Abstract: Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle.

Abstract: Techniques for manufacturing carbon nanotube (CNT) ropes are provided. In some embodiments, a CNT rope manufacturing method optionally includes preparing a metal tip, preparing a CNT colloid solution, immersing the metal tip into the CNT colloid solution; and withdrawing the metal tip from the CNT colloid solution.

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: A supply of metal parts are electroplated by progressively transferring the parts with a computer controlled robot into a series of open top tanks containing solutions. The tanks have submerged metal fixtures which temporarily support the parts, and each fixture in the electroplating tank is individually connected to a direct current power source through a corresponding timer switch controlled by the computer so that each part is plated for a precise time period independently of the time the part remains in the plating solution. Each fixture is coated with an insulation material and has a base with metal contact with a removable fixture member having limited metal line contact with the supporting part. A plurality of electroplating lines each include the above components, and common tanks in the lines receive an electroplating solution recirculated through a common filter and service tank where the solution is heated and controlled.

Abstract: Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area.

Abstract: Disclosed are embodiments of an electroplating system and an associated electroplating method that allow for depositing of metal alloys with a uniform plate thickness and with the means to alter dynamically the alloy composition. Specifically, by using multiple anodes, each with different types of soluble metals, the system and method avoid the need for periodic plating bath replacement and also allow the ratio of metals within the deposited alloy to be selectively varied by applying different voltages to the different metals. The system and method further avoids the uneven current density and potential distribution and, thus, the non-uniform plating thicknesses exhibited by prior art methods by selectively varying the shape and placement of the anodes within the plating bath. Additionally, the system and method allows for fine tuning of the plating thickness by using electrically insulating selectively placed prescribed baffles.

Abstract: An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias.

Abstract: An electro chemical deposition system is described for forming a feature on a semiconductor wafer. The electro chemical deposition is performed by powering electrodes that includes a cathode, an anode and a plurality of electrically independent auxiliary electrodes.

Abstract: The technology described herein sets forth methods of making low stress or stress free coatings and articles using electrodeposition without the use of stress reducing agents in the deposition process. The articles and coatings can be layered or nanolayered wherein in the microstructure/nanostructure and composition of individual layers can be independently modulated.

Abstract: Disclosed are embodiments of an electroplating system and an associated electroplating method that allow for depositing of metal alloys with a uniform plate thickness and with the means to alter dynamically the alloy composition. Specifically, by using multiple anodes, each with different types of soluble metals, the system and method avoid the need for periodic plating bath replacement and also allow the ratio of metals within the deposited alloy to be selectively varied by applying different voltages to the different metals. The system and method further avoids the uneven current density and potential distribution and, thus, the non-uniform plating thicknesses exhibited by prior art methods by selectively varying the shape and placement of the anodes within the plating bath. Additionally, the system and method allows for fine tuning of the plating thickness by using electrically insulating selectively placed prescribed baffles.

Abstract: A plating apparatus can form a bump having a flat top or can form a metal film having a good in-plane uniformity even when the plating of a plating object (substrate) is carried out under high-current density conditions. The plating apparatus includes a plating tank for holding a plating solution; an anode to be immersed in the plating solution in the plating tank; a holder for holding a plating object and disposing the plating object at a position opposite the anode; a paddle, disposed between the anode and the plating object held by the holder, which reciprocates parallel to the plating object to stir the plating solution; and a control section for controlling a paddle drive section which drives the paddle. The control section controls the paddle drive section so that the paddle moves at a velocity whose average absolute value is 70 cm/sec to 100 cm/sec.

Abstract: A gated electrode structure for altering a potential and electric field in an electrolyte near at least one working electrode is disclosed. The gated electrode structure may comprise a gate electrode biased appropriately with respect to a working electrode. Applying an appropriate static or dynamic (time varying) gate potential relative to the working electrode modifies the electric potential and field in an interfacial region between the working electrode and the electrolyte, and increases electron emission to and from states in the electrolyte, thereby facilitating an electrochemical, electrolytic or electrosynthetic reaction and reducing electrode overvoltage/overpotential.

Abstract: A semiconductive counter electrode covers a highly electronically conductive electric current buss. The semiconductive counter electrode is impervious to ion flow. A substrate holder is operable to hold a substrate and to form a thin fluid gap between the semiconductive counter electrode and a substrate surface. A thin liquid electrolyte layer is located in the thin fluid gap. A power supply connected to the electric current buss and a peripheral edge of a conductive substrate surface is able to generate a potential difference between the electric current buss and the semiconductive counter electrode, on one side of the electrolyte layer, and the substrate on the other side. The semiconductive counter electrode provides a substantial resistance in the various current flow paths between the electric current buss and the semiconductive counter electrode, on one side, and the conductive substrate surface, on the other, thereby enhancing control of current distribution.

