Abstract: A semiconductor workpiece holder used in electroplating systems for plating metal layers, such as copper, onto a semiconductor workpiece. The workpiece holder includes electrodes which extend and are partially submerged in a liquid plating bath. The electrodes have a contact face which bears against the workpiece and conducts current therebetween. The submersible portions of the electrodes are partially covered with a dielectric layer or surface and partially covered with a conductive layer or surface. The conductive surface is preferably spaced from the contact face and placed in direct contact with the plating bath to allow diversion of some of the plating current directly between the electrode and plating bath. Associated methods are also described.

Abstract: A method, system and structure for a pin grid or pad grid array structure includes a plurality of pins connected to an electronic structure, a power plane within the electronic structure electrically connected to power pins, a ground plane within the electronic structure, and fuse portions electrically connecting the ground plane to ground pins and signal pins. The power plane and the ground plane create a charge in the pins during electroplating of the pins. The fuse portions disconnecting the signal pins from the ground plane after the electroplating.

Abstract: An electroplating system for plating at least one metal on at least one substrate. At least one plating tank contains a plating solution including the at least one metal to be plated on the at least one substrate. At least one anode is arranged in the at least one plating tank. The at least one anode is at least partially immersed within the plating solution during plating of the at least one metal. At least one cathode includes at least one workpiece portion in contact with the at least one substrate and at least one thief portion arranged in the vicinity of at least one portion of the at least one substrate for controlling plating of the at least one metal on the at least one portion of the at least one substrate. At least one power supply is connected to the at least one cathode. At least one controller separately controls a flow of power to the at least one workpiece portion of the cathode and the at least one thief portion of the cathode.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A process and apparatus for conducting an electrically independent current through an anodized web to electro-deposit a coloring agent on the web. A preferred process includes the step of providing a continuous web of anodized aluminum; transferring with a charging plate a coloring current to the web with a charging plate in a first treatment cell over an area of the web sufficient to allow the current to pass through an anodic layer of the aluminum and flow through the web; and electro-depositing coloring agents on the web with the coloring current in a second treatment cell. Optionally, the web may be serially passed through additional treatment cells to apply a variety of different coloring currents to the web whereby the web may be colored with multiple coloring agents and consequently exhibit multiple colors and/or refractive properties.

Abstract: Bumps are formed by means of uniform plating in which air can be easily discharged.

Abstract: A method and apparatus are provided for the electroplating of a substrate such as a semiconductor wafer which provides a uniform electroplated surface and minimizes bum-through of a seed layer used on the substrate to initiate electroplating. The method and apparatus of the invention uses a specially defined multistep electroplating process wherein, in one aspect, a voltage below a predetermined threshold voltage is applied to the anode and cathode for a first time period followed by applying a current to the anode and cathode for a second time period the current producing a voltage below the predetermined threshold voltage. In another aspect of the invention, a current is applied to the anode and cathode substrate which current is preprogrammed to ramp up to a current value from a first current value which current produces a voltage below a predetermined threshold voltage.

Abstract: A method for forming a nanolaminate structure is provided which comprises plating a substrate with layers of substantially a first metal and substantially a second metal using an electrolytic plating process and controlling the plating current to obtain a desired current density at the cathode, which is maintained within a predefined range.

Abstract: An electrochemical reactor is used to electrofill damascene architecture for integrated circuits. A shield is used to screen the applied field during electroplating operations to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film seed layer of copper on the wafer.

Abstract: Disclosed are methods for depositing a copper seed layer on a substrate having a conductive layer. Such methods are particularly suitable for depositing a copper seed layer on a substrate having small apertures, and preferably very small apertures.

