed are methods of depositing metals on a substrate.

Abstract: Disclosed are metal plating compositions and methods. The metal plating compositions provide good leveling performance and throwing power.

Abstract: Electrochemical cells including a casing or cup for direct electrical contact with a negative electrode or counter electrode and serving as the current collector for the electrode. The casing includes a substrate having a plated coating of an alloy including copper, tin and zinc, the coating having a composition gradient between the substrate and the external surface of the coating wherein the copper content is greater adjacent the substrate than at the external surface of the coating and the tin content is greater at the external surface of the coating than adjacent the substrate. Methods for forming a coated casing and an electrochemical cell including a coated casing are disclosed, preferably including providing an electrode casing with a coating utilizing variable current density plating that reduces discoloration of a surface exposed to the ambient atmosphere.

Abstract: Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.

Abstract: To develop stable, non-cyanide silver and silver alloy plating baths. The present invention is a silver and silver alloy plating bath, comprises: (A) a soluble salt, comprising a silver salt or a mixture of a silver salt and a salt of a metal selected from the group consisting of tin, bismuth, cobalt, antimony, iridium, indium, lead, copper, iron, zinc, nickel, palladium, platinum, and gold; and (B) at least one aliphatic sulfide compound comprising a functionality selected from the group consisting of an ether oxygen atom, a 3-hydroxypropyl group, and a hydroxypropylene group, with the proviso that the aliphatic sulfide compound does not comprise a basic nitrogen atom.

Abstract: The invention relates to electroplating additives for the deposition of a group IB metal/binary or ternary group IB-group IIIA/ternary, quaternary or pentanary group IB-group IIIA-group VIA alloy on substrates useful for thin film solar cells. The additives have the general formula (A): wherein X1 and X2 may be the same or different and are selected from the group consisting of arylene and heteroarylene; FG1 and FG2 may be the same or different or are selected from the group consisting of —S(O)2OH, —S(O)OH, —COOH, —P(O)2OH and primary, secondary and tertiary amino groups and salts and esters thereof; R is selected from the group consisting of alkylene, arylene or heteroarylene and n and m are integers from 1 to 5.

Abstract: Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.

Abstract: A method of processing a printed wiring board. Initial processing steps are implemented on the printed wiring board. Copper is plated on the printed wiring board from a bath containing nickel and copper. Nickel is plated on the printed wiring board from a bath containing nickel and copper and final processing steps are implemented on the printed wiring board.

Abstract: A method is provided for imparting corrosion resistance onto a surface of a substrate. The method comprises contacting the surface of the substrate with an electrolytic plating solution comprising (a) a source of deposition metal ions of a deposition metal selected from the group consisting of zinc, palladium, silver, nickel, copper, gold, platinum, rhodium, ruthenium, chrome, and alloys thereof, (b) a pre-mixed dispersion of non-metallic nano-particles, wherein the non-metallic particles have a pre-mix coating of surfactant molecules thereon; and applying an external source of electrons to the electrolytic plating solution to thereby electrolytically deposit a metal-based composite coating comprising the deposition metal and non-metallic nano-particles onto the surface.

Abstract: [Problems] To provide a method for producing a rare earth metal-based permanent magnet having on the surface thereof a copper plating film by using a novel plating solution for use in a copper electroplating treatment capable of forming a copper plating film having excellent adhesiveness on the surface of a rare earth metal-based permanent magnet. [Means for Resolution] The method for producing a rare earth metal-based permanent magnet having a copper plating film on the surface thereof according to the invention is characterized in that it comprises forming a copper plating film on the surface of a rare earth metal-based permanent magnet by means of a copper electroplating treatment by using a plating solution having its pH adjusted to a range from 9.0 to 11.5 and containing at least the following three components: (1) Cu2+ ions, (2) a chelating agent having a chelate stability constant of 10.0 or higher for Cu2+ ions, and (3) a chelating agent having a chelate stability constant of 16.