Abstract: The present disclosure generally addresses the problem of controlling a plating profile in multi-step recipes and addresses, in particular, the problem of compensating for variations of the plating tool state to stabilize the plating results. The compensation is done by adjustments of corrections factors for currents of a plating tool in a multi-anode configuration. The described method enables control of recipes with different current ratios in each recipe step and models different deposition sensitivities in each recipe step. Generally, the method of the present disclosure requires a measurement step, where the tool state is determined, and a data processing step, where the correction factors are set based on models describing the plating process and the tool state.

Abstract: A mercury vapour sensor in which the sensor surface is a gold substrate, and gold nanostructures with controlled crystallographic facets are strongly adhered to the substrate. A substantial increase in response magnitude and stability of a quartz crystal microbalance (QCM) based mercury vapour sensor is achieved using this sensor surface. The method of forming gold nanostructures on a gold substrate includes the steps of electrodepositing gold onto a gold working electrode from a solution of hydrogen or alkali metal tetrahaloaureate (III) and an additive such as lead acetate at an electro-deposition temperature between 20 and 40° C. and a deposition time of at least 15 seconds. The growth is controlled by the composition of the deposition solution, the temperature and the current density. The deposition rates may be varied as will the deposition times which are preferably about 150 seconds but may be as long as 15 minutes. The preferred deposition solution contains 2.

Abstract: Electrochemical cells including a casing or cup for direct electrical contact with a negative electrode or counter electrode and serving as the current collector for the electrode. The casing includes a substrate having a plated coating of an alloy including copper, tin and zinc, the coating having a composition gradient between the substrate and the external surface of the coating wherein the copper content is greater adjacent the substrate than at the external surface of the coating and the tin content is greater at the external surface of the coating than adjacent the substrate. Methods for forming a coated casing and an electrochemical cell including a coated casing are disclosed, preferably including providing an electrode casing with a coating utilizing variable current density plating that reduces discoloration of a surface exposed to the ambient atmosphere.

Abstract: The invention is directed to an assembly for electroplating comprising an electroplating bath and non-conductive plates. The invention is also directed to an assembly for electroplating comprising an electroplating bath, elements with electrically adjustable resistance, and ampere-hour meters. The invention is further directed to methods for monitoring, controlling and adjusting the thickness distribution of an electroplated material on an object. The object can be of any shape as long as it can electrically charged.

Abstract: Micro-fluid ejection heads have anti-reflective coatings. The coatings destructively interfere with light at wavelengths of interest during subsequent photo imaging processing, such as during nozzle plate imaging. Methods include determining wavelengths of photoresists. Layers are applied to the substrate and anodized. They form an oxidized layer of a predetermined thickness and reflectivity that essentially eliminates stray and scattered light during production of nozzle plates. Process conditions include voltages, biasing, lengths of time, and bathing solutions, to name a few. Tantalum and titanium oxides define further embodiments as do layer thicknesses and light wavelengths.

Abstract: An adjustable anode assembly for a wet processing apparatus to allow selective tuning of the electrical field density distribution within a wet process chemical of the apparatus, which in turn allows the process specification or specifications to be selectively varied across the process surface of a wafer when processed by the apparatus. The adjustable anode assembly includes an anode which may be divided into several plates, at least one of which is capable of being moved from a first plane to at least a second plane.

Abstract: A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 ?m in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.

Abstract: An apparatus and method is disclosed for simultaneously electroplating at least two parts in a series electrical configuration in an electroplating system using a shared electrolyte with excellent consistency in thickness profiles, coating weights and coating microstructure. Parts in high volume and at low capital and operating cost are produced as coatings or in free-standing form.

Abstract: Exemplary embodiments of a method, system, and apparatus for electro-plating an alloy upon a cathode. For example, a bath which includes disodium tungstate and an iron group substrate in an aqueous solution with a complexant to form complexes which remain in suspension in the bath can be provided. Further, the bath can be maintained at a temperature in the range of approximately 50-90° C. and at a pH in the range of approximately 5 to 7 and a current density in the range of approximately 1 to 4 Adm?2.

Abstract: A process for treating the surface of a metal substrate comprising a constituent metal selected from the group consisting of Cr, Cu, Mn, Mo, Ag, Au, Pt, Pd, Rh, Pb, Sn, Ni, Zn, in some cases Fe, and alloys of these metals. An anodic potential is applied to the metal surface in an electrolytic circuit comprising the metal surface, a cathode, and an electrolytic solution that is in contact with the metal surface and in electrically conductive communication with the cathode. The electrolytic solution may contain an electrolyte comprising anions of phosphate, phosphonate, phosphite, phosphinate, nitrate, borate, silicate, molybdate, tungstate, carboxylate, oxalate and combinations thereof. The anion may comprise a polymer having a pendent moiety selected from the group consisting of phosphate, phosphonate, phosphite, phosphinate, sulfate, sulfonate, carboxylate and combinations thereof.