Abstract: There is disclosed an improved method for manufacturing printed circuit boards which solves the problem of immersion bath contaminants being plated-out onto electrically-conductive, circuit functional pads, (board-features) by introducing into the bath system a mechanism for attracting those contaminants to non-functional “micro-thieves” which are electrically-conductive, non-circuit-functional pads having substantially smaller dimensions than those of the smallest board-feature, thereby taking advantage of previously unknown immersion bath uncontrolled strike phenomena, whereby the contaminants are directed to the micro-thieves and away from the board-features. Application of the micro-thieves in the immersion bath environment also produces plated features, of both finer and larger geometries, having flatter surfaces and a more uniform plated thickness for all features on the printed circuit board, than previously obtained.

Abstract: An anode is configured to be used within a metal film plating apparatus. The anode has a substantially planar electric field generating portion and an electrolyte solution chemical reaction portion. The planar electric field generating portion is coated with an inert material that is impervious to the electrolyte solution. In one embodiment, the anode is formed as a perforated anode. In one aspect, the electric field generating portion is formed contiguous with the electrolyte solution chemical reaction portion. In another aspects, the planar electric field generating portion is formed as a distinct member from the electrolyte solution chemical reaction portion.

Abstract: This invention relates, particularly, to a plating method and apparatus for a substrate for uses, such as the filling of a metal, e.g., copper (Cu), into a fine interconnection pattern (recesses) formed in a semiconductor substrate.

Abstract: A compositionally modulated material electroplated film is deposited by using at least two source metal anodes in an electroplating apparatus, and changing at least one contact area between an anode an electrolyte. In order to obtain sharp boundaries between successive layers of the film, voltage can be switched from an electroplating substrate to a dummy electrode immediately before the contact area is changed, in order to allow the electrolyte to equilibrate at a new set of solute concentrations, before electroplating on the substrate is recommenced.

Abstract: A compositionally modulated material electroplated film is deposited by using at least two source metal anodes in an electroplating apparatus, and changing at least one power setting of an electroplating power supply. In order to obtain sharp boundaries between successive layers of the film, voltage can be switched from an electroplating substrate to a dummy electrode immediately before the power setting is changed, in order to allow the electrolyte to equilibrate at a new set of solute concentrations, before electroplating on the substrate is recommenced.

Abstract: The present invention provides an electrodeposition apparatus for continuously forming a film of an oxide on a substrate by electrodeposition, wherein an electrodeposition tank for retaining an electrodeposition bath is formed of a metal and the inside of the electrodeposition tank is kept electrically floating. This can form a uniform oxide film without irregularities on the substrate.

Abstract: In an electroplating apparatus, an electrolytic agent is filled into the portion between an anode and a dummy cathode which is opposite substantially face to face and parallel to the anode, and an electric current is supplied to this portion, thereby suppressing changes in properties of a black film during the period in which plating to a substrate to be processed is stopped. In particular, by applying an electric current to the anode immediately before plating to the substrate is resumed, the film formation characteristics of plating to the substrate can be maximally stabilized. This can reduce the consumption power and dissolution of the anode. This apparatus is particularly effective in copper plating in which the formation of a black film is significant.

Abstract: In order to make plating thickness uniform in a metal plating apparatus, a metal plating apparatus capable of performing metal plating to a uniform thickness is provided by aligning lines of electric force uniformly and in parallel by disposing a pair of conductive perforated plates 20a and 20b, which are electrically connected to each other, between plating metals 16 immersed in a plating solution and an object 18 to be plated.

Abstract: An apparatus and method for an electrodeposition or electroetching system. A thin metal film is deposited or etched by electrical current through an electrolytic bath flowing toward and in contact with a target on which the film is disposed. Uniformity of deposition or etching is promoted, particularly at the edge of the target film, by, baffle and shield members through which the bath passes as it flows toward the target. The baffle has a plurality of openings disposed to control the localized current flow across the cross section of the workpiece/wafer. Disposed near the edge of the target, the shield member shapes the potential field and the current line so that it is uniform.