Abstract: The invention relates to an electrolytic deposition in the form of a gold alloy with a thickness of between 1 and 800 microns and which includes copper. According to the invention, the deposition includes indium as the third main compound. The invention concerns the field of electroplating methods.

Abstract: The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.

Abstract: A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.

Abstract: The proposed invention comprises a process for plating upon zinc die cast articles without the use of cyanide in the plating solution The process proposes the plating of the zinc die cast articles with a zinc alloy layer first, followed by plating with copper, nickel, chromium, tin or brass. The preferred zinc alloy initial coating is zinc-nickel.

Abstract: A silver and silver alloy plating bath, includes (A) a soluble salt, having a silver salt or a mixture of a silver salt and a salt of a metal such as tin, bismuth, indium, lead, and the like; and (B) a particular aliphatic sulfide compound, such as thiobis(diethyleneglycol), dithiobis(triglycerol), 3,3?-thiodipropanol, thiodiglycerin, 3,6-dithiooctane-1,8-diol, and the like, which contain at least one or more of an ether oxygen atom, a 1-hydroxypropyl group, a hydroxypropylene group, or two or more of a sulfide bond in the molecule, and not containing a basic nitrogen atom.

Abstract: Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.

Abstract: There is disclosed articles for and methods of confining volatile materials in the void volume defined by crystalline void materials. In one embodiment, the hydrogen isotopes are confined inside carbon nanotubes for storage and the production of energy. There is also disclosed a method of generating various reactions by confining the volatile materials inside the crystalline void structure and releasing the confined volatile material. In this embodiment, the released volatile material may be combined with a different material to initiate or sustain a chemical, thermal, nuclear, electrical, mechanical, or biological reaction.

Abstract: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

Abstract: A substrate processing method makes it possible to fill interconnect recesses, such as trenches, with a defect-free interconnect material by carrying out electroplating directly on a surface of a ruthenium film as a barrier layer. The substrate processing method comprises: providing a substrate having interconnect recesses formed in a substrate surface and having a ruthenium film formed in the entire substrate surface including interior surfaces of the interconnect recesses; keeping the substrate surface in contact with a plating solution for a predetermined time to adsorb an additive in the plating solution onto the ruthenium film, and then carrying out electroplating to form a conductive film on a surface of the ruthenium film.

Abstract: Designs, fabrication and applications of nanostructures made of an alloy of two or more different metal elements to provide a unique identification code based on the composition of the alloy. Such compositionally encoded nanostructures can be in various geometries including but not limited to nanoparticles, nanowires and nanotubes. In one example, a single-step electroplating process may be used to form alloy nanowires without separate electroplating steps.

Abstract: A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Abstract: The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI<SB>Y</SB> compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

Abstract: The object is to provide a method of manufacturing electrodeposited copper foil with a carrier foil for high-temperature heat-resistance in which the peeling of the carrier foil is easy even by press working at temperatures of not less than 200°C.

Abstract: A composition for electrodeposition of a metal on a work piece, which electrodeposition is conducted at an electrodeposition temperature, is provided. The composition comprises a metal salt, a polymer suppressor having a cloud point, an accelerator and an electrolyte. If the cloud point is greater than the electrodeposition temperature, an anion is also present in an amount sufficient to lower the cloud point of the polymer suppressor to a temperature approximately no greater than the electrodeposition temperature.

Abstract: A method for forming a plating film, comprising the steps of: applying a plating film onto an object to be plated at a first current density for a predetermined period in a plating bath having a cathode capable of varying current and an anode and; and maintaining the object to be plated at a second current density lower than the first current density. According to the present invention, it is possible to improve solderability of a plating film for conventional lead-free solder by a simple method, which allows the productivity to further enhanced, resulting in a plating film with reduced production costs.

Abstract: A new copper foil structure with enhanced flexibility and its fabrication method thereof are disclosed. This inventive structure includes a copper base foil having a matte side and shiny side, and a more thermally stable deposited layer overlying at least the matte side of the copper base foil.