Abstract: A plating method, employing a face-down manner of plating and using a resistor body between a substrate and an anode, can securely bring an entire surface to be plated of the substrate into contact with a plating solution without permitting intrusion of air bubbles to the surface to be plated. A resistor body is disposed above the anode and immersed in the plating solution, allowing the plating solution to flow along an upper surface of the resistor body from the periphery toward the center of the resistor body. Thus, a raised portion of the plating solution is created in the center of the upper surface of the resistor body. The substrate is then lowered with the surface facing downwardly so as to fill the space between the surface to be plated of the substrate and the upper surface of the resistor body with the plating solution.

Abstract: A multi-chambered system for electroplating metal layers on a semiconductor substrate. The system comprises a fluid reservoir having at least a first chamber and a second chamber. A cathode is located in the first chamber, an anode is located in the second chamber, and a shield is located between the cathode and anode. The cathode is configured to be electrically coupled to a semiconductor substrate locatable in the first chamber. The anode is configured to oppose a first major surface of the semiconductor substrate. The shield is configured to deter electrolytic fluid communication between the first and second chamber, other than through predefined openings in the shield.

Abstract: Device and method suitable for the electrochemical processing of an object. The device is provided at least with a chamber for accommodating an electrolyte, means for supporting the object to be processed in this chamber, electrodes arranged in this chamber, and control means for applying an electric current between the object to be processed and the electrodes.

Abstract: A method and apparatus for adjusting an electric field of an electrochemical processing cell are provided. In one embodiment, a capacitive element is disposed in the processing solution. The strength, shape, or direction of the electric field in the processing solution may be modulated by charging and discharging the capacitive element in a controlled manner. Because the electric field is modulated with out passing a current from the capacitive element to the processing solution, electrochemical reactions do not occur on the interface of the capacitive element and the processing solution, thus, reduces complications caused by unwanted electrochemical reactions.

Abstract: An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: step 101 of connecting a film-formation surface of a wafer 109 to a cathode electrode 107, making the film-formation surface inclined from the surface of a plating solution 103 and immersing the wafer 109 into the plating solution 103 with applying a first current between the cathode electrode 107 and an Cu anode electrode 105 disposed in the plating solution 103, and step 103 of, after immersing the film-formation surface in the plating solution 103, applying a second current between the cathode electrode 107 and the Cu anode electrode 105 to form a metal film on the film-formation surface by electrolytic plating. In step 101, the first current is controlled on the basis of an inclination angle between the liquid surface and the film-formation surface.

Abstract: A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.

Abstract: This invention discloses novel nanocomposite material structures which are strong, highly conductive, and fatigue-resistant. It also discloses novel fabrication techniques to obtain such structures. The new nanocomposite materials comprise a high-conductivity base metal, such as copper, incorporating high-conductivity dispersoid particles that simultaneously minimize field enhancements, maintain good thermal conductivity, and enhance mechanical strength. The use of metal nanoparticles with electrical conductivity comparable to that of the base automatically removes the regions of higher RF field and enhanced current density. Additionally, conductive nanoparticles will reduce the surface's sensitivity to arc or sputtering damage. If the surface is sputtered away to uncover the nanoparticles, their properties will not be dramatically different from the base surface.

Abstract: A method and apparatus for establishing more uniform deposition across one or more faces of a workpiece in an electroplating process. The apparatus employs eductors in conjunction with a flow dampener member and other measures to provide a more uniform current distribution and a more uniform metal deposit distribution as reflected in a coefficient of variability that is lower than conventional processes.

Abstract: The present invention generally relates to apparatus and methods for plating conductive materials on a substrate. One embodiment of the present invention provides an apparatus for plating a conductive material on a substrate. The apparatus comprises a fluid basin configured to retain an electrolyte, a contact ring configured to support the substrate and contact the substrate electrically, and an anode assembly disposed in the fluid basin, wherein the anode assembly comprises a plurality of anode elements arranged in rows.

Abstract: Disclosed is a structure that has a thickness of 100 ?m or greater and has regular micropores. A microstructure includes an aluminum or aluminum alloy oxide film which has cylindrical micropores extending from a bottom surface to a top surface of the microstructure. The micropores are arrayed at the bottom surface so as to have a degree of ordering as defined by general formula (1) of at least 70%, the center-to-center distance between neighboring micropores is from 300 to 600 nm and the axial length of the micropores is at least 100 ?m.

Abstract: A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

Abstract: A power control device (1) of a power network (2), which has a number of anodes (5) and a number of cathodes (3), of an electrochemical coating facility is disclosed, having a plurality of control modules (6), each control module (6) being configured to calculate and control a local current flow having a predetermined quantity as a function of the location and as a function of the time between an anode (5) and a cathode (3) of the power network (2).