Abstract: The invention relates to a device and a method for evening out the thickness of metal layers on electrical contact points on flat items to be treated 7, such as conductor foil and printed circuit boards, during the electrolytic treatment of the items to be treated, guided in a horizontal plane of conveyance in a continuous electroplating plant. The device has counter-electrodes 2, 3 located opposite the plane of conveyance and clamps 4, secured to a continuously revolving means of conveyance 5, for contacting the items to be treated 7. The clamps 4 have a lower portion 14 and an upper portion 13 which are electrically conductive, have a surface consisting of metal, are moveable in relation to one another and respectively have at least one contact point 6 for the items to be treated 7. In addition, at least one current source is provided to produce a flow of current between the counter-electrodes and the items to be treated.

Abstract: A multilayer engine bearing (10) includes a steel backing (12) having a liner (14) of bearing metal of either copper-lead or aluminum alloys formed on the backing (12). A multilayer overplate (24, 124) is formed on the base lining member (16) and includes at least a first layer (28, 128) electrodeposited from a bath at a first current density to a desired thickness, and at least one additional layer (26, 126) electrodeposited from the same bath but at a different current density and to a desired thickness to yield a composite lamellar overplate structure having layers with differing deposit characteristics, such as hard and soft layers, generated from the same bath at different current densities.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformnity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: Electrolytic plating of a workpiece is enhanced by providing a resistor between the workpiece and electrically conductive support member.

Abstract: The invention provides an apparatus and a method for achieving reliable, consistent metal electroplating or electrochemical deposition onto semiconductor substrates. More particularly, the invention provides uniform and void-free deposition of metal onto metal seeded semiconductor substrates having sub-micron, high aspect ratio features. The invention provides an electrochemical deposition cell comprising a substrate holder, a cathode electrically contacting a substrate plating surface, an electrolyte container having an electrolyte inlet, an electrolyte outlet and an opening adapted to receive a substrate plating surface and an anode electrically connect to an electrolyte. Preferably, a vibrator is attached to the substrate holder to vibrate the substrate in at least one direction, and an auxiliary electrode is disposed adjacent the electrolyte outlet to provide uniform deposition across the substrate surface.

Abstract: A curved component such as a turbine airfoil, shroud, or combustor centerbody is prepared with a platinum or a platinum-aluminide protective coating over only a portion of the surface thereof. The coating may serve as an environmental coating, or as a bond coat of a thermal barrier coating system. The partial coverage is achieved by depositing platinum only over a portion of the surface of the component, typically including the concave portion in the case of an airfoil, optionally depositing an aluminum layer, and optionally interdiffusing the platinum and aluminum layers.

Abstract: The object of the present invention is to provide an Oldham ring having uniform electroplating thickness and a scroll member type compressor comprising the same; in order to accomplish the above object, the electroplating process for plating an Oldham ring comprising a ring body and a plurality of key portions extending outwardly from the ring body of the present invention comprises the steps of: soaking the Oldham ring in a plating liquid; arranging at least two cathodes respectively on the inside wall of the ring body at positions corresponding to the areas between each adjacent pair of the key portions; and electroplating the Oldham ring by passing electric current between the cathodes and at least one anode contacting to the plating liquid.

Abstract: A novel method and apparatus of wet processing workpieces, such as electroplating semiconductor wafers and the like, that incorporates reciprocating processing fluid agitation to control fluid flow at the workpiece, and where electric fields are involved as in such electroplating, controlling the electric field distribution.

Abstract: A method for microplasma electrolytic processing a surface of an electroconductive material, involves establishing an electrical circuit between this material, as a first electrode, and a counterelectrode, as a second electrode, by immersing the first electrode into an electrolyte that is in contact with the second electrode and applying an electrical voltage across the first and second electrodes with a power source. In a first step, only a portion of the surface of the material is immersed in the electrolyte, the size of that portion being dependent on an output power of the power source, a composition of the material, an electric regime used, a composition of the electrolyte, and a minimal current density at which a process of microplasma oxidation is stable. The surface of the material is then completely immersed in the electrolyte while the voltage is regulated to cause a current value I(t) between the first and second electrodes ranging from 0.9I<I(t)1.