Abstract: A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness profile may be generated from the thickness values.

Abstract: Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly.

Abstract: A conformal metallic layer is applied to a selected region of a substrate by forming a pattern of electrically conductive lines on the substrate, placing a bead of a selected metal on the substrate at an edge of the region selected for coating, and passing an electric current through the bead and through conductive lines that extend over the region of the substrate selected for coating with the electric current having a current density sufficient to melt the bead so that metallic material therefrom flows over the conductive lines to form the coating. A pair of electrically conductive connectors is placed in contact with the electrically conductive lines, and an electric power supply is connected to the pair of electrically conductive connectors such that electric current passes through the bead, melts the bead to form a liquid metal, and carries the liquid metal in a continuous stream along the conductive lines, coating the conductive lines conformally in the process.

Abstract: A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.

Abstract: In a method for production of a corrosion resistant and/or oxidation resistant coating, at least one metal of the platinum group or an alloy thereof is galvanically deposited onto a surface of a substrate, and thereafter the thusly galvanically coated substrate is aluminized. In a first stage of the galvanic deposition process a current magnitude applied for the galvanizing is increased continuously or step-wise beginning from an initial value up to a maximum value, and in a second stage of the galvanic deposition process the current magnitude applied for the galvanizing is maintained constant at the maximum value. The galvanic deposition of the or each metal of the platinum group or the corresponding alloy may be carried out using an open-celled or open-mesh or porous anode.

Abstract: The present inventions relate to selenium containing electrodeposition solutions used to manufacture solar cell absorber layers. In one aspect is described an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material. Also described are methods of electroplating using electrodeposition solutions.

Abstract: A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.

Abstract: A method for anodizing valve metal structures to a target formation voltage is described. The valve metal structures are placed in an anodizing electrolyte and connected to a power supply that generates a source voltage to at least one current limiting device. If at least two current limiting devices are used, they are in series with the valve metal structures with the one current limiting device connected to at least one structure. The valve metal structures are then subjected to a current that decreases over time, a formation voltage that increases over time to a level below the voltage from the power supply and a power level that is self-adjusted to a level that decreases excessive heating in the structure. The invention also includes the components for the method.

Abstract: Deposition of nanoparticles onto carbon surfaces is described. Metal and/or metal oxide ions are deposited on a carbon surface by electrodeposition, such as by immersing a carbon and an anode in a salt bath, and applying a number of electrical pulses having a defined pulse width. The size, coverage density, and metallic composition of the nanoparticles may be affected by the pulse width of the electrical pulses, the number of electrical pulses, and the chemical composition of the salt bath, respectively. The carbon may be anodized before electrodeposition. If the carbon is a carbon precursor, after electrodeposition, the carbon precursor is carbonized to form a carbon. After electrodeposition, the carbon may be activated to form an activated carbon. The nanoparticles may serve as catalysts for activation rugosity of mesoporous carbons. The catalytically activated carbon materials may be used in all manner of devices that contain carbon materials.

Abstract: In order to make plating thickness uniform in a metal plating apparatus, a metal plating apparatus capable of performing metal plating to a uniform thickness is provided by aligning lines of electric force uniformly and in parallel by disposing a pair of conductive perforated plates 20a and 20b, which are electrically connected to each other, between plating metals 16 immersed in a plating solution and an object 18 to be plated.

Abstract: A work piece is electroplated or electroplanarized using an azimuthally asymmetric electrode. The azimuthally asymmetric electrode is rotated with respect to the work piece (i.e., either or both of the work piece and the electrode may be rotating). The azimuthal asymmetry provides a time-of-exposure correction to the current distribution reaching the work piece. In some embodiments, the total current is distributed among a plurality of electrodes in a reaction cell in order to tailor the current distribution in the electrolyte over time. Focusing elements may be used to create “virtual electrode” in proximity to the surface of the work piece to further control the current distribution in the electrolyte during plating or planarization.

Abstract: An improved plating system comprises a plurality of non-electrically conductive shields forming an elongated upper channel and an elongated lower channel, the upper and lower channels each having a width less than or equal to one inch; a plurality of part holding clamps electrically coupled to a power source and positioned within the upper channel or the lower channel; a plating solution sparger comprising a series of inlets oriented to direct any plating solution flowing through the inlets into the lower channel and towards the upper channel; and a plurality of anodes positioned outside and along the length of the upper and lower channels.

Abstract: Techniques for manufacturing carbon nanotube network-based nano-composites are provided. In some embodiments, a nano-composite manufacturing method includes forming a carbon nanotube (CNT) network, immersing the CNT network into an electroplating solution, applying electrical energy, and relaying the electrical energy flow to produce a nano-composite having uniform conductive bridges on the CNT network.

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.