Abstract: A substrate (155) is placed into a plating bath (19, 59), a current in the bath is measured, and a film (110) is plated onto the substrate (155). In one embodiment the current is measured using a sensing array (57) positioned within the bath, and the measurement is used to control a plating deposition parameter. In an alternative embodiment the current is measured using the sensing array (57) and a characteristic of the plated film is controlled using a corresponding control array (53) also positioned within the plating bath (59).

Abstract: The present invention provides a plating apparatus and a method of plating, which improve the uniformity of the plate coat thickness without changing the flow velocity of feeding the plating solution.

Abstract: Both a process and plant are provided for electrolytically coating with a metal layer the casting surface of a roll for twin-roll or single-roll continuous casting of thin metal strip. The casting surface is at least partially immersed in an electrolyte solution containing a salt of the metal to be deposited, so as to face at least one anode. The surface is placed at a cathode and a relative movement is created between the casting surface and the electrolyte solution. Insulating masks are interposed between the anode or anodes and the arrises of the casting surface, the insulating masks preventing a concentration of the lines of current on the arrises and in their vicinity.

Abstract: A method of plating which improves the uniformity of a plated coating thickness without changing the flow velocity of a feed plating solution. An aperture at a center of a mesh anode electrode of a plating apparatus produces an electric field density distribution between the mesh anode electrode and a wafer that is lower in the central portion of the wafer than at the edge portion of the wafer.

Abstract: A transport system for the implementation of electrolytic deposition, coating or etching; and more particularly, an apparatus for selective electrolytic metallization and deposition utilizing a fluid head arrangement. A method is provided for making and maintaining an electrical contact with a product being processed in a transport system employed for selective electrolytic metallization and deposition, coating or etching. The method of making and maintaining an electrical contact with a product being processed may be utilizing a fluid head arrangement.

Abstract: A process and apparatus for forming oxide coatings on bodies of aluminum and aluminum alloys are described. The process includes forming an electrolyte bath in an inert container. At least two reactive metal bodies are suspended in the bath. The bodies are connected to electrodes which, in turn, are connected to a multiphase AC circuit. A multiphase power (preferably three-phase between three bodies) potential is imposed between each of the bodies. The bodies are moved in the electrolyte bath relative to each other until micro-arcs occur on the surfaces of the bodies, whereby to commence oxidation of the bodies. The imposition of the potential between each of the bodies is continued until the desired thickness of oxide is formed on the bodies.

Abstract: An anode container, electroplating system, method and object so plated. A feature of the invention is that an anode container has an interior cross-sectional area, at or near a lower end thereof, that is larger than an interior cross-sectional area of an upper end thereof. An anode-receiving container also has a body with a plurality of sides and a lower end having a larger cross-sectional interior area than an upper end. The container may also include punched out apertures positioned to provide strength to the container and an apparatus to vibrate the container coupled to a lower end of the container.

Abstract: Recovery of silver from a photographic fixer solution in an electrolytic cell is controlled so as to maintain a high current efficiency whilst minimizing unwanted side effects. The rate of change of plating voltage at constant current through the cell is monitored, and in response to detection of a maximum value thereof the current is reduced to a new constant level. Such control allows the cell to be operated continually at high current efficiency in response to changing chemical conditions within the cell.

Abstract: An apparatus for depositing an electrical conductive layer on the surface of a wafer includes a virtual anode located between the actual anode and the wafer. The virtual anode modifies the electric current flux and plating solution flow between the actual anode and the wafer to thereby modify the thickness profile of the deposited electrically conductive layer on the wafer. The virtual anode can have openings through which the electrical current flux passes. By selectively varying the radius, length, or both, of the openings, any desired thickness profile of the deposited electrically conductive layer on the wafer can be readily obtained.

Abstract: An electroplating system (30) and process makes electrical current density across a semiconductor device substrate (20) surface more uniform during plating to allow for a more uniform or tailored deposition of a conductive material. The electrical current density modifiers (364 and 37) reduce the electrical current density near the edge of the substrate (20). By reducing the current density near the edge of the substrate (20), the plating becomes more uniform or can be tailored so that slightly more material is plated near the center of the substrate (20). The system can also be modified so that the material that electrical current density modifier portions (364) on structures (36) can be removed without having to disassemble any portion of the head (35) or otherwise remove the structures (36) from the system. This in-situ cleaning reduces the amount of equipment downtime, increases equipment lifetime, and reduces particle counts.

Abstract: In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region.

Abstract: An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.

Abstract: An apparatus for measuring the throwing power of electroplating solutions which provides a nearly linear current density distribution across the panel. The apparatus includes a cylindrical body adapted for rotation about a longitudinal axis thereof, a cylindrical cathode arranged coaxially about a central portion of the cylindrical body, an anode coaxially positioned at a lower end portion of the cylindrical body, a conical shield coaxially arranged around an upper end portion of the cathode; and an annular disk-baffle coaxially arranged around a lower end portion of the cathode. The conical shield and the disk-baffle provide a substantially linear current distribution over the cathode.

Abstract: An electroplating system includes a tank that holds an electrolytic bath solution. An anode within the tank receives a first voltage having a first potential. A substrate cathode, immersible in the solution within the tank, spaced from the anode, receives a second voltage having a second potential, opposite to that of the first potential. A shield is immersible in the solution within the tank between the anode and cathode. The level of shielding provided by the shield is variable and controllable. In one embodiment, the shield includes a conductive element that receives a third voltage having the first potential, the magnitude of the third voltage being controllable. In another embodiment, the shield includes at least one louver, the physical orientation of which is controllably adjustable. The shield is sufficiently spaced from the substrate cathode to be substantially outside an area of sparging and is fixed between the anode and cathode.

Abstract: In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region.

Abstract: This invention provides an apparatus for producing an electrode foil for use in aluminum electrolytic capacitors with which a high capacitance is obtained while the distortion of the foil and the leakage current can be controlled. At least two electrode plates as cathode are disposed in an electrolytic tank containing an electrolytic solution, and a direct current is supplied between an aluminum foil as anode and the electrode plates. Anodization is conducted continuously by turning the direction of the aluminum foil via rollers and conveying the foil between the electrode plates. During this treatment, the length and the position of the effective sections of the electrode plates are adjusted to keep the length to be at most two-thirds of the distance between an area near the surface of the electrolytic solution and the upper part of the bottom roller, so that the peak value of the anodizing current density appears not at the surface of the electrolytic solution but in the electrolytic solution.

Abstract: A method of electroplating an object to be plated attached to a lower portion of a plating bath constituted by draining used plating solution and supplying new plating solution at every plating procedure. The method has a step of supplying additional current so that the object to be plated always has cathode potential, while the object to be plated is being dipped in the plating bath and electroplating is not carried out.

Abstract: A process for sulfurizing treatment of ferrous articles comprises positioning an electrolysis crucible containing a molten-salt bath of potassium thiocyanate and sodium thiocyanate and a pretreatment crucible containing a molten-salt bath of substantially the same composition adjacent to each other, assembling a unitary body by setting a plurality of the articles on a conductive support member in electrical contact therewith and attaching a cathode material to the support member to be out of contact with the articles and electrically insulated from the support member, immersing the unitary body in the bath contained in the pretreatment crucible, maintaining this bath temperature at substantially a prescribe bath temperature during ensuing electrolysis to bring the temperature of the unitary body near the prescribed temperature, transferring the unitary body from the pretreatment crucible to the bath in the electrolysis crucible while maintaining its temperature, and treating the articles by electrolysis.